• Journal of Magnetics
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• v.5 no.4
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• pp.116-119
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• 2000

Magnetic field dependence of magnetization reversal in Co/Pt multilayers was quantitatively investigated. Serial samples of Co/Pt multilayers were prepared by dc-magnetron sputtering under various Ar pressures. Magnetization reversal was monitored by magnetization viscosity measurement and direct domain observation using a magneto-optical microscope system, and the wall-motion speed V and the nucleation rate R were determined using a domain reversal model based on time-resolved domain reversal patterns. Both V and R were found to be exponentially dependent on the applied reversing field. From the exponential dependencies, the activation volumes for wall motion and nucleation could be determined, based on a thermally activated relaxation model, and the wall-motion activation volume was found to be slightly larger than the nucleation activation volume.

• Korean Journal of Materials Research
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• v.9 no.8
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• pp.837-842
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• 1999

The Ta/TaN multilayer structure with repeating layers of a poly-crystalline Ta layer of high ductility and a TaN layer of high hardness is expected to exhibit toughness. This paper reports the results on the hardness and the adhesion strength of Ta/TaN multilayers and compositional gradient Ta/TaN layers deposited on the high speed steel substrate by reactive sputtering as a function of annealing temperature. The TaN film deposited with the $N_2$/Ar ratio of 0.4 in the reactive sputtering process exhibits the highest crystallinity, and the highest hardness and the results of scratch test of the Ta/TaN multilayers. The hardness and adhesion strength of the Ta/TaN multilayers becomes deteriorated with increasing the annealing temperature in the heat treatment right after depositing the layers. Therefore, post-annealing treatments are not desirable in the case of the Ta/TaN multilayers from the standpoint of mechanical properties. Also the hardness of Ta/TaN multilayers increases with decreasing the compositional modulation wavelength, but the adhesion property of the layers is nearly independent of the wavelength. On the other hand, the compositional gradient Ta/TaN film exhibits the highest hardness and the value of scratch test for the post-annealing temperatures of 20$0^{\circ}C$ and 40$0^{\circ}C$, respectively. This tendency of the compositional gradient Ta/TaN films differs from that of the Ta/TaN multilayers.

• 한국생물공학회:학술대회논문집
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• 2000.04a
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• pp.572-575
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• 2000

The highly efficient photoelectric conversion of chlorophyll a (Chl a) monolayers and multilayers was investigated. Using the Langmuir-Blodgett (LB) technique, Chl a monolayers and multilayers were fabricated onto optically transparent electrode, such as ITO glass. The photocurrent could be observed according to the light illumination. The action spectrum of the Chl a LB films was well consistent with its absorption spectrum. The possible application of the proposed system as a constituent of the artificial color recognition device was suggested.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.191-199
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• 2000

The reflection-amplitude approximation is used to calculate the interlayer exchange coupling in (001) Co/Cu/Co multilayers. The dependence of the phase factor of the reflection amplitude on the energy and wave vector is included. The contribution of each period is calculated and the results are compared with those from the asymptotic behavior. It is shown that the energy and wave-vector dependence of the phase factor may affect the interlayer exchange coupling significantly.

• Journal of Magnetics
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• v.6 no.2
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• pp.43-46
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• 2001

The reflection-amplitude approximation is used to calculate the interlayer exchange coupling in (001) Co/Cu/Co multilayers. The dependence of the phase factor of the reflection amplitude on the energy and wave vector is included. The contribution of each period is calculated and the results are compared with those from asymptotic behavior. It is shown that the energy and wave-vector dependence of the phase factor may affect the interlayer exchange coupling significantly.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.14-15
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• 2002

Iron nitride alloy films prepared in the form of laminated ${(Fe_{97}Al_3)}_{85}N_{15}/Al_2O_3$ multilayers (Ml's) due to excellent soft magnetic properties and high saturation magnetization [1, 2] are very promising materials for poles and shields in ultra high density thin film heads. The present work concerns the ferromagnetic (FM) coupling effect as a function of the thickness of $Al_2O_3$ spacers by analysis of the magnetic domain structure.

