• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.280.1-280.1
• /
• 2016

Generally InGaN/GaN green light emitting diode (LED) exhibits the low quantum efficiency (QE) due to the large lattice mismatch between InGaN and GaN. The QE of InGaN-based multiple quantum wells (MQWs) is drastically decreased when an emission wavelength shifts from blue to green wavelength, so called "green gap". The "green gap" has been explained by quantum confined Stark effect (QCSE) caused by a large lattice mismatch. In order to improve the QE of green LED, undoped graded short-period InGaN/GaN superlattice (GSL) and Si-doped GSL (SiGSL) structures below the 5-period InGaN/GaN MQWs were grown on the patterned sapphire substrates. The luminescence properties of InGaN/GaN green LEDs have been investigated by using photoluminescence (PL) and time-resolved PL (TRPL) measurements. The PL intensity of SiGSL sample measured at 10 K shows stronger about 1.3 times compared to that of undoped GSL sample, and the PL peak wavelength at 10 K appears at 532 and 525 nm for SiGSL and undoped GSL, respectively. Furthermore, the PL decay of SiGSL measured at 10 K becomes faster than that of undoped GSL. The faster decay for SiGSL is attributed to the increased wavefunction overlap between electron and hole due to the screening of piezoelectric field by doped carriers. These PL and TRPL results indicate that the QE of InGaN/GaN green LED with GSL structure can be improved by Si-doping.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.414-414
• /
• 2013

InGaAlAs/InP은 $1.3{\sim}1.55{\mu}m$ 레이저 다이오드 응용을 위한 InGaAsP/InP를 대체하기 위한 물질로 많은 관심을 받아왔다. 디지털 합금 InGaAlAs 다중양자우물(multiple quantum wells: MQWs) 시료는 MBE (molecular beam epitaxy) 장비를 이용하여 n-InP 기판 위에 성장하였다. 양자우물과 장벽은 각각 (InGaAs)0.8(InAlAs)0.2와 (InGaAs)0.4(InAlAs)0.6 SPSs (short-period superlattices)로 $510^{\circ}C$에서 성장하였다. 발광특성을 향상시키기 위하여 질소분위기에서 $700^{\circ}C$ $750^{\circ}C$ 또는 $800^{\circ}C$에서 30초간 열처리(rapid thermal annealing: RTA)하였다. RTA 온도에 따른 디지털 합금 InGaAlAs MQWs의 발광특성을 분석하기 위해 PL (photoluminescence)과 TRPL(time-resolved PL)을 이용하였다. RTA 온도에 따른 InGaAlAs MQWs 시료의 발광 메카니즘 및 운반자 동력학을 연구하기 위하여 발광파장 및 온도에 따른 TRPL을 측정하였다. 저온(10 K)에서 PL 피크는 RTA 온도를 $700^{\circ}C$에서 $750^{\circ}C$로 증가하였을 때 1,242 nm에서 1,245 nm로 장파장 영역으로 이동하였다가 $800^{\circ}C$에서 열처리하였을 때 단파장 영역으로 이동하여 1,239 nm에서 나타났다. 또한 PL 세기는 RTA 온도를 증가함에 따라 증가함을 보이다가 RTA 온도를 $800^{\circ}C$로 증가하였을 때 PL 세기는 감소하였다. 발광소자 개발을 위한 InAlGaAs MQWs 시료의 최적의 열처리 조건을 이러한 PL과 TRPL 결과로부터 결정할 수 있다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.118-119
• /
• 2013

