• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.429-429
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• 2012

To investigate the gettering effect of B-doped n-type monocrystalline silicon wafer, we made the p-n junction by diffusing boron into n-type monocrystalline Si substrate and then oxidized the boron doped n-type monocrystalline silicon wafer by in-situ wet and dry oxidation. After oxidation, the minority carrier lifetime was measured by using microwave photoconductance and the sheet resistance by 4-point probe, respectively. The junction depth was analyzed by Secondary Ion Mass Spectrometry (SIMS). Boron diffusion reduced the metal impurities in the bulk of silicon wafer and increased the minority carrier lifetime. In the case of wet oxidation, the sheet resistance value of ${\sim}46{\Omega}/{\Box}$ was obtained at $900^{\circ}C$, depostion time 50 min, and drive-in time 10 min. Uniformity was ~7% at $925^{\circ}C$, deposition time 30 min, and drive-in time 10 min. Finally, the minority carrier lifetime was shown to be increased from $3.3{\mu}s$ for bare wafer to $21.6{\mu}s$ for $900^{\circ}C$, deposition 40 min, and drive-in 10 min condition. In the case of dry oxidation, for the condition of 50 min deposition, 10 min drive-in, and O2 flow of 2000 SCCM, the minority carrier lifetime of 16.3us, the sheet resistance of ${\sim}48{\Omega}/{\Box}$, and uniformity of 2% were measured.

• The Journal of the Korea Contents Association
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• v.20 no.9
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• pp.380-388
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• 2020

This study is a subjective study on consumer's perception of drive-through as part of one method of service business to drive the drive-through service to understand how the user's perspective is more effective than the company's management position. In order to analyze the consumer's subjective viewpoint on the use of through companies, an exploratory study was conducted by selecting the Q-methodology. To this end, the analysis work was conducted in a way that the respondents classified the statement cards, and the Q population was selected and composed. Through this, the P-sample was selected and the Q-sort obtained through the classification process was used for the PC QUANL program. Was analyzed through Q factor analysis. customers divide into 3 types. Firstly, type 1 (N=14) is the people who pursue the convenience on value for time. Secondly, type 2 customers (N=4) prefer efficiency on value for time. finally, type 3 ones (N=2) put a great value on quickness. Each subjective opinion detected through this analysis will be the basis for various studies in the future, and may be used as a reference in the future direction of establishing drive-through marketing and improving the lacking parts.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.21-23
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• 1988

Microstepping drive of 3 phase VR step motor with 2 phase exciting scheme is proposed. Considering the presence of harmonic components of inductance, the current reference is calculated. The experimental results show high accuracy of divided step position and resonance or instability in operating range.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.45-48
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• 1987

In applications of step-motor, the requirements of small-size and strong-power gave birth to feed-back drive to the maximum efficiency and complete damping. In this paper, a new scheme that determines switching times from sensed values of position and speed is presented for simple bang-bang type drive circuit. The optimal values of each phase switching times are obtained using conjugate gradient method.

• Proceedings of the KAIS Fall Conference
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• 2010.11a
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• pp.168-171
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• 2010

본 논문에서는 GaN HEMT 소자를 이용한 고출력 고효율 특성을 가지는 광대역 SSPA의 개발을 다루고 있다. 개발한 SSPA는 8W 급과 15W 급의 GaN HEMT 소자를 사용하여 Pre-Drive 증폭단을 구성하였으며, Drive 증폭단은 50W/150W급 GaN HEMT 소자를 직/병렬구조로 사용하였다. Main 증폭단은 4-way 분배기와 결합기를 이용한 Balanced Structure를 적용하여 높은 출력을 구현하였으며, 안정적인 동작을 위하여 음(-)전원 제어 회로와 출력신호 검출 회로를 포함하고 있다. 제작된 SSPA의 사용가능 대역은 2.9GHz~3.3GHz로 단일전원을 사용하고 있으며 100us 펄스 폭, 10% Duty Cycle 조건에서 60dB의 전압이득, 1kW 출력과 약 28% 효율 특성을 가지는 것으로 측정되었다. 본 논문에서 개발한 SSPA는 S-대역을 사용하는 레이더시스템의 송신단에 적용될 수 있다.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.11B no.3
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• pp.64-69
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• 2001

