• 동력기계공학회지
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• 제17권6호
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• pp.63-72
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• 2013

The main purpose of this study is to analyze the collection characteristics of multi-layer multi-stage porous plate system with ionizer and dielectric-substance experimentally. The experiment is carried out to analyze the characteristics of pressure drop and collection efficiency for the present system with experimental parameters such as applied voltage, inlet velocity, stage number and inlet particle concentration, etc. In results, for multi-layer multi-stage porous plate system of inflow type, at 5 stage and $v_{in}$=2.58 m/s, the pressure drop becomes lower 15 $mmH_2O$ as 95 $mmH_2O$ than that of non-inflow type system. It is estimated that for the present system with ionizer and dielectric-substance, the collection efficiency represents 98.5% showing higher 5.2% comparing to that of multi-layer multi-stage porous plate system without ionizer and dielectric-substance at 5 stage, $v_{in}$=2.58 m/s and inlet concentration $3g/m^3$(fly ash).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.388-389
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• 2005

In this paper, the electric properties of mercury Iodide multi-layer samples has been investigated. We measured and analyzed their performance parameters such as the X-ray sensitivity and dark-current for a mercury Iodide multi-layer X-ray detector with a dielectric layer. The digital X-ray image detector can be constructed by integrating photoconduction multi-layer that dielectric layer has characteristics of low dark-current, high X-ray sensitivity. However this process has found to have complexity on the performance of the sample. We have investigate dielectric layer that it substitute dielectric layer for HgO(Mercury Oxide). We have employed two approaches for producing the mercury Iodide sample : 1) Physical Vapor Deposition(PVD) and 2) Particle-In-Binder(PIB). In this paper fabricated by PIB Method with thicknesses ranging from approximately 180um to 240um and we could produce high-quality samples for each technique particular application. As results, the dielectric materials such as HgO between the dielectric layer and the top electrode may reduce the dark-current of the samples. Mercury Iodide multi-layer having HgO has characteristics of low dark-current, high X-ray sensitivity and simple processing. So we can acquired a enhanced signal to noise ratio. In this paper offer the method can reduce the dark-current in the X-ray detector.

• 전자공학회논문지A
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• 제29A권9호
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• pp.46-55
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• 1992

본 논문에서는 다층유전체 구조를 갖는 VLSI interconnection line 에 대한 커페시턴스를 계산하기 위한 방법을 제안한다. 이 방법은 단일 유전체 구조에서 개발한 3차원 직접 적분방법을 확장한 것이다. 다층유전체에 의한 영향은 Green's function을 수정하는 대신에 경계조건을 추가함으로써 고려하였다. 여기서 사용한 경계조건은 line 표면에서는 전위에 대한 식을 사용하였고, 유전체 경계면ㅇ서는 전계에 대한 식을 사용하였다. 이 방법으로부터 얻어진 커패시턴스를 이용하여 다층유전체 구조에서의 interconnection line에 대한 RC 지연시간의 값을 구했다. 이때 사용한 interconnection 물질은 Al과 WSi-이다.

• 한국항행학회논문지
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• 제16권6호
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• pp.1038-1043
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• 2012

본 연구에서는 재구성 RF 회로 설계 응용을 위해 BZN/BST/BZN 다층 유전체를 이용한 고-가변 커패시터를 설계 및 그 특성을 측정하였다. 고-가변 특성의 BST계 강유전체와 저-손실 특성의 BZN계 상유전체를 이용하여 47%의 가변성과 0.005의 $tan{\delta}$ 값을 갖는 저-손실 고-가변 BZN/BST/BZN 다층 유전체를 제작하였다. 이 다층 유전체를 이용하여 quartz 기판 위에 $327{\times}642{\mu}m2$ 크기로 제작된 가변 커패시터 칩은 15 V의 인가전압과 800 MHz 주파수에서 Q-factor가 10이고 60 %의 가변율을 달성하였다.

