• Fire Science and Engineering
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• v.16 no.4
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• pp.15-19
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• 2002

This dissertation is about the development of $BaTiO_3$-type PTC(Positive Temperature Coefficient) thermistor by composition method. A multilayer-type PTC samples were fabricated under optimal conditions after setting the experimental composition equation as ($Ba_{0.95-x}$S $r_{0.05}$$Ca_{x}$ )$TiO_3$-$0.01TiO_2$-$0.01SiO_2$-$\alpha$$MnCO_3$-$\beta$N $b_2$ $O_{5}$.) and their testing results were analyzed. The optimal sin-tering and cooling temperatures were 13$50^{\circ}C$ for two hours and $100^{\circ}C$/h for an hour, respectively; By composing Ca and Mn, dopants to lower the resistivity at room temperature, and Nb, a dopant to raise peak resistivity(Ca:5 mol%, Mn:0.08 mol%, Nb:0.18 mol%), appropriately, a PTC thermistor, having the characteristics of relatively low resistivity at room temperature and high peak resistivity and a good temperature coefficient, has been developed. And we find that it is possible of application for fire detection sensor.r.r.

• Journal of Welding and Joining
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• v.35 no.2
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• pp.23-29
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• 2017

Mechanical properties and hardness distributions in arc brazed joints of Dual phase steel using Cu-Al insert metal were investigated. The maximum tensile shear load was 10.4kN at the highest brazing current. It was about 54% compared to tensile load of base metal. This joint efficiency is higher than that of joint of DP steel using Cu-based filler metals which are Cu-Si, Cu-Sn. Fracture positions can be divided into two types. Crack initiation commonly occurred at three point junction among upper sheet, lower sheet and the fusion zone. However crack propagations were different with increasing the brazing current. In case of the lower current, it instantaneously propagated along with the interface between fusion zone and upper base material. On the other hand, in case of higher current, a crack propagation occurred through fusion zone. When the brazing current is low (60, 70A), the interface shape is flat type. However the interface shape is rough type, when the brazing current is high (80A). It is thought that the interface shapes were the reason why the crack propagations were different with brazing current. The interface was the intermetallic compounds which consisted of $(Fe,Al)_{0.85}Cu_{0.15}$ IMC formed by crystallization at $1200^{\circ}C$during cooling. Therefore the maximum tensile shear load and the fracture behavior were determined by a interface shape and effective sheet thickness of the fracture position.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.367-371
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• 2001

In this paper, theS $r_2$(T $a_{1-x}$ , N $b_{x}$)$_2$ $O_{7}$(STNO) films among ferroelectric materials having a low dielectric constant for metal-ferroelectric-semiconductor field effect transistor(MFS-FET) were discussed. The STNO thin films were deposited on p-type Si(100) at room temperature by co-sputtering with S $r_2$N $b_2$ $O_{7(SNO)}$ ceramic target and T $a_2$ $O_{5}$ ceramic target. The composition of STNO thin films was varied by adjusting the power ratios of SNO target and T $a_2$ $O_{5}$ target. The STNO films were annealed at 8$50^{\circ}C$, 90$0^{\circ}C$ and 9$50^{\circ}C$ temperature in oxygen ambient for 1 hour. The value of x has significantly influenced the structure and electrical properties of the STNO films. In the case of x= 0.4, the crystallinity of the STNO films annealed at 9$50^{\circ}C$ was observed well and the memory windows of the Pt/STNO/Si structure were 0.5-8.3 V at applied voltage of 3-9 V and leakage current density was 7.9$\times$10$_{08}$A/$\textrm{cm}^2$ at applied voltage of -5V.of -5V.V.V.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.114-114
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• 1999

