• Nuclear Engineering and Technology
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• v.36 no.1
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• pp.47-52
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• 2004

Recently, a new sintered pellet-type LiF:Mg,Cu,Na,Si TL detector which has a high sensitivity and good reusability, named KLT-300(KAERI LiF:Mg,Cu,Na,Si TL detector), was developed by the variation of the dopants concentrations and the parameters of the preparation procedure at KAERI (Korea Atomic Energy Research Institute). In this study, the thermoluminescent characteristics of the newly developed TL detectors were investigated. The sensitivity of the TL detector was compared with that of the TLD-100 by light integration. The dose linearity of the detector was tested from $10^{-6}$ Gy up to 30 Gy. The dose response was very linear up to 10 Gy and a sublinear response was observed at higher doses. The energy response of the detector was studied for photon energies from 20 keV to 662 keV. The result shows that a maximum response of 1.004 at 53 keV and a minimum response of 0.825 at 20 keV were observed. The reproducibility study for the TL detector was also carried out. The coefficients of variation for each detector separately did not exceed 0.016, and for all the 10 detectors collectively was 0.0054. Lower limit of detection for the detector was investigated at 70 nGy by the Harshaw 4500 TLD Reader and the residual signal of the TL detector was found to be $0.57\%$.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.4
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• pp.483-489
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• 1995

To investigate the mechanism generated by irradiation in the insulator layer irradiated MIS (Metal - Insulator - Semiconductor) device, the various types of MIS capacitors depending on insulator thickness, insulator types and implanted impurities are fabricated on the P-type wafer. MIS capacitors exposed by 1Mrad Co$^{60}$ .gamma.-ray are measured for flat band voltage and charge density shifts pre- and post-irradiation. The measuring results of post-irradiation show the flat band voltage shifting toward negative direction and charge density increasing regardless of parameters. This results have a good agreement with calculated data by computer simulation. Si$_{3}$N$_{4}$ layers have a good radiation-hardness than SiO$_{2}$ layers compared to the results of post-irradiation. Also, radiation-induced negative trap is discovered in the implanted insulator layer. Using numerical analysis, four continuty equations (conduction-band electrons continuity equation, valence-band holes continuity equation, trapped electrons continuity equation, trapped holes continuity equation) are solved and charge distributions according to the distance and Si-Insulator interface states are investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.222-222
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• 2012

Metal oxide gas sensors based on semiconductor type have attracted a great deal of attention due to their low cost, flexible production and simple usability. However, most works have been focused on n-type oxides, while the characteristics of p-type oxide gas sensors have been barely studied. An investigation on p-type oxides is very important in that the use of them makes possible the novel sensors such as p-n diode and tandem devices. Monoclinic cupric oxide (CuO) is p-type semiconductor with narrow band gap (~1.2 eV). This is composed of abundant, nontoxic elements on earth, and thus low-cost, environment-friendly devices can be realized. However, gas sensing properties of neat CuO were rarely explored and the mechanism still remains unclear. In this work, the neat CuO layers with highly ordered mesoporous structures were prepared by a template-free, one-pot solution-based method using novel ink solutions, formulated with copper formate tetrahydrate, hexylamine and ethyl cellulose. The shear viscosity of the formulated solutions was 5.79 Pa s at a shear rate of 1 s-1. The solutions were coated on SiO2/Si substrates by spin-coating (ink) and calcined for 1 h at the temperature of $200{\sim}600^{\circ}C$ in air. The surface and cross-sectional morphologies of the formed CuO layers were observed by a focused ion beam scanning electron microscopy (FIB-SEM) and porosity was determined by image analysis using simple computer-programming. XRD analysis showed phase evolutions of the layers, depending on the calcination temperature, and thermal decompositions of the neat precursor and the formulated ink were investigated by TGA and DSC. As a result, the formation of the porous structures was attributed to the vaporization of ethyl cellulose contained in the solutions. Mesoporous CuO, formed with the ink solution, consisted of grains and pores with nano-meter size. All of them were strongly dependent on calcination temperature. Sensing properties toward H2 and C2H5OH gases were examined as a function of operating temperature. High and fast responses toward H2 and C2H5OH gases were discussed in terms of crystallinity, nonstoichiometry and morphological factors such as porosity, grain size and surface-to-volume ratio. To our knowledge, the responses toward H2 and C2H5OH gases of these CuO gas sensors are comparable to previously reported values.

