• ETRI Journal
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• v.28 no.3
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• pp.401-404
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• 2006

A new log-domain first-order multifunction filter is proposed in this letter. The proposed filter is systematically derived using the state-space synthesis procedure from a corresponding block diagram. It provides low-pass (LP), high-pass (HP), and all-pass (AP) responses simultaneously for a single input signal. The filter circuit has a very simple structure since it uses only bipolar junction transistors (BJTs) and a grounded capacitor. It can be electronically tuned by changing an external current. The filter has a greater bandwidth due to its inherent current-mode and log-domain operations. PSPICE simulations are given to confirm the theoretical analysis.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.333-336
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• 2002

An alternative CMOS implementation of a multi-output four-terminal floating nullor (FTFN) with constant-g$_{m}$ rall-to-rail input stage is proposed. This presented circuit is based on the advantages of a complementary transconductance amplifier and class AB dual translinear cell circuit that comes up with wide bandwidth. The constant-g$_{m}$ characteristic is controlled by the maximum-current selection circuits, maintaining the smooth response over the change of input common mode voltage. The circuit performances are confirmed through HSPICE simulations. A current-mode multifunction filter is used to exhibit the potentiality of this proposed scheme.eme.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.803-805
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• 1993

This paper describes the development of a digital multifunction controller for the protection, measurement and control of the high voltage customer switchboard. The magnitude of the fundamental component is estimated using a simple filter based on cross-correlation with a heptagonal wave. The characteristics of flexible relay functions such as adjustable pickup and time-dial settings, various time-magnitude curve and directional capability including measurement functions are presented. The controller implementation is carried out on two microprocessors for real time operation.

• Polymer(Korea)
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• v.35 no.1
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• pp.87-93
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• 2011

We developed a fluorene-containing multifunctional binder polymer for LCD color filter resist, and employing the binder polymer, carbon black based black photoresist (CBR) was prepared in order to apply it to the black matrix (BM). To obtain the multifunction of the binder polymer, we synthesized bisphenol fluorene epoxy acrylate-containing unsaturated polyester and identified the binder polymer structure with $^1H$ NMR, GPC and FTIR. The corresponding BFEA-polyester binder polymer was compared with the commercially available acryl binder toward the application to the CBR. From the BM lithography test, we found that the synthesized BFEA-polyester binder had better photocrosslinking capability and alkali solubility. In addition, the newly developed binder gave a good process margin, good resolution and adhesion property on a glass substrate.

• The Bulletin of The Korean Astronomical Society
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• v.36 no.2
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• pp.125.2-125.2
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• 2011

We are developing medium resolution cross-dispersed silicon grisms in the near IR region ($1.45{\sim}5.2{\mu}m$). The grisms will be installed in MIMIR, a multifunction instrument at the Lowel Observatory, USA. The two devices are designed to cover H and K band and L and M band simultaneously. Our goal is to make grism with R=3000 at 1.2 arcsec slit. The Silicon has high refractive index (n=3.4 at $1.5{\mu}m$) which enhances the resolving power by up to 5 times when compared to conventional material such as BK-7 (n=1.5 at 1.5 ${\mu}m$). The bonded grisms will be installed in a filter wheel for the uses switch from spectroscopic mode to imaging mode easily. Our device is compact and light weighted while it provides a decent resolving power. We produce monolithic grisms using e-beam lithography at the NASA JPL and chemically etching the grooves on the silicon prisms. Moreover, the main-disperser and cross-disperser will be contacted together by direct Si-Si bonding technique and eventually turn into one piece. The bonded pair offers more stability in terms of the layout of the spectrum and removes the Fresnel loss at the intersection of two grisms. We report on the proper wafer bonding steps through this research, and inspected the bonding quality thermally, optically and mechanically.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.12
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• pp.6-13
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• 2009

For X-band phased array systems, a power amplifier, a 6-bit phase shifter, a 6-bit digital attenuator, and a SPDT transmit/receive (T/R) switch are fabricated and measured. All circuits are demonstrated by using CMOS 0.18 um technology. The power amplifier has 2-stage differential and cascade structures. It provides 1-dB gain-compressed output power ($P_{1dB}$) of 20 dBm and power-added-efficiency (PAE) of 19 % at 8-11 GHz frequencies. The 6-bit phase shifter utilizes embedded switched filter structure which consists of nMOS transistors as a switch and meandered microstrip lines for desired inductances. It has $360^{\circ}$ phase-control range and $5.6^{\circ}$ phase resolution. At 8-11 GHz frequencies, it has RMS phase and amplitude errors are below $5^{\circ}$ and 0.8 dB, and insertion loss of $-15.7\;{\pm}\;1,1\;dB$. The 6-bit digital attenuator is comprised of embedded switched Pi-and T-type attenuators resistive networks and nMOS switches and employes compensation circuits for low insertion phase variation. It has max. attenuation of 31.5 dB and 0.5 dB amplitude resolution. Its RMS amplitude and phase errors are below 0.4 dB and $2^{\circ}$ at 8-11 GHz frequencies, and insertion loss is $-10.5\;{\pm}\;0.8\;dB$. The SPDT T/R switch has series and shunt transistor pairs on transmit and receive path, and only one inductance to reduce chip area. It shows insertion loss of -1.5 dB, return loss below -15 dB, and isolation about -30 dB. The fabricated chip areas are $1.28\;mm^2$, $1.9mm^2$, $0.34\;mm^2$, $0.02mm^2$, respectively.