• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.10
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• pp.438-442
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• 2005

Si nanocrystal (Si NC) memory device has several advantages such as better retention, lower operating voltage, reduced punch-through and consequently a smaller cell area, suppressed leakage current. However, the physical and electrical reasons for this behavior are not completely understood but could be related to interface states of Si NCs. In order to find out this effect, we characterized electrical properties of Si NCs embedded in a SiO$_{2}$ layer by scanning probe microscopy (SPM). The Si NCs were generated by the laser ablation method with compressed Si powder and followed by a sharpening oxidation. In this step Si NCs are capped with a thin oxide layer with the thickness of 1$\~$2 nm for isolation and the size control. The size of 51 NCs is in the range of 10$\~$50 m and the density around 10$^{11}$/cm$^{2}$ It also affects the interface states of Si NCs, resulting in the change of electrical properties. Using a conducting tip, the charge was injected directly into each Si NC, and the image contrast change and dC/dV curve shift due to the trapped charges were monitored. The results were compared with C-V characteristics of the conventional MOS capacitor structure.

• Korean Journal of Materials Research
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• v.32 no.6
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• pp.307-312
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• 2022

Metal halide perovskite (MHP) nanocrystals (NCs) have emerged as promising materials for various optoelectronic applications including photovoltaics, light-emitting devices, and photodetectors because of their high absorption coefficient, high diffusion length, and photoluminescence quantum yield. However, understanding the morphological evolution of the MHP NCs as well as their controlled assembly into optoelectronic devices is still challenging and will require further investigation of the colloidal chemistry. In this study, we found that the amount of n-octylamine (the capping agent) plays a crucial role in inducing further growth of the MHP NCs into one-dimensional nanowires during the aging process. In addition, we demonstrate that the dielectrophoresis process can permit self-alignment of the MHP nanowires with uniform distribution and orientation on interdigitated electrodes. A strong light-matter interaction in the MHP NWs array was observed under UV illumination, indicating the photo-induced activation of their luminescence and electrical current in the self-aligned MHP nanowire arrays.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.267.2-267.2
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• 2016

Semiconductor photo-catalysis offers the potential for complete removal of toxic chemicals through its effective and broad potential applications. Various new compounds and materials for chemical catalysts were synthesized in the past few decades. As one of the most important II-VI group semiconductors, zinc sulfide (ZnS) with a wide direct band gap of 3.8 eV has been extensively investigated and used as a catalyst in photochemistry, environmental protection and in optoelectronic devices. In this work, the ZnS films and nanostructures have been successfully prepared by wet chemical method. We show that the agglomerates with four successive scales are always observed in the case of the homogeneous precipitation of zinc sulfide. Hydrodynamics plays a crucial role to determine the size of the largest agglomerates; however, other factors should be invoked to interpret the complete structure. In addition, studies of the photocatalytic properties by exposure to UV light irradiation demonstrated that ZnS nanocrystals (NCs) are good photo-catalysts as a result of the rapid generation of electron-hole pairs by photo-excitation and the highly negative reduction potentials of excited electrons. A combination of their unique features of high surface-to volume ratios, carrier dynamics and rich photo-catalytic suggests that these ZnS NCs will find many interesting applications in semiconductor photo-catalysis, solar cells, environmental remediation, and nano-devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.737-749
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• 2016

Recently perovskite materials with much cheaper cost and marvellous optoelectronic properties have been studied for next generation LED display devices overseas. Technology development trends of inorganic $CsPbX_3$(X=halogen) based LEDs (PeLEDs) with assumed high stability were investigated on literature worldwide. It was found that syntheses methods of these nanocrystals (NCs, mainly quantum dots, QDs) made great progress. A new room temperature synthesis method showed outstanding PL (photoluminescence) properties such as high quantum yield (QY), narrow emission width, storage stability comparable with, or often exceeding those of conventional hot injection method and CdSe@ZnS type inorganic colloidal QDs. PeLEDs with shell layers might be more promising, indicating urgent real research start of this solution processing technology for small businesses in Korea.

• Bulletin of the Korean Chemical Society
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• v.30 no.12
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• pp.3011-3015
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• 2009

Structural and thermo-analytical studies were carried out to understand the phase formation kinetics of the single phase $Bi_5Ti_3FeO_{15}$ (BTFO) nanocrystals in $Bi_2O_3-Fe_2O_3-TiO_2$, during the polymerized complex (PC) synthesis method. The crystallization of Aurivillius phase $Bi_5Ti_3FeO_{15}$ layered perovskite was found to be initiated and achieved under the temperature conditions in the range of ${\sim}$800 to 1050$^{\circ}C$. The activation energy for grain growth of $Bi_5Ti_3FeO_{15}$ nanocrystals (NCs) was very low in case of NCs formed by PC (2.61 kJ/mol) than that formed by the solid state reaction (SSR) method (10.9 kJ/mol). The energy involved in the phase transformation of Aurivillius phase $Bi_5Ti_3FeO_{15}$ from $Bi_2O_3-Fe_2O_3-TiO_2$ system was ${\sim}$ 69.8 kJ/mol. The formation kinetics study of $Bi_5Ti_3FeO_{15}$ synthesized by SSR and PC methods would not only render a large impact in the nanocrystalline material development but also in achieving highly efficient visible photocatalysts.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.699-705
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• 2008

Capacitance versus voltage (C-V) characteristics of Ge-nanocrystal (NC)-embedded metal-oxide-semiconductor (MOS) capacitors with $HfO_2$ gate material were investigated in this work. The current versus voltage (I-V) curves obtained from Ge-NC-embedded MOS capacitors fabricated with the $NH_3$ annealed $HfO_2$ gate material reveal the reduction of leakage current, compared with those of MOS capacitors fabricated with the $O_2$ annealed $HfO_2$ gate material. The C-V curves of the Ge-NC-embedded MOS capacitor with $HfO_2$ gate material annealed in $NH_3$ ambient exhibit counterclockwise hysteresis loop of about 3.45 V memory window when bias voltage was varied from -10 to + 10 V. The observed hysteresis loop indicates the presence of charge storages in the Ge NCs caused by the Fowler-Nordheim (F-N) tunneling. In addition, capacitance versus time characteristics of Ge-NC-embedded MOS capacitors with $HfO_2$ gate material were analyzed to investigate their retention property.