• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1096-1099
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• 2005

Multi-walled carbon nanotubes (CNTs) grown on catalyst dots by thermal chemical vapor deposition were vertically aligned with a high population density. Such densely populated CNTs showed poor field emission characteristics due to the electrical screening effect. We reduced the number density of CNTs using an adhesive tape treatment. For dotpatterned CNTs, the tape treatment decreased the CNT density by three orders of magnitude, drastically improved the turn-on electric field from 4.8 to $1.8V/{\mu}m$, and changed the emission image from spotty to uniform luminescence. We also report long-term emission stability of dot-patterned CNTs by measuring the emission currents with time at different duty ratios.

• 한국산학기술학회논문지
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• 제5권3호
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• pp.223-226
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• 2004

나노 패턴을 갖는 미세 구조물을 낮은 비용으로 생산하기 위해서는 플라스틱 재료를 이용하는 것이 필수적이고, 대량생산이 가능한 가공방법으로 사출성형 공정기술이 유망하다. 본 연구에서는 e-beam 리소그라피로 제작된 석영원판 내의 100-500nm크기의 선과 점 형상을 간단한 thermal embossing 공정을 이용하여 액상 PDMS를 고형화 시킨 후에 원판과 분리시켜 PDMS 몰드를 제작하였다. 실험결과, 원판에 있는 나노 크기의 다양한 패턴들은 PDMS 몰드에 균일하게 전사되었고, 이 몰드는 사출성형용 스탬퍼 제작에 유용하게 이용될 수 있을 것으로 사료된다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.236-237
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• 2007

A single-wall carbon nanotube (SWNT) transparent conductive film (TCF) was fabricated using a simple inkjet printing method. The TCF could be selectively patterned by controlling the dot size to diameters as small as 34${\mu}m$. In thisrepeatable and scalable process, we achieved 71% film transmittance and a resistance of 900 ohm/sq sheet with an excellent uniformity, about $\pm$5% deviation overall. Inkjet printing of SWNT is substrate friendly and the TCF is printed on a flexible substrate. This method of fabrication using direct printing permits mass production of TCF in a large area process, reducing processing steps and yielding low-cost TCF fabrications on a designated area using simple printing.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.658-658
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• 2013

Graphene is an attractive material for various device applications due to great electrical properties and chemical properties. However, lack of band gap is significant hurdle of graphene for future electrical device applications. In the past few years, several methods have been attempted to open and tune a band gap of graphene. For example, researchers try to fabricate graphene nanoribbon (GNR) using various templates or unzip the carbon nanotubes itself. However, these methods generate small driving currents or transconductances because of the large amount of scattering source at edge of GNRs. At 2009, Bai et al. introduced graphene nanomesh (GNM) structures which can open the band gap of large area graphene at room temperature with high current. However, this method is complex and only small area is possible. For practical applications, it needs more simple and large scale process. Herein, we introduce a photosensitive graphene device fabrication using CdSe QD coated nano-porous graphene (NPG). In our experiment, NPG was fabricated by thin film anodic aluminum oxide (AAO) film as an etching mask. First of all, we transfer the AAO on the graphene. And then, we etch the graphene using O2 reactive ion etching (RIE). Finally, we fabricate graphene device thorough photolithography process. We can control the length of NPG neckwidth from AAO pore widening time and RIE etching time. And we can increase size of NPG as large as 2 $cm^2$. Thin CdSe QD layer was deposited by spin coatingprocess. We carried out NPG structure by using field emission scanning electron microscopy (FE-SEM). And device measurements were done by Keithley 4200 SCS with 532 nm laser beam (5 mW) irradiation.

• Advances in nano research
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• 제5권1호
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• pp.13-25
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• 2017

We examine the total optical dielectric function (TODF) of impurity doped GaAs quantum dot (QD) from the viewpoint of anisotropy, position-dependent effective mass (PDEM) and position dependent dielectric screening function (PDDSF), both in presence and absence of noise. The dopant impurity potential is Gaussian in nature and noise employed is Gaussian white noise that has been applied to the doped system via two different modes; additive and multiplicative. A change from fixed effective mass and fixed dielectric constant to those which depend on the dopant coordinate manifestly affects TODF. Presence of noise and also its mode of application bring about more rich subtlety in the observed TODF profiles. The findings indicate promising scope of harnessing the TODF of doped QD systems through expedient control of site of dopant incorporation and application of noise in desired mode.

