• Title/Summary/Keyword: nano technology

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'AMADEUS' Software for ion Beam Nano Patterning and Characteristics of Nano Fabrication ('아마데우스' 이온빔 나노 패터닝 소프트웨어와 나노 가공 특성)

  • Kim H.B.;Hobler G.;Lugstein A.;Bertagonolli E.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.10a
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    • pp.322-325
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    • 2005
  • The shrinking critical dimensions of modern technology place a heavy requirement on optimizing feature shapes at the micro- and nano scale. In addition, the use of ion beams in the nano-scale world is greatly increased by technology development. Especially, Focused ion Beam (FIB) has a great potential to fabricate the device in nano-scale. Nevertheless, FIB has several limitations, surface swelling in low ion dose regime, precipitation of incident ions, and the re-deposition effect due to the sputtered atoms. In recent years, many approaches and research results show that the re-deposition effect is the most outstanding effect to overcome or reduce in fabrication of micro and nano devices. A 2D string based simulation software AMADEUS-2D $(\underline{A}dvanced\;\underline{M}odeling\;and\;\underline{D}esign\;\underline{E}nvironment\;for\;\underline{S}putter\;Processes)$ for ion milling and FIB direct fabrication has been developed. It is capable of simulating ion beam sputtering and re-deposition. In this paper, the 2D FIB simulation is demonstrated and the characteristics of ion beam induced direct fabrication is analyzed according to various parameters. Several examples, single pixel, multi scan box region, and re-deposited sidewall formation, are given.

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Fabrication and sintering of nano $TiN_x$ and its composites (Nano $TiN_x$와 그 복합체의 제조 및 소결)

  • Kim, Dong-Sik;Kim, Sung-Jin;Rahno, Khamidova;Park, Sung-Bum;Park, Seung-Sik;Lee, Hye-Jeong;Lee, Sang-Woo;Cho, Kyeong-Sik;Woo, Heung-Sik;Ahn, Joong-Ho
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.16 no.3
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    • pp.101-105
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    • 2006
  • We fabricated the nano $TiN_x$ by making of reaction between titanium powder and $Si_3N_4$ during planetary milling. The $TiN_x$ powder was sintered by spark plasma sintering machine after mixing with 50 wt% of titanium powder, and the sintered body was heat-treated at $850^{\circ}C$ in order to investigate its hardness property at the elevated temperature. We analyzed crystal structure by XRD. We observed the peaks of $TiN_{0.26}$ and TiN after 10 hours milling, and we observed TiN peak mainly after 20 hours milling. The reacted particle size distribution was investigated by FE-SEM. Increase of milling time, the size of reacted particles was decreased and the $10{\sim}20nm$ size of $TiN_x$ on the surface of titanium and $TiN_x$ was observed after 20 hours milling. The micro-Vickers hardness of mixed sintered body was about $1050kgf/mm^2$.

Dry Etching of GaAs in a Planar Inductively Coupled BCl3 Plasma (BCl3 평판형 유도결합 플라즈마를 이용한 GaAs 건식식각)

  • Lim, Wan-tea;Baek, In-kyoo;Jung, Pil-gu;Lee, Je-won;Cho, Guan-Sik;Lee, Joo-In;Cho, Kuk-San;Pearton, S.J.
    • Korean Journal of Materials Research
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    • v.13 no.4
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    • pp.266-270
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    • 2003
  • We studied BCl$_3$ dry etching of GaAs in a planar inductively coupled plasma system. The investigated process parameters were planar ICP source power, chamber pressure, RIE chuck power and gas flow rate. The ICP source power was varied from 0 to 500 W. Chamber pressure, RIE chuck power and gas flow rate were controlled from 5 to 15 mTorr, 0 to 150 W and 10 to 40 sccm, respectively. We found that a process condition at 20 sccm $BCl_3$ 300 W ICP, 100 W RIE and 7.5 mTorr chamber pressure gave an excellent etch result. The etched GaAs feature depicted extremely smooth surface (RMS roughness < 1 nm), vertical sidewall, relatively fast etch rate (> $3000\AA$/min) and good selectivity to a photoresist (> 3 : 1). XPS study indicated a very clean surface of the material after dry etching of GaAs. We also noticed that our planar ICP source was successfully ignited both with and without RIE chuck power, which was generally not the case with a typical cylindrical ICP source, where assistance of RIE chuck power was required for turning on a plasma and maintaining it. It demonstrated that the planar ICP source could be a very versatile tool for advanced dry etching of damage-sensitive compound semiconductors.

Strength and durability study on cement mortar containing nano materials

  • Ashok, M.;Parande, A.K.;Jayabalan, P.
    • Advances in nano research
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    • v.5 no.2
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    • pp.99-111
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    • 2017
  • Nano particles have been gaining increasing attention and applied in many fields to fabricate new materials with novel functions due to their unique physical and chemical properties. In the present study two nano materials, namely nano silica (NS) and nano clay metakaolin (NMK) were partially replaced with ordinary Portland cement (OPC). The replacement level was varied from 0.5 to 2.0% in OPC and blended in cement mortar with a water cement ratio of 0.40. Mechanical property studies and durability experiments such as compressive strength, tensile strength, water absorption, depth of chloride penetration test. Nano silica was synthesized from rice husk ash and analyze the size using particle size analyzer. The results indicate that the compressive and tensile strength of the cement mortars containing nano materials were higher strength compared to the plain mortar with the same water cement ratio.