Boron nitride (BN)는 매우 뛰어난 물리적, 화학적 성질을 가지고 있는 재료로 많은 연구가 진행되고 있다. hexagonal 형태의 hBN의 경우 큰 전기 저항과 열 전도도를 가지고 있고 열적 안정성을 가지고 있어 반도체 소자에서 절연층으로 쓰일 수 있다. 또한 X-ray와 가시광선을 투과시키기 때문에 X-ray와 가시광선을 투과시키기 때문에 X-ray lithography이 mask 기판으로 사용될 수 있다. Boron-carbon-nitrogen (BCN) 역시 뛰어난 기계적 성질과 투명성을 가지고 있어 보호 코팅이나 X-ray lithography에 이용될 수 있다. 또한 원자 조성이나 구성을 변화시켜 band gap을 조절할 수 있는 가능성을 가지고 있기 때문에 전기, 광소자의 재료로 이용될 수 있다. 본 연구에서는 여러 합성 조건 변화에 따른 hBN 막의 합성 거동을 관찰하고, 카본 농도변화에 따른 BCN 막의 기계적 성질과 구조의 변화, 그리고 실리콘 첨가에 의한 물성 변화를 관찰하였다. BN박막은 실리콘 (100) 기판 위에 r.f. plasma assisted CVD를 이용하여 합성하였다. 합성 압력 0.015 torr, 원료 가스로 BCl3 1.5 sccm, NH3 6sccm을 Ar 15 sccm을 사용하여 기판 bias (-300~-700V)와 합성온도 (상온~50$0^{\circ}C$)를 변화시켜 BN막을 합성하였다. BCN 박막은 상온에서 기판 bias를 -700V로 고정시킨 후 CH4 공급량과 Ar 가스의 첨가 유무를 변화시켜 합성하였다. 또한 SiH4 가스를 이용하여 실리콘을 함유하는 Si-BCN 막을 합성하였다. 합성된 BN 막의 경우, 기판 bias와 합성 온도가 증가할수록 증착속도는 감소하는 경향을 보여 주었다. 기판 bias와 합성온도에 따른 구조 변화를 SEM과 Xray로 분석하였다. 상온에서 합성한 경우는 표면형상이 비정질 형태를 나타내었고, X-ray peak이 거의 관찰되지 않았다. 합성온도가 증가하게 되면 hBN (100) peak이 나타나게 되고 이것은 합성된 막이 turbostratic BN (tBN) 형태를 가지고 있다는 것을 나타낸다. 50$0^{\circ}C$의 합성 온도에서 기판 bias가 -300V에서 hBN (002) peak이 관찰되었고, -500, -700 V에서는 hBN (100) peak만이 관찰되었다. 따라서 고온에서의 큰 ion bombardment는 합성되는 막의 결정성을 저해하는 요소로 작용한다는 것을 확인 할 수 있었다. 합성된 BN 막은 ball on disk type의 tribometer를 이용하여 마모 거동을 관찰한 결과 대부분 1이상의 매우 큰 friction coefficient를 나타내었고, nano-indenter로 측정한 BN막의 hardness는 매우 soft한 막에서부터 10 GPa 정도 까지의 값을 나타내었고, nano-indenter로 측정한 BN 막의 hardness는 매우 soft한 막에서부터 10GPa 정도 까지의 값을 가지며 변하였다. 합성된 BCN, Si-BCN 막은 FT-IR, Raman, S-ray, TEM 분석을 통하여 그 구조와 합성된 상에 관하여 분석하였다. FT-IR 분석을 통해 B-N 결합과 C-N 결합을 확인할 수 있었고, Raman 분석을 통하여 DLC의 특성을 분석하였다. 마모 거동에서는 BCN 막의 경우 0.6~0.8 정도의 friction coefficient를 나타내었고 Si-BCN 막은 0.3이하의 낮은 friction coefficient를 나타내었다. Hardness는 carbon의 함유량과 Ar 가스의 첨가 유무에 따라 각각을 측정하였고 이것은 BN 막 보다 향상된 값을 나타내었다.

• Bulletin of the Korean Chemical Society
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• v.16 no.11
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• pp.1067-1074
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• 1995

