• Structural Engineering and Mechanics
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• v.65 no.1
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• pp.33-41
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• 2018

In this paper, using modified couple stress theory in place of classical continuum theory, and using shell model in place of beam model, vibrational behavior of nanotubes is investigated via the finite element method. Accordingly classical continuum theory is unable to correctly compute stiffness and account for size effects in micro/nanostructures, higher order continuum theories such as modified couple stress theory have taken on great appeal. In the present work the mass-stiffness matrix for cylindrical shell element is developed, and by means of size-dependent finite element formulation is extended to more precisely account for nanotube vibration. In addition to modified couple stress cylindrical shell element, the classical cylindrical shell element can also be defined by setting length scale parameter to zero in the equations. The boundary condition were assumed simply supported at both ends and it is shown that the natural frequency of nano-scale shell using the modified coupled stress theory is larger than that using the classical shell theory and the results of Ansys. The results have indicated using the modified couple stress cylindrical shell element, the rigidity of the nano-shell is greater than that in the classical continuum theory, which results in increase in natural frequencies. Besides, in addition to reducing the number of elements required, the use of this type of element also increases convergence speed and accuracy.

• Smart Structures and Systems
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• v.18 no.5
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• pp.1029-1062
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• 2016

In this research, the nonlinear free vibration analysis of boron-nitride micro ribbon (BNMR) on the Pasternak elastic foundation under electrical, mechanical and thermal loadings using modified strain gradient theory (MSGT) is studied. Employing the von $K{\acute{a}}rm{\acute{a}}n$ nonlinear geometry theory, the nonlinear equations of motion for the graphene micro ribbon (GMR) using Euler-Bernoulli beam model with considering attached mass and size effects based on Hamilton's principle is obtained. These equations are converted into the nonlinear ordinary differential equations by elimination of the time variable using Kantorovich time-averaging method. To determine nonlinear frequency of GMR under various boundary conditions, and considering mass effect, differential quadrature element method (DQEM) is used. Based on modified strain MSGT, the results of the current model are compared with the obtained results by classical and modified couple stress theories (CT and MCST). Furthermore, the effect of various parameters such as material length scale parameter, attached mass, temperature change, piezoelectric coefficient, two parameters of elastic foundations on the natural frequencies of BNMR is investigated. The results show that for all boundary conditions, by increasing the mass intensity in a fixed position, the linear and nonlinear natural frequency of the GMR reduces. In addition, with increasing of material length scale parameter, the frequency ratio decreases. This results can be used to design and control nano/micro devices and nano electronics to avoid resonance phenomenon.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.318.1-318.1
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• 2014

Metal nano-crystals have been received much attentions owing to their excellent catalytic property and surface plasmon effect. In the last decade, many studies on synthesizing well-dispersive nanoparticles and on understanding their distinct physical properties have been performed. There were tremendous reports revealing the electrochemical activities and enhancement of surface plasmonic effect were dependent mainly on the size, shape, and composition. So far, most fabrication methods have been based on vacuum based deposition techniques, such as chemical vapor deposition and electron-beam evaporation, and then annealed them to transform into the nanoparticles. Recently, there were several reports regarding to the photoinduced nano-crystal synthesis as an effective way to produce the metal nanoparticles. In this study, we report synchrotron x-ray mediated synthesis of Au nanoparticles on ZnO nanowires. ZnO nanowires were fabricated by hydrothermal method, and then they were dip into a solution having Au clusters. Detailed structural evolution of Au nanoparticles was investigated using scanning electron microscopy and photoluminescence measurements. The results on formation of well-dispersive Au nanoparticles on ZnO nanowires will be presented.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.172-172
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• 2010

$MgB_2$ doped with $TiO_2$ was prepared by the in-situ solid state reaction to study the effects of $TiO_2$ dopant on the flux pinning behavior of $MgB_2$ superconductor. From the field-cooled and the zero-field-cooled temperature dependences of magnetization, the realms of vortex-glass and vortex-liquid states of $TiO_2$-doped $MgB_2$ were determined in the H-T diagram (the temperature dependence of upper critical magnetic field and irreversibility line). The critical current density was estimated from the width of hysteresis loops in the framework of Beam's model at different temperatures. The results indicate that nano-scale $TiO_2$ inclusions play a role of the effective pinning centers and lead to the enhanced upper critical field and critical current density. It is suggested that the grain-boundary pinning mechanism is realized in $TiO_2$-doped $MgB_2$ superconductor.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.198-198
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• 2012

