• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.141-141
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• 2010

The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

• Nuclear Engineering and Technology
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• v.53 no.8
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• pp.2629-2639
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• 2021

Within the frame of the EMPIrE test, four monolithic mini-plates were irradiated in the ATR reactor. In two of them, the monolithic U(Mo) foil had been PVD-coated with Zr before the plate manufacturing. Extensive microstructural characterizations were performed on a fresh archive mini-plate, using Optical Microscopy (OM), Scanning Electron Microscopy (SEM) combined with Energy Dispersive Spectroscopy (EDS), Electron Backscattered Diffraction (EBSD) and Focused Ion Beam (FIB)/Transmission Electron Microscopy (TEM) with nano EDS. A particular attention was paid to the examination of the U(Mo) foil, the PVD coating, the cladding/Zr and Zr/U(Mo) interfaces. The Zr coating has a thickness around 15 ㎛. It has a columnar microstructure and appears dense. The cohesion of the cladding/Zr and Zr/U(Mo) interfaces seems to be satisfactory. An almost continuous layer with a thickness of the order of 100-300 nm is present at the cladding/Zr interface and corresponds to an oxidized part of the Zr coating. At the Zr/U(Mo) interface, a thin discontinuous layer is observed. It could correspond to locally oxidized U(Mo). This work provides a basis for interpreting the results of characterizations on EMPIrE irradiated plates.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.321-328
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• 2011

The 30 nm-thick Ni layers was deposited on a flexible polyimide substrate with an e-beam evaporation. Subsequently, we deposited a Si layer using a catalytic CVD (Cat-CVD) in a hydride amorphous silicon (${\alpha}$-Si:H) process of $T_{s}=180^{\circ}C$ with varying thicknesses of 55, 75, 145, and 220 nm. The sheet resistance, phase, degree of the crystallization, microstructure, composition, and surface roughness were measured by a four-point probe, HRXRD, micro-Raman spectroscopy, FE-SEM, TEM, AES, and SPM. We confirmed that our newly proposed Cat-CVD process simultaneously formed both NiSi and crystallized Si without additional annealing. The NiSi showed low sheet resistance of < $13{\Omega}$□, while carbon (C) diffused from the substrate led the resistance fluctuation with silicon deposition thickness. HRXRD and micro-Raman analysis also supported the existence of NiSi and crystallized (>66%) Si layers. TEM analysis showed uniform NiSi and silicon layers, and the thickness of the NiSi increased as Si deposition time increased. Based on the AES depth profiling, we confirmed that the carbon from the polyimide substrate diffused into the NiSi and Si layers during the Cat-CVD, which caused a pile-up of C at the interface. This carbon diffusion might lessen NiSi formation and increase the resistance of the NiSi.

• Journal of Radiation Protection and Research
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• v.47 no.3
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• pp.134-142
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• 2022

Background: This study investigated the characteristics of optically stimulated luminescence dosimeters (OSLDs) with fully filled deep electron/hole traps in the kV energy ranges. Materials and Methods: The experimental group consisted of InLight nanoDots, whose deep electron/hole traps were fully filled with 5 kGy pre-irradiation (OSLD_exp), whereas the non-pre-irradiated OSLDs were arranged as a control group (OSLD_cont). Absorbed doses for 75, 80, 85, 90, 95, 100, and 105 kVp with 200 mA and 40 ms were measured and defined as the unit doses for each energy value. A bleaching device equipped with a 520-nm long-pass filter was used, and the strong beam mode was used to read out signal counts. The characteristics were investigated in terms of fading, dose sensitivities according to the accumulated doses, and dose linearity. Results and Discussion: In OSLD_exp, the average normalized counts (sensitivities) were 12.7%, 14.0%, 15.0%, 10.2%, 18.0%, 17.9%, and 17.3% higher compared with those in OSLD_cont for 75, 80, 90, 95, 100, and 105 kVp, respectively. The dose accumulation and bleaching time did not significantly alter the sensitivity, regardless of the filling of deep traps for all radiation qualities. Both OSLD_exp and OSLD_cont exhibited good linearity, by showing coefficients determination (R²) > 0.99. The OSL sensitivities can be increased by filling of deep electron/hole traps in the energy ranges between 75 and 105 kVp, and they exhibited no significant variations according to the bleaching time.