Energy recovery in the regenerative region is very important when SRM is used in traction drive, This is to reduce en-ergy loss during mechanical braking and/or to have a high efficiency drive during braking To control excitation voltage in motor operation and regenerative voltage in the generator operation in the SRM multi-level voltage control is effective The paper sug-gests multi-level inverter which is useful for motoring and regenerative operation in SRM

• Journal of Power Electronics
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• v.6 no.2
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• pp.121-130
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• 2006

This paper presents the performance and efficiency of a drive system incorporating a switched-reluctance motor (SRM) with input power factor correction (PFC). The proposed system consists of a PFC, bi-directional converter, an inverter, and a SRM operating as based voltage source drives (VSD). First, theoretical analysis is made for each identified mode of operation in the drive system. This is followed by comparing the performance of the SRM drive system with and without a PFC circuit. The losses are also calculated for both systems and overall efficiency. Experimental results are presented to prove the theoretical analysis.

• Proceedings of the KIPE Conference
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• 2007.07a
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• pp.334-336
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• 2007

This paper proposes a novel RGB-LED (light emitting diode) backlight system, for 32" LCD TVs, accompanied by a new X-Y Channel drive method in which its row and column switches control the individual division screen. This proposed driving method is able to produce division drive effects such as image improvement and reduced power consumption. Not only that, the number of converter needed in this method, that is 1 with $4^*$(m+n) switches, is much fewer than that of cluster drive method, that is $4^*(m^*n)$.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.11B no.3
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• pp.112-118
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• 2001

In the near future, the voltage of power system for passenger vehicle will be changed to 42V from existing 14V./ Because of increasing power and voltage ratings used in the vehicle the motor drive system has high switching dv/dt and it generates electromagnetic interference (EMI) To solve these problems multi-level inverter system may be used The feature of multi-level inverter is the output voltage to be synthesized from several levels of voltage Because of this feature high switching dv/dt and EMI can be reduced in the multi-level inverter system But as the number of level is increased manufacturing cost is getting expensive and system size is getting large. Because of these disadvantages the application of multi-level inverter has been restricted only to high power drives. The method to reduce manufacturing cost and system size is to integrate circuit of multi-level inverter into a few chips But isolated power supply and signal isolation circuit using transformer or opto-coupler for drive circuit are obstacles to implement the integrated circuit (IC) In this paper a drive circuit of 4-level inverter suitable for integration to hybrid or one chip is proposed In the proposed drive circuit DC link voltage is used directly as the power source of each gate drive circuit NPN transistors and PNP transistors are used to isolate to transfer the control signals. So the proposed drive circuit needs no transformers and opto-couplers for electrical isolation of drive circuit and is constructed only using components to be implemented on a silicon wafer With th e proposed drive circuit 4- level inverter system will be possible to be implemented through integrated circuit technology Using the proposed drive circuit 4- level inverter system is constructed and the validity and characteristics of the proposed drive circuit are proved through the experiments.

• Korean Journal of Materials Research
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• v.8 no.5
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• pp.470-473
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• 1998

$As^+$ was ion-implanted onto $CoSi_{2}$ thin films formed by rapidly thermal-annealed Co/Ti bilayers. Then the specimens were drive-in annealed at 500~100$0^{\circ}C$ to form ultra-shallow $n^+$p junction diodes and to measure their 1- V characteristics. When drive-in annealed at 50$0^{\circ}C$ for 280 sec., 50 nm thick ultra-shallow junctions were formed and di¬odes showed the best 1- V characteristics with low leakage current. In particular. the leakage current was 2 orders lower than that of diodes formed by using Co monolayer. It was attributed to uniform $CoSi_{2}$/Si interfaces.