• 제목/요약/키워드: nano technology

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반구형 나노 패턴의 크기에 따른 PMMA기판의 광특성 평가 (Fabrication of nano-structured PMMA substrates for the improvement of the optical transmittance)

  • 박용민;신홍규;김병희;서영호
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2009년도 추계학술대회 논문집
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    • pp.217-220
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    • 2009
  • This paper presents fabrication method of nano-structured PMMA substrates as well as evaluations of their optical transmittance. For anti-reflective surface, surface coating method had been conventionally used. However, it requires high cost, complicated process and post-processing times. In this study, we suggested the fabrication method of anti-reflective surface by the hot embossing process. Using the nano patterned master fabricated by anodic aluminum oxidation process. Anodic aluminum oxide(AAO) is widely used as templates or a molds for various applications such as carbon nano tube (CNT), nano rod and nano dots. Anodic aluminum oxidation process provides highly ordered regular nano-structures on the large area, while conventional pattering methods such as E-beam and FIB can fabricate arbitrary nano-structures on small area. We fabricated a porous alumina hole array with various inter-pore distance and pore diameter. In order to replicate nano-structures using alumina nano hole array patterns, we have carried out hot-embossing process with PMMA substrates. Finally the nano-structured PMMA substrates were fabricated and their optical transmittances were measured in order to evaluate the charateristivs of anti-reflection. Anti-reflective structure can be applied to various displays and automobile components.

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Nano-technology after the year 2000

  • Ken Stout;Liam Blunt
    • 한국정밀공학회지
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    • 제13권4호
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    • pp.21-23
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    • 1996
  • Just as the transistor changed the face of electrical engineering and heralded the electronic and microprocessor era, a new technology, still in its infancy is likely to have an even larger impact on industry and society alike. This new technology which has already begun to make its impact on modern technology is called nano-technology. Nano-technology, derived from the Greek word, meaning - Dwarf, is related to the ability to manufacture, fabricate and measure in the nanometre precision range, which is 10$^{-9}$ parts of metre, a dimension which makes the diameter of a human hair appear huge by comparison.

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나노 산화아연을 사용한 수분산 폴리우레탄의 합성과 특성 (Synthesis and Characterization of Waterborne Polyurethane using Nano Zinc oxide)

  • 천정미;정부영;유종선;박덕제;천제환
    • 접착 및 계면
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    • 제9권4호
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    • pp.17-23
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    • 2008
  • 본 연구에서는 polyester polyol, 4,4-dicyclohexylmethane diisocyanate ($H_{12}MDI$), dimethylolpropionic acid (DMPA), ethylenediamine (EDA) 및 나노 ZnO (SUNZnO)를 사용하여 폴리우레탄/나노 ZnO를 합성하였다. 나노 ZnO를 고형분의 0~1.0 wt%로 프리폴리머 단계에서 첨가하고 또한, 이온성기를 함량별로 도입하여 폴리우레탄/나노 ZnO를 합성하여 열적 성질, 기계적 성질을 검토하였다. 나노 ZnO 함량별로 혼입하였을 때 유리전이온도는 뚜렷한 경향을 보이지 않고 이온성기 함량이 증가함에 따라 $T_g$는 다소 상승하는 결과를 보였으며, 나노 ZnO의 혼입량과 이온성기 함량이 증가함에 따라 인장강도와 100% 탄성률은 대체로 증가하고 파단신율은 감소하는 경향을 보였다.

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Characteristics of Si Nano-Crystal Memory

  • Kwangseok Han;Kim, Ilgweon;Hyungcheol Shin
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제1권1호
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    • pp.40-49
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    • 2001
  • We have developed a repeatable process of forming uniform, small-size and high-density self-assembled Si nano-crystals. The Si nano-crystals were fabricated in a conventional LPCVD (low pressure chemical vapor deposition) reactor at $620^{\circ}c$ for 15 sec. The nano-crystals were spherical shaped with about 4.5 nm in diameter and density of $5{\times}l0^{11}/$\textrm{cm}^2$. More uniform dots were fabricated on nitride film than on oxide film. To take advantage of the above-mentioned characteristics of nitride film while keeping the high interface quality between the tunneling dielectrics and the Si substrate, nitride-oxide tunneling dielectrics is proposed in n-channel device. For the first time, the single electron effect at room temperature, which shows a saturation of threshold voltage in a range of gate voltages with a periodicity of ${\Delta}V_{GS}\;{\approx}\;1.7{\;}V$, corresponding to single and multiple electron storage is reported. The feasibility of p-channel nano-crystal memory with thin oxide in direct tunneling regime is demonstrated. The programming mechanisms of p-channel nano-crystal memory were investigated by charge separation technique. For small gate programming voltage, hole tunneling component from inversion layer is dominant. However, valence band electron tunneling component from the valence band in the nano-crystal becomes dominant for large gate voltage. Finally, the comparison of retention between programmed holes and electrons shows that holes have longer retention time.

