• Journal of the Korean Society for Heat Treatment
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• v.29 no.6
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• pp.272-276
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• 2016

Al doped ZnO (AZO) single layer and AZO/Ag bi-layered films were deposited on the glass substrates by radio frequency and direct current magnetron sputtering and then the effect of Ag buffer layer on the electrical and optical properties of the films was investigated. The thicknesses of AZO upper layer was kept as 100 nm, while Ag buffer layer was varied from 5 to 15 nm. The observed results mean that opto-electrical properties of the AZO films is influenced with Ag buffer layer and AZO film with 10 nm thick Ag buffer layer show the higher opto-electrical performance than that of the AZO single layer film prepared in this study.

• Journal of Surface Science and Engineering
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• v.38 no.6
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• pp.227-233
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• 2005

Electrochemical characteristics of welded stainless steels containing Ti have been studied by using the electrochemical techniques in 0.5 M $H_2SO_4$+0.01 M KSCN solutions at $25^{\circ}C$. Stainless steels with 12 mm thick-ness containing $0.2{\~}0.9 wt\%$ Ti were fabricated with vacuum melting and following rolling process. The stainless steels were solutionized for 1hr at $1050^{\circ}C$ and welded by MIG method. Samples were individually prepared with welded zone, heat affected zone, and matrix for intergranular corrosion and pitting test. Optical microscope, XRD and SEM are used for analysing microstructure, surface and corrosion morphology of the stainless steels. The welded zone of the stainless steel with lower Ti content have shown dendrite structure mixed with $\gamma$ and $\delta$ phase. The Cr-carbides were precipitated at twin and grain boundary in heat affected zone of the steel and also the matrix had the typical solutionized structure. The result of electrochemical measurements showed that the corrosion potential of welded stainless steel were Increased with higher Ti content. On the other hand, reactivation($I_r$), passivation and active current($I_a$) density were decreased with higher Ti content. In the case of lower Ti content, the corrosion attack of welded stainless steel was remarkably occurred along intergranular boundary and ${\gamma}/{\delta}$ phase boundary in heat affected zone.

• 한국금형공학회:학술대회논문집
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• 2008.06a
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• pp.35-38
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• 2008

A pattern master and a Ni stamper for 50nm class of patterns are fabricated through e-beam lithography and Ni electroforming process. A model pattern set is designed, which is based on unit patterns of 50nm, 100nm, 150nm and 200nm in length and 50nm in width. The e-beam process is optimized to fabricate designed patterns with some parameters including dose, accelerating voltage, focal distance and developing time. For Ni electroforming to fabricate Ni stamper, a seed layer, a conducting layer, is deposited first on the pattern master fabricated by an e-beam lithography process. Ni, Ti/Ni and Cr are first tested to find optimal seed layer process. Currently the best result is obtained when adopting Cr deposited to be 100nm thick with continuous tilting motion of the master substrate during the deposition process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.47-50
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• 2002

ZnO nanowires were coated conformally with aluminum oxide ($Al_{2}O_{3}$) material by atomic layer deposition (ALD). The ZnO nanowires were first synthesized on a Si (100) substrate at $1380^{\circ}C$ from ball-milled ZnO powders by a thermal evaporation procedure with an argon carrier gas without any catalysts; the length and diameter of these ZnO nanowires are $20\sim30{\mu}m$ and $50{\sim}200$ nm, respectively. $Al_{2}O_{3}$ films were then deposited on these ZnO nanowires by ALD at a substrate temperature of $300^{\circ}C$ using trimethylaluminum (TMA) and distilled water ($H_{2}O$). Transmission electron microscopy (TEM) images of the deposited ZnO nanowires revealed that 40nm-thick $Al_{2}O_{3}$ cylindrical shells surround the ZnO nanowires.

• Journal of Powder Materials
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• v.17 no.3
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• pp.230-234
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• 2010

Homogenous silica-coated $CoFe_2O_4$ samples with controlled silica thickness were synthesized by the reverse microemulsion method. First, 7 nm size cobalt ferrite nanoparticles were prepared by thermal decomposition methods. Hydrophobic cobalt ferrites were coated with controlled $SiO_2$ using polyoxyethylene(5)nonylphenylether (Igepal) as a surfactant, $NH_4OH$ and tetraethyl orthosilicate (TEOS). The well controlled thickness of the silica shell was found to depend on the reaction time and the amount of surfactant used during production. Thick shell was prepared by increasing reaction time and small amount of surfactant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.127-128
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• 2008

The electrical characteristics of VARIOT (variable oxide thickness) with various $HfO_2$ thicknesses on thin $SiO_2$ or $Al_2O_3$ layer were investigated. Especially, the charge trapping characteristics of $HfO_2$ layer were intensively studied. The thin $HfO_2$ layer has small charge trapping characteristics while the thick $HfO_2$ layer has large memory window. Therefore, the $HfO_2$ layer is superior material and can be applied to charge storage as well as tunneling barrier of the non-volatile memory applications.

