• 제목/요약/키워드: nano PSS

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Non-polar and Semi-polar InGaN LED Growth on Sapphire Substrate

  • 남옥현
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.51-51
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    • 2010
  • Group III-nitride semiconductors have been widely studied as the materials for growth of light emitting devices. Currently, GaN devices are predominantly grown in the (0001) c-plane orientation. However, in case of using polar substrate, an important physical problem of nitride semiconductors with the wurtzite crystal structure is their spontaneous electrical polarization. An alternative method of reducing polarization effects is to grow on non-polar planes or semi-polar planes. However, non-polar and semipolar GaN grown onto r-plane and m-plane sapphire, respectively, basically have numerous defects density compared with c-plane GaN. The purpose of our work is to reduce these defects in non-polar and semi-polar GaN and to fabricate high efficiency LED on non/semi-polar substrate. Non-polar and semi-polar GaN layers were grown onto patterned sapphire substrates (PSS) and nano-porous GaN/sapphire substrates, respectively. Using PSS with the hemispherical patterns, we could achieve high luminous intensity. In case of semi-polar GaN, photo-enhanced electrochemical etching (PEC) was applied to make porous GaN substrates, and semi-polar GaN was grown onto nano-porous substrates. Our results showed the improvement of device characteristics as well as micro-structural and optical properties of non-polar and semi-polar GaN. Patterning and nano-porous etching technologies will be promising for the fabrication of high efficiency non-polar and semi-polar InGaN LED on sapphire substrate.

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신축성 리튬이온전지를 위한 DMSO 도핑 PEDOT:PSS 나노 섬유 집전체 (Stretchable Current Collector Composing of DMSO-dopped Nano PEDOT:PSS Fibers for Stretchable Li-ion Batteries)

  • 권오현;이지혜;김재광
    • 전기화학회지
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    • 제24권4호
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    • pp.93-99
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    • 2021
  • 스트레처블 에너지 저장 장치 경량화를 위해 금속 집전체를 대체할 경량 물질 개발에 대한 관심이 높아지고 있다. 본 연구에서는 전도성 고분자인 PEDOT:PSS를 전기방사법으로 제조한 나노 섬유를 리튬이온전지용 집전체로 사용하였다. 나노 섬유는 도펀트인 DMSO를 사용해 향상된 전기 전도성을 나타냈으며, 신축성 평가결과로 부터 30% 이상의 신축률을 보여주었다. 또한, 나노 섬유 집전체를 사용함으로써 액체 전해질의 침투가 용이하며, 나노 섬유 네트워크를 통해 전자전도성을 높이는 효과를 나타났었다. DMSO 도핑 PEDOT:PSS@PAM 나노 섬유 필름 집전체를 사용한 리튬이온전지는 135mAh g-1의 높은 방전용량을 보여주었으며, 1000 사이클 이후 73.5%의 높은 용량 유지율을 나타내었다. 따라서, 전도성 나노 섬유의 우수한 전기화학적 안정성과 기계적 특성은 신축성 에너지 저장 장치의 경량 집전체로서의 활용이 가능함을 보여주었다.

금속 나노입자 함량에 따른 유기나노복합체의 광학 및 전기전도성 특성변화 (Effect of Silver Nano-particle Concentration on the Optical and Electrical Characteristics of Organic-based Nano-composite Electrodes)

  • 김영훈;박성규;한정인
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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    • pp.125-126
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    • 2008
  • 본 연구에서는 금속 나노입자 함량에 따른 유기나노복합체에서의 광학 및 전기전도도 특성변화를 분석하였다. 유기나노복합체 전극은 전기전도성을 가리고 있는 PEDOT : PSS(poly(3,4-ethylenedioxythio- phone):poly(styrenesulfonate))나노 입자를 기반으로 하며 이 복합제에 미량의 Ag nano-particle을 첨가하여 전기전도도 특성을 향상시키는 연구를 진행하였다. Ag nano-particle은 전체 중량 대비 01 - 0.4%의 범위에서 첨가하였으며 실험결과 0.1%의 첨가 비율에서 약 5% 정도의 전기전도도 특성 향상이 확인되었다. 또한 광투과도 변화를 분석해본 결과 0.4%까지의 Ag nano-particle 첨가 비율에서는 광투과도의 비율이 크게 감소되지 않는 것으로 파악되었다.

