• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.896-901
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• 2002

The polarization and strain behavior of multilayer ceramic actuators fabricated by tape casting using a PNN-PZT ceramics were investigated in association with electrode size and internal layer number. Spontaneous polarization and strain decreased with increasing electrode size. In addition, the increase of internal layer number brought reduced spontaneous polarization and increased the field-induced strain. Because the actuators structure is designed to stack ceramic layer and electrode layer alternatively, the ceramic-electrode interfaces may act as a resistance to motion of domain wall. To analyze the effect of ceramic-electrode interface, the diffraction intensity ratio of (002) to (200) planes was calculated from X-ray diffraction patterns of samples subjected to a voltage of 200 V. The diffraction intensity ratio of (002) to (200) planes was decreased with increasing electrode size and internal layer number. The diffraction intensity ratio and straining behavior analyses indicate that the Polarization and strain were affected by the amount of 90°domain decreasing with increasing electrode size and internal layer number. Consequently, the change of polarization and displacement with respect to electrode size and layer number is likely to be caused by readiness of the domain wall movement around the interface.

• Journal of Power Electronics
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• v.16 no.3
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• pp.1200-1208
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• 2016

Planar electromagnetic interference (EMI) filter has significant engineering significance to power electronic system integration and miniaturization. However, the value of differential mode capacitance cannot meet the demand of noise suppression because of the size limit of ceramics. In this case, the EMI filter of novel multilayers is recommended to address this issue. A novel integrated structure of EMI filter based on multilayer ceramic is proposed in this study. The inductance and capacitance of the new structure can be designed separately, which is an advantage in manufacturing. Insertion loss is measured more closely to the actual situation in this study, which is different from the condition where source and load impedances are both 50 Ω. In the process of designing a novel EMI filter, noise impedance is considered. Moreover, the prototype is created and applied to a small switching power supply, which verifies the effectiveness of the developed EMI filter.

• Korean Journal of Materials Research
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• v.20 no.9
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• pp.451-456
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• 2010

A promising candidate material for a $H_2$ permeable membrane is SiC due to its many unique properties. A hydrogen-selective SiC membrane was successfully fabricated on the outer surface of an intermediate multilayer $\gamma-Al_2O_3$ with a graded structure. The $\gamma-Al_2O_3$ multilayer was formed on top of a macroporous $\alpha-Al_2O_3$ support by consecutively dipping into a set of successive solutions containing boehmite sols of different particle sizes and then calcining. The boehmite sols were prepared from an aluminum isopropoxide precursor and heated to $80^{\circ}C$ with high speed stirring for 24 hrs to hydrolyze the precursor. Then the solutions were refluxed at $92^{\circ}C$ for 20 hrs to form a boehmite precipitate. The particle size of the boehmite sols was controlled according to various experimental parameters, such as acid types and acid concentrations. The topmost SiC layer was formed on top of the intermediate $\gamma-Al_2O_3$ by pyrolysis of a SiC precursor, polycarbosilane, in an Ar atmosphere. The resulting amorphous SiC-on-$Al_2O_3$ composite membrane pyrolyzed at $900^{\circ}C$ possessed a high $H_2$ permeability of $3.61\times10^{-7}$ $mol{\cdot}m^{-2}{\cdot}s^{-1}{\cdot}Pa^{-1}$ and the $H_2/CO_2$ selectivity was much higher than the theoretical value of 4.69 in all permeation temperature ranges. Gas permeabilities through a SiC membrane are affected by Knudsen diffusion and a surface diffusion mechanism, which are based on the molecular weight of gas species and movement of adsorbed gas molecules on the surface of the pores.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.747-749
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• 1992

In this study, $0.45Pb(Fe_{1/2}Nb_{1/2})O_3-(0.55-x)Pb(Fe_{2/3}W_{1/3})O_3-xPb(Mg_{1/3}Nb_{2/3})O_3(x=0.20, 0.25, 0.30)$ (x=0.20, 0.25, 0.30) ceramics were fabricated by the mixed oxide method. The sintering temperature and time were 950-990[$^{\circ}C$], 2[hr], respectively. The dielectric and structural properties with the composition and sintering temperature were investigated for the application as multilayer ceramic capacitors. To improve the dielectric loss, specimens doped with $MnO_2$, (0$\sim$2.0 [mol%] ) were fabricated and their dielectric properties were studied. With increasing the amount of $MnO_2$, dielectric constant was decreased and transition temperature was increased. Dielectric constant and dielectric loss of the 0.45PFN-0.30PFW-0.25PMN+$MnO_2$(1.0[mol.%]specimen(970[$^{\circ}C$]) had a good properties of 11,227, 1.3[%].

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.4
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• pp.9-17
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• 1998

BiNbO$_{4}$ ceramics with 0.07wt% V$_{2}$O$_{5}$ and 0.03wt% CuO (BNC3V7) sintered at 900 .deg. C where it is possible for these to be co-fired with ag electronde. Dielectric constant of 44.3 TCF (Thermal Coefficient of resonance Frequency) of 2 ppm/.deg. C and Qxf value 22,000 GHz can be obtained from BNC3V7. the laminatedchip LC filter is indispensible to the minimaturization of PCS (Personal Communication System) terminals. Therefore, multilayer type BPF has been fabricated by screen-printing with silver electrode after tape casting. The simulated characteristics of the fabricated filters sintered at 900.deg. C werecomparedwith the designed ones. for Band Pass Filter widths was similar that ofdesigned ones. For Low Pass Filter (LPF), insertion loss value of band pass widths (2.4 dB) which is a few higher than that of designed (1dB), but characteristization of band pass widths was similar that of designed ones.s.of designed ones.s.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.1-5
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• 2006

