Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2002.06b
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- Pages.249-252
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- 2002
Analysis of characteristics of PHEMT's with gate recess etching method
게이트 리세스 식각 방법에 따른 PHEMT 특성 변화
Abstract
we have studied the characteristics of PHEMT's with gate recess etching method. The DC characterization of PHTMT fabricated with the wide single recess methods is a maximum drain current density of 319.4 ㎃/mm and a peak transconductance of 336.7 ㎳/mm. The RF measurements were obtained in the frequency range of 1~50GHz. At 50GHz, 3.69dB of 521 gain were obtained and a current gain cut-off frequency(f
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