High power, short wavelength red laser diodes (LDs) have attracted significant interests in a variety of fields due to their advantages in terms of reliability, compactness and cost. The higher brightness for human eyes is required, the shorter wavelength like 630 nm is necessary with higher output power. In this respect, LDs are promising as alternative candidates of gas or dye lasers for such applications due to their small size, high optical/electrical power conversion efficiency, robustness and so on. The crystalline quality of GaInP-AlGaInP multiple quantum wells (MQWs) and AlInP cladding layers is a crucial part in the device performance of GaInP red LDs. Here, we first investigated the effect of Si diffusion on the optical properties of GaInP-AlGaInP MQWs grown with different growth temperatures. Secondary ion mass spectroscopy (SIMS) measurements revealed that both the Mg and Si diffusion into MQW active region was significant. To reduce such diffusion, we employed undoped Mg and Si diffusion barrier and could improve the properties.Without both Mg and Si diffusion barriers, no lasing emission was observed. However, lasing emission was observed clearly for the red LDs with both Mg and Si diffusion barriers. We then investigated the temperature dependent optical properties of MQW layers grown with different well thicknesses (6, 8 and 10 nm). When the well thickness was 10 nm, the better crystalline quality was obtained. However, the observed LD performances were similar, probably due to the defects and impurities in the AlGaInP layer. Further investigation with the detailed analyses will be presented later.

• Journal of Microbiology and Biotechnology
• /
• 제21권12호
• /
• pp.1306-1311
• /
• 2011

Recombinant Rhodopseudomonas palustris, harboring the carotenoid-metabolizing gene crtI (CrtIBS), and whose color changes from greenish yellow to red in response to inorganic As(III), was cultured in transparent microplate wells illuminated with a light emitting diode (LED) array. The cells were seen to grow better under near-infrared light, when compared with cells illuminated with blue or green LEDs. The absorbance ratio of 525 to 425 nm after cultivation for 24 h, which reflects red carotenoid accumulation, increased with an increase in As(III) concentrations. The detection limit of cultures illuminated with near-infrared LED was 5 ${\mu}g$/l, which was equivalent to that of cultures in test tubes illuminated with an incandescent lamp. A near-infrared LED array, in combination with a microplate, enabled the simultaneous handling of multiple cultures, including CrtIBS and a control strain, for normalization by the illumination of those with equal photon flux densities. Thus, the introduction of a near-infrared LED array to the assay is advantageous for the monitoring of arsenic in natural water samples that may contain a number of unknown factors and, therefore, need normalization of the reporter event.

• Journal of Korean Neurosurgical Society
• /
• 제29권1호
• /
• pp.15-22
• /
• 2000

Objective : This study was undertaken to evaluate the benefits and risks of the stereotactic biopsy in brain lesions. We assessed the diagnostic accuracy and morbidity rate associated with the stereotactic biopsy. Methods : The authors present a review of 47 patients, who underwent stereotactic biopsy using Cosman-Roberts-Wells(CRW) stereotactic apparatus during last six years. Results : Target locations were supratentorial in 36 cases, infratentorial in 9 and multiple in 2. According to pathological diagnosis, the largest group was neoplasm(29) followed by infection(9), infarction(2), cyst(2), and non-specific(5). Definitive diagnosis could be made in 42 of 47 cases(89.4%). When the mass lesion had been suspected as neoplastic condition, the diagnostic rate was 96.7%(29/30). It was being much higher than that of non-neoplastic lesion, 76.5%(13/17). The treatment modality was changed in 15 cases(32%) because the result of stereotactic biopsy was different from clinical diagnosis. Subsequent craniotomy after stereotactic biopsy was then performed in 6 cases, and the pathological diagnoses were precisely coincident in all of these cases. There were two complications(4.3%) : One intratumoral hemorrhage in glioblastoma and a transient hemiparesis in benign astrocytoma. There was no mortality in this series. Conclusion : The precise histological verification is crucial to determine the adequate treatment modality in intracranial lesions. Stereotactic biopsy is a safe and accurate diagnostic procedure for intracranial lesions with a low complication rate.