• Microbiology and Biotechnology Letters
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• v.11 no.3
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• pp.233-239
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• 1983

Bacillus thuringiensis was mutagenized with UV light irradiation and nitrosoguanidine. Twenty-four tem perature-sensitive ts mutants were isolated at 42$^{\circ}C$ and classified into two groups by growth on nutrient agar at 42$^{\circ}C$. First is the lethal group, which did not grow at the nonpermissive temperature, the second is the reduced group whose growth was restricted from one-half to one-fourth, Thirteen ts mutants belong to the lethal group and eleven ts mutants belong to the reduced group. Auxotrophic mutant, A-N28 required five amino acids as growth factors, A-N65 also five amino acids, A-N92 seven, A-N115 four and A-N156 three. Bacillus thuringiensis wild type is resistant to penicillin, ampicillin, and cephalothin. The ts-Ul7l, A-N92 and A-Nl15 are sensitive to the three antibiotics. The ts -U601, -U603, -U604 and -Ul71 did not grow at the permissive temperature after temperature-shifting from 42$^{\circ}C$. Four auxotrophic mutants (A-N38, A-N65, A-N92 and A-Nl15) did not form spores in their cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.333-333
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• 2016

현재까지 가장 높은 광전류 변환 효율을 나타내는 III-V 화합물 반도체의 다중접합 태양전지 대신 이보다 단순한 에피구조를 가진 단일셀 이종접합구조의 태양전지를 제안하였다. 이를 한국나노 기술원에서 MOCVD(Metalorganic Vapour Phase Epitaxy) 장비를 이용하여 에피구조를 성장하고 태양 전지를 제작해 그 특성을 조사하였다. 태양 전지는 서로 다른 orientation의 두 GaAs 기판에 각각 동일한 에피 구조로 성장되었다. GaAs 기판은 Si 도핑된 n-type 기판으로 (100) 표면이 <111>A 방향으로 2도 off 된 웨이퍼와 10도 off 된 웨이퍼가 사용되었다. 연구에서 시뮬레이션에 사용된 태양전지의 에피 구조는 맨 위 p-GaAs (p-contact 층), p-InAlP, p-InGaP의 광흡수층과 N-InAlGaP 층과 아래의 n-InAlP와 n-GaAs의 n-contact층으로 이루어져있다.태양전지는 $5mm{\times}5mm$의 면적을 가지고 있다. 그림 1은 전류-전압의 측정된 결과를 나타낸 그래프이다. 태양전지는 1 sun 조건하에서 probe를 이용해 측정되었다. 2도 off GaAs 기판 위에 성장시킨 태양전지에서는 3.7mA의 단락전류값이, 10도$^{\circ}$ off 인 샘플에서는 4.7mA의 단락전류값이 측정되었다. 반면에 전류-전압곡선으로부터 얻은 10도 off 인 태양전지의 직렬 저항값은 2도 off 인 태양전지의 약4배 정도로 나타났다. 이는 기판의 결정방향에 따라 태양전지의 내부 전하 transport에 차이가 있음을 나타낸다. TLM (Transmission Line Model) 방법에 의한 p-contact의 ohmic저항 측정에서도 이와 일치하는 결과를 얻었다.

• Journal of the Korean institute of surface engineering
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• v.34 no.2
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• pp.125-134
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• 2001

($Ti_{1-x}$ $Cr_{x}$ )N coatings were deposited by an ion-plating method in a reactor with two separate metal sources, Ti and Cr. Ti was evaporated using an electron beam, while Cr evaporation was carried out by resistant heating. The Ti and Cr concentrations in the coatings were controlled by the Ti and Cr evaporation ratio. The coating hardness increased with increasing the Cr content(x) and showed a maximum value of 6,000 HK at around x=0.8. The critical load of the coatings, measured by the scratch test, was around 30 N. The wear resistance properties of the ($Ti_{1-x}$$Cr_{ x}$)N coatings were evaluated using a CSEM pin-on-disk type tribometer. A Cr-steel ball as well as a SiC ball, which had hardness values of 590 HK and 2,600 HK respectively, were used as the pin. After the wear test, the surface morphology, roughness and the concentration of the coatings were investigated, with the main focus being on the effect of wear debris and the transferred layer on the wear behavior.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.442-443
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• 2007

