• 한국세라믹학회지
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• 제50권1호
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• pp.1-17
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• 2013

Since their first discovery, carbon nanotubes (CNTs) have become a material central to the field of nanotechnology. Owing to their splendid physical, structural and chemical properties, they have the potential to impact a wide range of applications, including advanced ceramics, nanoelectronic devices, nanoscale sensors, solar cells, battery electrodes, and field emitters. This review summarizes the synthetic methods of preparing CNTs and focuses on the chemical vapor deposition (CVD) method, especially catalytic CVD. In order to stabilize and disperse the catalyst nanoparticles (NPs) during synthesis, zeolite was implemented as the template to support metal-containing NPs, so that both CNTs in the bulk and on a 2D substrate were successfully synthesized. Despite more challenges ahead, there is always hope for widespread ever-new applications for CNTs with the development of technology.

• 한국전기전자재료학회논문지
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• 제21권7호
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• pp.594-598
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• 2008

The metal catalyst particles which there is as impurities on a tip part of carbon nanotube (CNT) are not good to apply it to a nano-electronic device. It was very important the opening of CNT-tip to fix a target bio material and a material to accept in CNT in a biosensor, so we performed $HNO_3$ wet etching to remove the metal catalyst particle which there was on a tip part of CNT grown up in the study and observed the opened CNT-tip with etching time. We synthesized the CNTs using a HF-PECVD method and choses the CNT length of 700 nm for the application of nano-electronic device such as a biosensor etc.. We observed the opened CNT-tip with wet etching times of $HNO_3$ (10, 30, 60 min). From the results, we observed that the CNT-tip was opened with the increase of wet etching time lively. In case of CNTs etched during 60 min, we confirmed that there was not the ratio of Ni included in CNTsI as catalyst. Conclusively, in the case of CNT etched for 60 minutes, it is completely good for application of a biosensor and, in addition, the metal-free CNTs will contribute to the application of other nanoelectronic devices.

• Advances in nano research
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• 제9권2호
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• pp.105-112
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• 2020

Silicene is a two-dimensional (2D) derivative of silicon (Si) arranged in honeycomb lattice. It is predicted to be compatible with the present fabrication technology. However, its gapless properties (neglecting the spin-orbiting effect) hinders its application as digital switching devices. Thus, a suitable band gap engineering technique is required. In the present work, the band structure and density of states of uniformly doped silicene are obtained using the nearest neighbour tight-binding (NNTB) model. The results show that uniform substitutional doping using aluminium (Al) has successfully induced band gap in silicene. The band structures of the presented model are in good agreement with published results in terms of the valence band and conduction band. The band gap values extracted from the presented models are 0.39 eV and 0.78 eV for uniformly doped silicene with Al at the doping concentration of 12.5% and 25% respectively. The results show that the engineered band gap values are within the range for electronic switching applications. The conclusions of this study envisage that the uniformly doped silicene with Al can be further explored and applied in the future nanoelectronic devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.562-564
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• 2001

Transformation of molecular film occurs only usually in air-water interface, 2 dimensions domain's growth and crash are achieved. Organic matter thin film that accumulate molecular film in archaism board only that consist of growth of domain can understand correct special quality of accumulation film supplying information about fine structure and properties of matter of device observing information and so on that is surface forward player and optic enemy using AFM one of SPM application by nano electronics. The stable images are probably due to a strong interaction between the monolayer film and glass substrate. We are unable to obtain molecule resolution in images of the films but did see a marked contrast between images of the bare substrate and those with the network structure film deposited onto it. Formation that prevent when gas phase state and liquid phase state measure but Could know organic matter that molecules form equal and stable film when molecules were not distributed evenly. and accumulated in solid state only.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.564-564
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• 2012

Graphene has been emerged as a fascinating material for future nanoelectronic applications due to its extraordinally electronic properties. However, their zero-bandgap semimetallic nature is a major problem for applications in high performance field-effect transistors (FETs). Graphene nanoribbons (GNRs) with narrow widths (${\geq}10nm$) exhibit semiconducting behavior, which can be used to overcome this problem. In previous reports, GNRs were produced by several approaches, such as electron beam lithography patterning, chemically derived GNRs, longitudinal unzipping of carbon nanotubes, and inorganic nanowire template. Using these methods, however, the width distribution of GNRs was a quiet broad and substantial defects were inevitably occurred. Here, we report a novel approach for fabricating width-tailored GNRs by focused ion beam-assisted chemical vapor deposition (FIB-CVD). Width-tailored phenanthrene ($C_{14}H_{10}$) templates for direct growth of GNRs were prepared on $SiO_2$/Si substrate by FIB-CVD. The GNRs on the templates were synthesized at $900-1,050^{\circ}C$ with introducing $CH_4$ $(20sccm)/H_2$ (10 sccm) mixture gas for 10-300 min. Structural characterizations of the GNRs were carried out using Raman spectroscopy, scanning electron microscopy, and atomic force microscopy.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.495-495
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• 2011