• Macromolecular Research
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• v.15 no.3
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• pp.263-266
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• 2007

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.9A
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• pp.913-919
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• 2006

In this paper, TE(transverse electric) scattering problems by a resistive strip grating over grounded dielectric multilayers according to the strip width and grating period, the relative permittivity and thickness of dielectric multilayers, and incident angles of a TE plane wave are analyzed by applying the FGMM(Fourier-Galerkin Moment Method) known as a numerical procedure. The induced surface current density is simply expanded in a Fourier series by using the exponential function as a simple function. Generally, the relected power gets increased according as the relative permittivity and thickness of dielectric multilayers gets increased, the sharp variations of the reflected power are due to resonance effects that take place and were previously called wood's anomallies$^{[7]}$. To verify the validity of the proposed method, the numerical results of normalized reflected power for the uniform resistivity R = 0 as a conductive strip case show in good agreement with those in the existing paper.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.36-41
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• 2000

We studied the exchange anisotropy of Ni-Fe/Co-Fe/Mn-Ir/Cu/buffer/Si multilayers using D.C magnetron sputtering technique. Generally, Ni-Fe/Mn-Ir/buffer(Cu)/Si multilayers cannot pin the ferromagnetic layer for the lower exchange biased field. We got $H_{ex}$ ex/ increased by two times, after using Cu/Ta as buffer layer to get larger grain size of Mn-Ir layer and inserting very thin Co-Fe layer between the Ni-Fe layer and the Mn-Ir layer to get improved grain-to-grain epitaxy relation at the interface between Ni-Fe layer and Mn-Ir layer. The variation of $H_{ex}$ by thickness of Mn-Ir layer in ferromagnete/Mn-Ir/buffer/Si multilayers is different to that in Mn-Ir/ferromagnete/buffer/Si multilayers, because the volume distribution of grain size of Mn-Ir layer and the exchange energy at the interface between the Mn-Ir and the ferromagnetic layers is different for stacking sequence.

• Journal of the Korean Chemical Society
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• v.63 no.1
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• pp.37-44
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• 2019

N,N'-bis(ethyldihydrogen phosphate)-1,4,5,8-naphthalene bis(dicarboximide) (EPNI) and N,N'-bis(ethyldihydrogen phosphate)-3,4,9,10-perylene bis(dicarboximide) (EPPI) and their zirconium bisphosphate multilayers (Zr-EPNI and Zr-EPPI), that had been briefly reported by us, were further investigated in terms of their electrochemical properties. EPNI in aqueous solution showed typical two reversible reductions at ITO electrode but the reductions were strongly dependent on solution pH while EPPI showed only an irreversible reduction. The single and mixed multilayers of Zr-EPNI and Zr-EPPI were well constructed on ITO electrode by the alternate adsorptions of zirconium ion and the bisimides. While Zr-EPNI multilayer on ITO electrode showed single broad reversible reduction with $E_{1/2}=-0.68V$, Zr-EPPI gave two separated reductions at $E_{1/2}=-0.54$ and -0.81 V vs SCE, quite differently from the solution properties. The average layer densities of the multilayers were estimated as $1.5{\times}10^{-10}$ and $2.3{\times}10^{-10}mol/cm^2$ for Zr-EPNI and Zr-EPPI, respectively. Both the monolayers of Zr-EPNI and Zr-EPPI could not completely block the electron transfer between $Fe(CN){_6}^{3-}$ in solution and ITO electrode but 3-5 layers of Zr-EPNI and Zr-EPPI could block it completely and mediated the one-way electron transfer at the potential shifted to their reduction potentials. When the monolayer of zirconium 1,10-decanediylbisphosphonate (Zr-DBP) was used as a sublayer of Zr-EPNI and Zr-EPPI layers, the mediated electron transfer became prominent without any direct electron transfer.