• 대한영양사협회학술지
• /
• 제21권2호
• /
• pp.110-122
• /
• 2015

The purpose of this study was to investigate the correlation between food behavior and Attention Deficit Hyperactivity Disorder (ADHD) score in elementary students in Suwon-si, Gyeonggi-do. Two hundreds and thirty two students (113 male and 119 female) in grades 4~6 participated. We assessed food behavior by using Nutrition Quotient (NQ). NQ was examined by an NQ questionnaire, which consisted of 19 food behavior checklist items. Their items were grouped into five categories: balance, diversity, moderation, regularity, and practice. All data were statistically analyzed by SPSS 18.0. Among the five factors, NQ for food behavior and balance factor showed the lowest score, whereas that of diversity factor showed the highest score. The final Nutrition Quotient (NQ) score weighted on such five factors was 62.59 points. The average level of ADHD by Conners-Wells Adolescent Self-Report Scale (Short Form) [CASS(S)] was 17.02 points out of a total of 81 points. Six students (2.2%) who scored more than 41 points were classified as ADHD risk. By gender, male students (19.76 points) showed a higher CASS(S) score than female students (14.41 points) did. There was a significant negative correlation between NQ and CASS(S) score (r=-0.445, P<0.001). Multiple regression determined the effects of moderation ($Exp({\beta})=-0.193$, P<0.01) and practice ($Exp({\beta})=-0.345$, P<0.001) on CASS(S) score. In conclusion, distinctive nutritional education is needed for students with a high level of ADHD to help their understanding considering their different levels of attention.

• Journal of the Optical Society of Korea
• /
• 제20권1호
• /
• pp.130-134
• /
• 2016

The influence of Au/Ni-based contact formed on a lightly-doped (7.3×1017cm−3, Zn-doped) InGaAsP layer for electrical compensation of surface plasmon polariton (SPP) propagation under various rapid thermal annealing (RTA) conditions has been studied. The active control of SPP propagation is realized by electrically pumping the InGaAsP multiple quantum wells (MQWs) beneath the metal planar waveguide. The metal planar film acts as the electric contact layer and SPP waveguide, simultaneously. The RTA process can lower the metal-semiconductor electric contact resistance. Nevertheless, it inevitably increases the contact interface morphological roughness, which is detrimental to SPP propagation. Based on this dilemma, in this work we focus on studying the influence of RTA conditions on electrical control of SPPs. The experimental results indicate that there is obvious degradation of electrical pumping compensation for SPP propagation loss in the devices annealed at 400℃ compared to those with no annealing treatment. With increasing annealing duration time, more significant degradation of the active performance is observed even under sufficient current injection. When the annealing temperature is set at 400℃ and the duration time approaches 60s, the SPP propagation is nearly no longer supported as the waveguide surface morphology is severely changed. It seems that eutectic mixture stemming from the RTA process significantly increases the metal film roughness and interferes with the SPP signal propagation.

• 한국지하수토양환경학회:학술대회논문집
• /
• 한국지하수토양환경학회 2006년도 총회 및 춘계학술발표회
• /
• pp.303-306
• /
• 2006

Using a variety of chemical geothermometers we estimate the temperature of a deep geothermal reservoir in relation to thermal groundwater in the Bugok area, southern Korea, in order to assess the potential use of geothermal energy in South Korea. Thermal water at Bugok has been exploited down to about 400 m below the land surface and shows the highest outflow temperatures (up to $78{\circ}C$) in South Korea. Based on the hydrochemical data and occurrence, groundwater in Bugok can be classified into three groups: $Na-SO_4$ type thermal groundwater (CTGW) occurring in the central part (about 0.24 $km^2$) $Ca-HCO_3$ type cold groundwater (SCGW) occurring in shallow peripheral parts of CTGW; and the intermediate type groundwater (STGW). CTGW waters are typical of thermal water in the area, because they have the highest outflow temperatures and contain very high concentrations of Na, K and $SiO_2$ due to the sufficient reaction with silicate minerals in deep reservoir. Their enriched $SO_4$ was likely formed by gypsum dissolution. The major ion composition of CTGW shows the general approach to a partial equilibrium state with rocks at depth. The application of various alkali ion geothermometers yields temperature estimates in the range of 88 to $198{\circ}C$ for the thermal reservoir. Multiple mineral equilibrium calculation indicates asimilar but narrower temperature range between about 100 and $155{\circ}C$. These temperature estimates are not significantly higher than the measured outflow temperatures for CTGW Considering the heat loss during the ascent- of thermal waters, this fact may suggest that a thermal reservoir in the study area is likely located at relatively shallow depths (possibly close to the depth of preexisting wells). Therefore, we suggest a high potential for geothermal energy development around the Bugok area in southern Korea.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
• /
• pp.111-111
• /
• 2000

