• Title/Summary/Keyword: nano beam

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Enhancement of light extraction efficiency in vertical light-emitting diodes with MgO nano-pyramids structure

  • Son, Jun-Ho;Yu, Hak-Ki;Lee, Jong-Lam
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.03a
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    • pp.16-16
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    • 2010
  • GaN-based light-emitting diodes (LEDs) are attracting great interest as candidates for next-generation solid-state lighting, because of their long lifetime, small size, high efficacy, and low energy consumption. However, for general illumination applications, the external quantum efficiency of LEDs, determined by the internal quantum efficiency (IQE) and the light extraction efficiency, must be further increased. The IQE is determined by crystal quality and epitaxial layer structure and high value of IQE more than 70% for blue LEDs have been already reported. However, there is much room for improvement of light extraction efficiency because most of the generated photons from active layer remain inside LEDs by total internal reflection at the interface of semiconductor with air due to the high refractive index difference between LEDs epilayer (for GaN, n=2.5) and air (n=1). The light confining in LEDs will be reabsorbed by the metal electrode or active layer, reducing the efficacy of LEDs. Here, we present the first demonstration of enhanced light extraction by forming a MgO nano-pyramids structure on the surface of vertical-LEDs. The MgO nano-pyramids structure was successfully fabricated at room temperature using conventional electron-beam evaporation without any additional process. The nano-sized pyramids of MgO are formed on the surface during growth due to anisotropic characteristics between (111) and (200) plane of MgO. The ZnO layer with quarter-wavelength in thickness is inserted between GaN and MgO layers to increase the critical angle for total internal reflection, because the refractive index of ZnO (n=1.94) could be matched between GaN (n=2.5) and MgO (n=1.73). The MgO nano-pyramids structure and ZnO refractive-index modulation layer enhanced the light extraction efficiency ofV-LEDs with by 49%, comparing with the V-LEDs with a flat n-GaN surface. The angular-dependent emission intensity shows the enhanced light extraction through the side walls of V-LEDs as well as through the top surface of the n-GaN, because of the increase in critical angle for total internal reflection as well as light scattering at the MgO nano-pyramids surface.

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Effect of SPR Chip with Nano-structured Surface on Sensitivity in SPR Sensor (나노형상을 가진 표면플라즈몬공명 센서칩의 감도 개선 효과)

  • Cho, Yong-Jin;Kim, Chul-Jin;Kim, Namsoo;Kim, Chong-Tai;Kim, Tae-Eun;Kim, Hyo-Sop;Kim, Jae-Ho
    • Food Engineering Progress
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    • v.14 no.1
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    • pp.49-53
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    • 2010
  • Surface plasmon resonance (SPR) which is utilized in thin film refractometry-based sensors has been concerned on measurement of physical, chemical and biological quantities because of its high sensitivity and label-free feature. In this paper, an application of SPR to detection of alcohol content in wine and liquor was investigated. The result showed that SPR sensor had high potential to evaluate alcohol content. Nevertheless, food industry may need SPR sensor with higher sensitivity. Herein, we introduced a nano-technique into fabrication of SPR chip to enhance SPR sensitivity. Using Langmuir-Blodgett (LB) method, gold film with nano-structured surface was devised. In order to make a new SPR chip, firstly, a single layer of nano-scaled silica particles adhered to plain surface of gold film. Thereafter, gold was deposited on the template by an e-beam evaporator. Finally, the nano-structured surface with basin-like shape was obtained after removing the silica particles by sonication. In this study, two types of silica particles, or 130 nm and 300 nm, were used as template beads and sensitivity of the new SPR chip was tested with ethanol solution, respectively. Applying the new developed SPR sensor to a model food of alcoholic beverage, the sensitivity showed improvement of 95% over the conventional one.

Phase Change Characteristics of Ge-Se-Te Thin Film for PRAM (PRAM을 위한 Ge-Se-Te 박막의 상변환 특성)

  • Shin, Jae-Ho;Kim, Byung-Cheul;Yeo, Jong-Bin;Lee, Hyun-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.12
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    • pp.982-987
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    • 2011
  • In this study, $Ge_8Se_{(2+x)}Te_{(6-x)}$ thin film amorphous-to-crystalline phase-change rate was evaluated in using a nano-pulse scanner. The focused laser beam with a diameter <10 ${\mu}m$ was illuminated in the power (P) and pulse duration (t) ranges of 1-31 mW and 10-460 ns, respectively, with subsequent detection of the responsive signals reflected from the film surface. We also evaluated the material characteristics, such as optical absorption and energy gap, crystalline phases, and sheet resistance of as-deposited and annealed films. The result of experiments showed that the thermal stability of the Ge-Se-Te film is largely improved by adding Se.

