• 한국수학교육학회지시리즈B:순수및응용수학
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• 제11권2호
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• pp.167-173
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• 2004

Given vectors x and y in a separable Hilbert space $\cal H$, an interpolating operator is a bounded operator A such that Ax = y. In this article, we investigate Hilbert-Schmidt interpolation problems for vectors in a tridiagonal algebra. We show the following: Let $\cal L$ be a subspace lattice acting on a separable complex Hilbert space $\cal H$ and let x = ($x_{i}$) and y = ($y_{i}$) be vectors in $\cal H$. Then the following are equivalent; (1) There exists a Hilbert-Schmidt operator A = ($a_{ij}$ in Alg$\cal L$ such that Ax = y. (2) There is a bounded sequence {$a_n$ in C such that ${\sum^{\infty}}_{n=1}\mid\alpha_n\mid^2 < \infty$ and $y_1 = \alpha_1x_1 + \alpha_2x_2$ ... $y_{2k} =\alpha_{4k-1}x_{2k}$ $y_{2k=1} = \alpha_{4kx2k} + \alpha_{4k+1}x_{2k+1} + \alpha_{4k+1}x_{2k+2}$ for K $\epsilon$ N.

• 한국수학교육학회지시리즈B:순수및응용수학
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• 제15권4호
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• pp.401-406
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• 2008

Given operators X and Y acting on a separable complex Hilbert space H, an interpolating operator is a bounded operator A such that AX=Y. In this article, we investigate Hilbert-Schmidt interpolation problems for operators in a tridiagonal algebra and we get the following: Let ${\pounds}$ be a subspace lattice acting on a separable complex Hilbert space H and let X=$(x_{ij})$ and Y=$(y_{ij})$ be operators acting on H. Then the following are equivalent: (1) There exists a Hilbert-Schmidt operator $A=(a_{ij})$ in Alg${\pounds}$ such that AX=Y. (2) There is a bounded sequence $\{{\alpha}_n\}$ in $\mathbb{C}$ such that ${\sum}_{n=1}^{\infty}|{\alpha}_n|^2<{\infty}$ and $$y1_i={\alpha}_1x_{1i}+{\alpha}_2x_{2i}$$ $$y2k_i={\alpha}_{4k-1}x_2k_i$$ $$y{2k+1}_i={\alpha}_{4k}x_{2k}_i+{\alpha}_{4k+1}x_{2k+1}_i+{\alpha}_{4k+2}x_{2k+2}_i\;for\;all\;i,\;k\;\mathbb{N}$$.

• Journal of Advanced Marine Engineering and Technology
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• 제27권1호
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• pp.33-41
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• 2003

The optical properties of $ZnS_ySe_{1-\chi-y}:Te_{\chi}(\chi<0.08,y~0.11)$ alloys grown by molecular beam epitaxy (MBE) have been investigated by photoluminescence (PL) and PL-excitation (PLE) spectroscopy. Good optical properties and high crystal quality were established with lattice match condition to GaAs substrate. At room temperature, emission in the visible spectrum region from blue to green was obtained by varying the Te content of the ZnSSe:Te alloy. The efficient blue and green emission were assigned to $Te_1 and Te_n(n\geq2)$cluster bound excitons, respectively. Bright green (535 nm) and blue (462 nm) light emitting diodes (LEDs) have been developed using ZnSSe:Te system as an active layer. The turn-on voltage of 2.1 V in current-voltage characteristics is very small compared to that of commercial InGaN-based LEDs (>3.4 V), indicating the formation of a good ohmic contact due to the optimized p-ZnSe/p-ZnTe multi-quantum well (MQW) superlattice electrode layers.

• Bulletin of the Korean Chemical Society
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• 제30권2호
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• pp.419-422
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• 2009

The luminescence intensity of calcium sulfide codoped with $Eu^{2+},\;Si^{4+}\;and\;Ga^{3+}$ was investigated as a function of the dopant concentration. An enhancement of the red luminescence resulted from the incorporation of $Si^{4+}\;and\;Ga^{3+}\;into\;CaS:Eu^{2+}.\;The\;non-codoped\;CaS:Eu^{2+}$ converted only 3.0% of the absorbed blue light into luminescence. As the $Si^{4+}\;and\;Ga^{3+}$ were embedded into the host lattice, the luminescence intensity increased and reached a maximum of Q = 10.0% at optimized concentrations of the codopants in CaS. Optimized CaS:$Eu^{2+},Si^{4+},Ga^{3+}$ phosphors were fabricated with blue GaN LED and the chromaticity index of the phosphor-formulated GaN LED was investigated as a function of the wt% of the optimized phosphor.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.573-573
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• 2012

High quality $VO_2$ thin films were successfully grown on GaN substrate by optimizing oxygen partial pressure during the growth using RF sputtering technique. The $VO_2$ thin film grown on GaN substrate exhibited an unusual metal insulator transition behavior, which was known to be observed only either in doped sample or under uniaxial stress. Raman spectra also confirmed that metal insulator transition occurred from monoclinic M1 to rutile R phase via monoclinic M2 phase with increasing temperature. We believe that large lattice mismatch between $VO_2$ and GaN substrate may cause M2 phase to be thermodynamically stable. Optical transmittance and its electrical switching behavior were carefully investigated to elucidate the underlying physics of its metal insulator transition behavior. This study may lead to a unique opportunity to better understand the growth mechanism of M2 phase dominant $VO_2$ thin films.

