• 한국인쇄학회지
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• 제29권1호
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• pp.23-33
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• 2011

This experimental focus to characterize luminescence properties related to CNT (Carbon Nano Tube) element dispersedly implanted in ZnS-based phosphor thin film panel fabricated by a screen printing method. More specifically FE-SEM measurements, L-V(Luminescence vs. Voltage) and photo luminescence were carried out to determine an optimum value of CNT concentration and film thickness for the thin film structure of CNT-ZnS:(Cu, Al) by the screen printing method. We confirmed that an optimum value of CNT concentration in the ZnS:(Cu, Al) film panel is about 0.75 wt% resulting that the electric conductivity is 1.6 times higher than that of pure CNT sample and showing that the luminescence intensity is increasing until the optimum concentration. Clearly, CNT is presenting in the luminescence process providing a pathway for the creation of hot electron and a channel for the electron-hole recombination but overly inserted CNT may hinder to produce the hot electron for making an avalanching process. In case of the overly doped CNT 1.0 wt% in the ZnS-based phosphor, the luminescence intensity is decreasing although the electric conductivity is exponentially increasing. Based on these results, we realized that hot electron occurred by the external electric field or exciton arose by the external photon source are reduced dramatically over the critical value of CNT concentration because CNT element provide various isolated residues in the composites of ZnS based phosphor rather than pathway or channel for the D-A(Donnor to Acceptor) pair transition or the radiative recombination of electron-hole.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.174-175
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• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.440-441
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• 2007

For this study, terbium-doped yttrium aluminum garnet (YAG:Tb) phosphor powders were prepared via the combustion process using the varous reagents. The characteristics of the synthesized nano powder were investigated by means of X-ray diffraction (XRD), Scanning Electron Microscope(SEM), and photoluminescence (PL). Single-phase cubic YAG:Tb crystalline powder was obtained at $1000^{\circ}C$ by directly crystallizing it from amorphous materials, as determined by XRD techniques. The SEM image showed that the resulting YAG:Tb powders had uniform sizes and good homogeneity. The photoluminescence spectra of the YAG:Tb nanoparticles were investigated to determinethe energy level of electron transition related to luminescence processes. There were three peaks in the excited spectrum, and the major one was a broad band of around 274 nm. Also, the YAG:Tb nanoparticles showed two emission peaks in the range of 450~500 nm and 525~560 nm, respectively, and had maximum intensity at 545 nm.

• 한국분말재료학회지
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• 제19권6호
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• pp.442-445
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• 2012

The quantum dots (QD) have unique electrical and optical properties due to quantum dot confinement effect. The optical properties of QDs are decided by various synthesis conditions. In a prior QDs study, a study on the QDs size with synthesis condition such as synthesis time and temperature is being extensively researched. However, the research on QDs size with composition ratio has hitherto received scant attention. In order to evaluate the ratio dependence of CdSe crystal, synthesis ratio of Se precursor is changed from 16.7 mol%Se to 44 mol%Se. As the increasing Se ratio, the band gap was increased. This is caused by red shift of emission. We confirmed optical property of CdSe QDs with composition ratio.

• 한국세라믹학회지
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• 제45권7호
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• pp.401-404
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• 2008

Willemite ($Zn_2SiO_4$) are a wide range of applications such as a phosphor host and an important crystalline phase in glass ceramics, electrical insulators, glazes, and pigments. In this study, Willemite precursors were synthesized with zinc silicate gels from mixture of zinc nitrate solution and various sodium silicate solution by the geopolymer technique. To examine the crystallization behavior, precursors were have been monitored by the XRD. A pure willemite phase was obtained at $900^{\circ}C$. TEM investigations revealed that the sample with 50 nm particle size was obtained via heat-treated at $900^{\circ}C$ for W-3.

• 한국세라믹학회지
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• 제45권8호
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• pp.477-481
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• 2008

$Eu^{2+}$ and $Dy^{3+}$ co-doped strontium aluminate, $SrAl_2O_4$ long phosphorescent phoshor was fabricated and its photoluminescence was characterized. The phosphor, $SrAl_2O_4:Eu^{2+},Dy^{3+}$ was synthesized by a coprecipitation in which metal salts of $Sr(NO_3)_2$, $Al(NO_3)_3{\cdot}9H_2O$, were dissolved in $(NH_4)_2CO_3$ solution with adding $Eu(NO_3)_3{\cdot}5H_2O$ and $Dy(NO_3)_3{\cdot}5H_2O$ as a activator and co-activator, respectively. The coprecipitated products were separated from solution, washed, and dried in a vacuum dry oven. The dried powders were then mixed with 3 wt% $B_2O_3$ as a flux and heated at $800{\sim}1400^{\circ}C$ for 3 h under the reducing ambient atmosphere of 95%Ar+$5%H_2$ gases. For the synthesized $SrAl_2O_4:Eu^{2+},Dy^{3+}$, properties of photoluminescence such as emission, excitation and decay time were examined. The emission intensity increased as the annealing temperature increased and showed a maximum peak intensity at 510 nm with a broad band from $400{\sim}650\;nm$. Monitored at 520 nm, the excitation spectrum showed a maximum peak intensity at $315{\sim}320\;nm$ wavelength with a broad band from $200{\sim}500\;nm$ wavelength. The decay time of $SrAl_2O_4:Eu^{2+},Dy^{3+}$ increased as the annealing temperature increased.