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입상의 이산화티타늄 박막을 이용한 수소센서 (Granular Thin Film of Titanium Dioxide for Hydrogen Gas Sensor)

  • 송혜진;오동훈;정진연;웬득화;조유석;김도진
    • 한국재료학회지
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    • 제19권6호
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    • pp.325-329
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    • 2009
  • Titanium dioxide thin films were fabricated as hydrogen sensors and its sensing properties were tested. The titanium was deposited on a $SiO_2$/Si substrate by the DC magnetron sputtering method and was oxidized at an optimized temperature of $850^{\circ}C$ in air. The titanium film originally had smooth surface morphology, but the film agglomerated to nano-size grains when the temperature reached oxidation temperature where it formed titanium oxide with a rutile structure. The oxide thin film formed by grains of tens of nanometers size also showed many short cracks and voids between the grains. The response to 1% hydrogen gas was ${\sim}2{\times}10^6$ at the optimum sensing temperature of $200^{\circ}C$, and ${\sim}10^3$ at room temperature. This extremely high sensitivity of the thin film to hydrogen was due partly to the porous structure of the nano-sized sensing particles. Other sensor properties were also examined.

나노 구조물을 이용한 전자선 차폐 가능성과 한계 조사 (Possibility & Limitation of 1D Nano Scale Electron Shielder)

  • 안성준;이범수;김종일
    • 방사성폐기물학회지
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    • 제5권2호
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    • pp.109-112
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    • 2007
  • 나노 규모의 1차원 양자 구조물을 이용한 전자선 차폐 가능성에 관한 이론적 배경과 한계를 정리한다. 나노 구조물을 이용한 전자선 차폐는 차폐재의 경량화와 소형화에 크게 기여할 것으로 예상되나, 실용화를 위해서는 아직 연구되어야 할 분야가 많다. 임의의 1차원 포텐셜 장벽을 대상으로 양자투과계수 계산을 실행하여, 나노 구조물의 전자선 차폐와 관련된 문제점들을 살펴본다.

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Direct Deposition of high quality nanocrystalline Silicon Films by Catalytic CVD at Low Temperatures (<200 K)

  • Kim, Tae-Hwan;Lee, Kyoung-Min;Hwang, Jae-Dam;Hong, Wan-Shick
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.261-263
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    • 2008
  • We attempted modulation of the hydrogen dilution ratio in a Cat-CVD system to achieve both the minimal incubation layer and the high throughput. We obtained the incubation layer thickness of 3 nm, and were able to grow a 200 nm-thick film having a 70 % crystallinity in 18 minutes.

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The Study of Nanocrystalline Silicon Bottom-gate Thin Film Transistor Fabricated at Low Temperature for Flexible Display

  • Lee, Youn-Jin;Lee, Kyoung-Min;Hwang, Jae-Dam;No, Kil-Sun;Yoon, Kap-Soo;Yang, Sung-Hoon;Hong, Wan-Shick
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.557-559
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    • 2009
  • We attempted modulation of hydrogen dilution ratio to achieve both the minimal incubation layer and high deposition rate. The incubation layer thickness was estimated by transmission electron microscopy (TEM) and crystallization fraction was measured by Raman spectroscopy.

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고성능 방사선 고분자 차단막 기술동향 (Trends of Technologies for High Performance Polymer Barriers against Radiation)

  • 이기쁨;박성은;김인우;정광운;이홍기;나창운
    • Elastomers and Composites
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    • 제46권2호
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    • pp.94-101
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    • 2011
  • 종래의 방사선 차단막은 납판이나 납 분말을 과량 배합하여 사용되고 있기 때문에 무거울 뿐만 아니라 인체중독의 위험성이 있다. 또한 작은 핀홀이 존재할 경우 방사선의 직접 투과 위험성이 있는 단점이 있다. 본 특집에서는 최근 선진국을 중심으로 연구가 활발한 다층구조의 고분자 방사선 차단막 기술에 대해 특허분석과 문헌고찰을 중심으로 소개한다. 특히 판상형 나노무기입자를 이용한 방사선 차단 및 내구성 향상에 대한 새로운 개념을 소개한다.