• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.9
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• pp.438-443
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• 2001

In the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process, the key issues are the optimized thickness control, within-wafer-non-uniformity, and the possible defects such as pad oxide damage and nitride residue. The defect like nitride residue and silicon (or pad oxide) damage after STI-CMP process were discussed to accomplish its optimum process condition. To understand its optimum process condition, overall STI related processes including reverse moat etch, trench etch, STI fill and STI-CMP were discussed. Consequently, we could conclude that law trench depth and high CMP thickness can cause nitride residue, and high trench depth and over-polishing can cause silicon damage.

• Journal of the Korean Ceramic Society
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• v.33 no.3
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• pp.277-284
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• 1996

The water test results indicated that the impurities had detrimetal effect on the wear resistance of silicon nitride and the effects were getting severe as the temperature increased. Especially when Ca existed as an impurity the detrimental effects was the most severe. These results were resulted from the fact that impurities lowered the mechanical properties of the grain boundary phase of silicon nitride. The wear test results of glass/glass-ceramic specimens having a similar composition to the grain boundary phase of silicon nitride revea-led that the specimen containing CaO showed the lowest wear resistance. The existence of Fe and Ca at the grain boundary phase assisted forming a grain boundary phase with relatively low refractoriness. Therefore at a given wear condition the removal of deformed layer would be easier. The results showed that the glass phases could be modified by heat-treatment and this modification improved tribological characteristics of the silicon nitride.

• Journal of the Korean Ceramic Society
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• v.27 no.7
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• pp.869-876
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• 1990

Hexagonal boron nitride was synthesized from boron oxide and sodium amide in ammonia gas stream. The reaction mechanisms and characteristics of as synthesized boron nitride was investigated by means of TG, DTA, IR, XRD, SEM and PSA. The results are ; 1) hexagonal boron nitride was synthesized from reactions at temperatures above 40$0^{\circ}C$ 2) Sodium metaborate was present as by-product after reaction so that the reaction mechanism is reduced as follows : 2B2O3＋3NaNH2longrightarrowBN＋3NaBO2＋2NH3. 3) boron nitride obtained at the reaction temperature below 40$0^{\circ}C$ is found to have random layer strudcture but the structure transits to ordered layer structure rapidly with increasing reaction temperature, showing separation of (101) differaction line from (10)band in XRD pattern of the reaction product at 50$0^{\circ}C$.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.8
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• pp.56-62
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• 1992

This paper is analyzed the charge trapping and electrical properties of 0(Oxide), NO(Nitrided oxide) and ONO(Reoxidized nitrided oxide) as dielectric films in MIS structures. We have processed bottom oxide and top oxide by the thermal method, and nitride(Si$_{3}N_{4}$) by the LPCVD(Low Pressure Chemical Vapor Deposition) method on P-type(100) Silicon wafer. We have studied the charge trapping properties of the dielectrics by using a computer controlled DLTS system. All of the dielectric films are shown peak nearly at 300K. Those are bulk traps. Many trap densities which is detected in NO films, but traps. Many trap densities which is detected in NO films. Varing the nitride thickness, the trap densities of thinner nitride is decreased than the thicker nitride. Finally we have found that trap densities of ONO films is affected by nitride thickness.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.970-973
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• 1999

When the size of the device is decreased, the hot carrier degradation presents a severe problem for long-term device reliability. In this paper we fabricated & tested the 0.26${\mu}{\textrm}{m}$ NMOSFET with wet gate oxide and nitride oxide gate to compare that the characteristics of hot carrier effect, charge to breakdown, transistor Id_Vg curve and charge trapping using the Hp4145 device tester As a result we find that the characteristics of nitride oxide gate device better than wet gate oxide device, especially a hot carrier lifetime(nitride oxide gate device satisfied 30years, but the lifetime of wet gate oxide was only 0.1year), variation of Vg, charge to breakdown and charge trapping etc.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.715-720
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• 2002

