• Title/Summary/Keyword: narrow gap

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Pool boiling heat transfer enhancement by perforated plates (천공판의 풀비등 열전달 촉진에 대한 연구)

  • Kim, Nae-Hyeon
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.20 no.4
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    • pp.1406-1415
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    • 1996
  • Several recent studies have revealed that boiling heat transfer may be considerably enhanced in a narrow restricted region. In his study, the narrow restricted region was formed by attaching a perforated plate on top of a boiling surface. Through systematic experiments, effects of the hole size, hole pattern, gap width between the perforated plate and the boiling surface were investigated using water or R-113. Results show that perforated plates considerably enhance the boiling of water or R-113. For water, especially, they have outperformed commercial enhanced tubes, which confirms that boiling enhancement mechanism of the perforated plate (thin film evaporation beneath the elongated bubble) is very effective to the boiling of high surface tension liquids such as water. Optimum configuration was found - 3.0 mm hole diameter, 15 mm * 15 mm hole pattern, 0.3 ~ 0.5 mm gap width for water, and 2.0 mm hole diameter, 3.5 mm * 3.5 mm hole pattern, O.5 mm gap width for R-113. A correlation which correlates most of the data within .+-. 30% was also developed.

Study of Via-Typed Air-Gap for Logic Devices Applications below 45 nm Node

  • Kim, Sang-Yong;Kim, Il-Soo;Jeong, Woo-Yang
    • Transactions on Electrical and Electronic Materials
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    • v.12 no.4
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    • pp.131-134
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    • 2011
  • Back-end-of-line using ultra low-k (ULK; k < 2.5) has been required to reduce resistive capacitance beyond 45 nmtechnologies, because micro-processing units need higher speed and density. There are two strategies to manufacture ULK inter-layer dielectric (ILD) materials using an air-gap (k = 1). The former ULK and calcinations of ILD degrade the mechanical strength and induce a high cost due to the complication of following process, such as chemical mechanical polishing and deposition of the barrier metal. In contrast, the air-gap based low-k ILD with a relatively higher density has been researched on the trench-type with activity, but it has limited application to high density devices due to its high air-gap into the next metal layer. The height of air-gap into the next metal layer was reduced by changing to the via-typed air-gap, up to about 50% compared to that of the trench-typed air-gap. The controllable ULK was easily fabricated using the via-typed air-gap. It is thought that the via-type air-gap made the better design margin like via-patterning in the area with the dense and narrow lines.

Prediction of Weld Residual Stress of Narrow Gap Welds (협개선 용접부에 대한 용접잔류응력 예측)

  • Yang, Jun-Seog;Heo, Nam-Su
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.34 no.1
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    • pp.79-83
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    • 2010
  • The conventional welding technique such as shield metal arc welding has been mostly applied to the piping system of the nuclear power plants. It is well known that this welding technique causes the overheating and welding defects due to the large groove angle of weld. On the other hand, the narrow gap welding(NGW) technique has many merits, for instance, the reduction of welding time, the shrinkage of weld and the small deformation of the weld due to the small groove angle and welding bead width comparing with the conventional welds. These characteristics of NGW affect the deformation behavior and the distribution of welding residual stress of NGW, thus it is believed that the residual stress results obtained from conventional welding procedure may not be applied to structural integrity evaluation of NGW. In this paper, the welding residual stress of NGW was predicted using the nonlinear finite element analysis to simulate the thermal and mechanical effects of the NGW. The present results can be used as the important information to perform the flaw evaluation and to improve the weld procedure of NGW.

A Novel Sub-Micron Gap Fabrication Technology using Chemical-Mechanical Polishing (CMP) for Lateral Field Emission Device (FED) (측면 전계 방출 소자를 위한 화학적-기계적 연마를 이용한 새로운 미소 간격 제작 기술)

  • Lee, Chun-Seop;Han, Cheol-Hui
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.50 no.9
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    • pp.466-470
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    • 2001
  • We have developed a sub-micron gap fabrication technology using chemical-mechanical polishing (CMP) without /the sub-micron lithography equipments (0.18∼0.25 7m). And it has been applied to a lateral field emission device (FED), in which narrow gap distance is very important for reducing turn-on voltage. As a result, the turn-on voltage (at which the current level is 1 nA) of the fabricated device with the gap distance of 256 nm is as low as 4.0 V, which is the lowest turn-on voltage among lateral FEDs ever reported.

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Numerical Investigation on Turbulent Flow Characteristics in the Gap connecting with Two parallel Channels using Large Eddy Simulation (평행한 두 사각유로를 연결하는 협소유로내의 난류유동 특성에 관한 대형 와 수치 모사)

  • Hong, Seong-Ho;Seo, Jeong-Sik;Shin, Jong-Keun;Choi, Young-Don
    • Proceedings of the SAREK Conference
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    • 2008.11a
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    • pp.55-60
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    • 2008
  • Turbulent flow characteristics on the gap of two parallel channels are investigated using LES(large eddy simulation) approach. Two parallel channels have the same cross-section area and are connected by the narrow channel named the gap. Turbulent flow near the gap makes the flow pulsation along the streamwise direction of two channels. The flow condition is the Reynolds number of $2.5{\times}10^{-5}$. We compared the predicted results with the previous experimental results and presented the axial mean velocity, turbulent intensities, Reynolds shear stresses and turbulent kinetic energy.

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스핀트로닉스 소재로 사용될 수 있는 HgCdTe의 물리적 성질 : Rashbar effect 와 Zeeman spin splitting

  • 홍진기;이진서;이긍원;안세영;이제형;김진상;이병찬
    • Proceedings of the Korean Magnestics Society Conference
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    • 2002.12a
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    • pp.32-33
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    • 2002
  • 최근 세계적 주목을 받고 있는 spin FET[1] 소자의 구현은 강자성 물질에 의하여 반도체에 주입된 spin 편향된 전자가 반도체 계면에 유도된 전기장의 영향을 받아 spin-orbit interaction을 하는 mechanism(Rashbar effect)이 근간을 이루고 있다. 작은 band gap을 가지는 반도체(narrow gap 반도체)는 작은 유효질량의 전자에 의해서 이러한 Rashbar effect[2]를 크게 할 수 있는 물질로서, spin FET 구현을 위한 강력한 후보이며, 요즘 한창 연구되고 있는 주제이기도 하다[3]. (중략)

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Counter-Current Flow Limit in Narrow Gap (간극에서의 역방향 유동 제한 현상 연구)

  • Kim, Yong-Hoon;Suh, Kune-Y.
    • Proceedings of the KIEE Conference
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    • 1998.11c
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    • pp.1054-1060
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    • 1998
  • Previous counter-current flow limitation (CCFL) and critical heat flux (CHF) studies included investigations on the inlet entrance, inclined channel and gap effects for the most part. In this study, the local CHF correlation was presented to be used in the numerical analysis for the 3 dimensional hemispherical geometry. Also, first-principle analyses were performed to determine the maximum heat removal capability from the debris through the gap that may be formed during a core melt accident. The maximum heat removal capability by gap cooling can be applied in quantitatively assessing the severe accident management measures.

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