• Journal of the Semiconductor & Display Technology
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• v.14 no.3
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• pp.7-11
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• 2015

In order to protect the patterned mask from contamination during lithography process, pellicle has become a critical component for Extreme Ultraviolet (EUV) lithography technology. According to EUV pellicle requirements, the pellicle should have high EUV transmittance and robust mechanical property. In this study, silicon nitride, which is well-known for its remarkable mechanical property, was used as a pellicle membrane material to achieve high EUV transmittance. Since long silicon wet etching process time aggravates notching effect causing stress concentration on the edge or corner of etched structure, the remaining membrane is prone to fracture at the end of etch process. To overcome this notching effect and attain high transmittance, we began preparing a rather thick (200 nm) $SiN_x$ membrane which can be stably manufactured and was thinned into 43 nm thickness with HF wet etching process. The measured EUV transmittance shows similar values to the simulated result. Therefore, the result shows possibilities of HF thinning processes for $SiN_x$ EUV pellicle fabrication.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.251-265
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• 2000

S $m_{2}$F $e_{17}$ $N_{x}$ film magnets using a S $m_{2}$F $e_{17}$ target were prepared at $N_{2}$ gas atmosphere using a Nd-YAG laser ablation technique. The effect of nitrogen pressure, deposition temperature, pulsation time and film thickness on the structure and magnetic properties of S $m_{2}$F $e_{17}$ $N_{x}$ film were studied. Increasing the nitrogen pressure up to 5 atm. was confirmed to lead the formation of complete S $m_{2}$F $e_{17}$ $N_{x}$ compound. Optimized magnetic properties with the nitrogenation temperature ranging over 500-53$0^{\circ}C$ could be obtained by extending the nitrogenation time up to 4 hours. Relatively low coercivities of 400~600 Oe were exhibited from the S $m_{2}$F $e_{17}$ $N_{x}$ films having the thickness of 50~100 nm while 4$\pi$ $M_{s}$ of 10~12 kG could be achieved. In-plane anisotropic characteristic, which was the basic goal in this study, was achieved by controlling the nitrogenation parameters.ameters.ers.ameters.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.111-111
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• 2010

최근 전자 소자의 집적기술은 기존의 2차원에서 System on package (SOP) 개념에 기반을 둔 3차원 집적 기술로 발전 되어가고 있다. 소자의 3차원 실장을 실현시키는 과정에서 세라믹의 여러 유용성이 언급되어져 왔지만, 취성이 매우 크다는 등의 단점이 있었다. 이러한 이유로 연성을 가지는 폴리머와 세라믹을 합성한 복합체 기판에 대하여 많은 연구가 되고 있다. 그러나 세라믹 제작을 위해서는 높은 공정온도가 요구되고 있고 이러한 높은 공정상에서의 온도는 3차원 실장에 있어서 문제점이 되고 있다. 이러한 문제점을 극복하기 위하여 상온에서 치밀한 세라믹 후막을 제작할 수 있는 공정인 Aerosol Deposition Method (ADM)방법으로 세라믹-폴리머 후막의 제조를 시도하였다. 일반적으로 ADM은 수백 나노의 출발 파우더를 사용하여 치밀한 세라믹 막을 형성하는데 사용된다. 본 연구에서는 ADM으로 100 nm미만의 나노 세라믹 파우더를 사용하여 다공성의 세라믹 후막을 제조한 후 resin을 함침시키는 방법으로 세라믹-폴리머 후막의 제조를 시도하였다. 그 결과 운송가스, aerosol 농도 등의 공정조건을 변화시켜 다공성의 $Al_2O_3$ 후막을 제조하였고, 이 다공성 후막은 반투명의 특성을 보이며 고충전율로 형성되었다. 이렇게 제조된 나노 다공성 $Al_2O_3$ 후막에 cyanate ester resin을 함침시키는 방법을 사용하여 $Al_2O_3$-cyanate ester 복합체 후막을 제조하였으며, 이의 비유전율 및 품질계수는 각각 1 MHz에서 6.7, 1000으로 우수한 유전특성을 보임이 확인되었다.

• Korean Journal of Metals and Materials
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• v.48 no.12
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• pp.1109-1115
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• 2010

ZnO thin films were deposited on Si(100) substrates at low temperatures ($44^{\circ}C{\sim}210^{\circ}C$) by atomic layer deposition using DEZn (diethyl zinc) and water as precursors. The film thickness was measured by ellipsometry calibrated with cross-sectional TEM. The phase formation, microstructure evolution, UV-absorbance, and chemical composition changes were examined by XRD, SEM, AFM, TEM, UV-VIS-NIR, and AES, respectively. A uniform amorphous ZnO layer was formed even at $44^{\circ}C$ while stable crystallized ZnO films were deposited above $90^{\circ}C$. All the samples showed uniform surface roughness below 3 nm. Fully crystallized ZnO layers with a band-gap of 3.37 eV without carbon impurities can be formed at substrate temperatures of less than $90^{\circ}C$.