• Korean Journal of Materials Research
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• v.12 no.1
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• pp.75-81
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• 2002

The ferroelectric properties of Pb(Zr,Ti)O$_3$[PZT] films degrade when the films with Pt top electrodes are annealed in hydrogen containing environment. This is due to the reduction activity of atomic hydrogen that is generated by the catalytic activity of the Pt top electrode. At the initial stage of hydrogen annealing, oxygen vacancies are formed by the reduction activity of hydrogen mainly at the vicinity of top Pt/PZT interface, resulting in a shift of P-E (polarization-electric field) hysteresis curve toward the negative electric field direction. As the hydrogen annealing time increases, oxygen vacancies are formed inside the PZT film by the inward diffusion of hydrogen ions, as a result, the polarization degrades significantly and the degree of P-E curve shift decreases gradually. The direction and the magnitude of the remnant polarization in the PZT film affect the motion of hydrogen ions which determines the degradation of polarization characteristics and the shift in the P-E hysteresis curve of the PZT capacitor during hydrogen annealing. When the remnant polarization is formed in the PZT film by applying a pre-poling voltage prior to hydrogen annealing, the direction of the P-E curve shift induced by hydrogen annealing is opposite to the polarity of the pre-poling voltage. The hydrogen-induced degradation behavior of the PZT capacitor is also affected by the internal field that has been generated in the PZT film by the charges located at the top interface prior to hydrogen annealing.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.526-532
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• 2015

We quantitatively investigated instability mechanisms under simultaneous positive gate and drain bias stress (SPGDBS) in self-aligned top-gate amorphous indium-zinc-oxide thin-film transistors. After SPGDBS ($V_{GS}=13V$and $V_{DS}=13V$), the parallel shift of the transfer curve into a negative $V_{GS}$ direction and the increase of on current were observed. In order to quantitatively analyze mechanisms of the SPGDBS-induced negative shift of threshold voltage (${\Delta}V_T$), we experimentally extracted the density-of-state, and then analyzed by comparing and combining measurement data and TCAD simulation. As results, 19% and 81% of ${\Delta}V_T$ were taken to the donor-state creation and the hole trapping, respectively. This donor-state seems to be doubly ionized oxygen vacancy ($V{_O}^{2+}$). In addition, it was also confirmed that the wider channel width corresponds with more negative ${\Delta}V_T$. It means that both the donor-state creation and hole trapping can be enhanced due to the increase in self-heating as the width becomes wider. Lastly, all analyzed results were verified by reproducing transfer curves through TCAD simulation.

• Safety and Health at Work
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• v.11 no.3
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• pp.361-366
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• 2020

Background: This study aimed to identify the validity of breast cancer symptom questionnaire of worker's special health examination and its relationship with breast ultrasonography findings in young female night workers. Methods: The breast cancer symptom questionnaire data of worker's special health examination and breast ultrasonography results in young female shift workers who worked in one electronic manufacture company were collected from 2014 to 2018. Results: Of the 857 workers, 18 had a Breast Imaging Reporting and Database System category 4 or higher. Among other variables, shift work tenure alone was associated with the risk of having a Breast Imaging Reporting and Database System category higher than 4. The sensitivity, specificity, positive predictive value, and negative predictive value of the symptom questionnaire were 16.7%, 87.7%, 2.8%, and 98.0%, respectively. Conclusion: The current breast cancer symptom questionnaire of the worker's special health examination is inappropriate due to its low sensitivity and positive predictive value. In the future, female night workers will need alternative measures for more accurate screening for breast cancer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.100-103
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• 2005

Homogeneously aligned nematic liquid crystal modes are representatively the -FFS (fringe-field switching) mode using liquid crystal (-LC) with negative dielectric anisotropy, the +FFS mode and the IPS (in-plane switching) mode using +LC with positive dielectric anisotropy. In view of image quality evaluation standard of LCD, we compared characteristics of the brightness, the contrast ratio (CR) and color shift when the modes have respectively optimized phase retardation values $(d{\Delta}n)$. Consequently, in the most sensitively viewing angle of a man's physical vision, both FFS modes have advantage over the IPS mode from the brightness & the CR point of view. We are also confirmed that the +FFS mode out of them shows the smallest color shift according to all viewing directions in grey levels.

