• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• 한국초전도ㆍ저온공학회논문지
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• 제21권3호
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• pp.13-17
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• 2019

We investigate the effect of thermal annealing on $MgB_2$ thin films with thicknesses of 400 and 800 nm, irradiated by 350 keV C-ions with a dose of $1{\times}10^{15}atoms/cm^2$. Irradiation by low-energy C-ions produces atomic lattice displacement in $MgB_2$ thin films, improving magnetic field performance of critical current density ($J_c$) while reducing the superconducting transition temperature ($T_c$). Interestingly, the lattice displacement and the $T_c$ are gradually restored to the original values with increasing thermal annealing temperature. In addition, the magnetic field dependence of $J_c$ also returns to that of the pristine state together with the restoration of $T_c$. Because $J_c$(H) is sensitive to the type and density of the disorder, i.e. vortex pinning, the recovery of $J_c$(H) in irradiated $MgB_2$ thin films by thermal annealing indicates that low-energy C-ion irradiation on $MgB_2$ thin films primarily causes lattice displacement. These results provide new insights into the application of low-energy irradiation in strategically engineering critical properties of superconductors.

• 대한화장품학회지
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• 제36권2호
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• pp.99-103
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• 2010

왁스 또는 긴사슬을 가지는 탄화수소는 동물, 식물, 광물 또는 합성에 의해 만들어 진다. 오일-왁스 겔은 립스틱과 같은 다양한 화장품 분야에 사용되어지고 있다. 예를 들면, 립스틱의 사용감촉은 오일-왁스 겔의 광택 정도에 크게 영향을 받는다. 여러 논문에서 단일 용매 또는 혼합된 용매에서의 왁스 구조에 대해서 연구가 진행되었다. 그러나 왁스 구조에 대한 연구 논문은 극히 소수에 불과하다. 이 논문의 목적은 세레신 왁스와 또 다른 왁스를 사용하여 오일-왁스 겔에서의 광택과 왁스 구조에 대한 관계를 연구하였다. 최근 들어 입술피부에서의 광택 효과는 아름다움의 척도로 알려지고 있다. 광택효과는 오일-왁스 메트릭스가 형성될 때 메트릭스 구조의 변화와 오일의 성질에 의해 좌우된다. 최근 연구에서는 세레신 왁스와 마이크로크리스탈린 왁스로부터 얻어진 오일-왁스 겔에서의 왁스 구조변화와 그에 따른 광택에 대한 영향을 보고하고 있다.

• 한국자기공명학회논문지
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• 제2권1호
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• pp.1-23
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• 1998

The motions of carbon-chain backbone in n-undecance and n-dodecane dissolved in CDCl3 are investigated by 13C NMR relaxation study. For this purpose a model of C - C backbone motions for these molecules is introduced that takes into account the cooperativities between rotations about two $\beta$-coupled C - C bonds. In this model it is assumed that the major conformational interconversions occurring in the inner part of the chain involve the type II jumps only, although at terminal part of the chain both type II and type III motions are assumed to take place. Information of the rate constants of these conformational transitions could be extracted by comparing the T1's calculated on the basis of the assumed model with those observed over the temperature range of 248 - 308 K. The calculations were performed according to the method proposed by Wittebort and Szabo. The activation energies, ranging from ca 12 to 20 kJ/mol, could be obtained from the Arrhenius plots of these calculated rate constants.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.297.2-297.2
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• 2014

Strong exciton-photon coupling in microcavities have generated an intense research effort since quasiparticles called exciton polaritons are produced and shows interesting phenomena. Most of studies have been done with GaAs based microcavities at cryogenic temperature. Recently, GaN material which has large exciton binding energy and oscillator strength has much attention because strong coupling between photon and exciton could be realized at room temperature. However, fabrication of high quality microcavity using GaN is challengeable due to the large mismatch between the lattice and the thermal expansion coefficient in GaN based distributed Bragg mirror. Here, we observed strong coupling regime of exciton-photon in GaN micro-rods which were grown by metalorganic vapour phase epitaxy (MOCVD) on Si substrate. Owing to the hexagonal cross-section of micro-rod, whispering gallery modes of photon are naturally formed and could be coupled with exciton in GaN. Using angle-resolved micro-photoluminescence measurement, exciton polariton dispersion curves were directly observed from GaN micro-rod. We expect room temperature exciton polariton condensation could be realized in high quality GaN micro-rod.