The effect of A/B moi ratios and sintering temperatures on dielectric properties and microstructure of $(Ba_{0.93}Ca_{0.07})_m(Ti_{0.82}Zr_{0.18})O_3$ ceramics were investigated. The dielectric constant decreased with increasing the A/B mol ratio. However, the dielectric loss is improved. As the dielectric properties of A/B mol ratio with m = 1.009 at sintered temperature $1260^{\circ}C$, we obtained dielectric constant 12,800, dielectric loss $3.5\%$ and Y5V temperature characteristics. Highly reliable Ni-MLCCs, 1.6mm$(length){\time}0.8mm(width){\time}0.8mm$(height) with capacitance of 1.23 ${\mu}F$ and 야ssipation loss of $5.2\%$ were obtained employing dielectric material composed of $(Ba_{0.93}Ca_{0.07})_{1.009}(Ti_{0.82}Zr_{0.18})O_3$ - $MnO_2\;0.2wt\%-Y_2O_3\;0.18wt\%,\;-\;SO_2\;0.15wt\%-(Ba_{0.4}Ca_{0.6})SiO_3\;1wt\%$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.975-978
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• 2003

The microwave dielectric properties and the microstructures on B $i_{0.97}$T $m_{0.03}$Nb $O_4$ doped with $V_2$ $O_{5}$ were systematically investigated. B $i_{0.97}$T $m_{0.03}$Nb $O_4$ ceramics sintered at 920-96$0^{\circ}C$ were mainly consisted of orthorhombic and triclinic phases after addition of $V_2$ $O_{5}$. The apparent density increased slightly with increasing the $V_2$ $O_{5}$ addition. The dielectric constants($\varepsilon$$_{r}$) also increased with $V_2$ $O_{5}$ addition(30-45). The Q${\times}$ $f_{0}$ values measured on B $i_{0.97}$T $m_{0.03}$Nb $O_4$ ceramics doped with $V_2$ $O_{5}$ were between 2,000 and 12,000[GHz] when the sintering temperatures were in the range of 920-960[$^{\circ}C$]. It was confirmed that the temperature coefficient of the resonant frequency($\tau$$_{f}$) can be adjusted from a positive value of +10ppm/$^{\circ}C$ to a negative value of -15ppm/$^{\circ}C$ by increasing the amount of $V_2$ $O_{5}$ Based on our experimental results, the B $i_{0.97}$T $m_{0.03}$Nb $O_4$(added $V_2$ $O_{5}$) ceramics can be applied to multilayer microwave devices at low sintering temperatures.ng temperatures.emperatures.ratures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.350-353
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• 2002

The microwave dielectric properties and the microstructures on $Bi_{0.97}Nb_{0.03}O_{4}$doped with $V_{2}O_{5}$ were systematically investigated. $Bi_{0.97}Tm_{0.03}Nb_{0.03}O_{4}$ ceramics sintered at $920-960^{\circ}C$were mainly consisted of orthorhombic and triclinic phases after addition of $V_{2}O_{5}$. The apparent density increased slightly with increasing the $V_{2}O_{5}$ addition. The dielectric $constants(\varepsilon_r)$ also increased with $V_{2}O_{5}$ addition(30-45). The $Q{\times}f_0$ values measured on $Bi_{0.97}Tm_{0.03}NbO_4$ ceramics doped with $V_{2}O_{5}$ were between 2,000 and 12,000[GHz] when the sintering temperatures are in the range of $920-960[^{\circ}C]$. It was confirmed the temperature coefficient of the resonant $frequency(\tau_f)$ can be adjusted from a positive value of $+10[ppm/^{\circ}C]$ to a negative value of $-15ppm/^{\circ}C$ by increasing the amount of $V_{2}O_{5}$. Based on our experimental results, the Bi0.97Tm0.03NbO4(added V2O5) ceramics can be applied to multilayer microwave devices at low sintering temperatures.

• Journal of the Korean Ceramic Society
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• v.31 no.9
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• pp.981-988
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• 1994

Crystallizable glasses with precipitation of celsian were prepared for the purpose of insulating dielectric layers for the devices such as integrated circuit substrates. Crystallization behavior of these glasses were studied by DTA, SEM, XRD analysis and by the measurement of dielectric properties. The base composition of the glass-ceramic consists in weight percent of 30% SiO2, 10% Al2O3, 26% BaO, 10% CaO, 10% ZnO, 8%TiO2 and 6% B2O3. 2-6 wt% Y2O3 were selected as the nucleating agent to promote monoclinic celsian formation. As a result, in barium-rich glasses containing 4~6wt% Y2O3 , monoclinic celsian was developed as major crystalline phase in the temperature range of 850~90$0^{\circ}C$. Also, the dielectric constant and quality factor of these glass-ceramics were about 9 and more than 1000, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.993-996
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• 2001

In the composition of 0.16BaO-0.15(Nd$\_$0.87/,Bi$\_$0.13/)$_2$O$_3$-0.69TiO$_2$$.$Glass [EG-2782] 3wt% addition sintered at 1080$^{\circ}C$, we could obtained microwave properties of dielectric constant $\varepsilon$$\_$r/= 80.1, quality factor Q ${\times}$ f = 810 (at 3.5 GHz]) and temperature coefficient of resonant frequency $\tau$$\_$f/ = -1.3 [ppm/$^{\circ}C$]