• 대한수학회지
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• 제41권6호
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• pp.945-955
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• 2004

In this paper, we establish a number system in $R^n$ which arises from a Haar wavelet basis in connection with decompositions of certain Cuntz algebra representations on $L^2$( $R^n$). Number systems in $R^n$ are also of independent interest [9]. We study radix-representations of $\chi$ $\in$ $R^n$: $\chi$:$\alpha$$_{ι}$ $\alpha$$_{ι-1}$…$\alpha$$_1$$\alpha$$_{0}$ ㆍ$\alpha$$_{-1}$ $\alpha$$_{-2}$ … as $\chi$= $M^{ι}$$\alpha$$_{ι}$ $\alpha$＋…M$\alpha$$_1$＋$\alpha$$_{0}$ ＋ $M^{-1}$ $\alpha$$_{-1}$ ＋ $M^{-2}$ $\alpha$$_{-2}$ ＋… where each $\alpha$$_{k}$ $\in$ D, and D is some specified digit set. Our analysis uses iteration techniques of a number-theoretic flavor. The view-point is a dual one which we term fractals in the large vs. fractals in the small,illustrating the number theory of integral lattice points vs. fractions.s vs. fractions.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1407-1409
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• 2003

The results of investigations of $Ag_2Te$ crystal is presented. $Ag_2Te$ crystal was grown by the Bridgman method. The $Ag_2Te$ crystal was an monoclinic structure with lattice constance a = 8.1686, b=9.0425, c=8.0065. Hall effect shows a n-type conductivity in the $Ag_2Te$ crystal. The electrical resistivity values was $1.080e^{-3}cm$ and electron mobility was $-5.4810^{3}cm^{2}$/Vsec at room temperature(RT).

• 한국응용과학기술학회지
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• 제29권3호
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• pp.466-472
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• 2012

가시광선에 감응하는 광촉매를 제조하기 위하여 $TiO_2$에 질소(N)를 도핑하여 $N-TiO_2$를 제조하였다. 제조한 광촉매의 결정성, 입자 형상 및 도핑 상태는 XRD, FE-SEM 및 XPS를 이용하여 조사하였다. 제조한 광촉매의 활성 평가는 메틸렌블루의 광분해로 조사하였다. 제조한 광촉매는 anatase type이었으며, pH가 높을수록 결정화도가 향상되었다. 제조한 광촉매의 입자 크기는 pH 2.0에서 5.42 nm, pH 4.7에서 5.99 nm, pH 9.0에서 7.58 nm로, 입자 크기는 pH가 증가 할수록 약간씩 증가하였다. 광촉매의 활성은 결정화도에 비례하였다. $TiO_2$에 N를 도핑하여 제조한 $N-TiO_2$가 가시광선 하에서도 활성을 나타냈다. $TiO_2$에 도핑한 N는 격자 속에 존재하는 것이 아니라 표면에 존재하였다.

• 자원환경지질
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• 제29권4호
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• pp.523-528
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• 1996

In Korean topography the behaviors of random fractals and multifractality are analytically and numerically studied on the mountain heights shown between $128{\sim}129^{\circ}E$ and $37{\sim}38^{\circ}N$. The phase transitions on the fractal structure are approximately found at the critical length $N_c=2000m$ from the values of standard deviations that it varies with both the longitudinal and latitudinal lengths. In the multifractal structure we assume that the mountain heights divided by the intervals of 20 m are located on the horizontal plane in two dimensional square lattice, and estimate the values of the generalized dimension and the scaling exponents by using the the box counting method for the three cases of square area ($1{\times}1km^2$, $2{\times}2km^2$, $4{\times}4km^2$).

• 한국세라믹학회지
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• 제47권6호
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• pp.503-508
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• 2010

$Eu^{2+}$-doped $\beta$-SiAlONs ($Si_{6-z}Al_zO_zN_{8-z}:Eu_y$) are recognized as promising phosphor materials to build an white LED for lighting application due to its excellent absorption/emission efficiency in the long wave length region. In this research, the fabrication of $\beta$-SiAlON:Eu plate phosphor by sintering was investigated with fixed Eu content(y) and varied composition of the host lattice(z). The addition of the activator $Eu_2O_3$ lead to enhanced densification by forming the transient liquid phase. The refinement of a composition by the calculated lattice parameter indicated that the measured composition of the fabricated specimens is nearly same to that of designed one. The single phase $\beta$-SiAlON:Eu plate with relative density of 96.4% was achieved by addition of 2 wt% CaO, which implies the possibility of full densification by adjusting the processing variables.