Reaction of arachno-S2B7H8- with either THF or 1,2-dimethoxyethane upon refluxing condition results in the formation of the previously known compound hypho-S2B7H10-. Protonation of hypho-S2B7H10- with HCl/Et2O generates hypho-2,5-S2B7H11 in good yield. This hypho-S2B7H10- anion has been employed to generate a series of new nido-, arachno-, and hypho-metalladithiaborane clusters. Reaction of the anion with Cp(CO)2FeCl results in direct metal insertion and the formation of a complex containing the general formula (η5-C5H5)FeS2B7H8. Spectroscopic studies of nido-6-CpFe-7,9-S2B7H8 Ⅰ demonstrated that compound Ⅰ was shown to have an nido-type cage geometry derived from an octadecahedron missing one vertex, with the iron atom occupying the three-coordinate 6-position in the cage and the two sulfurs occupying positions on the open face of the cage. Reaction of hypho-S2B7H10- with CoCl2/Li+[C5H5]- gave the previously known complex arachno-7-CpCo-6,8-S2B6H8 Ⅱ. Also, the reaction of the anion with [Cp*RhCl2]2 gave the complex arachno-7-Cp*Rh-6,8-S2B6H8 Ⅲ, the structure of which was shown to be that of complex Ⅱ. The similarity of the NMR spectra of Ⅱ and Ⅲ suggest that Ⅲ adopts cage structure similar to that previously confirmed for Ⅱ. A series of 9-vertex hypho clusters in which the sulfur atoms are bridged by different species isoelectronic with a BH3 unit, such as HMn(CO)4 or SiR2 have been prepared. Compounds Ⅳ,Ⅴ and Ⅵ are each 2n+4 skeletal electron systems and would be expected according to skeletal electron counting theory to adopt hypho-type polyhedral structures derived from an icosahedron missing three vertices. The complex hypho-1-(CO)4Mn-2,5-S2B6H9 Ⅳ was obtained by the reaction of the anion with (CO)5MnBr and has been shown from spectroscopic data to consist of a (CO)4Mn fragment bound to the two sulfur atoms S2 and S5 of hypho-S2B7H10-. Also, similar hypho-type complexes hypho-1-R2Si-2,5-S2B6H8 (R=CH3 Ⅴ, R=C6H5 Ⅵ) have been prepared from the reaction of hypho-S2B7H10- with R2SiHCl.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.391-392
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• 2012

In these days, the desire for the precise and tiny displays in mobile application has been increased strongly. Currently, laser displays ranging from large-size laser TV to mobile projectors, are commercially available or due to appear on the market [1]. In order to achieve a mobile projectors, the semiconductor laser diodes should be used as a laser source due to their size and weight. In this presentation, the continuous etch characteristics of Pd and AlGaN/GaN superlattice for the fabrication of blue laser diodes were investigated by using inductively coupled $CHF_3$ and $Cl_2$ -based plasma. The GaN laser diode samples were grown on the sapphire (0001) substrate using a metal organic chemical vapor deposition system. A Si-doped GaN layer was grown on the substrate, followed by growth of LD structures, including the active layers of InGaN/GaN quantum well and barriers layer, as shown in other literature [2], and the palladium was used as a p-type ohmic contact metal. The etch rate of AlGaN/GaN superlattice (2.5/2.5 nm for 100 periods) and n-GaN by using $Cl_2$ (90%)/Ar (10%) and $Cl_2$ (50%)/$CHF_3$ (50%) plasma chemistry, respectively. While when the $Cl_2$/Ar plasma were used, the etch rate of AlGaN/GaN superlattice shows a similar etch rate as that of n-GaN, the $Cl_2/CHF_3$ plasma shows decreased etch rate, compared with that of $Cl_2$/Ar plasma, especially for AlGaN/GaN superlattice. Furthermore, it was also found that the Pd which is deposited on top of the superlattice couldn't be etched with $Cl_2$/Ar plasma. It was indicating that the etching step should be separated into 2 steps for the Pd etching and the superlattice etching, respectively. The etched surface of stacked Pd/superlattice as a result of 2-step etching process including Pd etching ($Cl_2/CHF_3$) and SLs ($Cl_2$/Ar) etching, respectively. EDX results shows that the etched surface is a GaN waveguide free from the Al, indicating the SLs were fully removed by etching. Furthermore, the optical and electrical properties will be also investigated in this presentation. In summary, Pd/AlGaN/GaN SLs were successfully etched exploiting noble 2-step etching processes.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.142-147
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• 2005

The embrittlement of fast neutron-irradiated reactor pressure vessel (RPV) steels was investigated by X-ray diffraction patterns at room temperature and $M\ddot{o}ssbauer$ spectroscopy at room- and liquid nitrogen-temperature. Neutron fluence on the samples were $10^{12},\;10^{13},\;10^{14},\;10^{15},\;10^{16},\;10^{17},\;10^{18}\;n/cm^2$. The X-ray diffraction patterns showed that the structure of the neutron unirradiated sample was bcc type, where as but the neutron irradiated samples with the fluence higher than $10^{17}\;n/{\cal}cm^2$ were so severely damaged, that bcc type structure disappeared. The $M\ddot{o}ssbauer$ spectra of all samples showed superposition of two or more sextets. In this paper all $M\ddot{o}ssbauer$ spectra were fitted by three set of sextet. The isomer shift and quadrupole splitting values were found around zero. At liquid nitrogen temperature, magnetic hyperfine field and absorption area increase rapidly S 1 sextet in the samples of $10^{17}\~10^{18}\;n/{\cal}cm^2$ neutron fluences. And at room temperature, magnetic hyperfine field and absorption increased rapidly at SI sextet in the samples of $10^{17}\~10^{18}\;n/{\cal}cm^2$ neutron fluences. This rapid increase of magnetic hyperfine field and absorption area were inferred to be caused by the change of $^{56}Fe,\;^{55}Mn$ into $^{57}Fe$ due to by neutron irradiation.