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Printing Technologies for the Gate and Source/Drain Electrodes of OTFTs

  • Lee, Myung-Won;Lee, Mi-Young;Song, Chung-Kun
    • Journal of Information Display
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    • 제10권3호
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    • pp.131-136
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    • 2009
  • This is a report on the fabrication of a flexible OTFT backplane for electrophoretic display (EPD) using a printing technology. A practical printing technology for a polycarbonate substrate was developed by combining the conventional screen and inkjet printing technologies with the wet etching and oxygen plasma processes. For the gate electrode, the screen printing technology with Ag ink was developed to define the minimum line width of ${\sim}5{\mu}m$ and the thickness of ${\sim}70nm$ with the resistivity of ${\sim}10^{-6}{\Omega}{\cdot}cm$, which are suitable for displays with SVGA resolution. For the source and drain (S/D) electrodes, PEDOT:PSS, whose conductivity was drastically enhanced to 450 S/cm by adding 10 wt% glycerol, was adopted. In addition, the modified PEDOT:PSS could be neatly confined in the specific S/D electrode area that had been pretreated with oxygen. The OTFTs that made use of the developed printing technology produced a mobility of ${\sim}0.13cm^2/Vs.ec$ and an on/off current ratio of ${\sim}10^6$, which are comparable to those using thermally evaporated Au for the S/D electrode.

Pentacene Thin Film Transistors with Various Polymer Gate Insulators

  • Kim, Jae-Kyoung;Kim, Jung-Min;Yoon, Tae-Sik;Lee, Hyun-Ho;Jeon, D.;Kim, Yong-Sang
    • Journal of Electrical Engineering and Technology
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    • 제4권1호
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    • pp.118-122
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    • 2009
  • Organic thin film transistors with a pentacene active layer and various polymer gate insulators were fabricated and their performances were investigated. Characteristics of pentacene thin film transistors on different polymer substrates were investigated using an atomic force microscope (AFM) and x-ray diffraction (XRD). The pentacene thin films were deposited by thermal evaporation on the gate insulators of various polymers. Hexamethyldisilazane (HMDS), polyvinyl acetate (PVA) and polymethyl methacrylate (PMMA) were fabricated as the gate insulator where a pentacene layer was deposited at 40, 55, 70, 85, 100 oC. Pentacene thin films on PMMA showed the largest grain size and least trap concentration. In addition, pentacene TFTs of top-contact geometry are compared with PMMA and $SiO_2$ as gate insulators, respectively. We also fabricated pentacene TFT with Poly (3, 4-ethylenedioxythiophene)-Polysturene Sulfonate (PEDOT:PSS) electrode by inkjet printing method. The physical and electrical characteristics of each gate insulator were tested and analyzed by AFM and I-V measurement. It was found that the performance of TFT was mainly determined by morphology of pentacene rather than the physical or chemical structure of the polymer gate insulator

Study of White Polymer Light Emitting Diode with Blending Method

  • Shin, Byong-Wook;Lee, Sung-Youp;Lee, Eui-Wan;Lee, Hyeong-Rag
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1461-1463
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    • 2007
  • In this study, we report the luminescent properties of white polymer light emitting diode (WPLED) fabricated by soluble methods with poly-fluorenebased polymers blends which emit blue and yellow light. A device structure of ITO/PEDOT:PSS/Emissive Layer (EML)/Al was employed.

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고분자전해질 multilayering 나노기법을 도입한 펄프섬유의 전기화학적 특성에 관한 기초 연구 (Basic Study on Electrochemical Properties of Multilayered Pulp Fibers with Polyelectrolytes)

  • 윤혜정;진성민;류재호;권현승
    • 펄프종이기술
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    • 제39권4호
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    • pp.53-60
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    • 2007
  • LbL multilayering technology introduced by Decher is a nano technique that a substrate surface is layered by the successive deposition of polyelectrolytes with positive and negative charge. We investigated the electrochemical properties of LbL multilayered pulp fibers with poly-DADMAC and PSS. Three types of pulp-Hw-BKP, BCTMP and KOCC- were treated with polyelectrolytes. Zeta potentials of multilayered fibers ranged from +30 mV to +40 mV, depending on the intial zeta potential of pulp fibers and fines content. All kinds of pulp which were examined in this study, however, showed a similar zeta potential of -35 mV after layering with PSS. To obtain pulp fiber with a uniform and stable zeta potential, BCTMP and KOCC pulp fibers should be multilayered above 5 times. The addition level of polyelectrolytes had little influence on the zeta potential of pulp fibers.

