• Journal of the Korean Society of Surveying, Geodesy, Photogrammetry and Cartography
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• v.12 no.1
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• pp.107-118
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• 1994

As satellite altimetry is being progressed to apply with heigher precision to maginal seas, it was necessary to improve correction procedures for tidal signals in altimetry with more accurate tidal model than well-known model of Schwiderski for studying marginal sea dynamics. As a first step, tidal regime of semidiurnal tides$(M_2,\;S_2,\;N_2,\;K_2)$ and diurnal tides$(K_1,\;O_1,\;P_1,\;Q_1)$ were computed with a finer details of formulation of tidal model over the East Asian Marginal Seas covering the Okhotsk Sea and South China Sea and part of Northwest Pacific Ocean with mesh resolutions of 1/6$^{\circ}$. Subsequently the computed sets of harmonic constants from the model were used to remove the tide in selected Sea Surface Heights from Geosat in the modelled region. Preliminary correction procedure suggested in the present study may be extensively used for obtaining Sea Surface Topography over the East Asian Marginal Seas, especially for the region where Schwiderski's harmonic constants are not available.

• Journal of the Korean Chemical Society
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• v.40 no.3
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• pp.161-166
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• 1996

6-ethyl-5,6-dihydrouracil($C_6H_10N_2O_2$) is monoclinic, space group $$P2_{1}c}$$ with a=10.302(2), b=10.419(3), $c=7.095(1)\AA$, $\beta=106.6(0)$, Z=4, $V=729.7(3)\AA$^3$$, $D_c=1.29 g/cm^3,\;{\lambda}(MoK\alpha)=0.71073\AA$, $\mu=0.010cm^{-1}$, F(000)=304, and R=0.054 for 1070 unique observed reflection with F>4.0 $\sigma(F).$ The structure was solved by direct methods and refined by full-matrix least-squares refinement with the fixed C-H bond length at $0.96\AA.$ The hydrouracil molecule makes an envelope conformation with the ethyl substituent oriented to an axial position attainable to a varying degree of steric strain. There are two intermolecular hydrogen-bondings via N-H---O interactions, being nearly parallel to the 100 plane. The shortest distance between molecules is $3.187\AA$ of C(4) and O(8) (-x,-y, 1-z).

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.8
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• pp.387-391
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• 2006

The Ag photodoping effect in amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ chalcogenide thin films for holographic recording has been investigated using a He-Ne laser (${\lambda}$=632.8 nm). The chalcogenide films thickness prepared in the present work were thinner in comparison with the penetration depth of recording light ($d_p=1.66{\mu}m$). It exhibits a tendency of the variation of the diffraction efficiency (${\eta}$) in amorphous chalcogende films, independently of the Ag photodoping. That is, ${\eta}$ increases rapidly at the beginning of the recording process and reaches the maximum (${\eta}_{max}$) and slowly decreases slowly with the exposed time. In addition, the value of ${\eta}_{max}$ depends strongly on chalcogenide film thickness(d) and its maximum peak among the films with d = 40, 80, 150, 300, and 633 nm is observed 0.083% at d = 150 nm (approximately 1/2 ${\Delta}n$), where ${\Delta}$n is the refractive index of chalcogenide thin film (${\Delta}n=2.0$). The ${\eta}$ is largely enhanced by Ag photodoping into the chakogenides. In particular, the value of ${\eta}_{max}$ in a bilayer of 10-nm-thick Ag/150-nm-thick $As_{40}Ge_{10}Se_{15}S_{35}$ film is about 1.6%, which corresponds to ${\sim}20$ times larger than that of the single-layer $As_{40}Ge_{10}Se_{15}S_{35}$ thin film (without Ag). And we obtained the diffraction pattern according to the formation of (P:P) polarization holographic grating using Mask pattern and SLM.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.05a
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• pp.253-256
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• 2009

This paper describes a core generator (FFT_Core_Gen) which generates Verilog HDL models of 8 different FFT/IFFT cores with $N=64{\times}2^k$($0{\leq}k{\leq}7$ for OFDM-based communication systems. The generated FFT/IFFT cores are based on in-place single memory architecture, and use a hybrid structure of radix-4 and radix-2 DIF algorithm to accommodate various FFT lengths. To achieve both memory reduction and the improved SQNR, a conditional scaling technique is adopted, which conditionally scales the intermediate results of each computational stage, and the internal data and twiddle factor has 14 bits. The generated FFT/IFFT cores have the SQNR of 58-dB for N=8,192 and 63-dB for N=64. The cores synthesized with a $0.35-{\mu}m$ CMOS standard cell library can operate with 75-MHz@3.3-V, and a 8,192-point FFT can be computed in $762.7-{\mu}s$, thus the cores satisfy the specifications of wireless LAN, DMB, and DVB systems.

