• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.9
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• pp.644-650
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• 2003

In this paper, we have studied characteristics of PHEMT's fabricated by two difference types of gate recess for improving performance of the device in millimeter wave applications. PHEMT's were fabricated using wide and narrow recesses. Maximum transconductance(g$_{m}$) of PHEMT's using the wide recess was 332.7 mS/mm, and that of PHEMT's using narrow recess was 504.6 mS/mm. From small signal performance measurements, cutoff frequency(f$_{T}$) and maximum stable oscillation frequency(f$_{max}$) of PHEMT's using wide recess were 113 GHz and 172 GHz, respectively. f$_{T}$ and f$_{max}$ of PHEMT using narrow recess were 101 GHz and 142 GHz, respectively. The measured data of the fabricated PHEMTs' were carefully studied and analyzed.d.tudied and analyzed.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2011.04a
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• pp.57-60
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• 2011

The spray characteristics according to the recess length of the GCSC injector and the change of momentum flux ratio(MFR) of the gas and the liquid have been examined through high pressure cold flow test using a high pressure chamber. The liquid in this experiment was water, and the gas was nitrogen. The spray images were taken by a back-lit strobe imaging technique. Results showed that the spray was a wide hollow cone at the lower MFR(liquid velocity was fixed) and the spray became a narrow solid cone as the MFR was increased. And the injector with short recess length produced a narrow solid cone at the higher MFR.

• Electrical & Electronic Materials
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• v.7 no.5
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• pp.376-382
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• 1994

In this study we developed a program(DEVSIM) to simulate the two dimensional distribution of the electrostatic potential and the electric field of the arbitrary structure consisting of GaAs/AlGaAs semiconductor and metal as well as dielectric. By the comparision of the electric field distribution of GaAs MESFETs with the various recess gates we proposed a suitable device structure to improve the breakdown characteristics of MESFET. According to the results of simulation the breakdown characteristics were improved as the thickness of the active epitaxial layer was decreased. And the planar structure, which had the highly doped layer under the drain for the ohmic contact, was the worst because the highly doped layer prevented the space charge layer below the gate from extending to the drain, which produced the narrow spaced distribution of the electrostatic potential contours resulting in the high electric field near the drain end. Instead of the planar structure with the highly doped drain the recess gate structure having the highly doped epitaxial drain layer show the better breakdown characteristics by allowing the extention of the space charge layer to the drain. Especially, the structure in which the part of the drain epitaxial layer near the gate show the more improvement of the breakdown characteristics.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.249-252
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• 2002

we have studied the characteristics of PHEMT's with gate recess etching method. The DC characterization of PHTMT fabricated with the wide single recess methods is a maximum drain current density of 319.4 ㎃/mm and a peak transconductance of 336.7 ㎳/mm. The RF measurements were obtained in the frequency range of 1~50GHz. At 50GHz, 3.69dB of 521 gain were obtained and a current gain cut-off frequency(f$_{T}$) of 113 CH and a maximum frequency of oscillation(f$_{max}$) of 172 Ghz were achieved from this device. On the other hand, a maximum drain current of 367 mA/mm, a peak transconduclancc of 504.6 mS/mm, S$_{21}$ gain of 2.94 dB, a current gain cut-off frequency(f$_{T}$) of 101 CH and a maximum frequency of oscillation(f$_{max}$) of 113 fa were achieved from the PHEMT's fabricated by the .narrow single recess methods.methods.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.23 no.7 s.166
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• pp.1231-1237
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• 1999

Applying the conjugate contact condition, contact lines of a cylindrical worm gear has been calculated. The characteristics of tooth contact were analyzed and the pitting resistance were also assessed. It has been verified that: i) the length of contact is shortest on the 1st tooth of the front region, ii) the contact region is more narrow in the recess side than in the access side, iii) the contact region is more narrow in worm than in worm wheel. Hence, the pitting resistance is weakest in the recess side of the 1st contacting worm tooth.

• ETRI Journal
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• v.27 no.3
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• pp.304-311
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• 2005

We report on the fabrication of an AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) using a dielectric-defined process. This process was utilized to fabricate $0.12\;{\mu}m\;{\times}\;100 {\mu}m$ T-gate PHEMTs. A two-step etch process was performed to define the gate footprint in the $SiN_x$. The $SiN_x$ was etched either by dry etching alone or using a combination of wet and dry etching. The gate recessing was done in three steps: a wet etching for removal of the damaged surface layer, a dry etching for the narrow recess, and wet etching. A structure for the top of the T-gate consisting of a wide head part and a narrow lower layer part has been employed, taking advantage of the large cross-sectional area of the gate and its mechanically stable structure. From s-parameter data of up to 50 GHz, an extrapolated cut-off frequency of as high as 104 GHz was obtained. When comparing sample C (combination of wet and dry etching for the $SiN_x$) with sample A (dry etching for the $SiN_x$), we observed an 62.5% increase of the cut-off frequency. This is believed to be due to considerable decreases of the gate-source and gate-drain capacitances. This improvement in RF performance can be understood in terms of the decrease in parasitic capacitances, which is due to the use of the dielectric and the gate recess etching method.

• Proceedings of the KOR-BRONCHOESO Conference
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• 1982.05a
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• pp.17.2-19
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• 1982

The sinus tympani is subject to great variability in the size, shape and posterior extent. A heavy compact bony zone, especially in the posterior portion and the narrow space between the facial nerve and posterior semicircular canal are the limitation of surgical approach. The facial recess should be opened, creating a wide connection between the mesotympanum and mastoid in the Intact canal wall tympanoplasty with mastoidectomy. The surgically created limits of the facial recess are the facial nerve medially, the chorda tympani laterally and the bone adjacent to the incus superiorly. Using adult Korean's thirty-five temporal bones, the authors measured the osteologic reslationship in the posterior tympanum, especially sinus tympani and facial recess. The result was as followed. 1. The average distance from the anterior end of the pyramidal eminence. 1) to the edge of the sinus tympani directly posterior was 2.54(1.05-5.40)mm. 2) to the maximum posterior extent was 3.22(1.25-7.45)mm. 3) to the maximum cephaled extent was 0.67 (0.40-1.75)mm. 2. The boundary of the sinus tympani was 82.9% from the lower margin oval window to the upper margin round window niche. 3. The deepest part of the sinus tympani was 62.9% in the mid portion, between the ponticulus and subiculum. 4. The oblique dimension from the fossa incudis above to the hypotympanum below was 8.13(7.90-9.55)mm. 5. The transverse dimensions midway between the oval window above and round window below was 3.00(2.85-3.45)mm. 6. The transverse dimension at the level of the fossa incudis was 1.81(1.40-2.15)mm. 7. The facial nerve dehiscence was 14.3%. 8. Anterior-posterior diameter of the footplate was 2.98(2.85-3.05) mm. 9. The average distance from the footplate. 1) to the cochleariform process was 1.42(1.35-1.55) mm. 2) to the round window niche was 1.85(1.45-2.10) mm.