• 대한전자공학회논문지TC
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• 제41권12호
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• pp.131-137
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• 2004

본 논문에서는 등각사상 법을 이용해 유전체가 다층으로 코팅된 평행 2선식 전송선로의 특성임피던스 및 유효 유전상수 등을 계산하는 방법을 제안하였다. 먼저 두께 및 유전상수가 다른 유전체가 임의의 N 층으로 코팅되었을 때 평행 2선식 전송선로의 정전용량을 계산하였으며, 이를 이용해 임피던스 및 유효 유전상수 등을 계산하였다. Ansoft 사의 Maxwell 2D를 이용한 시뮬레이션 결과와 비교하였을 때, 계산 결과가 오차범위 4% 이내로 거의 일치함을 알 수 있었다.

• E2M - 전기 전자와 첨단 소재
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• 제7권2호
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• pp.145-151
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• 1994

The multi-dielectric layer SiOz/Si3N4/SiO2(ONO) is used to scale down the memory device. In this paper, the change of composition in ONO layer due to the process condition and the conduction mechanism are observed. The composition of the oxide film grown through the oxidation of nitride film is analyzed using auger electron spectroscopy(AES). AES results show that oxygen concentration increases at the interface between oxide and nitride layers as the thickness -of the top oxide layer increases. Results of I-V measurement show that the insulating properties improve as the thickness of the top oxide layer increases. But when the thickness of the nitride layer decreases below 63.angs, insulating peoperties of film 28.angs. of top oxide and film 35.angs. turn over showing that insulating property of film 28.angs. of top oxide is better than that of film 35.angs. of top oxide. This phenomenon of turn over is thought as the result of generation of surface state due to oxygen flow into nitride during oxidation process. As the thickness of the top oxide and nitride increases, the electrical breakdown field increases, but when the thickness of top oxide reaches 35.angs, the same phenomenon of turn over occurs. Optimum film thickness for scaled multi-layer dielectric of memory device SONOS is estimated to be 63.angs. of nitride layer and 28.angs. of top oxide layer. In this case, maximum electrical breakdown field and leakage current are 18.5[MV/cm] and $8{\times}{10^-12}$[A], respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• 전기학회논문지
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• 제60권2호
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• pp.431-434
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• 2011

In this paper, bandwidth enhanced design of dielectric resonator antenna fabricated in multi-layer substrate is introduced. The proposed dielectric resonator antenna is operating with fundamental TE101 mode and higher-order TM111 mode. Each resonance frequency is dependent on resonator dimensions. As increasing the height of radiating aperture, the higher-order TM111 mode resonance frequency approach the fundamental TE101 mode resonance frequency and the antenna bandwidth increase by double resonance. Three different aperture height size antennas that operated at 7GHz are fabricated in FR4 multi-layer substrate. Measured 10 dB matching bandwidth is 8 percent for single resonace antenna and 18 percent for double resonance antenna.

• E2M - 전기 전자와 첨단 소재
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• 제7권3호
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• pp.231-235
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• 1994

The multi-dielectric layer $SiO_2$/$Si_3{N_4}$/$SiO_2$ (ONO) is used to improve charge retention and to scale down the memory device. The nitride layer of MNOS device is oxidize to form ONO system. During the oxidation of the nitride layer, the change of thickness of nitride layer and generation of interface state between nitride layer and top oxide layer occur. In this paper, effects of oxidation of the nitride layer is studied. The decreases of the nitride layer due to oxidation and trapping characteristics of interface state of multi layer dielectric film are investigated through the C-V measurement and F-N tunneling injection experiment using SONOS capacitor structure. Based on the experimental results, carrier trapping model for maximum flatband voltage shift of multi layer dielectric film is proposed and compared with experimental data. As a results of curve fitting, interface trap density between the top oxide and layer is determined as being $5{\times}10^11$~$2{\times}10^12$[$eV^1$$cm^2$].

• Applied Microscopy
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• 제46권3호
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• pp.155-159
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• 2016

This paper analyses the relationship between the distribution of a dielectric layer on the apex of a metal field electron emitter and the distribution of electron emission. Emitters were prepared by coating a tungsten emitter with a layer of epoxylite resin. A high-resolution scanning electron microscope was used to monitor the emitter profile and measure the coating thickness. Field electron microscope studies of the emission current distribution from these composite emitters (Tungsten-Clark Electromedical Instruments Epoxylite resin [Tungsten/CEI-resin emitter]) have been carried out. Two forms of image have been observed: bright single-spot images, thought to be associated with a smooth substrate and a uniform dielectric layer; and multi-spot images, though to be associated with irregularity in the substrate or the dielectric layer.