• 제목/요약/키워드: nano-metrology

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길이 소급성을 갖는 AFM을 이용한 150nm 피치 측정 (150 nm Pitch Measurement using Metrological AFM)

  • 진종한
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2003년도 춘계학술대회 논문집
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    • pp.264-267
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    • 2003
  • Pitch measurements of 150 nm pitch one-dimensional grating standards were carried out using an contact mode atomic force microscopy(C-AFM) with a high resolution three-axis laser interferometer. It was called as 'Nano-metrological AFM' In Nano-metrological AFM, Three laser interferometers were aligned well to the end of AFM tip. Laser sources of the three-axis laser interferometer in the nano-metrological AFM were calibrated with an I$_2$-stablilzed He-Ne laser at a wavelength of 633 nm. So, the Abbe error was minimized and the result of the pitch measurement using the nano-metrological AFM has a traceability to the length standard directly. The uncertainty in the pitch measurement was estimated in accordance with the Guide to the Expression of Uncertainty in Measurement(GUM). The Primary source of uncertainty in the pitch-measurements was derived from repeatability of pitch-measurement, and its value was approx 0.186 nm. Expanded uncertainty(k=2) of less than 5.23 nm was obtained. It is suggested that the metrological AFM is a useful tool for the nano-metrological standard calibration.

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첨단 나노소자 공정제어용 측정기술 연구 (Studies of process measurement technology for manufacturing advanced nano devices)

  • 조용재
    • 진공이야기
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    • 제2권3호
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    • pp.4-10
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    • 2015
  • We developed a real-time three-polarizer spectroscopic ellipsometer based on a new data acquisition algorithm and a general data reduction (the process of extracting the ellipsometric sample parameters from the Fourier coefficients). The data acquisition algorithm measures Fourier coefficients of radiant flux waveform accurately and precisely. The general data reduction is introduced to represent the analytic functions of the standard uncertainties of the ellipsometric sample parameters, and the extracted theoretical values closely agree with the corresponding experimental data. Our approach can be used for optimization of measurement conditions, instrumentation, simulation, standardization, laboratory accreditation, and metrology.

Terahertz transmission through femtosecond-machined metal structures

  • Lee, J.U.;Seo, M.;Kim, D.S.;Jeoung, S.C.;Park, Q-Han
    • 한국레이저가공학회:학술대회논문집
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    • 한국레이저가공학회 2005년도 춘계학술발표대회 논문집
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    • pp.102-103
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    • 2005
  • Using THz time-domain spectroscopy, we study plasmonic band gaps in periodic metal arrays of slits. Femtosecnd machining system guarantees good quality sub millimeter structures for THz spectroscopy. Fabry-Perot effect enhances the transmission when the two resonances cross but does not alter the surface plasmon peak positions.

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나노 액체크로마토그래피-텐덤 질량분석기를 이용하여 N-당질화 위치 및 N-당사슬 구조 규명을 위한 방법 (A Sensitive Method for Identification of N-Glycosylation Sites and the Structures of N-Glycans Using Nano-LC-MS/MS)

  • 조영은;김숙경;백문창
    • 약학회지
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    • 제57권4호
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    • pp.250-257
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    • 2013
  • Biosimilars are important drugs in medicine and contain many glycosylated proteins. Thorough analysis of the glycosylated protein is a prerequisite for evaluation of biosimilar glycan drugs. A method to assess the diversity of N-glycosylation sites and N-glycans from biosimilar glycan drugs has been developed using two separate methods, LC-MS/MS and MALDI-TOF MS, respectively. Development of sensitive, accurate, and efficient methods for evaluation of glycoproteins is still needed. In this study, analysis of both N-glycosylation sites and N-glycans of glycoprotein was performed using the same LC-MS/MS with two different nano-LC columns, nano-C18 and nano-porous graphitized carbon (nano-PGC) columns. N-glycosylated proteins, including RNAse B (one N-glycosylation site), Fetuin (three sites), and ${\alpha}$-1 acid glycoprotein (four sites), were used, and small amounts of each protein were used for identification of N-glycosylation sites. In addition, high mannose N-glycans (one type of typical glycan structure), Mannose 5 and 9, eluted from RNAse B, were successfully identified using nano-PGC-LC MS/MS analysis, and the abundance of each glycan from the glycoprotein was calculated. This study demonstrated an accurate and efficient method for determination of N-glycosylation sites and N-glycans of glycoproteins based on high sensitive LC-MS/MS using two different nano-columns; this method could be applied for evaluation of the quality of various biosimilar drugs containing N-glycosylation groups.