• Progress in Superconductivity
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• 제11권2호
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• pp.87-91
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• 2010

We fabricated the polyacrylic acid (PAA)-doped $MgB_2$ bulks and characterized their lattice parameters, actual C substitutions, microstructures, and critical properties. The boron (B) powder was mixed with PAA using N,N-dimethylformamide as solvent and then the solution was dried out at $200^{\circ}C$ and crushed. The C treated B powder and magnesium powder were mixed and compacted by uniaxial pressing at 500 MPa, followed by sintering at $900^{\circ}C$ for 1 h in high purity Ar atmosphere. We observed that the PAA doping increased the MgO amount but decreased the grain size, a-axis lattice constant, and critical temperature ($T_c$), which is indicative of the C substitution for B sites in $MgB_2$. In addition, the critical current density ($J_c$) at high magnetic field was significantly improved with increasing PAA addition: at 5 K and 6.6 T, the $J_c$ of 7 wt% PAA-doped sample was $6.39\;{\times}\;10^3\;A/cm^2$ which was approximately 6-fold higher than that of the pure sample ($1.04\;{\times}\;10^3\;A/cm^2$). This improvement was probably due to the C substitution and the refinement of grain size by PAA doping, suggesting that PAA is an effective dopant in improving $J_c$(B) performance of $MgB_2$.

• Journal of applied mathematics & informatics
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• 제23권1_2호
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• pp.537-545
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• 2007

We investigate complemented Banach sublattices of the Banach envelope of $Weak_L1$. In particular, the Banach envelope of $Weak_L1$ contains a complemented Banach sublattice that is isometrically isomorphic to a nonseparable Banach lattice $l_p(S),\;1{\leq}p<{\infty}\;and\;|S|{\leq}2^{{\aleph}0}$.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.309.2-309.2
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• 2008

• Journal of Advanced Marine Engineering and Technology
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• 제33권2호
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• pp.322-329
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• 2009

Machinability of LAM(Laser Assisted Machining) has been studied for ceramics such as $Al_2O_3$, $Si_3_N4$ and $ZrO_2$ by $CO_2$ laser. It was possible to remove ceramics by PCBN tool because material became softening and deterioration by local laser beam irradiation. The advantage of LAM is the ability to produce larger material removal rates and tool life. But, for cutting of $Al_2O_3$ and $ZrO_2$, stage of laser power control was needed owing to thermal shock with high temperature of workpiece by laser power. And when $Si_3N_4$ was machined by LAM, $N_2$ gas spouted from surface of one cause of high temperature. Characteristics of LAM were analyzed using pyrometer, dynamometer, SEM and EDS to measure temperature of workpiece surface, cutting force, variation of machining surface and structure of lattice respectively. As the result of this study, it was found that machinability of LAM for ceramics in $CO_2$ laser and mechanism of LAM was different according to the kind of ceramics because of properties of materials.

• Progress in Superconductivity
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• 제13권3호
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• pp.178-183
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• 2012

Two $RuSr_2(EuCe)Cu_2O_z$ samples (as prepared and after $N_2$ treatment) have been investigated by thermogravimetric (TC) analysis, high-resolution x-ray powder diffraction and magnetization measurements. TG measurements which were carried out in $H_2/Ar$ atmosphere showed that the $N_2$ treatment of the as-prepared sample at $650^{\circ}C$ for 2h leads to a decrease in the oxygen content z by about 0.25. This oxygen depletion was accompanied by an increase in the magnetic transition temperature from 54.0 K to 114.9 K. This magnetic behavior is discussed in connection with the results of Rietveld analysis of the x-ray diffraction data which showed that the $N_2$ treatment resulted in both a significant increase in the rotation angle of the $RuO_6$ octahedra and a decrease in c-lattice parameter of the sample.