• 제목/요약/키워드: nano electron device

검색결과 115건 처리시간 0.028초

Nano-Granular Co-Fe-AI-O Soft Ferromagnetic Thin Films for GHz Magnetic Device Applications

  • Sohn, Jae-Cheon;Byun, Dong-Jin
    • 한국세라믹학회지
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    • 제43권3호
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    • pp.143-147
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    • 2006
  • Co-Fe-Al-O nanogranular thin films were fabricated by RF-magnetron sputtering under an $Ar+O_2$ atmosphere. High resolution transmission electron microscopy revealed that the Co-Fe-Al-O films are composed of bcc (Co, Fe) nanograins finer than 5 nm and an Al-O amorphous phase. A very large electrical resistivity of $374{\mu}{\Omega}cm$ was obtained, together with a large uniaxial anisotropy field of 50 Oe, a hard axis coercivity of 1.25 Oe, and a saturation magnetization of 12.9 kG. The actual part of the relative permeability was measured to be 260 at low frequencies and this value was maintained up to 1.3 GHz. The ferromagnetic resonance frequency was 2.24 GHz. The resulting Co-Fe-Al-O nanogranular thin films with a high electrical resistivity and high resonance frequency are considered to be suitable for GHz magnetic device applications.

Highly Efficient Phosphorescence Emitting Materials and Applications to Organic Light Emitting Diode

  • Sung, Lee-Bum;Yun, Jung-Sang;Nam, Byun-Ki;Sung, Yu-Han;Lee, Yoo-JIn;Kim, Sung-Hyun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1143-1146
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    • 2005
  • Novel series of electron-transporting hosts, pentavalent aluminum complexes containing 8 hydroxyquinoline ligands and various phenolato ligands were synthesized, and organic light-emitting diodes (OLEDs) were fabricated using these complexes as host materials of phosphorescent emitting device and the fabricated phosphorescent emitting device showed low driving voltage, high efficiency at high current density and good stability under conventional driving condition.

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Fabrication of Photo Sensitive Graphene Transistor Using Quantum Dot Coated Nano-Porous Graphene

  • 장야무진;이재현;최순형;임세윤;이종운;배윤경;황종승;황성우;황동목
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.658-658
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    • 2013
  • Graphene is an attractive material for various device applications due to great electrical properties and chemical properties. However, lack of band gap is significant hurdle of graphene for future electrical device applications. In the past few years, several methods have been attempted to open and tune a band gap of graphene. For example, researchers try to fabricate graphene nanoribbon (GNR) using various templates or unzip the carbon nanotubes itself. However, these methods generate small driving currents or transconductances because of the large amount of scattering source at edge of GNRs. At 2009, Bai et al. introduced graphene nanomesh (GNM) structures which can open the band gap of large area graphene at room temperature with high current. However, this method is complex and only small area is possible. For practical applications, it needs more simple and large scale process. Herein, we introduce a photosensitive graphene device fabrication using CdSe QD coated nano-porous graphene (NPG). In our experiment, NPG was fabricated by thin film anodic aluminum oxide (AAO) film as an etching mask. First of all, we transfer the AAO on the graphene. And then, we etch the graphene using O2 reactive ion etching (RIE). Finally, we fabricate graphene device thorough photolithography process. We can control the length of NPG neckwidth from AAO pore widening time and RIE etching time. And we can increase size of NPG as large as 2 $cm^2$. Thin CdSe QD layer was deposited by spin coatingprocess. We carried out NPG structure by using field emission scanning electron microscopy (FE-SEM). And device measurements were done by Keithley 4200 SCS with 532 nm laser beam (5 mW) irradiation.

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Spin Transport in a Ferromagnet/Semiconductor/Ferromagnet Structure: a Spin Transistor

  • Lee, W.Y;Bland, J.A.C
    • Journal of Magnetics
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    • 제7권1호
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    • pp.4-8
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    • 2002
  • The magnetoresistance (MR) and the magnetization reversal of a lateral spin-injection device based on a spin-polarized field effect transistor (spin FET) have been investigated. The device consists of a two-dimensional electron gas (2DEG) system in an InAs single quantum well (SQW) and two ferromagnetic $(Ni_{80}Fe_{20})$ contacts: all injector (source) and a detector (drain). Spin-polarized electrons are injected from the first contact and, after propagating through the InAs SQW are collected by the second contact. By engineering the shape of the permalloy contacts, we were able to observe distinct switching fields $(H_c)$ from the injector and the collector by using scanning Kerr microscopy and MR measurements. Magneto-optic Kerr effect (MOKE) hysteresis loops demonstrate that there is a range of magnetic field (20~60 Oe), at room temperature, over which the magnetization in one contact is aligned antiparallel to that in the other. The MOKE results are consistent with the variation of the magnetoresistance in the spin-injection device.

Cell Characteristics of a Multiple Alloy Nano-Dots Memory Structure

  • Kil, Gyu-Hyun;Lee, Gae-Hun;An, Ho-Joong;Song, Yun-Heup
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.240-240
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    • 2010
  • A multiple alloy metal nano-dots memory using FN tunneling was investigated in order to confirm its structural possibility for future flash memory. In this work, a multiple FePt nano-dots device with a high work function (~5.2 eV) and extremely high dot density (${\sim}\;1.2{\times}10^{13}/cm^2$) was fabricated. Its structural effect for multiple layers was evaluated and compared to one with a single layer in terms of the cell characteristics and reliability. We confirm that MOS capacitor structures with 2-4 multiple FePt nano-dot layers provide a larger threshold voltage window and better retention characteristics. Furthermore, it was also revealed that several process parameters for block oxide and inter-tunnel oxide between the nano-dot layers are very important to improve the efficiency of electron injection into multiple nano-dots. From these results, it is expected that a multiple FePt nano-dots memory using Fowler-Nordheim (FN)-tunneling could be a candidate structure for future flash memory.

