• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1590-1592
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• 2007

In this study, we prepared CNF (carbon nanofiber) by the solvothermal method for FED (field emission display) applications. We controlled several conditions to synthesize effective CNF for field emission applications. Nano-sizesd Pt nanoparticles were coated on the CNF. In this study, we have applied Pt nanoparticles- coated CNF which can be produced in mass, to field emission application.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.517-518
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• 2006

Optically pumped THz emission has been observed in a wide range of semiconductors, and this process is an important practical source of pulsed THz radiation for time-domain THz spectroscopy and THz imaging. We show that InAs quantum dots on GaAs can be used to significantly enhance THz emission compared with a bare GaAs surface.

• Advances in nano research
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• 제3권1호
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• pp.39-47
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• 2015

We study a device structure which can be used to generate pure valley current and valley polarized current using quantum adiabatic pumping. The design of the structure allows the flexibility of changing the structure from one for pure valley current generation to one for valley polarized current generation by changing the applied electric potentials through changing the symmetry of the structure. The device is useful for the development of valleytronic devices.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1226-1227
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• 2008

In this study, a single p-type Si nanowire - Au nanoparticles nano floating gate memory (NFGM) device is successfully fabricated and characterized their memory effects by comparison of electrical characteristics of p-type Si nanowire-based field effect transistor (FET) devices with Au nanoparticles embedded in the $Al_2O_3$ gate materials and without the Au nanoparticles. Drain current versus gate voltage ($I_{DS}-V_{GS}$) characteristics of a single p-type Si nanowire - Au nanoparticle NFGM device show counterclockwise hysteresis loops with the threshold voltage shift of ${\Delta}V_{th}$= 3.0 V. However, p-type Si nanowire based top-gate device without Au nanoparticles does not exhibit a threshold voltage shift. This behavior is ascribed to the presence of the Au nanoparticles, and is indicative of the trapping and emission of electrons in the Au nanoparticles.

• 산업기술연구
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• 제25권B호
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• pp.127-133
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• 2005

Manufacturing methods of Nano particles can be distinguished by top-down technology as physical method and bottom-up technology as chemical synthetic method. Top-down technology is a kind of method for making microstructure as like carving after forming a macroscopic structure in advance and its typical methods are ball milling, gas condensation method and so on. Nano Particles synthesized by bottom-up method have got to do dispersing process for using them as actual nano particles because their viscosity are very strong and so easy to shape cohesive substances. Therefore, this study is about a particle separating device which separates a certain constant size of grains processed already in mill and mixer because we mostly use media agitating mill as a device of milling and dispersing and we necessarily use very slight balls as media for manufacturing nano particles in the machine. The centrifugal device has been designed for passing and separating below a certain type of grain size after final process of particles in the mill.

• Journal of Magnetics
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• 제12권1호
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• pp.12-16
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• 2007

Magnetic excitation and reversal by a spin polarized current via spin transfer have been a central research topic in spintronics due to its application potential. Special techniques are required to fabricate nano-scale magnetic layers in which the effect can be observed and studied. This work discusses the possibility of using electron-beam resists, the nano-scale patterning media, as ion milling mask in a subtractive fabrication method. The possibility is demonstrated by two resists, one positive tone, the ZEP 520A, and one negative tone, the ma-N2403. The advantage and the key points for success of this process will be also addressed.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 추계학술대회 논문집
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• pp.665-666
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• 2006

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1034-1037
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• 2004

In this paper we fabricated a test panel for AMOLED on glass and PET substrate. The test panel consisted of the various size of OTFTs and OLEDs and the current driving capability of OTFTs for OLEDs has been investigated. OTFTs were made of the inverted staggered structure and employed polyvinylphenol (PVP) as the gate insulator and pentacene thin film as the active layer. The OTFTs produced the filed effect mobility of 0.3$cm^2$/V.sec and on/off current ratio of $10^5$. OLEDs consisted of TPD for HTL and Alq3 for EML with 35nm thick, generating green monochrome light. We found that OTFT with channel length of 70${\mu}m$and channel width of over 3.5mm provided the sufficient current to OLED to generate the luminescence of 0.3Cd/$m^2$.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권2호
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• pp.94-99
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• 2004

silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is $120{\mu}A/{\mu}m$ and on/off-current ratio is higher than $10^5$ with low leakage current less than $10{\mu}A/{\mu}m$. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length SB-MOSFETs is predicted. The results show that the subthreshold swing value can be lower than 60 mV/decade.

• 한국산학기술학회논문지
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• 제12권12호
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• pp.5393-5397
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• 2011

본 연구는 나노튜브 제조시스템의 주요 구성요소인 압축-절단 장치가 안전한 성능을 발휘할 수 있도록 설계하는데 목적이 있다. 나노튜브의 제조에 있어서 가장 중요한 핵심기술은 튜브에 나노물질을 주입한 후 압력을 가하여 안전하게 봉합하고 전단분리 하는 것이다. 이 때 작용하는 압력과 속도가 나노튜브의 품질을 결정한다. 본 연구에서는 DC서보모터에 의하여 구동되는 압축-절단 장치의 구동력을 설계하고 이를 바탕으로 시스템을 제작한 후 시제품을 생산하는 과정을 보이고자 한다.