• Applied Microscopy
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• v.30 no.4
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• pp.337-345
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• 2000

Introduction of the buffer layer and the nitridation of a sapphire substrate were one of the most general methods employed for the reduction of lattice defects in GaN thin films Brown on sapphire by MOCVD. In an effort to improve the initial nucleation and growth condition of the GaN, reactive ion beam (RIB) of nitrogen treatment of the sapphire surface has been attempted. The 10 nm thick, amorphous $AlO_xN_y$ layer was formed by RIB and was partially crystallized alter the main growth of GaN at high temperature, leaving isolated amorphous regions at the interface. The beneficial effect of amorphous layer at interface in relieving the thermal stress between substrate and GaN film was examined by measuring the lattice strain value of the GaN film grown with and without the RIB treatment. Higher order Laue zone pattern (HOLZ) of $[\bar{2}201]$ zone axis was compared with simulated patterns and lattice strain was estimated It was confirmed that the great reduction of thermal strain was achieved by RIB process and the amount of thermal stress was 6 times higher in the GaN film grown by conventional method without the RIB treatment.

• Journal of the Korean Magnetics Society
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• v.18 no.5
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• pp.163-167
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• 2008

The electronic structure and magnetism of superlattice systems consisted of Heusler compound $Co_2MnSi$ (CMS) and zinc-blende MnAs (MA) are investigated by means of the all-electron full potential linearized augmented plane wave method within the generalized gradient approximation. Four superlattice systems are considered, that is CMS(m)/MA(n), where m and n, being either 2 or 4, denote the number of alternatingly arrayed layers of the compounds in a superlattice along [001] direction. From the calculated total magnetic moments as well as the total density of states, it is found that neither of the four systems is half-metallic. It is also found that the Mn atoms are antiferromagnetically coupled in the systems of CMS2/MA2 and CMS2/MA4. The total and atom-resolved density of states of the four superlattices are compared with those of the bulk $Co_2MnSi$ and MnAs, and the influences of the change in the systems symmetry on the magnetism and half-metallicity are discussed.

• Korean Journal of Optics and Photonics
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• v.6 no.2
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• pp.108-114
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• 1995

규칙적인 간격이 $M\timesN$ 이차원패턴과 임의 모양 빔 스폿을 발생시키기 위해 일반적인 이차원 Dammann 격자보다 재구성 에러가 작고, 높은 효율을 보이는 줄무늬형 격자를 설계하였다. 회절효율은 일반적인 이차원 Dammann 격자의 효율보다 평균 15-20% 정도 높은 60% 이상을 얻었다. 설계된 격자는 컴퓨터 시뮬레이션을 통해 회절특성을 확인하였으며 우수한 패턴 발생 결과가 확인되었다. $3\times3에서 11\times11$까지의 규칙적인 스폿 배열과 문자열에 대한 효율, 계산 시간 및 표준편차를 비교분석하였다.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.25 no.6
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• pp.525-532
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• 2012

The recently constructed buildings are ensuring seismic safety with enhanced design criteria. But, the buildings unapplied enhanced design criteria are very weak. In this study, steel grid shear wall is proposed as a solution of seismic retrofit to ensure safety of the existing buildings for the earthquake. And the structural performance experiments were carried out under axial force and cyclic lateral loads. The two specimens were made of a reference RC frame and steel grid shear wall in-filled RC frame. The test setup configured with two dynamic actuators, for the axial force with a 500kN capacity actuator and for the cyclic lateral load applied with the 2,000kN actuator. Compared with control specimen, the strength, stiffness, ductility, energy dissipation capacity of the seismic retrofit structures is evaluated.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.91-92
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• 2007

비대칭 마그네트론 스퍼터링을 이용하여 CrN / TaN 초격자 박막을 합성하였으며, 각층(bilayer)의 두께(${\lambda}$)를 4.3 nm에서 43 nm까지 제어하였다. X선 회절 패턴 분석 결과, 합성된 박막의 미세구조는 CrN (200) 방향과 TaN (200) 방향으로 성장하였으며, 각층의 두께 (${\lambda}$)에 따라 최대 31.2 GPa의 경도 값을 얻었다.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.109-112
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• 2008

The miniaturization of device size and submicron process causes serious problems in conventional metallization due to the solubility of silicon and metal at the interface, such as an increasing contact resistance in the contact hole and interdiffusion between metal and silicon. Moreover, the interaction between Cu and Si is so strong and detrimental to the electrical performance of Si even at temperatures below $200^{\circ}C$. Therefore it is necessary to implement a barrier layer between Cu and Si. So we study W-C-N diffusion barrier for prevent Cu diffusion as a function of $N_2$ gas flow and thermal stability. Especially, we also study the W-C-N diffusion barrier for analyzing the change of lattice constants.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.115-115
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• 2000