A Study on a Foxtail Electrostatic Microactuator with a High Resolution (고해상도의 Foxtail형 정전력 마이크로구동기에 대한 연구)

  • Kim Man-Geun;Kim Young-Yun;Jo Kyoung-Woo;Lee Jong-Hyun
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.06a
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    • pp.1198-1201
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    • 2005
  • A new foxtail actuator driven by V-shape beam deflection using electrostatic force has been designed, fabricated and characterized for nano-resolution manipulators. The proposed foxtail mechanism was implemented using a pair of electrostatic actuators and a pair of holding actuators, which was analyzed based on the electromechanically coupled motion of voltage - displacement relation. The proposed actuator was fabricated onto Silicon-on-Insulator (SOI) wafer and its stepping characteristics were measured by micro optical interferometer consisting of integrated micromirror and optical fiber. The fabricated foxtail microactuator was successfully operated from 1nm to 76nm, and the magnitude of step displacement was controllable up from 26nm/cycles to 53nm/cycle by changing the voltage.

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Fabrication of nano pattern using the injection molding (사출성형을 이용한 미세 패턴 성형)

  • Lee, Kwan-Hee;Yoo, Yeong-Eun;Kim, Sun-Kyoung;Kim, Tae-Hoon;Je, Tae-Jin;Choi, Doo-Sun
    • Proceedings of the KSME Conference
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    • 2007.05a
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    • pp.1532-1536
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    • 2007
  • A plastic substrate with tiny rectangular pillars less than 100nm is injection molded to study pattern replication in injection molding. The size of the substrate is 50mm ${\times}$ 50mm and 1mm thick. The substrate has 9 patterned areas of which size is 2mm ${\times}$ 2mm respectively. The lengths of the pillars are 50nm, 100nm, 150nm and 200nm and the width and height are 50nm and about 100nm respectively. A pattern master is fabricated by e-beam writing using positive PR(photo resist) and then a nickel stamper replicated from the PR master by nickel electro-plating. Cr is deposited on the PR pattern master before nickel electro-plating as a conducting layer. Using this nickel stamper, several injection molding experiments are done to investigate effects of the injection molding parameters such as mold temperature, injection rate, packing pressure or pattern location on the replication of the patterns under 100nm.

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The Effect of Diffusion Barrier and thin Film Deposition Temperature on Change of Carbon Nanotubes Length (탄소나노튜브 길이 변화에 대한 확산방지층과 박막 증착 온도의 영향)

  • Hong, Soon-kyu;Lee, Hyung Woo
    • Journal of Powder Materials
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    • v.24 no.3
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    • pp.248-253
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    • 2017
  • In this study, we investigate the effect of the diffusion barrier and substrate temperature on the length of carbon nanotubes. For synthesizing vertically aligned carbon nanotubes, thermal chemical vapor deposition is used and a substrate with a catalytic layer and a buffer layer is prepared using an e-beam evaporator. The length of the carbon nanotubes synthesized on the catalytic layer/diffusion barrier on the silicon substrate is longer than that without a diffusion barrier because the diffusion barrier prevents generation of silicon carbide from the diffusion of carbon atoms into the silicon substrate. The deposition temperature of the catalyst and alumina are varied from room temperature to $150^{\circ}C$, $200^{\circ}C$, and $250^{\circ}C$. On increasing the substrate temperature on depositing the buffer layer on the silicon substrate, shorter carbon nanotubes are obtained owing to the increased bonding force between the buffer layer and silicon substrate. The reason why different lengths of carbon nanotubes are obtained is that the higher bonding force between the buffer layer and the substrate layer prevents uniformity of catalytic islands for synthesizing carbon nanotubes.

Fabrication of Free-Standing Three-Dimensional Block Copolymer Patterns on Substrate (블록 공중합체 3차원 패턴의 제조 방법 및 그 구조 특성)

  • Choi, Hong Kyoon
    • Korean Journal of Materials Research
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    • v.29 no.12
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    • pp.804-811
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    • 2019
  • As the importance of three-dimensiona (3D) nano patterns and structures has recently emerged, interest in the study of 3D structures of block copolymers has increased. However, most existing studies on block copolymer 3D patterns on substrates are limited to simple 3D structures such as a multi-layered forms. In this study, we propose an experimental method for realizing free-standing 3D block copolymer patterns on substrates using an e-beam lithographic template and film transfer method. The block copolymer 3D structure formed in wide hole templates are similar to simple multi-layered structures; however, as the width of the hole template become narrower, more complex block copolymer 3D structures are formed in which the upper and lower layer structures are interconnected. Furthermore, we introduce a method to fabricate novel block copolymer structures in which the 2D planar structures are connected to 3D complex structures. Proposed 3D block copolymer fabrication method provides a framework for generation of unconventional 3D structures of block copolymer, which can be useful for next generation 3D devices.