• Journal of The Korean Astronomical Society
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• v.37 no.5
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• pp.471-476
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• 2004

We propose an analytical model to estimate the influence of a merger on the thermal SZ effect. Following observations we distinguish between subsonic and transonic mergers. Using analytical velocity fields and the Bernoulli equation we calculate the excess pressure around a moving subcluster for an incompressible subsonic gas. Positive excess around the stagnation point and negative excess on the side of the subcluster lead to characteristic signatures in the SZ map, of the order of $10\%$ compared to the unperturbed signal. For a transonic merger we calculate the change in the thermal spectral SZ function, resulting from bow shock accelerated electrons. The merger shock compression factor determines the power law tail of the new non-thermal electron population and is directly related to a shift in the crossover frequency. This shift is typically a few percent towards higher frequencies.

• Transactions on Electrical and Electronic Materials
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• v.6 no.5
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• pp.214-220
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• 2005

The ferroelectric properties of the $Pt/PZT(Pb(Zr,Ti)O_3)/Pt$ capacitors are severely degraded when they are annealed in hydrogen-containing environment. Hydrogen atoms created by the catalytic reaction of Pt top electrode during annealing in hydrogen ambient penetrate into PZT films and generate oxygen vacancies by the reduction of the PZT films, which is likely to cause the degradation. The degree of hydrogen-induced degradation and the direction of voltage shift in P-E curves of the pre-poled PZT capacitors after annealing in hydrogen ambient is dependent on the polarity of the pre-poling voltage. This implies that oxygen vacancies causing hydrogen induced degradation are generated by hydrogen ions having a polarity. The degraded ferroelectricity of the PZT capacitors can be effectively recovered by the shift of oxygen vacancies toward the Pt top electrode interface during post-annealing in oxygen environment with applying negative unipolar stressing.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.445-448
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• 2006

Bias stress effect in pentacene organic thin-flim transistors with cross-linked PVA gate dielectric is analyzed. For negative gate bias stress, positive threshold voltage shift is observed. The injected charges from the gate electrode to the defect states of gate dielectric are regarded as the main origin of $V_T$ shift. The reduced bias stress effect using $SiO_2$ blocking layer confirms the assumed mechanism. It is also demonstrated that the inverter with $SiO_2$ blocking layer shows the negligible hysteresis owing to the reduced bias stress effect.

• Journal of Applied Biological Chemistry
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• v.49 no.3
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• pp.90-94
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• 2006

Bactericidal activity of grapefruit seed extract (GSE)-based disinfectant, as a safe disinfectant, was measured against five bacteria by Korean Food & Drug Administration (KFDA) dilution-neutralization method. GSE-based disinfectant showed a 99.9999% bactericidal activity against Escherichia coli ATCC 10536, Salmonella typhi ATCC 29629, Staphylococcus aureus ATCC 6538, Bacillus cereus ATCC 11778, and Listeria monocytogenes ATCC 1911 at the concentration of 2.15% GSE. It showed better bactericidal activity against Gram-negative bacteria of E. coli ATCC 10536 and S. typhi ATCC 29629 at lower concentration of GSE (0.43%). Based on the results, it was suggested that a possible bactericidal mechanism of GSE active ingredients was due to the abrupt osmotic shift during the bactericidal activity test by KFDA method.

• Bulletin of the Korean Chemical Society
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• v.34 no.11
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• pp.3265-3268
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• 2013

The multi-hydrogen bonded systems with the solvated electrons are investigated at the B3LYP/6-311++$G^{**}$ basis set level. The symmetrical linear geometrical characteristic is common for the dimer systems, while for the tetramer system, the tetrahedron configuration is generated. The NBO charge analyses demonstrate that the multi-hydrogen-multi-electron (mH-ne) coupling exist in these anion systems, as is supported by the electrostatic potential and the molecular orbital analyses. The positive chemical shift value of the central hydrogen ($H_c$) and the negative chemical shift value of the terminal hydrogen ($H_t$) indicate that the $H_c$ is electronegative while the $H_t$ is electropositive, respectively. Strong coupling between two central hydrogen atoms is demonstrated by the large spin-spin coupling constants. The solvated electron donates significant contributions for the stability of these systems.

• Journal of Surface Science and Engineering
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• v.29 no.5
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• pp.519-524
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• 1996

We synthesized semiconducting Sn-doped diamondlike carbon films by rf plasma-enhanced chemical vapor deposition using an organotin compound as a dopung gas source. XPS quan-titative analysis for the deposited films after 60 s argon ion etching revealed that Sn concen-tration increased with the partial pressure of the organotin compound in the reactant gas. In C 1s spectra, there was a component due to C-Su bond which had a negative chemical shift. C 1s spectra also indicated that the deposited films were relatively $sp^2$ rich. The chemical shift of the Sn-C bond in Sn $3d_{5/2}$ spectra was about +1.7 eV. The electrical resistivity and the optical transmittance were also investigated.