• Advances in nano research
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• v.11 no.6
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• pp.581-593
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• 2021

This model is proposed to describe the buckling behavior of Carbon Nanotubes (CNTs) embedded in an elastic medium taking into account the combined effects of the magnetic field, the temperature, the nonlocal parameter, the number of walls. Using Eringen's nonlocal elasticity theory, thin cylindrical shell theory and Van der Waal force (VdW) interactions, we develop a system of partial differential equations governing the buckling response of CNTs embedded on Winkler, Pasternak, and Kerr foundations in a thermal-magnetic environment. The pre-buckling stresses are obtained by applying airy's stress function and an adjacent equilibrium criterion. To estimate the nonlocal critical buckling load of CNTs under the simultaneous effects of the magnetic field, the temperature change, and the number of walls, an optimization technique is proposed. Furthermore, analytical formulas are developed to obtain the buckling behavior of SWCNTs embedded in an elastic medium without taking into account the effects of the nonlocal parameter. These formulas take into account VdW interactions between adjacent tubes and the effect of terms involving differences in tube radii generally neglected in the derived expressions of the critical buckling load published in the literature. Most scientific research on modeling the effects of magnetic fields is based on beam theories, this motivation pushes me to develop a cylindrical shell model for studying the effect of the magnetic field on the static behavior of CNTs. The results show that the magnetic field has significant effects on the static behavior of CNTs and can lead to slow buckling. On the other hand, thermal effects reduce the critical buckling load. The findings in this work can help us design of CNTs for various applications (e.g. structural, electrical, mechanical and biological applications) in a thermal and magnetic environment.

• Advances in aircraft and spacecraft science
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• v.10 no.1
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• pp.51-65
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• 2023

In this paper, the effect of deepness on in-plane free vibration behavior of a curved functionally graded (FG) nanobeam based on nonlocal elasticity theory has been investigated. Differential equations and boundary conditions have been developed based on Hamilton's principle. In order to figure out the size effect, nonlocal theory has been adopted. Properties of material vary in radial direction. By using Navier solution technique, the amount of natural frequencies has been obtained. Also, to take into account the deepness effect on vibrations, thickness to radius ratio has been considered. Differences percentage between results of cases in which deepness effect is included and excluded are obtained and influences of power-law exponent, nonlocal parameter and arc angle on these differences percentage are studied. Results show that arc angle and power law exponent parameters have the most influences on the amount of the differences percentage due to deepness effect. It has been observed that the inclusion of geometrical deep term and material distribution results in an increase in sensitivity of dimensionless natural frequency about variation of aforementioned parameters and a change in variation range of natural frequency. Finally, several numerical results of deep and shallow curved functionally graded nanobeams with different geometry dimensions are presented, which may serve as benchmark solutions for the future research in this field.

• Composites Research
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• v.36 no.5
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• pp.377-382
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• 2023

To enhance the performance of graphene-based devices, it is of great importance to better understand the interfacial interaction of graphene with its underlying substrates. In this study, the adhesion energy of monolayer graphene placed on dielectric substrates was characterized using mode I fracture tests. Large-area monolayer graphene was synthesized on copper foil using chemical vapor deposition (CVD) with methane and hydrogen. The synthesized graphene was placed on target dielectric substrates using polymer-assisted wet transfer technique. The monolayer graphene placed on a substrate was mechanically delaminated from the dielectric substrate by mode I fracture tests using double cantilever beam configuration. The obtained force-displacement curves were analyzed to estimate the adhesion energies, showing 1.13 ± 0.12 J/m² for silicon dioxide and 2.90 ± 0.08 J/m² for silicon nitride. This work provides the quantitative measurement of the interfacial interactions of CVD-grown graphene with dielectric substrates.