최근 질화물 반도체를 이용한 단파장 laser diode (LD)와 ultraviolet light emitting diode (LED)에 관한 관심의 증가로 인하여 AlGaN의 성장에 관한 연구가 많이 진행되고 있다. Metalorganic chemical vapor deposition (MOCVD)법을 이용한 AlGaN 성장에 있어서는 Al의 전구체로 널리 사용되고 있는 trimethylaluminum (TMAl)과 암모니아와의 기상에서의 adduct 형성을 억제하기 위하여 주로 저압에서 성장을 하거나 원료 가스의 유속을 증가시키는 방법으로 연구가 되고 있다. 또한, AlN의 경우 GaN보다 녹는점이 매우 높기 때문에 일반적으로 Al을 포함하는 질화물 반도체의 성장에 있어서는 GaN보다 녹는점이 매우 높기 때문에 일반적으로 Al을 포함하는 질화물 반도체의 성장에 있어서는 GaN 성장 시보다 높은 온도에서 성장이 이루어지고 있다. MOCND법을 이용하여 AlGaN를 성장시키는 대부분의 연구들은 100$0^{\circ}C$ 이상의 고온에서의 성장 온도가 AlGaN특성에 미치는 영향에 대한 것으로 국한되고 있다. 그러나, InGaN/GaN multiple quantum wells (MQWs) 구조의 LD나 LED를 성장시키는 경우 In의 desorption을 억제하기 위하여 MQWs층 위에 저온에서 AlGaN를 성장하는 데 있어서 AlGaN의 성장 온도를 500-102$0^{\circ}C$로 변화시키면서 AlGaN의 성장거동을 고찰하였다. GaN는 사파이어 기판을 수소분위기하에서 고온에서 가열한 후 저온에서 GaN를 이용한 핵생성층을 성장하고 102$0^{\circ}C$의 고온에서 1.2$\mu\textrm{m}$정도의 두께로 성장하였다. AlGaN는 고온에서 성장된 GaN 위에 200Torr의 성장기 압력 하에서 trimethylgallium (TMGa)과 TMAl의 유속을 각각 70 $\mu$mol/min 으로 고정한 후 성장온도만을 변화시키며 증착하였다. 성장 온도가 낮아짐에 따라 AlGaN의 표면거칠기가 증가하고, 결함과 관련된 포토루미네슨스가 현저히 증가하는 것이 관찰되었다. 그러나, 성장온도가 50$0^{\circ}C$정도로 낮아진 경우에 있어서는 표면 거칠기가 다시 감소하는 것이 관찰되었다. 이러한 현상은 저온에서 표면흡착원자의 거동에 제한이 따르기 때문으로 생각되어진다. 또한, 성장 온도가 낮아짐에 따라 AlGaN의 성장을 저해하기 때문으로 판단된다. 성장 온도 변화에 따라 성장된 V의 구조적 특성 및 표면 거칠기 변화를 관찰하여 AlGaN의 성장 거동을 논의하겠다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.144-144
• /
• 2008

Blue light emitting diode structures consisting of the InGaN/GaN multiple quantum wells were grown by metalorganic chemical vapor deposition at different growth temperatures for the p-GaN contact layers and the influence of growth temperature on the emission and microstructural properties was investigated. The I-V and electroluminescence measurements showed that the sample with a p-GaN layer grown at $1084^{\circ}C$ had a lower electrical turn-on voltage and series resistance, andenhanced output power despite the low photoluminescence intensity. Transmission electron microscopy (TEM) revealed that the intense electro luminescence was due to the formation of a p-GaN layer with an even distribution of Mg dopants, which was confirmed by TEM image contrast and strain evaluations. These results suggest that the growth temperature should be optimized carefully to ensurethe homogeneous distribution of Mg as well as the total Mg contents in the growth of the p-type layer.