AQuaKET 개괄 - 초대구경 나노정밀도 광학측정법 (AQuaKET Overview - A Nano-Accuracy Testing Method for Very Large Optics)

  • 김영수
    • 한국광학회:학술대회논문집
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    • 한국광학회 2002년도 하계학술발표회
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    • pp.24-25
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    • 2002
  • 밀레니움을 전후하여 세계적으로 8m급 초대형 망원경들이 만들어지고 있다. ESO (European Southern Observatory)의 VLT (Very Large Telescopes) 4기, 미국 영국 카나다 등의 연합 Gemini telescope 2기, 일본의 Subaru 1기 등, 10여기의 망원경들이 완성되었고, 차세대 망원경들이 50m급으로 디자인되고 있다. 우주망원경도 지름 2.4m인 허블 우주망원경(Nubble Space Telescope)의 뒤를 이어 6m급의 차세대 우주망원경 (Next Generation Space Telescope)이 개발되고 있어서 2010년경에 발사될 예정이다. (중략)

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차세대 나노소자에서의 물리적 논점 (Physical issues for the next generation of nano devices)

  • 조만호
    • 진공이야기
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    • 제1권3호
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    • pp.21-27
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    • 2014
  • Advanced process and integration for future semiconductor devices is approaching the physical limit. The new materials with low dimensional structure have recently attracted great attention due to its expandability for the future electronic devices. In order to apply the materials to future semiconductor devices, the control of carrier scattering is critical issue. That is, the carrier scattering with physical quantity in low dimensional structure significantly modulates the device characteristics. We introduce the role of defect in several future semiconductor materials and devices. The analysis of defect in the structure becomes the most important techniques. In particular, surface defect in nano structures totally controls the device characteristics. The changes imply that the metrology field is leading the future industry for semiconductor.

Poly Si Buffer-layer 도입에 의한 실리콘 양자점층 두께 증가에 따른 실리콘 양자점 태양전지 효율 향상

  • 백현정;박재희;김태운;김경중
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.354-354
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    • 2012
  • 실리콘 양자점 태양전지는 실리콘이 nm 크기의 양자점으로 될 경우 밴드갭이 증가하여 태양광 중의 가시광선을 광전변환에 활용함으로써 효율을 향상시키는 차세대 태양전지이다. 그러나 실리콘 양자점이 SiO2 매질 내에 분포하므로 양자점층의 두께가 증가할 경우 박막의 직렬저항이 증가하여 일정 두께 이상이 되면 효율이 감소하는 결과를 가져온다. 본 연구에서는 두께증가에 따른 효율저하 문제를 해결하기 위해 다결정 실리콘으로 이루어진 완충층을 도입 하였다. 이를 위해 본 연구에서는 두 가지 형태의 실리콘 양자점 태양전지를 제작하여 광전변환 특성을 비교하였다. 첫 번재 구조는 B이 도핑된 단일 실리콘 양자점층 태양전지이다. 양자점층은 2 nm SiOx 층과 2 nm SiO2 층을 적층한 후 $1,100^{\circ}C$에서 20분간 질소 분위기에서 급속 열처리하여 제작하였다. 실리콘 양자점 층의 두께를 40 nm에서 200 nm까지 변화시키면서 효율을 측정한 결과 100 nm 정도에서 효율이 감소하기 시작하였다. 이러한 효율감소는 양자점층의 저항 증가에 따른 전류감소에 의함이 확인되었다. 이와는 대조적으로 실리콘 양자점 층의 저항을 줄이기 위해 실리콘 양자점층 내에 50 nm 간격으로 10 nm 두께의 B이 도핑된 다결정 실리콘층을 배치하는 실리콘 양자점 태양전지를 개발하였다. 이러한 실리콘 양자점 층의 두께를 증가시킬 경우 효율이 지속적으로 증가함을 관찰하였다. 이러한 두 가지 형태의 양자점층을 이차이온질량분석법으로 분석한 결과 단일 실리콘 양자점층의 경우 두께가 약 70 nm 정도부터 이온빔 스퍼터링에 의한 저항증가에 따른 대전현상 (charging)이 관찰되었으나 다결정 실리콘 층이 배치된 실리콘 양자점층에서는 전혀 대전현상이 발생하지 않았다. 이는 다결정 실리콘 층이 캐리어를 이동시키는 매개체 역할을 하는 것으로 해석될 수 있다.

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미터 소급성을 갖는 원자간력 현미경을 이용한 1차원 격자 피치 측정과 불확도 평가 (Pitch Measurement of One-dimensional Gratings Using a Metrological Atomic Force Microscope and Uncertainty Evaluation)

  • 김종안;김재완;박병천;엄태봉;강주식
    • 한국정밀공학회지
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    • 제22권4호
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    • pp.84-91
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    • 2005
  • We measured the pitch of one-dimensional (ID) grating specimens using a metrological atomic force microscope (M-AFM). The ID grating specimens a.e often used as a magnification standard in nano-metrology, such as scanning probe microscopy (SPM) and scanning electron microscopy (SEM). Thus, we need to certify the pitch of grating specimens fur the meter-traceability in nano-metrology. To this end, an M-AFM was setup at KRISS. The M-AFM consists of a commercial AFM head module, a two-axis flexure hinge type nanoscanner with built-in capacitive sensors, and a two-axis heterodyne interferometer to establish the meter-traceability directly. Two kinds of ID grating specimens, each with the nominal pitch of 288 nm and 700 nm, were measured. The uncertainty in pitch measurement was evaluated according to Guide to the Expression of Uncertainty in Measurement. The pitch was calculated from 9 line scan profiles obtained at different positions with 100 ㎛ scan range. The expanded uncertainties (k = 2) in pitch measurement were 0.10 nm and 0.30 nm for the specimens with the nominal pitch of 288 nm and 700 nm. The measured pitch values were compared with those obtained using an optical diffractometer, and agreed within the range of the expanded uncertainty of pitch measurement. We also discussed the effect of averaging in the measurement of mean pitch using M-AFM and main components of uncertainty.