• Advanced Industrial SCIence
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• v.2 no.4
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• pp.28-35
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• 2023

In this paper, a diffractive optical element was designed to create lighting patterns that satisfy the requirements of adaptive headlight systems for normal road mode, highway mode, and wet road mode, and this was rendered into a GDSII stream format file.To verify the effectiveness of the light distribution formed by the diffractive optical elements and the realization of white light, simulations based on Field Tracing and Ray Tracing were conducted, confirming the satisfaction of position and luminance requirements at the transformation beam measurement points. Based on this research, it is anticipated that the implementation of adaptive headlights would be possible, enabling the reproduction of luminance contrast and the creation of a simple-structured adaptive headlight system.

• Nanomaterials
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• v.12 no.5
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• pp.827-838
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• 2022

Controlling the Schottky barrier height (φ_B) and other parameters of Schottky barrier diodes (SBD) is critical for many applications. In this work, the effect of inserting a graphene interfacial monolayer between a Ni Schottky metal and a β-Ga₂O₃ semiconductor was investigated using numerical simulation. We confirmed that the simulation-based on Ni workfunction, interfacial trap concentration, and surface electron affinity was well-matched with the actual device characterization. Insertion of the graphene layer achieved a remarkable decrease in the barrier height (φ_B), from 1.32 to 0.43 eV, and in the series resistance (R_s), from 60.3 to 2.90 mΩ.cm². However, the saturation current (J_s) increased from 1.26×10^-11 to 8.3×10^-7(A/cm²). The effects of a graphene bandgap and workfunction were studied. With an increase in the graphene workfunction and bandgap, the Schottky barrier height and series resistance increased and the saturation current decreased. This behavior was related to the tunneling rate variations in the graphene layer. Therefore, control of Schottky barrier diode output parameters was achieved by monitoring the tunneling rate in the graphene layer (through the control of the bandgap) and by controlling the Schottky barrier height according to the Schottky-Mott role (through the control of the workfunction). Furthermore, a zero-bandgap and low-workfunction graphene layer behaves as an ohmic contact, which is in agreement with published results.

• The Journal of Korean Society for Radiation Therapy
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• v.22 no.2
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• pp.123-129
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• 2010

Purpose: The purpose of this study was to evaluate dosimetric characteristics of Optically stimulated luminescent dosimeters (OSLD) for dosimetry Materials and Methods: InLight/OSL $NanoDot^{TM}$ dosimeters was used including $Inlight^{TM}MicroStar$ Reader, Solid Water Phantom, and Linear accelerator ($TRYLOGY^{(R)}$) OSLDs were placed at a Dmax in a solid water phantom and were irradiated with 100 cGy of 6 MV X-rays. Most irradiations were carried out using an SSD set up 100 cm, $10{\times}10\;cm^2$ field and 300 MU/min. The time dependence were measured at 10 minute intervals. The dose dependence were measured from 50 cGy to 600 cGy. The energy dependence was measured for nominal photon beam energies of 6, 15 MV and electron beam energies of 4-20 MeV. The dose rate dependence were also measured for dose rates of 100-1,000 MU/min. Finally, the PDD was measured by OSLDs and Ion-chamber. Results: The reproducibility of OSLD according to the Time flow was evaluated within ${\pm}2.5%$. The result of Linearity of OSLD, the dose was increased linearly up to about the 300 cGy and increased supralinearly above the 300 cGy. Energy and dose rate dependence of the response of OSL detectors were evaluated within ${\pm}2%$ and ${\pm}3%$. $PDD_{10}$ and PDD20 which were measured by OSLD was 66.7%, 38.4% and $PDD_{10}$ and $PDD_{20}$ which were measured by Ion-chamber was 66.6%, 38.3% Conclusion: As a result of analyzing characteration of OSLD, OSLD was evaluated within ${\pm}3%$ according to the change of the time, enregy and dose rate. The $PDD_{10}$ and $PDD_{20}$ are measured by OSLD and ion-chamber were evaluated within 0.3%. The OSL response is linear with a dose in the range 50~300 cGy. It was possible to repeat measurement many times and progress of the measurement of reading is easy. So the stability of the system and linear dose response relationship make it a good for dosimetry.