• Journal of the Korean Chemical Society
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• v.39 no.5
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• pp.421-426
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• 1995

The hydrogels of hydrophilic three-dimensional methacrylate polymer networks were prepared from 2-hydroxyethyl methacrylate (HEMA) and ethylene glycol dimethacrylate (EDGMA) in aqueous solution. The interaction of water with the hydrophilic methacrylate polymers in the hydrogels was studied by pulse NMR spectroscopy. The spin-lattice relaxation times (T1) of low water content hydrogels showed the different double environments, resulting in two spin-lattice relaxation times (T1a and T1b). The values of T1a and T1b were 16.4${\times}$10-3 sec and 58.2${\times}$10-3 sec for a p(HEMA)-(10% H2O) system, and 13.2${\times}$10-3 sec and 23.1${\times}$10-3 sec for a crosslinked EGDMA-p(HEMA)-(10% H2O) system, respectively. The spin-spin relaxation times (T2) of the hydrogels were also measured as a function of water content in the p(HEMA)-(H2O)n and crosslinked EGDMA-p(HEMA)-(H2O)n system. The values of T2 were approximately 10 times less than those of T1 in agreement with the principles of spin relaxations.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.96-113
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• 1996

It has been found that the misfit dislocations in heavily boron-doped layers originate from wafer edges. Moreover, the propagation of the misfit dislocation into a heavily boron-doped region can be suppressed by placing a surrounding undoped region. Using a surrounding undoped region the disloction-free heavily boron-deoped silicon membranes have been fabricated. The measured surface roughness, fracture strength, and residual tensile stress of the membrane are 20.angs. peak-to-peak, 1.39${\times}$10$^{10}$ and 2.7${\times}$10$^{9}$dyn/cm$^{2}$, while those of the conventional heavily boron-doped silicon membrane with high density of misfit dislocations are 500 peak-to-peak, 8.27${\times}$10$^{9}$ and 9.3${\times}$10$^{8}$dyn/cm$^{2}$ respectively. The differences between these two membranes are due to the misfit dislocations. Young's modulus has been extracted as 1.45${\times}$10$^{12}$dyn/cm$^{2}$ for both membranes. Also, the effective lattice constant of heavily boron-doped silicon, the in-plane lattice constant of the conventional membrane, and the density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as 5.424.angs. 5.426.angs. and 2.3${\times}$10$^{4}$/cm for the average boron concentration of 1.3${\times}$10$^{20}$/cm$^{-23}$ cm$^{3}$/atom. Without any buffer layers, a disloction-free lightly boron-doped epitaxial layer with good crsytalline quality has been directly grown on the dislocation-free heavily boron-doped silicon layer. X-ray diffraction analysis revealed that the epitaxial silicon has good crystallinity, similar to that grown on lightly doped silicon substrate. The leakage current of the n+/p gated diode fabricated in the epitaxial silicon has been measured to be 0.6nA/cm$^{2}$ at the reverse bias of 5V.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.19 no.5
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• pp.457-466
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• 2007

The effect of depth correction in the coastal sea has been investigated through a series of tide simulations in the area of $115{\sim}150^{\circ}E,\;20{\sim}52^{\circ}N$ of northwestern Pacific with $1/12^{\circ}$ resolution. Comparison of the solutions varying the minimum depth from 10m to 35 m with the 5m interval shows that the amplitude accuracies of $M_2,\;S_2,\;K_1$ tide using the minimum depth of 25 m have been improved up to 42%, 32%, 26%, respectively, comparing to those using the minimum depth of 10m. The discrepancy between model results using different minimum depth is found to be up to 20 cm for $M_2$ tidal amplitude around Cheju Islands and the positions of amphidromes are dramatically changed in the Bohai Sea. The calculated ARE(Averaged Relative Error) values have been minimized when the bottom frictional coefficient and the minimum depth is 0.0015 and 25 m, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.298-299
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• 2010