Advanced Permeation Properties of Solvent-free Multi-Layer Encapsulation of thin films on Ethylene Terephthalate(PET)

  • Han, Jin-Woo;Kang, Hee-Jin;Kim, Jong-Yeon;Kim, Jong-Hwan;Han, Jung-Min;Moon, Hyun-Chan;Park, Kwang-Bum;Kim, Hwi-Woon;Seo, Dae-Shik
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.973-976
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    • 2006
  • In this paper, the inorganic multi-layer encapsulation of thin film was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam, Sputter, inorganic multi-layer thin-film encapsulation was deposited onto the Ethylene Terephthalate(PET) and their interface properties between inorganic and organic layer were investigated. In this investigation, the SiON $SiO_2$ and parylene layer showed the most suitable properties. Under these conditions, the water vapor transmission rate (WVTR) for PET can be reduced from level of $0.57g/m^2/day$ (bare substrate) to $1^{\ast}10^{-5}g/m^2/day$ after application of a SiON and $SiO_2$ layer. These results indicate that the $PET/SiO_2/SiON/Parylene$ barrier coatings have high potential for flexible organic light-emitting diode(OLED) applications.

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Field Emission properties of Porous Polycrystalline silicon Nano-Structure (다결정 다공질 실리콘 나노구조의 전계 방출 특성)

  • Lee, Joo-Won;Kim, Hoon;Park, Jong-Won;Lee, Yun-Hi;Jang, Jin;Ju, Byeong-Kwon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.04b
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    • pp.69-72
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    • 2002
  • We establish a visible light emission from porous polycrystalline silicon nano structure(PPNS). The PPNS layer are formed on heavily doped n-type Si substrate. 2um thickness of undoped polycrystalline silicon deposited using LPCVD (Low Pressure Chemical Vapor Deposition) anodized in a HF: ethanol(=1:1) as functions of anodizing conditions. And then a PPNS layer thermally oxidized for 1 hr at $900^{\circ}C$. Subsequently, thin metal Au as a top electrode deposited onto the PPNS surface by E-beam evaporator and, in order to establish ohmic contact, an thermally evaporated Al was deposited on the back side of a Si-substrate. When the top electrode biased at +6V, the electron emission observed in a PPNS which caused by field-induces electron emission through the top metal. Among the PPNSs as functions of anodization conditions, the PPNS anodized at a current density of $10mA/cm^{2}$ for 20 sec has a lower turn-on voltage and a higher emission current. Furthermore, the behavior of electron emission is uniformly maintained.

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Amorphous-to-Crystalline Phase Transition of (InTe)x(GeTe) Thin Films ((InTe)x(GeTe) 박막의 비정질-결정질 상변화)

  • Song, Ki-Ho;Beak, Seung-Cheol;Lee, Hyun-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.3
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    • pp.199-205
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    • 2010
  • The crystallization speed (v) of amorphous (InTe)$_x$(GeTe) (x = 0.1, 0.3 and 0.5) films and their thermal, optical and electrical behaviors have been investigated using nano-pulse scanner (wavelength = 658 nm, laser beam diameter < 2 ${\mu}m$), X-ray diffraction (XRD), 4-point probe and UV-vis-IR spectrophotometer. These results were compared with those of $Ge_2Sb_2Te_5$ (GST) film, comprehensively utilized for phase-change random access memory (PRAM). Both v-value and thermal stability of (InTe)$_{0.1}$(GeTe) and (InTe)$_{0.3}$(GeTe) films could be enhanced in comparison with those of the GST. Contrarily, the v-value in the (InTe)$_{0.5}$(GeTe) film was so drastically deteriorated that we could not quantitatively evaluate it. This deterioration is thought because amorphous (InTe)$_{0.5}$(GeTe) film has relatively high reflectance, resulting in too low absorption to cause the crystallization. Conclusively, it could be thought that a proper compositional (InTe)$_x$(GeTe) films (e.g., x < 0.3) may be good candidates with both high crystallization speed and thermal stability for PRAM application.