• 제목/요약/키워드: nitride ceramic materials

검색결과 151건 처리시간 0.028초

Decaborane과 Ammonia로부터 질화붕소(BN) 미분체의 합성 (Preparation of Fine Boron Nitride Powders from Decaborane and Ammonia)

  • 손영국;이윤복;박홍채;오기동
    • 한국세라믹학회지
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    • 제26권2호
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    • pp.179-186
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    • 1989
  • The preparation of the fine BN powders by ammonia-nitridation of ammonia-decaborane derivate was attempted at temperature between 300 to 150$0^{\circ}C$. The formation mechanism of BN was examined and the resulant BN powder was characterized by means of IR, XRD, SEM and PSA method. In the nitridation below 80$0^{\circ}C$ bonding materials were identified with mainly BH and NH but above 80$0^{\circ}C$ with BN by IR spectra and X-ray patterns. Crystalite size, lattice constant and particle size distribution of hexagonal BN prepared at 1, 50$0^{\circ}C$ were La=470$\AA$, Lc=180$\AA$, a=2.5062$\pm$1$\AA$, c=6.8285$\pm$2$\AA$ and 2.0-5.4${\mu}{\textrm}{m}$, respectively.

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배향된 $\beta-Si_3N_4$ Whisker를 함유하는 $Si_3N_4$ 복합체의 기계적 특성에 미치는 소결조제와 소결온도의 영향 (Effect of Sintering Additives and Sintering Temperature on Mechanical Properties of the $Si_3N_4$ Composites Containing Aligned $\beta-Si_3N_4$ Whisker)

  • 김창원;최명제;박찬;박동수
    • 한국세라믹학회지
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    • 제37권1호
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    • pp.21-25
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    • 2000
  • Gas pressure sintered silicon nitride based composites with 5 wt% $\beta$-Si3N4 whiskers were prepared, and the variations depending on sintering additives and sintering temperature were studied. Sintering additives were 6 wt% Y2O3-1 wt% MgO(6Y1M), 6 wt%Y2O3-1 wt% Al2O3(6Y1A), 6 wt% Y2O3-1 wt% SiO2(6Y1S), and whiskers were unidirectionally oriented by a modified tape casting technique. Samples were fully densified by gas pressure sintering at 2148 K and 2273 K. As the sintering temperature increased, the size of large elongated grains was increased. Three point flexural strength of 6Y1M and 6Y1M samples was higher than that of 6Y1S sample, and the strength decreased as the sintering temperature increased. The indentation crack length became shorter for the sample sintered at higher temperature, and the difference between the cracks length parallel to and normal to the direction of whisker alignment was decreased. In case of cracks 45$^{\circ}$off the whisker alignment direction, the crack length anisotropy disappeared.

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Low-Temperature Sintering Behavior of Aluminum Nitride Ceramics with Added Copper Oxide or Copper

  • Hwang, Jin-Geun;Oh, Kyung-Sik;Chung, Tai-Joo;Kim, Tae-Heui;Paek, Yeong-Kyeun
    • 한국세라믹학회지
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    • 제56권1호
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    • pp.104-110
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    • 2019
  • The low-temperature sintering behavior of AlN was investigated through a conventional method. $CaF_2$, CuO and Cu were selected as additives based on their low melting points. When sintered at $1600^{\circ}C$ for 8 h in $N_2$ atmosphere, a sample density > 98% was obtained. The X-ray data indicated that eutectic reactions below $1200^{\circ}C$ were found. Therefore, the current systems have lower liquid formation temperatures than other systems. The liquid phase showed high dihedral angles at triple grain junctions, indicating that the liquid had poor wettability on the grain surfaces. Eventually, the liquid was likely to vaporize due to the unfavorable wetting condition. As a result, a microstructure with clean grain boundaries was obtained, resulting in higher contiguity between grains. From EDS analysis, oxygen impurity seems to be well removed in AlN lattice. Therefore, it is believed that the current systems are beneficial for reducing sintering temperature and improving oxygen removal.

