• Journal of Advanced Navigation Technology
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• v.20 no.1
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• pp.65-71
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• 2016

Quantum-dot cellular automata (QCA) consists of nano-scale cells and demands very low power consumption so that it is one of the alternative technologies that can overcome the limits of scaling CMOS technologies. Typical BCD-EXCESS 3 code converters using QCA have not considered the scalability so that the architectures are not suitable for a large scale circuit design. Thus, we design a BCD-EXCESS 3 code converter with scalability using QCADesigner and verify the effectiveness by simulation. Our structure have reduced 32 gates and 7% of garbage space rate compare with typical URG BCD-EXCESS 3 code converter. Also, 1 clock is only needed for circuit expansion of our structure though typical QCA BCD-EXCESS 3 code converter demands 7 clocks.

• Transactions on Electrical and Electronic Materials
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• v.7 no.4
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• pp.173-179
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• 2006

Due to the limitations of the channel length, the lateral spread for two-dimensional impurity distributions is critical for the analysis of devices including the integrated complementary metal oxide semiconductor (CMOS) circuits and high frequency semiconductor devices. The developed codes were then compared with the two-dimensional implanted profiles measured by transmission electron microscope (TEM) as well as simulated by a commercial TSUPREM4 for verification purposes. The measured two-dimensional TEM data obtained by chemical etching-method was consistent with the results of the developed analytical model, and it seemed to be more accurate than the results attained by a commercial TSUPREM4. The developed codes can be applied on a wider energy range $(1KeV{\sim}30MeV)$ than a commercial TSUPREM4 of which the maximum energy range cannot exceed 1MeV for the limited doping elements. Moreover, it is not only limited to diffusion process but also can be applied to implantation due to the sloped and nano scale structure of the mask.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.10-10
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• 2008

Silicide is inevitable for CMOSFETs to reduce RC delay by reducing the sheet resistance of gate and source/drain regions. Ni-silicide is a promising material which can be used for the 65nm CMOS technologies. Ni-silicide was proposed in order to make up for the weak points of Co-silicide and Ti-silicide, such as the high consumption of silicon and the line width limitation. Low resistivity NiSi can be formed at low temperature ($\sim500^{\circ}C$) with only one-step heat treat. Ni silicide also has less dependence of sheet resistance on line width and less consumption of silicon because of low resistivity NiSi phase. However, the low thermal stability of the Ni-silicide is a major problem for the post process implementation, such as metalization or ILD(inter layer dielectric) process, that is, it is crucial to prevent both the agglomeration of mono-silicide and its transformation into $NiSi_2$. To solve the thermal immune problem of Ni-silicide, various studies, such as capping layer and inter layer, have been worked. In this paper, the Ni-silicide utilizing Pd stacked layer (Pd/Ni/TiN) was studied for highly thermal immune nano-scale CMOSFETs technology. The proposed structure was compared with NiITiN structure and showed much better thermal stability than Ni/TiN.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.11
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• pp.1-7
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• 2008

In this work, a two dimensional, self-consistent Poisson-$Schr{\ddot{o}}dinger$ solver has been implemented to study C-V characteristics in nanometer scale MuGFETs with considering quantum effects. The quantum-mechanical effects on gate-channel capacitance for different device dimension and gate configurations of nanometer scale MuGFETs have been analyzed. It has been found that 4he gate-channel capacitance per unit gate area is increased as the device dimension decreases. For different gate configurations, the gate-channel capacitance is decreased with increase of effective gate number. Those resu1ts have been explained by the distribution profile of electron concentration in the silicon surface and inversion capacitance. The length of inversion-layer centroid has been calculated from inversion capacitance with device dimension and gate configurations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.99-100
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• 2006

Silicon-on-insulator(SOI) MOSFET with SiGe/Si heterostructure channel is an attractive device due to its potent use for relaxing several limits of CMOS scaling, as well as because of high electron and hole mobility and low power dissipation operation and compatibility with Si CMOS standard processing. SOI technology is known as a possible solution for the problems of premature drain breakdown, hot carrier effects, and threshold voltage roll-off issues in sub-deca nano-scale devices. For the forthcoming generations, the combination of SiGe heterostructures and SOI can be the optimum structure, so that we have developed SOI n-MOSFETs with SiGe/Si heterostructure channel grown by reduced pressure chemical vapor deposition. The SOI n-MOSFETs with a SiGe/Si heterostructure are presented and their DC characteristics are discussed in terms of device structure and fabrication technology.

• Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
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• v.7 no.2
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• pp.227-236
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• 2017

Quantum-dot cellular automata(QCA) consists of nano-scale cells and demands very low power consumption so that it is one of the alternative technologies that can overcome the limits of scaling CMOS technologies. Various circuits on QCA have been researched until these days, a latch required for counter and state control has been proposed as a component of sequential logic circuits. A latch uses a feedback loop to maintain previous state. In QCA, a latch uses a square structure using 4 clocks for feedback loop. Previous latches have been proposed using many cells and clocks in coplanar. In this paper, in order to eliminate these defects, we propose a SR and D latch using multilayer structure on QCA. Proposed three dimensional loop structure is based on multilayer and consists of 3 layers. Each layer has 2 clock differences between layers in order to reduce interference. The proposed latches are analyzed and compared to previous designs.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.9-9
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• 2011

The transfer of nano-science accomplishments into technology is severely hindered by a lack of understanding of barriers to nanoscale manufacturing. The NSF Center for High-rate Nanomanufacturing (CHN) is developing tools and processes to conduct fast massive directed assembly of nanoscale elements by controlling the forces required to assemble, detach, and transfer nanoelements at high rates and over large areas. The center has developed templates with nanofeatures to direct the assembly of carbon nanotubes and nanoparticles (down to 10 nm) into nanoscale trenches in a short time (in seconds) and over a large area (measured in inches). The center has demonstrated that nanotemplates can be used to pattern conducting polymers and that the patterned polymer can be transferred onto a second polymer substrate. Recently, a fast and highly scalable process for fabricating interconnects from CMOS and other types of interconnects has been developed using metallic nanoparticles. The particles are precisely assembled into the vias from the suspension and then fused in a room temperature process creating nanoscale interconnect. The center has many applications where the technology has been demonstrated. For example, the nonvolatile memory switches using (SWNTs) or molecules assembled on a wafer level. A new biosensor chip (0.02 $mm^2$) capable of detecting multiple biomarkers simultaneously and can be in vitro and in vivo with a detection limit that's 200 times lower than current technology. The center has developed the fundamental science and engineering platform necessary to manufacture a wide array of applications ranging from electronics, energy, and materials to biotechnology.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.1
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• pp.125-133
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• 2010

A versatile micro-robotic platform for micro/nano scale assembly has been demanded in a variety of application areas such as micro-biology and nanotechnology. In the near future, a flexible and compact platform could be effectively used in a scanning electron microscope chamber. We are developing a platform that consists of miniature mobile robots and a compact positioning stage with multi degree-of-freedom. This paper presents the design and the implementation of a low-cost and compact multi degree of freedom position sensor that is capable of measuring absolute translational and rotational displacement. The proposed sensor is implemented by using a CMOS type image sensor and a target with specific hole patterns. Experimental design based on statistics was applied to finding optimal design of the target. Efficient algorithms for image processing and absolute position decoding are discussed. Simple calibration to eliminate the influence of inaccuracy of the fabricated target on the measuring performance also presented. The developed sensor was characterized by using a laser interferometer. It can be concluded that the sensor system has submicron resolution and accuracy of ${\pm}4{\mu}m$ over full travel range. The proposed vision-based sensor is cost-effective and used as a compact feedback device for implementation of a micro robotic platform.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.371-374
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• 2004

In this paper, Ni Germane-silicide formed on undoped $Si_{0.8}Ge_{0.2}$ as well as source/drain dopants doped $Si_{0.8}Ge_{0.2}$ was characterized by the four-point probe for sheet resistance. x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and field emission scanning electron microscope (FESEM). Low resistive NiSiGe is formed by one step RTP (Rapid thermal processing) with temperature range at $500{\~}700^{\circ}C$. To enhance the thermal stability of Ni Germane-silicide, Ni/Co/TiN structure with different Co concentration were studied in this work. Low sheet resistance was obtained by Ni/Co/TiN structure with high Co concentration using 2-step RTP and it almost keeps the same low sheet resistance even after furnace annealing at $650^{\circ}C$ for 30 min.

• Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
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• v.7 no.10
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• pp.895-903
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• 2017

Quantum Cellular Automata(QCA) is one of the proposed techniques as an alternative solution to the fundamental limitations of CMOS. QCA has recently been extensively studied along with experimental results, and is attracting attention as a nano-scale size and low power consumption. Although the XOR gates proposed in the previous paper can be designed using the minimum area and the number of cells, there is a disadvantage that the number of added cells is increased due to the stability and the accuracy of the result. In this paper, we propose a gate that supplement for the drawbacks of existing XOR gates. The XOR gate of this paper reduces the number of cells by arranging AND gate and OR gate with square structure and propose a half-adder by adding two cells that serve as simple inverters using the proposed XOR gate. Also This paper use QCADesginer for input and result accuracy. Therefore, the proposed half-adder is composed of fewer cells and total area compared to the conventional half-adder, which is effective when used in a large circuit or when a half - adder is needed in a small area.