• Title/Summary/Keyword: n type Si

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Fabrication and Estimation of Single-Transistor-Cell-Type FeRAM (MFS-FET) Using SOI Substrate (SOI 기판을 이용한 1-트랜지스터 구조 강유전체 비휘발성 메모리(MFS-FET)의 제작 및 평가)

  • Kim, N.K.;Lee, S.J.;Choi, H.B.;Kim, C.J.
    • Proceedings of the KIEE Conference
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    • 1999.11d
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    • pp.921-923
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    • 1999
  • 비휘발성 메모리의 고집적화와 적응학습형 뉴럴 소자의 실현을 위하여 1-트랜지스터 구조 강유전체 비휘발성 메모리(MFS-FET)를 SOI 기판위에 제작하고 평가하였다. 먼저 SBT($Sr_{0.8}Bi_{2.2}Ta_{2}O_{9}$)를 직접 Si위에 증착하고 C-V를 측정하여 1V의 메모리 윈도우를 얻음으로써 비휘발성 메모리로써의 동작가능성을 확인하였다. 또한 다양하게 게이트의 W/L 비를 바꾸어서 MFS-FET를 제작하여 다양한 드레인 전압-드레인 전류 특성을 얻었고 실제로 쓰기와 읽기 동작을 수행하여 MFS-FET가 비휘발성 메모리로써 제대로 동작하고 있음을 확인하였다.

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Geochemical Characteristics of Volcanics from Yangsan, Kyeongnam Province (경남(慶南) 양산지역(梁山地域)에 분포(分布)하는 화산암류(火山岩類)의 지구화학적(地球化學的) 특성연구(特性硏究))

  • Kim, M.Y.;Shin, H.J.;Lee, P.K.;Jang, Y.N.
    • Economic and Environmental Geology
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    • v.21 no.2
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    • pp.139-148
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    • 1988
  • The altered volcanic rocks, ranging from tuffaceous to andesitic rocks are widely distributed around the "caldera" area in the southeastern part of Kyeongsang province. The volcanic activity and tectonic movement are assumed to be followed by the hydrothermal activities in the area. From the mineral assemblage the type of alteration can be divided into two types; propylitic and argillic. The average concentration of gold in hydrothermally altered rocks is somewhat lower (about 20 ppb) than that of fresh rocks (45-25 ppb), but for Ag, vice versa. During the hydrothermal process, the concentration of the trace elements Ag, Hg, Co, As, Hf, Sc, Si, Al increased, and that of Na, Rb, K, Au, Mg, Ca etc. decreased. The high anomalous contents of silver for altered rocks range from 4-7 ppm and 1-3 ppm for relatively fresh rocks.

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Impedance Properties of Thin Film Inductors by Fabricated Wet Etching Method (습식 식각법으로 제조된 박막 인덕터의 임피턴스 특성)

  • 김현식;송재성;오영우
    • Electrical & Electronic Materials
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    • v.10 no.8
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    • pp.813-818
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    • 1997
  • In this study the thin film air core and magnetic core inductors consisting of planar coil and/or CoNbZr amorphous magnetic layers on a Si substrate were fabricated as spiral type by using rf magnetron sputtering and wet etching methods. The etchant solution was achieved by iron chloride solution(17.5 mol%) mixed with HF (20 mol%) during 150 sec which etched Cu films and CoNbZr/Cu/CoNbZr multi-layer films. They were about 10${\mu}{\textrm}{m}$ of thickness and 10$\times$10 mm$^2$of size. The properties of thin film magnetic core inductor were 400 nH of Q value at 10 MHz and the resonance frequency was about 300 MHz.

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The Fabrication of Ceramic Thin-Film Type Pressure Sensors for High-Temperature applications (고온용 세라믹 박막형 압력센서의 제작)

  • Kim, Jae-Min;Choi, Sung-Kyu;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.456-459
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    • 2002
  • This paper describes fabrication and characteristics of ceramic pressure sensor for working at high temperature. The proposed pressure sensor consists of a Ta-N thin-film, patterned on a Wheatstone bridge configuration, sputter deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097~1.21mV/$V{\cdot}kgf/cm^2$ in the temperature range of $25{\sim}200^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

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Conductive Characterization of DLC Thin Films Fabricated by Radio-Frequency Magnetron Sputtering

  • Cao, Nguyen Van;Kim, Tae-Gyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.290-290
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    • 2011
  • In this study Diamond-like carbon (DLC) films were deposited on p-type Si substrates using a Radio-Frequency magnetron Sputtering system. The DLC film was deposited by bombarding graphite target with a N2/Ar plasma mixture with various conditions: substrate, pressure, deposition time, temperature of substrate, power and ratio of gas mixture. The effect on the conduction and hardness of DLC thin films were investigated. The conduction of DLC films were measured by I-V measurement. In addition, Raman analysis was performed to study the chemical bonding structure. The hardness was measured by Nano indentation. Atomic Force Microscopy was used for determined surface morphology of DLC film.