C-axis Orientation and Growth Structure of AIN Thin Films on $SiO_2$/Si Substrates Deposited by Reactive RF Magnetron Sputtering

  • Joo, Han-Yong;Lee, Jae-Bin;Kim, Hyeong-Joon
    • The Korean Journal of Ceramics
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    • 제3권4호
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    • pp.257-262
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    • 1997
  • Aluminum nitride(AIN) thin films were deposited on SiO$_2$/Si substrates by reactive sputtering for the application of SAW devices. The major deposition parameters such as pressure, nitrogen fraction, rf power, substrate distance were changed to find out the optimal condition for c-axis oriented thin films on an amorphous substrate. The effects of deposition parameters on the crystal structure, residual stress, and growth morphology of thin films were characterized by XRD, SEM, and TEM. The FWHM of (002) rocking curve of the films deposited at the proper condition was lower than 2.2$^{\circ}$(C=0.93$^{\circ}$). Cross-sectional TEM showed that self-aligned structure was developed just after slightly random growth at the initial stage. The frequency characteristics of test device fabricated from AIN thin films confirmed their piezoelectric property and applicability for SAW devices.

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Graphite 첨가에 따른 $Ti(C_xN_{1-x})$세라믹스의 물성 (Effect of Graphite Additions on the Properties of $Ti(C_xN_{1-x})$ Ceramics)

  • 고준;최영민;이재도;김종오
    • 한국세라믹학회지
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    • 제34권5호
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    • pp.443-448
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    • 1997
  • Titanium carbonitride (Ti(CxN1-x)) ceramics were prepared by hot pressing of the mixture of TiN and graphite. Hot pressing was performed in a graphite mold at 198$0^{\circ}C$ for 40 min under 44 MPa in N2 atmosphere. The effect of graphite addition on sinterability and the mechanical properties of titanium carbonitride were investigated. In this study, the solubility limit of graphite in Ti(CxN1-x) was slightly below 10 wt% based on the results of XRD analysis. Within the solubility limit, graphite dissolved completely into titanium nitride and formed the single phase Ti(CxN1-x) solid solution. Peak relative density of 99% and hardness of 16 GPa were observed for Ti(CxN1-x) ceramics with 7 wt% graphite while maximum flexural strength of 500 MPa and fracture toughness of 4.0 MPa.m1/2 were observed for Ti(CxN1-x) ceramics with 10 wt% graphite. The electrical resistivities of the ceramics with 7 wt% and 10 wt% graphite were observed 40 {{{{ mu OMEGA }}cm and 50 {{{{ mu OMEGA }}cm respectively.

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질화규소에 의한 SiC 소결체의 제조에 관한 연구 (Febrication of $Si_3-N_4$ Bonded SiC Ceramics)

  • 정주희;김종희
    • 한국세라믹학회지
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    • 제20권1호
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    • pp.63-69
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    • 1983
  • It is know that $Si_3-N_4$ bonded SiC has almost all the valuable properties needed for the high temperature material and thus has bery wide range of applicability. Si powder and two different sized SiC powder were used as the raw mateials. Specimens were prepared by heating the green compact mode of the raw materials with polyvinyl alcohol binder in the nitrogen atmosphere. The bond-ing of SiC particles is brought about with the formation of reaction bonded silicon nitride phase between the particles he influences of the variation of the relative amounts of the raw materials and the amount of the organic binder on the density and the bend strength of the specimens were investigated. It was shown that the calculation of the amount of the nitridation of Si is somewhat complicated matter since some portion of the organic binder reacts with the Si during the firing process. Fixing the Si amount to 20w/o the distributions of the size of the SiC particles that gives the maximum density and the maximum strnegth were obtained through experiments. It was observed that the two distributions were not equal to each other. As the amount of Si increased the amount of Si reacted with nitrogen and the strength increased. The fracture mode was intergranular for the most part and the transgranular fracture was scarcely observed.

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Nitrided Pressureless Sintering에 의해 제조된 Si3N4의 산화거동 (Oxidation Behavior of Si3N4 by the Nitrided Pressureless Sintering)

  • 한인성;천승호;정용희;서두원;이시우;홍기석;우상국
    • 한국세라믹학회지
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    • 제42권1호
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    • pp.62-68
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    • 2005
  • 질화상압동시소결(NPS) 공정에 의해 제조된 기공율이 다른 질화규소 소결체에 대해 $1300^{circ}C$ 순산소 가스분위기에서 산화거동을 조사하였다. 질화규소 세라믹스 표면에 형성된 산화층의 두께는 산화 시간과 온도에 따라 증가되었으며, $1300^{circ}C$에서 100시간 산화시킨 5A5Y5Si와 5A5Y10Si 시편의 산화층 두께는 각각 10$\mu$m와 20$\mu$m이었다. 5A5YSi와 5A5Y10Si 시편의 산화는 각각 215kJ/mol과 104kJ/mol의 활성화 에너지를 갖고 포물선적 거동을 나타내었다. $1300^{circ}C$에서 500시간 산화시킨 후, 5A5Y5Si 시편에 대해 꺾임 강도를 측정한 결과, 초기의 약 500MPa값을 유지하고 있었으며, 반면 5A5Y10Si의 경우에는 초기의 값에서 약 100MPa의 강도저하를 나타내고 있었다.