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수열합성법으로 합성된 산화아연 나노 구조 박막의 광촉매적 응용 (Hydrothermally Synthesis Nanostructure ZnO Thin Film for Photocatalysis Application)

  • ;남민식;;전성찬
    • KEPCO Journal on Electric Power and Energy
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    • 제2권1호
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    • pp.97-101
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    • 2016
  • 산화아연은 다양한 나노 구조와 특유의 특성으로 인하여 여러 분야에서 많은 관심을 받고있는 물질이다. 산화아연을 합성하는 다양한 방법 중에서, 수열합성법은 간단하고 친환경적인 장점을 가지고 있다. 나노 구조를 가지는 산화아연 박막은 수열합성법을 통하여 FTO 전극 위에 제작되었다. 성장된 산화아연은 X-ray diffraction (XRD)와 Field-emission scanning electron microscopy (FESEM)을 통하여 분석되었다. XRD 분석에서 산화아연 박막이 자연상태의 hexagonal wurtzite 상으로 구성되어 있음을 확인하였으며 SEM 사진에서는 나노 로드 형태를 구성하고 있는 것을 확인할 수 있었다. 본 연구에서는 UV 영역의 흡수 스펙트럼을 분석하여 산화아연이 보이는 365 nm 파장에서의 흡수를 확인하였다. 또한 photoluminescence 방출을 분석한 결과, 424 nm의 band edge emission과 500 nm에서 산화아연의 oxygen vacancies에 의한 방출을 확인하였다. 또한 라만 스펙트럼 분석을 통하여 본 연구진이 제작한 산화아연이 높은 결정성을 가지고 있는 것을 확인할 수 있었다. 이러한 연구를 통하여 다양한 특성을 가진 산화아연의 광촉매적 적용을 기대할 수 있다.

유체 플라즈마 방식을 사용한 은 나노파티클의 합성 (Synthesis of Silver Nano-particles by the Solution Plasma Sputtering Method)

  • 유승철;신홍직;최원석
    • 전기학회논문지P
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    • 제65권3호
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    • pp.216-218
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    • 2016
  • In this study, we used not chemical and physical synthesis method but the solution plasma sputtering method in the synthesis of silver nano-particles. Synthesis of all the silver nano-particles was conducted for 1hour in 360 ml of distilled water and characteristics of changing the input voltage and frequency of the synthesised silver nano-particles by using the solution plasma sputtering method were analyzed through FE-SEM(Field Emission-Scanning Electron Microscope). We changed the input voltage from 8 kV to 10 kV in steps of 1 kV, input frequency from 20 kHz to 30 kHz in steps of 5 kHz in the solution plasma reactor with the advanced device which can control the DC voltage and frequency. We confirmed that the size of silver nano-particles were larger according to the change of the input voltage and frequency.

가공 및 측정이 가능한 복합나노가공시스템의 개발 (Development of a multi-functional nano-fabrication system for fabrication and measurement)

  • 장동영;박만진;김진현;한동철
    • 한국공작기계학회:학술대회논문집
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    • 한국공작기계학회 2004년도 춘계학술대회 논문집
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    • pp.466-471
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    • 2004
  • In focused-ion-beam (FIB) application of micromachining and device transplantation, four kinds of FIB processes, namely FIB sputtering, FIB-induced etching, redeposition, and FIB-induced deposition, are well utilized. As with FIB systems, scanning electron microscopes(SEMs) were extensively used in the semiconductor industry. They are the tools of choice for defect review and providing the image resolution needed for process monitoring. The enhanced capabilities of a dual-column on one chamber system are quickly becoming realized by the nano industry for performing a wide range of application.

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나노분말이 첨가된 변압기 절연유 제조 및 정적열전특성 평가 (Synthesis and Characterization of Transformer Oil containing Nanoparticles)

  • 송현우;최철;최경식;오제명
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.49-52
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    • 2004
  • New hydrophobic alumina nanoparticles were synthesized from alumina powders which were hydrophilic nano-agglomerates with diameters from ${\mu}m$ to mm by surface modification. The synthesized hydrophobic alumina nanoparticles which were retreated with Oleic acid were analyzed by Fourier transform infrared spectrophotometer and transmission electron microscopy. Then transformer oil containing surface-modified alumina naonparticles were synthesized. The synthesized hydrophobic alumina nanoparticles were well-dispersed in transformer oil. The coefficient of viscosity and dielectric strength of the Nano-transformer oil were investigated with viscometer and high voltage experiment device. In this study, the thermal conductivity of Nano-transformer oil was investigated to reduce the oil temperature of transformer by transient hot-wire method.

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Development of Polymeric Layer for Enhancing The Adhesion of Nano-devices Fabricated by The Nanotransfer Molding Method

  • 이기석;성명모
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.634-634
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    • 2013
  • Transfer molding methods have a problem that weak adhesion between nanostructures and substrates. It is important to make various nano scale applications, also the stability of nanostructure on substrate is related with device performance. We studied an effect of poly 4-vinylphenol (PVP) as the polymeric adhesion layer between organic nanowires and a Si substrate when the nanowires are transferred by liquid-bridge-mediated nanotransfer molding method (LB-nTM). Their structural stability was examined by optical microscopy, scanning electron microscopy as multiple transfer molding and washing process. Field-effect transistors were fabricated with organic semiconductor nanowires on a polymeric adhesion layer and their electrical properties showed no significant difference as the one without the adhesion layer. As a result, adhesion layer can be used in the washing process and making multi-layer nano-scale patterns.

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