• Journal of Microbiology and Biotechnology
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• v.30 no.2
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• pp.172-177
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• 2020

Influenza viruses cause respiratory diseases in humans and animals with high morbidity and mortality rates. Conventional anti-influenza drugs are reported to exert side effects and newly emerging viral strains tend to develop resistance to these commonly used agents. Fritillaria thunbergii (FT) is traditionally used as an expectorant for controlling airway inflammatory disorders. Here, we evaluated the therapeutic effects of FT extracts against influenza virus type A (H1N1) infection in vitro, in ovo, and in vivo. In the post-treatment assay, FT extracts showed high CC50 (7,500 ㎍/ml), indicating low toxicity, and exerted moderate antiviral effects compared to oseltamivir (SI 50.6 vs. 222) in vitro. Antiviral activity tests in ovo revealed strong inhibitory effects of both FT extract and oseltamivir against H1N1 replication in embryonated eggs. Notably, at a treatment concentration of 150 mg/kg, only half the group administered oseltamivir survived whereas the FT group showed 100% survival, clearly demonstrating the low toxicity of FT extracts. Consistent with these findings, FT-administered mice showed a higher survival rate with lower body weight reduction relative to the oseltamivir group upon treatment 24 h after viral infection. Our collective results suggest that FT extracts exert antiviral effects against influenza H1N1 virus without inducing toxicity in vitro, in ovo or in vivo, thereby supporting the potential utility of FT extract as a novel candidate therapeutic drug or supplement against influenza.

• Korean Journal of Veterinary Pathology
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• v.2 no.1
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• pp.17-24
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• 1998

This is the first report of c-Jun protein expression and mRNA in a pancreatic islet in a nonobese diabetic(NOD) state mice. In this experiment NOD mice with insulin-dependent diabetes mellitus type I at age 16 weeks(n=7) just before death(n=4) were used. The control group consist of prediabetic NOD(8 weeks n=7) and ICR(8 weeks n=7 and 16 weeks n=7) mice. c-Jun positive cells in the pancreatic islet of NOD mice were localized in the same positions as a-glucagon producing cells. immunoreactivity was negative in the prediabetic NOD(8 weeks) and ICR(8 weeks and 16 weeks) mice. The number of c-Jun positive cells in mice with severe diabetic state just before death were significantly decreased when compared to NOD(16 weeks) mice. Expression of c-Jun in mRNA level was assessed by RT-PCR method. The levels of mRNA in NOD(16 weeks) mice group were elevated in total pancreatic tissues. The present results suggest that the induction of proto-oncogene protein may be of significance in assessing cell specific injury and may play a functional role between pancretic islet $\alpha$-cells and $\beta$-cells in the diabetic state.

• Bulletin of the Korean Chemical Society
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• v.31 no.9
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• pp.2503-2508
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• 2010

ZnO thin films were grown on Si or $SiO_2$/Si substrates, at growth temperatures ranging from 150 to $400^{\circ}C$, by atomic layer deposition (ALD) using diethylzinc and water. Despite the large band gap of 3.3 eV, the ALD ZnO films show high n-type conductivity, i.e. low resistivity in the order of $10^{-3}\;{\Omega}cm$. In order to understand the high conductivity of ALD ZnO films, the films were characterized with X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, elastic recoil detection, Rutherford backscattering, Photoluminescence, and Raman spectroscopy. In addition, the various analytical data of the ZnO films were compared with those of ZnO single crystal. According to our analytical data, metallic zinc plays an important role for the high conductivity in ALD ZnO films. Therefore when the metallic zinc was additionally oxidized with ozone by a modified ALD sequence, the resistivity of ZnO films could be adjusted in a range of $3.8{\times}10^{-3}\;{\sim}\;19.0\;{\Omega}cm$ depending on the exposure time of ozone.