Wide band gap을 갖는 III-V족 반도체인 GaN는 파란색에서 자외선영역에 이르는 발광소자용으로, 그리고 최근에는 전자소자로도 가장 유망한 반도체 중의 하나이다. 하지만 격자상수가 일치하는 적당한 기판이 존재하지 않아 성장된 GaN 박막 내에는 많은 결함들이 존재하게 된다. 일반적으로 가장 널리 쓰이는 기판은 사파이어 기판이 주로 이용되고 있는데 사파이어는 GaN와 격자상수 불일치가 16%에 이르므로 고품질의 GaN 박막을 성장시키기 위해서는 격자상수 불일치를 어느 정도 완화시키면서 초기성장과정의 컨트롤이 매우 중요하다. 이러한 방법들로는 GaN박막 성장 전에 사파이어 기판 질화처리를 하거나 buffer 층을 도입하는 것인데, 이에 관한 많은 연구들이 보고되고 있다. 하지만 각각 두 공정에 관한 연구는 많이 되어 있지만 두 공정사이를 연결해 주는 공정처리법에 관한 연구는 보고되고 있지 않다. 따라서 본 연구에서는 사파이어기판 질화처리를 한 후 buffer 층을 성장시키기 전까지 chamer 내부의 분위기 가스가 GaN 박막성장 거동에 어떤 영향을 주는지에 관해 연구하였다. 질화처리 후 chamber 내부의 분위기 가스가 GaN 박막 성장 거동에 미치는 영향을 연구하기 위하여 두 개의 시편 A,B를 준비하였다. 시편 A는 먼저 사파이어 기판을 유기용매를 이용하여 cleaning 한 후 장비에 장입되었다. 수소분위기하에서 10nsrks 104$0^{\circ}C$에서 가열한 후 30초간 암모니아 유속을 900sccm으로 유지하며 사파이어 기판 질화처리를 수행하였다. GaN buffer 층을 성장하기 위하여 104$0^{\circ}C$에서 56$0^{\circ}C$로 온도를 내리는 과정중 질화처리를 위하여 흘려주었던 암모니아 유속을 차단한 채 수소분위기에서만 온도를 내렸다. 56$0^{\circ}C$에서 GaN buffer 층을 300 성장시킨 후 102$0^{\circ}C$의 고온에서 2$\mu\textrm{m}$ 두께로 GaN 박막을 성장하였다. 시편 B는 질화처리 후 단계부터 GaN 박막성장 단계에 이르기까지 AFM을 이용하여 두 시편의 성장거동을 비교 분석하였다. 두 시편의 표면을 관찰한 결과 시편 A는 2차원적 성장을 하며 매우 매끄러운 표면을 갖는데 반해, 시편 B는 3차원적 성장을 하며 매우 거친 표면을 보였다. 또한 두 시편 A, B를 XRD, PL, Hal 측정으로 분석한 결과 시편 A가 시편 B보다 우수한 구조적, 광학적, 전기적 특성을 보였다.

• 한국전자현미경학회:학술대회논문집
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• 1999.05a
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• pp.48-49
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• 1999

• Journal of the Korean Magnetics Society
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• v.3 no.2
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• pp.87-93
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• 1993

Iron nitride (Fe-N) magnetic thin films were deposited using a DC magnetron sputtering system. Microstructures and magnetic properties were examined as a function of deposition power and nitrogen gas input ratio. The nitrogen content in the film was found to be the major factor determining the microstructure and the magnetic properties. The films deposited at low nitrogen input ratios have an $\alpha$-Fe structure of which the lattice is expanded due to the nitrogen atoms incorporated at the interstitial sites. As the nitrogen content in the film increases, the degree of lat-tice expansion increases and the value of saturation magnetization decreases linearly. The films with a high degree of lattice expansion give very low values of coercivity, which is attributed to the disturbance of colunmar growth and the decrease of surface roughness. Further increase in the nitrogen input ratio causes the phase transfonnation from $\alpha$-Fe to $Fe_{2-3}N$, resulting in the marked reduction in the saturation magnetization. The phase transformation occurs when, regardless of deposition conditions, the nitrogen content reaches at 15 at.% and the lattice is expanded by 5%.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.32 no.5
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• pp.765-777
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• 2022

The SABER algorithm, a PKE/KEM algorithm presented in NIST PQC Standardization Round 3, is an algorithm based on the Module-LWR problem among lattice-based problems and has a Meta-PKE structure. At this time, the secret information used in the encryption process is called a ephemeral key, and in this paper, the ephemeral key reuse attack using the Meta-PKE structure is described. For each parameter satisfying the security strengths required by NIST, we present a detailed analysis of the previous studies attacked using 4, 6, and 6 queries, and improve them, using only 3, 4, and 4 queries. In addition, we introduce how to reduce the computational complexity of recovering ephemeral keys with a single query from the brute-force complexity on the n-dimension lattice, 2^7.91×n, 2^10.51×n, 2^12.22×n to 2^4.91×n, 2^6.5×n, 2^6.22×n, for each parameter, and present the results and limitations.