Miniaturized sensors capable of both sensitive and selective real-time monitoring of target analytes are tremendously valuable for various applications ranging from hazard detection to medical diagnostics. The wide-spread use of such sensors is currently limited due to insufficient selectivity for target molecules. We developed selective nanocoatings by combining trinitrotoluene (TNT) receptors bound to conjugated polydiacetylene (PDA) with single-walled carbon nanotube-field effect transistors (SWNT-FET). Selective binding events between TNT molecules and phage display derived TNT receptors were effectively transduced to sensitive SWNT-FET conductance sensors through the PDA coating. The resulting sensors exhibited unprecedented 1 fM sensitivity toward TNT in real time, with excellent selectivity over various similar aromatic compounds. Our biomimetic receptor coating approach may be useful for the development of sensitive and selective micro and nanoelectronic sensor devices for various other target analytes.

• Macromolecular Research
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• 제15권2호
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• pp.142-146
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• 2007

Poly[(1-(9-carbazoly1)ethylene)-co-(3-cinnamoyloxyoctyl-9-carbazolyl)] ethylene (PVK-Cin) was prepared by tethering cinnamate pendants to a carbazole group via an octylene spacer. The photopatternability of the new PVK based-polymer was investigated using a photocrosslinking reaction under UV light illumination $(\lambda=254nm)$. Blends of the PVK-Cin and a soluble poly(phenylene vinylene) (CzEh-PPV) were employed to study the photocrosslinking behavior. Well resolved lithographic patterns were observed in these polymer systems. PVK-Cin produced a blue light emitting pattern both before and after the photocrosslinking reaction. The blends of PVK-Cin and CzEh-PPV also showed corresponding emissions at 398 and 525 (560) nm in the film state.

• Carbon letters
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• 제21권
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• pp.8-15
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• 2017

The thermoelectric Seebeck and Peltier effects of a single walled carbon nanotube (SWCNT) quantum dot nanodevice are investigated, taking into consideration a certain value of applied tensile strain and induced ac-field with frequency in the terahertz (THz) range. This device is modeled as a SWCNT quantum dot connected to metallic leads. These two metallic leads operate as a source and a drain. In this three-terminal device, the conducting substance is the gate electrode. Another metallic gate is used to govern the electrostatics and the switching of the carbon nanotube channel. The substances at the carbon nanotube quantum dot/metal contact are controlled by the back gate. Results show that both the Seebeck and Peltier coefficients have random oscillation as a function of gate voltage in the Coulomb blockade regime for all types of SWCNT quantum dots. Also, the values of both the Seebeck and Peltier coefficients are enhanced, mainly due to the induced tensile strain. Results show that the three types of SWCNT quantum dot are good thermoelectric nanodevices for energy harvesting (Seebeck effect) and good coolers for nanoelectronic devices (Peltier effect).

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집
• /
• pp.562-564
• /
• 2001

Transformation of molecular film occurs only usually in air-water interface, 2 dimensions domain's growth and crash are achieved. Organic matter thin film that accumulate molecular film in archaism board only that consist of growth of domain can understand correct special quality of accumulation film supplying information about fine structure and properties of matter of device observing information and so on that is surface forward player and optic enemy using AFM one of SPM application by nano electronics. The stable images are probably due to a strong interaction between the monolayer film and glass substrate. We are unable to obtain molecule resolution in images of the films but did see a marked contrast between images of the bare substrate and those with the network structure film deposited onto it. Formation that prevent when gas phase state and liquid phase state measure but Could know organic matter that molecules form equal and stable film when molecules were not distributed evenly, and accumulated in solid state only.

• Applied Microscopy
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• 제46권4호
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• pp.206-216
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• 2016

This communication is to elucidate the state-of-the-art of techniques necessary to gather information on a new class of nanoelectronic devices known as memristors and related resistive switching devices, respectively. Unlike classical microelectronic devices such as transistors, the chemical and structural variations occurring upon switching of memristive devices require cutting-edge electron microscopy techniques. Depending on the switching mechanism, some memristors call for the acquisition of atomically resolved structural data, while others rely on atomistic chemical phenomena requiring the application of advanced X-ray and electron spectroscopy to correlate the real structure with properties. Additionally, understanding resistive switching phenomena also necessitates the application not only of pre- and post-operation analysis, but also during the process of switching. This highly challenging in situ characterization also requires the aforementioned techniques while simultaneously applying an electrical bias. Through this review we aim to give an overview of the possibilities and challenges as well as an outlook onto future developments in the field of nanoscopic characterization of memristive devices.