Silicon nitride samples with aligned whisker seeds were prepared with different amounts of yttria and alumina as the sintering additives. Their sintering behaviors and the microstructural developments between 2123K and 2323K were examined. The sample with larger amount of the sintering additives showed faster densification and grain growth. Even though addition of the aligned whisker seeds slightly retarded densification of silicon nitride, it improved the flexural strength and the fracture toughness. Both the flexural strength and the fracture toughness of silicon nitride with the aligned whisker seeds were increased as the amount of the sintering additives was increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.5
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• pp.436-442
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• 2007

Physical properties and impedance-humidity characteristics of carbon nitride films were investigated for micro-humidity-sensors. Carbon nitride films were deposited in low temperature and low power for application of semiconductor fabrication process, and empirical equation was proposed for thickness evaluation. Deposited films had an uniform and compact surface comparing with previously reported results, which was expected a good candidate for humidity sensing materials. Carbon nitride humidity sensors based on Si substrate revealed good humidity-impedance characteristics with a wide range of relative humidity and showed low hysteresis.

• Tribology and Lubricants
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• v.11 no.5
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• pp.78-86
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• 1995

The silicon nitride based ceramic cutting tool materials have been fabricated by gas pressure sintering (GPS) or hot pressing (HP). Their mechanical properties were measured and the effect of the fabrication variables on the properties were examined. Also, effect of adding TiN or TiC particulates on the mechanical properties of the silicon nitride ceramics were investigated. Ceramic cutting tools (ISO 120408) were made of the sintered bodies. Cutting performance test were performed on either conventional or NC lathe. The workpieces were grey cast iron, hardened alloy steel (AISI 4140, HRc>60) and Ni-based superalloy (Inconel 718). The results showed that fabrication variables, namely, sintering temperature and time, exerted a strong influence on the microstincture and mechanical properties of the sintered body, which, however, did not make much difference in wear resistance of the tools. High hardness of the tool containing TiC particulates exhibited good cutting performance. Extensive crater wear was observed on both monolithic and TiN-containing silicon nitride tools after cutting the hardened alloy steel. Inconel 718 was extremely difficult to cut by the current cutting tools.

• The Korean Journal of Ceramics
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• v.4 no.4
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• pp.331-335
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• 1998

R-curve, of three kinds of silicon nitride-based ceramics were measured, using single edge notched beam (SENB) method at room and at elevated temperatures, up to $1200^{\circ}C$. Stable fraacture was seen on ceramic materials with SENB specimens if the machined notch is deep enough, even though the crack resistance did not increase with crack length. Hot pressed silicon nitride did not show the rising R-curve behavior at room temperature, but it showed some rising at $1000^{\circ}C$ and above. Si3N4 reinforced with SiC whiskers showed no rising behavior at room and elevated temperatures, as it has smaller grain size, compare to the monolithic specimen. Gas pressure sintered silicon nitride had very large and elongated grains, and it showed rising R-curve even at room temperature. However, it showed some creep behavior at $1200^{\circ}C$ and the calculated R-curve on this condition did not show a good result. We cannot apply this technique on this condition for obtaining the R-curve.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.2
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• pp.147-152
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• 2002

Carbon nitride thin films were deposited by reactive sputtering for the hard coating materials on Si wafer and tool steels. When the nitrogen content of carbon nitride film on tool steel is 33.4%, the mean hardness and elastic modulus are 49.34 GPa and 307.2 GPa respectively. The nitrided or carburised surface acts as the diffusion barrier which shows better adhesion of carbon nitride thin film on the steel surface. To prevent nitrogen diffusion from the film, steel substrate can be saturated by nitrogen forming a Fe$_3$N layer. The desirable structure at the surface after carburising is martensite, but sometimes, due to high carbon content an proeutectoid Fe$_3$C structure may form at the grain boundaries, leaving the overall surface brittle and may cause defects.