• 한국진공학회지
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• 제18권5호
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• pp.365-371
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• 2009

크기가 다른 양자점 (chirped 양자점) 구조에 대하여 전기발광 (Electroluminescence, EL) 특성과 광발광 (Photoluminescence, PL) 특성을 측정하고 비교 분석하였다. PL 특성에서는 양자점의 기저준위에 의한 피이크가 우세하게 나타난 반면, EL 특성에서는 여기준위에 의한 특성이 우세하게 나타났다. 이와 같은 특성비교로부터 기저준위도 EL 특성에 영향을 미칠 수 있도록 chirped 양자점 구조를 설계하면 파장대역폭이 더욱 넓은 고휘도 발광소자 개발이 가능할 것임을 제안하였다.

• 반도체디스플레이기술학회지
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• 제20권1호
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• pp.54-58
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• 2021

The RGO with controllable oxygen functional groups is a novel material as the active layer of resistive switching memory through a reduction process. We designed a nanoscale conductive channel induced by local oxygen ion diffusion in an Au / RGO+GQD / Al resistive switching memory structure. A strong electric field was locally generated around the Al metal channel generated in BIL, and the local formation of a direct conductive low-dimensional channel in the complex RGO graphene quantum dot region was confirmed. The resistive memory design of the complex RGO graphene quantum dot structure can be applied as an effective structure for charge transport, and it has been shown that the resistive switching mechanism based on the movement of oxygen and metal ions is a fundamental alternative to understanding and application of next-generation intelligent semiconductor systems.

• 한국정밀공학회지
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• 제32권1호
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• pp.63-68
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• 2015

Micro/nano patterns for optical concentration and diffusion have been studied in the various fields such as displays, optics, and sensors. Conventional micro patterns were continuous and linear shapes due to using linear-type light sources, however, recently non-continuous patterns have been applied as point sources are used for dot-type light sources such as LEDs and OLEDs. In this study, a hybrid machining technology combining an indentation machining method and an AAO process was developed for manufacturing the non-continuous micro patterns having nano patterns. First, mirror-like surfaces ($R_a<20nm$) of pure Aluminum substrates were obtained by optimizing cutting conditions. Then, The letter of 'K' consisting of the arrays of the micro patterns was manufactured by the indentation machining method which has a similar principle to indentation hardness testing. Finally, nano patterns were machined by AAO process on the micro patterns. Conclusively, a specific letter having nano-micro hybrid patterns was manufactured in this study.

• 한국결정성장학회지
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• 제29권6호
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• pp.352-358
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• 2019

최근 인쇄용지는 단순히 정보 전달의 기능을 넘어서 미적, 예술적 가치가 부가면서 고품질의 인쇄가 가능한 도공지(coated paper)에 대한 시장의 수요가 증가하고 있다. 특히 실사급 고품질의 인쇄가 가능한 잉크젯 프린팅의 도공지는 잉크의 인쇄적성을 향상시키기 위하여 표면에 젖음성(wettability)과 다공성 구조(porous structure)를 갖는 도공층의 역할이 매우 중요하다. 본 연구에서는 나노 실리카 졸 입자에 실란 커플링제로 표면처리하고 수용성 결합제인 폴리비닐알콜(PVA)와 혼합하여 도공액(coating color)를 제조하고 원지(base paper)에 코팅하여 도공층을 제조하였다. 실란 커플링제로 표면처리한 나노 실리카 도공층은 표면처리하지 않은 도공층과 비교하여 균일한 기공 분포 및 평탄한 표면 거칠기를 가지며, 판매용 고급 인화지와 유사한 광택도를 갖는 것을 확인하였다. 특히 잉크의 망점(dot)에 대한 진원도로 평가하는 인쇄적성 평가 결과 실란 커플링제로 표면처리한 도공지는 다층 구조의 도공층을 갖는 판매용 고급 인화지보다 더 우수한 결과를 얻을 수 있었다. 이러한 결과는 실란 커플링제 표면처리를 통하여 나노 실리카 입자의 분산성이 향상되어 우수한 젖음성과 균일한 기공 분포를 갖는 도공층 형성이 가능하였기 때문으로 확인되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.184-184
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• 2012

Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.