Cu(In, Ga)Se2 (CIGS) 박막 태양전지는 Soda lime glass/Mo/CIGS/CdS/ZnO/ITO/Al 의 구조를 가지고 있다. CIGS 화합물은 direct bandgap 구조를 하고 있으며, 광흡수율이 다른 어떤 물질들 보다 뛰어나 박막으로도 충분히 태양광을 흡수할 수 있다. 또한 Ga의 도핑 농도에 따른 밴드갭 조절도 가능하다. 이러한 성질들로 인해 현재 박막태양전지로서 20.1%의 최고효율을 가지고 있다.[1] CIGS 박막 태양전지에서 p-CIGS layer와 스퍼터링으로 증착되는 n-ZnO layer사이의 buffer 층으로 chemical bath deposition (CBD)-CdS 박막을 주로 사용한다. CBD-CdS 박막은 n-ZnO 스퍼터로 증착 시킬 때, CIGS 층의 손상을 최소화하고, 이 두 층 사이에서의 격자상수와 밴드갭의 차이를 줄여주어 CIGS 박막태양전지의 효율을 증가 시키는 역할을 한다. 하지만, Cd (카드뮴)의 심각한 독성과 낮은 밴드갭(2.4eV)으로 인해 CIGS 층에서의 광흡수율을 줄여, CdS를 대체할 새로운 buffer 층의 필요성이 대두되었다.[2] 그 대안으로 ZnS, Zn(O, S, OH), (Zn, Mg)O, In2S3 같은 물질이 연구되고 있다. 현재 CBD-ZnS를 buffer 층으로 사용한 CIGS 박막태양전지의 효율은 최고 18.6%로 CBD-CdS의 최고효율보다는 약 1.5% 낮지만, ZnS가 높은 밴드갭(3.7~3.8eV)과 Cd-free 물질이라는 점에서 CdS를 대체할 물질로 각광받고 있다. 본 연구에서는 기존의 CdS 박막을 제조하는 방법과 같은 방법인 CBD를 이용하여 ZnS 박막을 제조하였다. ZnS 박막을 제조하기 위해서는 Zinc sulfate, Thiourea, 암모니아가 사용된다. 암모니아의 mol 농도에 따른 CBD-ZnS/CIGS 박막태양전지의 효율 변화를 관찰하기 위해 암모니아의 mol 농도는 1 mol, 2 mol, 3 mol, 4 mol, 5 mol, 6 mol, 그 이상의 과량을 사용하여 실험하였다. 실험 결과, 암모니아농도 5 mol에서 효율 13.82%를 확인할 수 있었다. 최고효율을 보인 조건인 암모니아 농도가 5 mol 일 때, Voc는 0.602V, Jsc는 33.109mA/cm2, FF는 69.4%를 나타내었다.

• Korean Journal of Materials Research
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• v.11 no.2
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• pp.88-93
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• 2001

The thermal behavior and the crystallographic characteristics of an epitaxial $C49-TiSi_2$ island formed in a Si (001) substrate by $N_2$, treatment were investigated by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). It was found from the analyzed results that the epitaxial $C49-TiSi_2$ was thermally stable even at high temperature of $1000^{\circ}C$ therefore did not transform into the C54-stable phase and did not deform morphologically. HRTEM results clearly showed that the epitaxial $TiSi_2$ phase and Si have the orientation relationship of (060)[001]$TiSi_2$//(002)[110]Si, and the lattice strain energy at the interface was mostly relaxed by the formation of misfit dislocations. Furthermore, the mechanism on the formation of the epitaxial $_C49-TiSi2$ in Si and stacking faults lying on the (020) plane of the C49 Phase were discussed through the analysis of the HRTEM image and the atomic modeling.

• Elastomers and Composites
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• v.40 no.2
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• pp.136-142
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• 2005

Liquid crystalline poly(allylsulfone) networks having $SO_2$ in a main chain and mesogens in a side chain were synthesized and their gas permeability and permselectivity were determined. The monomer II having two allyl groups on the each end group was able to form polymer networks by polymerization reaction, while the monomer I having only one allyl group was not. Molecular motion of the poly(allylsulfone) networks were retarded with increasing the cross-linking density, and the segmental motion of networks was developed enough to show isotropic phase transition. Gas permeabilities of poly(II-5 $01/I-OCH_3$ 99) were 2.58 baller for $O_2$ and 18.4 barrer for $H_2$. It means that hydrogen gas are 7 times more permeable than oxygen. Its permselectivities were high as 23.9 for ${\alpha}(H_2/N_2)$. The permselectivity was increased with increasing the cross-linking density. For example, ${\alpha}(H_2/N_2)$ was 36.8 in poly(II-5 $10/I-OCH_3$ 90), which was shown to be the highest value among these poly(allylsulfone) networks.