• 한국재료학회지
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• 제27권10호
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• pp.534-543
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• 2017

$Gd_2O_3:Eu^{3+}$ red phosphors were prepared by template method from crystalline cellulose impregnated by metal salt. The crystallite size and photoluminescence(PL) property of $Gd_2O_3:Eu^{3+}$ red phosphors were controlled by varying the calcination temperature and $Eu^{3+}$ mol ratio. The nano dispersion of $Gd_2O_3:Eu^{3+}$ was also conducted with a bead mill wet process. Dependent on the time of bead milling, $Gd_2O_3:Eu^{3+}$ nanosol of around 100 nm (median particle size : $D_{50}$) was produced. As the bead milling process proceeded, the luminescent efficiency decreased due to the low crystallinity of the $Gd_2O_3:Eu^{3+}$ nanoparticles. In spite of the low PL property of $Gd_2O_3:Eu^{3+}$ nanosol, it was observed that the photoluminescent property was recovered after re-calcination. In addition, in the dispersed nanosol treated at $85^{\circ}C$, a self assembly phenomenon between particles appeared, and the particles changed from spherical to rod-shaped. These results indicate that particle growth occurs due to mutual assembly of $Gd(OH)_3$ particles, which is the hydration of $Gd_2O_3$ particles, in aqueous solvent at $85^{\circ}C$.

• 한국재료학회지
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• 제16권4호
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• pp.248-252
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• 2006

An investigation is reported on the coating of ZnS:Cu,Cl phosphors by $HfO_2$ using atomic layer deposition method. Hafnium oxide films were prepared at the chamber temperature of $280^{\circ}C$ using $Hf[N(CH_3)_2]_4\;and\;O_2$ as precursors and reactant gas, respectively. XPS and ICP-MS analysis showed the surface composition of coated phosphor powder was hafnium oxide. In FE-SEM analysis, the surface morphology of uncoated phosphors became smoother and clearer as the number of ALD cycle increased from 900 to 1800. The photoluminescence intensity for coated phosphors showed $7.3{\sim}13.4%$ higher than that of uncoated. The effect means that the reactive surface is uniformly coated with stable hafnium oxide to reduce the dead surface layer without change of bulk properties and also its absorptance is almost negligible due to ultrathin(nano-scaled) films. The growth rate is about $1.1{\AA}/cycle$.

• 한국방사선학회논문지
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• 제2권3호
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• pp.11-18
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• 2008

이 연구에서는 알코올과 증류수를 특정비율로 혼합한 특수용매를 사용하여 합성한 Gd2O3:Eu 나노 분말이 Europium(Eu)함량에 따라 어떤 입자특성과 발광특성을 가지게 되는지에 대하여 조사하였다. 액상법에 사용된 이 용매는 Gadolinium(Gd)과 Europium(Eu)의 용해되는 시간을 현저히 줄임으로써, 실험시간이 단축됨을 확인하였다. 이번 실험에서 Gd2O3:Eu 나노 powder 형광체의 입자특성은 SEM(scanning electron microscope)과 EDX(Energy Dispersive X-ray)를 사용하였으며, 나노 powder의 발광특성은 PL(Photoluminescence), CL(CathodeLuminescence)을 사용하여 측정하였다. 결정들은 30nm~40nm의 크기의 결정을 가졌고 발광특성은 약 620nm의 특정 파장에서 크게 반응함을 알 수 있었으며, Europium(Eu)함량이 1wt%에서 3wt%, 5wt%로 늘어날수록 Photon의 count가 증가하게 되어 발광효율이 증가함을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.191-191
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• 2012

InP quantum dot (QD) - organosilicon nanocomposites were synthesized and their photoluminescence quenching was mainly investigated because of their applicability to white LEDs (light emitting diodes). The as-synthesized InP QDs which were capped with myristic acid (MA) were incompatible with typical silicone encapsulants. Post ligand exchange the MA with a new ligand, 3-aminopropyldimethylsilane (APDMS), resulted in soluble InP QDs bearing Si-H groups on their surface (InP-APDMS) which allow embedding the QDs into vinyl-functionalized silicones through direct chemical bonding, overcoming the phase separation problem. However, the ligand exchange from MA to APDMS caused a significant decrease in the photoluminescent efficiency which is interpreted by ligand induced surface corrosion relying on theoretical calculations. The InP-APDMS QDs were cross-linked by 1,4-divinyltetramethylsilylethane (DVMSE) molecules via hydrosilylation reaction. As the InP-organosilicon nanocomposite grew, its UV-vis absorbance was increased and at the same time, the PL spectrum was red-shifted and, very interestingly, the PL was quenched gradually. Three PL quenching mechanisms are regarded as strong candidates for the PL quenching of the QD nano-composites, namely the scattering effect, Forster resonance energy transfer (FRET) and cross-linker tension preventing the QD's surface relaxation.