Graphene has been the subject of intense study in recent years owing to its good optoelectronic properties, possibility for stretchable electronics, and so on. Especially, many research groups have studied about graphene nanostructures with various sizes and shapes. Graphene needs to be fabricated into useful devices with controllable electrical properties for its successful device applications. However, this been far from satisfaction owing to a lack of reliable pattern transfer techniques. Photolithography, nanowire etching, and electron beam lithography methods are commonly used for construction of graphene patterns, but those techniques have limitations for getting controllable GNRs. We have developed a novel nanoscale pattern transfer technique based on an electro-hydrodynamic lithography providing highly scalable versatile pattern transfer technique viable for industrial applications. This technique was exploited to fabricate nanoscale patterned graphene structures in a predetermined shape on a substrate. FE-SEM, AFM, and Raman microscopy were used to characterize the patterned graphene structures. This technique may present a very reliable high resolution pattern transfer technique suitable for graphene device applications and can be extended to other inorganic materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.15-15
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• 2011

Atom-thick graphene membrane and nano-sized graphene objects (NGOs) hold substantial potential for applications in future molecular-scale integrated electronics, transparent conducting membranes, nanocomposites, etc. To realize this potential, chemical properties of graphene need to be understood and diagnostic methods for various NGOs are also required. To meet these needs, chemical properties of graphene and optical diagnostics of graphene nanoribbons (GNRs) have been explored by Raman spectroscopy, AFM and STM scanning probes. The first part of the talk will illustrate the role of underlying silicon dioxide substrates and ambient gases in the ubiquitous hole doping of graphene. An STM study reveals that thermal annealing generates out-of-plane deformation of nanometer-scale wavelength and distortion in $sp^2$ bonding on an atomic scale. Graphene deformed by annealing is found to be chemically active enough to bind molecular oxygen, which leads to a strong hole-doping. The talk will also introduce Raman spectroscopy studies of GNRs which are known to have nonzero electronic bandgap due to confinement effect. GNRs of width ranging from 15 nm to 100 nm have been prepared by e-beam lithographic patterning of mechanically exfoliated graphene followed by oxygen plasma etching. Raman spectra of narrow GNRs can be characterized by upshifted G band and strong disorder-related D band originating from scattering at ribbon edges. Detailed analysis of the G, D, and 2D bands of GNRs proves that Raman spectroscopy is still a reliable tool in characterizing GNRs despite their nanometer width.

• Korean Journal of Materials Research
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• v.14 no.6
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• pp.413-419
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• 2004

Recently, Silicon On Insulator (SOI) devices emerged to achieve better device characteristics such as higher operation speed, lower power consumption and latch-up immunity. Nevertheless, there are many detrimental defects in SOI wafers such as hydrofluoric-acid (HF)-defects, pinhole, islands, threading dislocations (TD), pyramid stacking faults (PSF), and surface roughness originating from quality of buried oxide film layer. Although the number of defects in SOI wafers has been greatly reduced over the past decade, the turn over of high-speed microprocessors using SOI wafers has been delayed because of unknown defects in SOI wafers. A new characterization method is proposed to investigate the crystalline quality, the buried oxide integrity and some electrical parameters of bonded SOI wafers. In this study, major surface defects in bonded SOI are reviewed using HF dipping, Secco etching, Cu-decoration followed by focused ion beam (FIB) and transmission electron microscope (TEM).

• Applied Microscopy
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• v.41 no.2
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• pp.89-98
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• 2011

Atom Probe Tomography (APT) can provide 3-dimensional information such as position and chemical composition with atomic resolution. Despite the ability of this technique, APT could not be applied for poor conductive materials such as semiconductor. Recently APT has dramatically developed by applying the laser pulsing and combining with Focused Ion Beam (FIB). The invention and combination of these techniques make possible site-specific sample preparation and permit the investigation of various materials including insulators. In this paper, we introduced the recently achieved state of the art applications of APT focusing on Si based FET devices, LED devices, low dimensional materials.

• Applied Microscopy
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• v.41 no.2
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• pp.81-88
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• 2011

Even though importance of nano-scale structure and compositional analysis have been getting increased, existing analysis tools have been reached to their limitations. Recent development of Atom Probe Tomography (APT), providing 3-dimensional elemental distribution and compositional information with sub-nm scale special resolution and tens of ppm detection limit, is one of key technique which can overcome these limitations. However, due to the fact that APT is not well known yet in the domestic research area, it has been rarely utilized so far. Therefore, in this article, the theoretical background of APT was briefly introduced with sample preparation to help understanding APT analysis.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 2007.04a
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• pp.427-432
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• 2007

In general, the response of bulk material is independent of its size when it comes to considering classical elasticity theory. Because the surface to bulk ratio of the large solids is very small, the influence of surface can be negligible. But the surface effect plays important role as the surface to bulk ratio becomes larger, that is, the contribution of the surface effect must be considered in nano-size elements such as thin film or beam structure. Molecular dynamics computation has been a conventional way to analyze these ultra-thin structures but this method is limited to simulate on the order of $10^6-10^8$ atoms for a few nanoseconds, and besides, very time consuming. Analysis of structures in submicro to micro range(thin-film, wire etc.) is difficult with classical molecular dynamics due to the restriction of computing resources and time. Therefore, in this paper, the continuum-based method is considered to simulate the overall physical and mechanical properties of the structures in nano-scale, especially, for the thin-film.