Al-N co-doped ZnO films were fabricated on n-Si (100) and homo-buffer layers in the mixture of oxygen and nitrogen at $450^{\circ}C$ by magnetron sputtering. Target was ZnO ceramic mixed with $2wt%Al_2O_3$. XRD spectra show that as-grown and $600^{\circ}C$ annealed films are prolonged along crystal c-axis. However they are not prolonged in (001) plane vertical to c-axix. The films annealed at $800^{\circ}C$ are not prolonged in any directions. Codoping makes ZnO films unidirectional variation. XPS show that Al content hardly varies and N escapes with increasing annealing temperature from $600^{\circ}C\;to\;800^{\circ}C$. The electric properties of as-grown films were tested by Hall Effect with Van der Pauw configuration show some of them to be p-type conduction.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.126-126
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• 2000

다이아몬드상 카본(DLC) 필름은 경도가 높고, 마찰계수가 낮다는 장점을 가지고 있기 때문에 내마모성 코팅이나 윤활성코팅에 응용을 위한 연구가 활발히 진행중이다. 하지만 마찰계수가 주변환경에 매우 큰 영향을 받는다는 단점이 있다. 이러한 단점은 DLC필름의 응용에 대한 저해 요인이 되며, 이 점을 보완하기 위해서 DLC 필름에 Si을 첨가하는 연구들이 진행되고 있다. 본 실험에서는 r.f-PACVD 법을 이용하여 Si이 첨가된 DLC 필름의 주위 환경 변화에 따른 마찰특성의 변화를 연구하였다. 사용한 반응 가스는 벤젠(C6H)과 희석된 Silane(SiH4 : H2 = 10 : 90)이며, 희석된 Silane과 벤젠의 첨가비율을 조절하여 필름내 Si의 함량을 조절하였고, 증착시 바이아스의 전압은 -400V로 하였다. 마찰테스트는 Ball-on-Disk type의 조건에서 대기, 건조공기, 진공의 세가지 분위기에서 마찰테스트를 실행하였다. 실험결과 마찰계수는 건조공기, 대기, 진공의 순으로 증가하였고, 필름내에 포함되어 있는 Si의 양이 증가할수록 마찰계수는 낮고 안정한 값을 나타내었다. Tribochemiacal 분석과, ball과 track의 전자현미경 사진 분석 결과, 진공에 비해서 건조공기와 대기중에서 마찰계수가 낮은 것은 DLC 필름내에 마모 track 중심부에 Si-C-O 계의 화합물이 형성되어, 이 화합물이 마찰계면에 존재하여 마찰계수를 낮추었음을 확인하였다. 그리고 대기중에서 실험한 경우, 습기의 존재로 인해 마모입자가 볼의 표면에서 엉김으로써 건조공기의 상태에서 보다 높은 마찰저항을 갖게 됨으로 인하여 마찰계수가 높아짐을 알 수 있었다.a)는 as-deposit 상태이며, 그림 1(b)는 45$0^{\circ}C$, 60min 열처리한 plan-view TEM 사진이다.dical의 영향을 조사하였으며 oxygen radical의 rf power에 따른 변화는 OES(Optical emission spectroscopy)를 사용하였다. 너무 적은 oxygen ion beam flux나 oxygen radical은 film의 전도도 및 투과도를 저하시켰고 반면 너무 과도한 flux의 증가 시는 전도도는 감소하였고 투과도는 증가하는 경향을 보였다. 기판에 도달하는 oxygen ion flux는 faraday cup을 이용하여 측정하였으며 증착된 ITO film은 XPS, UV-spectrometer, 4-point probe를 이용하여 분석하였다. 때문으로 생각되어진다. 또한, 성장 온도가 낮아짐에 따라 AlGaN의 성장을 저해하기 때문으로 판단된다. 성장 온도 변화에 따라 성장된 V의 구조적 특성 및 표면 거칠기 변화를 관찰하여 AlGaN의 성장 거동을 논의하겠다.034, 0.005 정도로 다시 감소하였다. 박막의 유전율은 약 35 정도의 값을 나타내었으며 X-선 회절 data로부터 분석한 박막의 변형은 증온도에 따라 7.2%에서 0.04%로 감소하였고 이 이경향은 유전손실은 감소경향과 일치하였다.는 현저하게 향상되었다. 그 원인은 SB power의 인가에 의해 활성화된 precursor 분자들이 큰 에너지를 가지고 기판에 유입되어 치밀한 박막이 형성되었기 때문으로 사료된다.을수 있었다.보았다.다.다양한 기능을 가진 신소재 제조에 있다. 또한 경제적인 측면에서도 고부가 가치의 제품