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An a-D film for flat panel displays prepared by FAD

  • Liu, Xianghuai;Mao, Dongsheng
    • Journal of the Korean Vacuum Society
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    • v.7 no.s1
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    • pp.7-14
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    • 1998
  • Details are given of an study of the characteristics of field-induced electron emission from hydrogen-free high $sp^3$ content(>90%) amorphous diamond (a-D) film deposited on heavily doped ($\rho$<0.01 $\Omega\cdot\textrm{cm}$) n-type monocrystalline Si(111) substrate. It is demonstrated that a-D film has excellent electron field emission properties. Emission current can reach 0.9 $\mu$A at applied field as low as 1 V/$\mu\textrm{m}$, and emission current density can be obtained about several mA/$\textrm{cm}^2$. The emission current is stable when the beginning current is at 50 $\mu$A within 72 hours. Uniform fluorescence display of electron emission from whole face of the a-D film under the electric field of 10~20 V/$\mu\textrm{m}$ was also observed. It can be considered that the contribution of excellent electron emission property results from its smooth, uniform, amorphous surface and high $sp^3$ content of the a-D films.

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The Characterization of Poly-Si Thin Film Transistor Crystallized by a New Alignment SLS Process

  • Lee, S.J.;Yang, J.Y.;Hwang, K.S.;Yang, M.S.;Kang, I.B.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.16-19
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    • 2007
  • In this paper, we present work that has been carried out using the SLS process to control grain boundary(GB) location in TFT channel region and it is possible to locate the GB at the same location in the channel region of each TFT. We fabricated TFT by applying a new alignment SLS process and compared the TFT characteristics with a normal SLS method and the grain boundary location controlled SLS method. Also, we have analyzed degradation phenomena under hot carrier stress conditions for n-type LDD MOSFETs.

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The Resistivity Properties of SrTiO$_3$ Thin Films by Sputtering method. (스퍼터링 방법을 이용한 SrTiO$_3$박막의 저항을 특성)

  • 이우선;손경춘;서용진;김남오;이경섭;김형곤
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.207-210
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    • 1999
  • The objective of this study Is to deposited the preparation of SrTiO$_3$3 dielectric thin films on Ag/barrier-mater/Si(N-type 100) bottom electrode using a conventional rf-magnetron sputtering technique with a ceramic target under various conditions. It is demonstrated that the leakage current of films are strongly dependent on the atmosphere during deposition and the substrate temperature. The resistivity properties of films deposited on silicon substrates were very high resistivity. Capacitance of the films properties were the highest value(1000pF) and dependent on substrate temperature.

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A BIPOLAR PLANETARY NEBULA NGC 6537: PHOTOIONIZATION OR SHOCK HEATING?

  • HYUNG SIEK
    • Journal of The Korean Astronomical Society
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    • v.32 no.1
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    • pp.55-63
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    • 1999
  • NGC 6537 is an extremely high excitation bipolar planetary nebula. It exhibits a huge range of excitation from lines of [N I] to [Si VI]or [Fe VII], i.e. from neutral atoms to atoms requiring an ionization potential of $\~$167eV. Its kinematical structures are of special interest. We are here primarily concerned with its high resolution spectrum as revealed by the Hamilton Echelle Spectrograph at Lick Observatory (resolution $\~0.2{\AA}$) and supplemented by UV and near-UV data. Photoionization model reproduces the observed global spectrum of NGC 6537, the absolute H$\beta$ flux, and the observed visual or blue magnitude fairly well. The nebulosity of NGC 6537 is likely to be the result of photo-ionization by a very hot star of $T_{eff} \~ 180,000 K$, although the global nebular morphology and kinematics suggest an effect by strong stellar winds and resulting shock heating. NGC 6537 can be classified as a Peimbert Type I planetary nebula. It is extremely young and it may have originated from a star of about 5 $M_{\bigodot}$.

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The study on the temperature characteristics of conductivity for SrTiO$_3$ thin films. (산화 스트롬튬 박막 전도도의 온도특성에 관한 연구)

  • 이우선;손경춘;박정기;김상용;장의구
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.437-440
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    • 1999
  • The objective of this study is to deposited the preparation of SrTiO$_3$dielectric thin films on Ag/barrier-mater/Si(N-type 100) bottom electrode using a conventional rf-magnetron sputtering technique with a ceramic target under various conditions. It is demonstrated that the leakage current of films are strongly dependent on the substrate temperature. The current-voltage characteristics are influenced by the Schottky effict. The resistivity properties of films deposited on silicon substrates were very high resistivity. Conduction mechanisms in the films was dependent on the substrate temperature range.

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