잉크젯 프린팅 기술을 이용한 전도성 폴리머 저항의 제작 (Fabrication of Conductive Polymer Resistors Using Ink-jet Printing Technology)

  • 이상호;김명기;신권용;강경태;박문수;황준영;강희석
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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    • pp.98-99
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    • 2007
  • This study has successfully demonstrated the direct fabrication of polymer resistors using ink-jet printing technology as an alternative patterning to traditional photolithography. The polymer resistors were fabricated just by two layer processes using a ink-jet printer (DMP-2800, Fujifilm Dimatix). First, resistive materials was patterned by a ink-jet printing with the desired width and length. Next, resistor fabrication was completed by printing metal contact pads on the both sides of the polymer resistor. We used poly (3,4-ethylene dioxythiophene) poly(styrenesulfonate)(PEDOT:PSS) for the resistor material and a nano-sized silver colloid for the metal contact pads. We characterized the electrical properties of PEDOT:PSS by measuring sheet resistance and specific resistance on a glass substrate. From analysis of the measured resistances, the electrical resistances of the polymer resistors linearly increased as a function of printed width and length of resistors. The accuracy of the fabricated polymer resistor showed about $0.6{\sim}2.5%$ error for the same dimensions.

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Synthesis, morphology and electrochemical applications of iron oxide based nanocomposites

  • Letti, Camila J.;Costa, Karla A.G.;Gross, Marcos A.;Paterno, Leonardo G.;Pereira-da-Silva, Marcelo A.;Morais, Paulo C.;Soler, Maria A.G.
    • Advances in nano research
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    • 제5권3호
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    • pp.215-230
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    • 2017
  • The development of hybrid systems comprising nanoparticles and polymers is an opening pathway for engineering nanocomposites exhibiting outstanding mechanical, optical, electrical, and magnetic properties. Among inorganic counterpart, iron oxide nanoparticles (IONP) exhibit high magnetization, controllable surface chemistry, spintronic properties, and biological compatibility. These characteristics enable them as a platform for biomedical applications and building blocks for bottom-up approaches, such as the layer-by-layer (LbL). In this regard, the present study is addressed to investigate IONP synthesised through co-precipitation route (average diameter around 7 nm), with either positive or negative surface charges, LbL assembled with sodium sulfonated polystyrene (PSS) or polyaniline (PANI). The surface and internal morphologies, and electrochemical properties of these nanocomposites were probed with atomic force microscopy, UV-vis and Raman spectroscopy, scanning electron microscopy, cross-sectional transmission electron microscopy, and electrochemical measurements. The nanocomposites display a globular morphology with IONP densely packed while surface dressed by polyelectrolytes. The investigation of the effect of thermal annealing (300 up to $600^{\circ}C$) on the oxidation process of IONP assembled with PSS was performed using Raman spectroscopy. Our findings showed that PSS protects IONP from oxidation/phase transformation to hematite up to $400^{\circ}C$. The electrochemical performance of nanocomposite comprising IONP and PANI were investigated in $0.5mol{\times}L^{-1}$ $Na_2SO_4$ electrolyte solution by cyclic voltammetry and chronopotentiometry. Our findings indicate this structure as promising candidate for potential application as electrodes for supercapacitors.

InP/ZnS Core/shell as Emitting Layer for Quantum Dot LED

  • Kwon, Byoung-Wook;Son, Dong-Ick;Lee, Bum-Hee;Park, Dong-Hee;Lim, Ki-Pil;Woo, Kyoung-Ja;Choi, Heon-Jin;Choi, Won-Kook
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.451-451
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    • 2012
  • Instead of a highly toxic CdSe and ZnScore-shell,InP/ZnSecore-shell quantum dots [1,2] were investigated as an active material for quantum dot light emitting diode (QD-LED). In this paper, aquantum dot light-emitting diode (QDLED), consisting of a InP/ZnS core-shell type materials, with the device structure of glass/indium-tin-oxide (ITO)/PEDOT:PSS/Poly-TPD/InP-ZnS core-shell quantum dot/Cesium carbonate(CsCO3)/Al was fabricated through a simple spin coating technique. The resulting InP/ZnS core-shell QDs, emitting near blue green wavelength, were more efficient than the above CdSe QDs, and their luminescent properties were comparable to those of CdSe QDs.Thebrightness ofInP/ZnS QDLED was maximumof 179cd/m2.

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