• Korean Journal of Plant Tissue Culture
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• v.21 no.5
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• pp.253-275
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• 1994

Many flowering plants possess genetically controlled self -incompatibility (SI) system that prevents inbreeding and promotes outcrosses. SI is usually controlled by a single, multiallelic S-locus. In gametophytically controlled system, SI results when the S-allele of the pollen is matched by one of the two S-alleles in the style, while in the sporophytic system self-incompatible reaction occurs by the interaction between the pistil genotype and genotype of, not the pollen, but the pollen parent In the former system the self-incompatible phenotype of pollen is determined by the haploid genome of the pollen itself but in the latter the pollen phenotype is governed by the genotype of the pollen parent along with the occurrence of either to-dominant or dominant/recessive allelic interactions. In the sporophytic type the inhibition reaction occurs within minutes following pollen-stigma contact, the incompatible pollen grains usually failing to germinate, whereas in gametophytic system pollen tube inhibition takes place during growth in the transmitting tissue of the style. Recognition and rejection of self pollen are the result of interaction between the S-locus protein in the pistil and the pollen protein. In the gametophytic SI the S-associated glycoprotein which is similar to the fungal ribonuclease in structure and function are localized at the intercellular matrix in the transmitting tissue of the style, with the highest concentration in the collar of the stigma, while in the sporophytic SI deposit of abundant S-locus specific glycoprotein (SLSG).is detected in the cell wall of stigmatic papillae of the open flowers. In the gametophytic system S-gene is expressed mostly at the stigmatic collar the upper third of the style length and in the pollen after meiosis. On the other hand, in the sporophytic SI S-glycoprotein gene is expressed in the papillar cells of the stigma as well as in e sporophytic tape is cells of anther wall. Recognition and rejection of self pollen in the gametophytic type is the reaction between the ribonuclease in the transmitting tissue of the style and the protein in the cytoplasm of pollen tube, whereas in the sporophytic system the inhibition of selfed pollen is caused by the interaction between the Sycoprotein in the wall of stigmatic papillar cell and the tapetum-origin protein deposited on the outer wall of the pollen grain. The claim that the S-allele-associated proteins are involved in recognition and rejection of self pollen has been made merely based on indirect evidence. Recently it has been verified that inhibition of synthesis of S$_3$ protein in Petunia inflata plants of S$_2$S$_3$ genotype by the antisense S$_3$ gene resulted in failure of the transgenic plant to reject S$_3$ pollen and that expression of the transgenic encoding S$_3$ protein in the S$_1$S$_2$ genotype confers on the transgenic plant the ability to reject S$_3$ pollen. These finding Provide direct evidence that S-proteins control the s elf-incompatibility behavior of the pistil.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.208-212
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• 2008

This paper reports physical properties of in situ boron doped silicon films made from boron source gas and silane ($SiH_4$) gas in a conventional low-pressure chemical vapor deposition vertical furnace. If the p-type polysilicon is formed by boron implantation into undoped polysilicon, the plasma nitridation (PN) process is added on the oxide in order to suppress boron penetration that can be caused during the thermal treatments used in fabrication. In-situ boron doped polysilicon deposition can complete p-type polysilicon film with only one deposition process and need not the PN process, because there is not interdiffusion of dopant at the intermediate temperatures of the subsequent steps. Since in-situ boron doped polysilicon films have higher work function than that of n-type polysilicon and they are compatible with the underlying oxide, they may be promising materials for improving memory cell characteristics if we make its profit of these physical properties.