• Animal Systematics, Evolution and Diversity
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• 제24권2호
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• pp.205-208
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• 2008

Two new marine sponges in family Halichondriidae, Halichondria ulleungensis n. sp. and H. hongdoenesis n. sp. are collected from Ulleungdo Island and Hongdo Island, Korea by SCUBA diving during 2003-2004. H. ulleungensis n. sp. is similar to H. corrugata Diaz, Pomponi and van Soest, 1993 in the type of spicule, but it is different in growth form and choanosomal skeleton. The growth form is encrusting, with numerous erected cylindrical tube, comparing with massive-lobate of H. corrugata. The choanosomal skeleton is confused with loosely arranged oxea tract, comparing with densely tracts with many spicules of H. corrugata. H. hongdoenesis n. sp. is similar to H. surrubicunda Hoshino, 1981 in type of spicule and growth form, but this species has two kinds (thick and thin) of oxea.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.578-578
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• 2012

Graphene, a flat one-atom-thick two-dimensional layer of carbon atoms, is considered to be a promising candidate for nanoelectronics due to its exceptional electronic properties. Most of all, future nanoelectronics such as flexible displays and artificial electronic skins require low cost manufacturing process on flexible substrate to be integrated with high resolutions on large area. The solution based printing process can be applicable on plastic substrate at low temperature and also adequate for fabrication of electronics on large-area. The combination of printed electronics and graphene has allowed for the development of a variety of flexible electronic devices. As the first step of the study, we prepared the gate electrodes by printing onto the gate dielectric layer on PET substrate. We showed the performance of graphene field-effect transistor with electrohydrodynamic (EHD) inkjet-printed Ag gate electrodes.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.659-662
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• 2007

The characteristics of a $SiN_x$ passivation layer grown by a specially designed catalyzer enhanced chemical vapor deposition (CECVD) system and electrical and optical properties of OLEDs passivated with the $SiN_x$ layer are described. Despite the low substrate temperature, the single $SiN_x$ passivation layer, grown on the PC substrate, exhibited a low water vapor transmission rate of $2{\sim}6{\times}10^{-2}\;g/m^2/day$ and a high transmittance of 87 %. In addition, current-voltage-luminescence results of an OLED passivated with a 150 nm-thick $SiN_x$ film compared to nonpassivated sample were identical indicating that the performance of an OLED is not critically affected by radiation from tungsten catalyzer during the $SiN_x$ deposition.

• Animal Systematics, Evolution and Diversity
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• 제25권1호
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• pp.15-18
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• 2009

A new species of genus Clathria (Microciona) (Demospongiae: Poecilosclerida: Microcionidae), Clathria (Microciona) sinyangensis n. sp. was collected from Intertidal zone by hand at Seopjikoji, Sinyang, Jejudo Island, Korea on 15 Oct. 2008. C. (M.) sinyangensis n. sp. is closely related to C. (M.) pennata Lambe, 1895 in their spicules, but thick subtylostyle of new species is smaller than that of C. (M.) pennata's and has three sizes of toxa. Also, the new species has no dermal membrane.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.244-244
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• 2009

Carbon nanotubes (CNTs) have excellent electrical, chemical stability, mechanical and thermal properties. In this paper, networks of Multi-walled carbon nanotube (MWCNT) materials were investigated as transparent electrode. Sensor films were fabricated by air spray method using the multi-walled CNTs solution on glass substrates. The film that was sprayed with the MWCNT dispersion for 60 sec, was 300nm thick. And the electric resistivity and the light transmittance rate are $2{\times}10^2{\Omega}cm$ and 60%, respectively.

• Bulletin of the Korean Chemical Society
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• 제25권10호
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• pp.1564-1566
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• 2004

• 한국재료학회지
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• 제16권3호
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• pp.151-156
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• 2006

A method for fabrication of nano-scale GaN structure by inductively coupled plasma etching is proposed, exploiting a thermal dewetting of Pt thin film as an etch mask. The nano-scale Pt metal islands were formed by the dewetting of 2-dimensional film on $SiO_2$ dielectric materials during rapid thermal annealing process. For the case of 30 nm thick Pt films, pattern formation and dewetting was initiated at temperatures greater $600^{\circ}C$. Controlling the annealing temperature and time as well as the thickness of the Pt metal film affected the size and density of Pt islands. The activation energy for the formation of Pt metal island was calculated to be 23.2 KJ/mole. The islands show good resistance to dry etching by a $CF_4$ based plasma for dielectric etching indicating that the metal islands produced by dewetting are suitable for use as an etch mask in the fabrication of nano-scale structures.

• 한국전기전자재료학회논문지
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• 제29권11호
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• pp.690-695
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• 2016

Induction cooktop has a great attention due to its safety, quick heating and cleanness compared to gas oven. However, the materials for induction cookware is limited to steel or stainless-steel which has the magnetic property. Recently, it has been tried to apply various porcelain to induction cookware after printing the silver layer on the bottom of cookware plates and co-firing at high temperature. Glass frits are added in the silver paste to improve an adhesion force between porcelain materials containers and transferred silver layer. The hybrid silver pastes for induction cookware requires the proper electrical resistance and the thermal conductivity with base plates. After sintering process at $800^{\circ}C$, a part of melted glass migrated to the porcelain and the rest of the glass frit was exposed to the surface. It was confirmed that most of the glass frit formed an adhesion layer between the porcelain and transferred silver layer that enhances the adhesion force.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 춘계학술대회
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• pp.252-257
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• 2004

Nanometer-sized structures are being applied to many devices including micro/nano electronics, optoelectronics, quantum devices, MEMS/NEMS, biosensors, etc. Especially, the thin film with submicron thickness is a basic structure for fabricating these devices, but its mechanical behaviors are not well understood. The mechanical properties of the thin film are different from those of the bulk structure and are difficult to measure because of its handling inconvenience. Several techniques have been applied to mechanical characterization of the thin film, such as nanoindentation test, micro/nano tensile test, strip bending test, etc. In this study, we focus on the strip bending test because of its high accuracy and moderate specimen preparation efforts, and measure Au thin film, which is a very popular material in micro/nano electronic devices. Au film is deposited on Si substrate by evaporation process, of which thickness is 100nm. Using the strip bending test, we obtain elastic modulus, yield and ultimate tensile strength, and residual stress of Au thin film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.264-264
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• 2007

$B_2Mg_{2/3}/Nb_{4/3}O_7\;(B_2MN)$ thin films and $Bi_{3/2}MgNb_{3/2}O_7\;(B_{1.5}MN)$ thin films were deposited as a function of various deposition temperatures on Pt/$TiO_2/SiO_2$/Si substrates by radio frequency magnetron sputtering system. Both of their thin films are shown to crystalline phase at $500^{\circ}C$, deposition temperature, using 100W RF power. The composition of them and structural micro properties are investigated by RBS spectrum and SEM, AFM. 200 nm-thick $B_2MN$ thin films were deposited at room temperature had capacitance density of $151nF/cm^2$ at 100kHz, dissipation factor of 0.003 and had capacitance density of $584nF/cm^2$ at 100kHz, dissipation factor of 0.0045 at $500^{\circ}C$ deposition temperature. Both of their dielectric constant deposited at room temperature and at $500^{\circ}C$ were each approximately 40 and 100.