Mechanical Behavior and Numerical Estimation of Fracture Resistance of a SCS6 Fiber Reinforced Reaction Bonded Si$_3$N$_4$ Continuous Fiber Ceramic Composite

  • Kwon, Oh-Heon;Michael G. Jenkins
    • Journal of Mechanical Science and Technology
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    • 제16권9호
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    • pp.1093-1101
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    • 2002
  • Continuous fiber ceramic composites (CFCCs) have advantages over monolithic ceramics : Silicon Nitride composites are not well used for application because of their low fracture toughness and fracture strength, but CFCCs exhibit increased toughness for damage tolerance, and relatively high stiffness in spite of low specific weight. Thus it is important to characterize the fracture resistance and properties of new CFCCs materials. Tensile and flexural tests were carried out for mechanical properties and the fracture resistance behavior of a SCS6 fiber reinforced Si$_3$N$_4$ matrix CFCC was evaluated. The results indicated that CFCC composite exhibit a rising R curve behavior in flexural test. The fracture toughness was about 4.8 MPa$.$m$\^$1/2 , which resulted in a higher value of the fracture toughness because of fiber bridging. Mechanical properties as like the elastic modulus, proportional limit and the ultimate strength in a flexural test are greater than those in a tensile test. Also a numerical modeling of failure process was accomplished for a flexural test. This numerical results provided a good simulation of the cumulative fracture process of the fiber and matrix in CFCCs.

전기방사에 의한 섬유상 질화알루미늄 합성 및 특성 평가 (Synthesis and Characterization of Fiberous AlN by Electrospinning)

  • 전승엽;황진아;주제욱;전명표
    • 한국전기전자재료학회논문지
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    • 제30권7호
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    • pp.441-446
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    • 2017
  • Aluminum nitride fibers were synthesized by carbothermal reduction and nitridation of precursor fibers obtained by electrospinning. The starting materials used to synthesize the AlN fibers were $Al(NO_3)_3{\cdot}9H_2O$ and urea. Polyvinylpyrrolidone with increasing viscidity was used as the carbon source to obtain a composite solution. The mixed solution was drawn into a plastic syringe with a stainless steel needle, which was used as the spinneret and connected to a 20 kV power supply. A high voltage was supplied to the solution to facilitate the formation of a dense net of fibers on the collector. The precursor fibers were dried at $100^{\circ}C$ and then heated to $1,400^{\circ}C$ for 1 h in a microwave furnace under $N_2$ gas flow for the carbothermal reduction and nitridation. X-ray diffraction studies indicated that the synthesized fibers consisted of the AlN phase. Field emission scanning electron microscopy studies indicated that the diameter of the calcined fibers was approximately 100 nm.

Production of Fine ZnO Powders by Carbothermal Reduction

  • Choi, Heon-Jin;Lee, June-Gunn;Jung, Kwang-Taik;Kim, Ki-Hwan
    • The Korean Journal of Ceramics
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    • 제4권4호
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    • pp.304-310
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    • 1998
  • Carbothermal reduction has been one of the important processes for the production of ceramic raw materials such as silicon carbide, silicon nitride, boron carbide, etc. The process has also been one of several trials for the recovery of ZnO from ZnO-containing waste. It usually involves two consecutive steps: the evolution of Zn vapor and its oxidation with air. In this study a ZnO-containing raw material is reduced by carbon at $1250^{\circ}C$ and the evolved Zn vapor is oxidized with air, resulting in fine powders of ZnO. computer programs, THERMO and PYROSIM developed by MINTEK, are used to simulate the process thermodynamically and the results are compared with the experimental results. It is shown that the ZnO-containing raw material can be reduced and can form fine ZnO with the yield as high as 98.7% under a proper condition. Based on these results, a process is engineered for the production of ZnO in a rotary kiln at a rate of 3 tons/day. The produced ZnO powders show properties suitable to the usual applications in ceramic industries with a purity of > 95wt% and an average particle size of ∼3${\mu}m$.

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