• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.427-430
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• 2003

The properties of digital X-ray detectors depend on the absorption extent of X-rays, the generated signal of each X-ray photon and the distribution of the generated signal between pixels. In digital X-ray detector with single layer, signal is generated by X-ray photon captured in photoconductor. In X-ray detector with multi structure that scintillator formed above the top of photoconductor, signal is generated both by X-ray photon captured each in scintillator and photoconductor. X-ray detector with multi structure is generated more signal than single layer detector. In this paper, we simulated absorption fraction of X-ray detector with multi-layer using Monte Carlo program. The results compared with single-layer detector to be formed scinillator or photoconductor.

• Korean Journal of Optics and Photonics
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• v.17 no.1
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• pp.75-80
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• 2006

We studied feasibility of three-dimensional optical memory by utilizing femtosecond laser-induced changes of transmission in photopolymers and photoluminescence in Eu and Sm ion doped sodium borate glasses. We produced transmission change by two photon absorption and obtained sub-Um size spots in photopolymers using 780 nm modelocked Ti-sapphire laser pulses. We also changed valence state of Eu and Sm ions by multi-photon absorption and achieved $\~{\mu}m$ sized spot formation in Sm-doped glasses.

• Bulletin of the Korean Chemical Society
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• v.14 no.5
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• pp.610-614
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• 1993

Laser induced impedance changes in hollow cathode lamps containing sputtered metal atoms have been employed to measure the spectroscopic properties of metal. This technique, known as optogalvanic spectroscopy, has been shown to be a powerful and inexpensive technique for the investigation of atomic and molecular species. Characteristic optogalvanic signals from hollow cathode lamps (HCL) made of different metal species and induced with a pulsed dye laser were observed, and the dependence of the optogalvanic signal on the discharge current and wavelength of laser was measured. Based on the results obtained, the mechanisms involved in evoking the optogalvanic signals were consisted of single-photon absorption, multi-photon absorption, and photoionization. Moreover the current dependence of the optogalvanic signal indicates that the optogalvanic technique could be one of the most sensitive optical methods of detecting atomic species.

• ETRI Journal
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• v.18 no.4
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• pp.315-338
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• 1997

We extend our previous theoretical analysis of electronic and optical properties of p-type quantum well structures based on the two heavy- and light-hole system to include all the three valence bands. These theories are then used to clarify the origin of the normal incidence absorption and photo current at photon wavelengths of 2 - 3 ${\mu}m$, which was observed in addition to the absorption around 8 ${\mu}m$ by a recent experimental investigation with heavily doped p-type GaAs/AlGaAs multi-quantum well (MQW) structures. In the theoretical analysis, the Hartree and exchange-correlation many-body interactions are taken into account within one-particle local density approximation, and it is shown that normal incidence absorption occurs in two wavelength regions over the transition energy range higher than barrier height for p-type GaAs/AlGaAs superlattices with well doping of $2{\times}10^{19}\;cm^{-3}$; one region has broad absorption peaks with coefficients of about 5000 $cm^{-1}$ around 8 ${\mu}m$, and the other has two rather sharp peaks at 2.7 ${\mu}m$ and 3.4 ${\mu}m$ with 1800 $cm^{-1}$ and 1300 $cm^{-1}$, respectively. The result indicates that the theory explains the experimental observation well, as the theoretical and experimental results are in close agreement in general absorption features.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.13-14
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• 2006

The use of soft-lithography instead of standard photolithography and dry etching technologies is attractive because inexpensive optical device can be realized. Polymerization using multi-photon absorption of materials is also a good method for optical waveguide fabrication. Laser induced self-writing technology of optical waveguide is also very simple and attractive. Using these processes, we can fabricate and interconnect optical circuits at once. In this presentation, several simple fabrication methods will be introduced. New optical loss evaluation method for polymer optical waveguides will also be presented

• Journal of Power System Engineering
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• v.17 no.5
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• pp.44-51
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• 2013

This paper proposes and analyzes recycling of optical phonons emitted by nonradiative decay, which is a major thermal management concern for high-power light emitting diodes (LED), by introducing an integrated, heterogeneous barrier cooling layer. The cooling is proportional to the number of phonons absorbed per electron overcoming the potential barrier, while the multi-phonon absorption rate is inversely proportional to this number. We address the theoretical treatment of photon-electron-phonon interaction/transport kinetics for optimal number of phonons (i.e., barrier height). We consider a GaN/InGaN LED with a metal/AlGaAs/GaAs/metal potential barrier and discuss the energy conversion rates. We find that significant amount of heat can be recycled by the barrier transition cooling layer.

• Laser Solutions
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• v.8 no.2
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• pp.7-12
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• 2005

The material processing of UV nanosecond pulse laser cannot be avoided the material shape change and contamination caused by interaction of base material and laser beam. Nowadays, ultra short pulse laser shorter than nanosecond pulse duration is used to overcome this problem. The advantages of this laser are no heat transfer, no splashing material, no left material to the adjacent material. Because of these characteristics, it is so suitable for micro material processing. The processing of sapphire wafer was done by UV 355nm, green 532nm, IR 1064nm. X-Y motorized stage is installed to investigate the proper laser beam irradiation speed and cycles. Also, laser beam fluence and peak power are calculated.

• Nuclear Engineering and Technology
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• v.53 no.3
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• pp.949-959
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• 2021

The current study aims to explore the shielding properties of multi-component borate-based glass series. Seven glass-samples with composition of (80-y)H₃BO₃-10ZnO-10Na₂O-yBaO where (y = 0, 5, 10, 15, 20, 25 and 30 mol.%) were synthesized by melt-quench method. Various shielding features for photons, neutrons, and protons were determined for all prepared samples. XCOM, Phy-X program, and SRIM code were performed to determine and explain several shielding properties such as equivalent atomic number, exposure build-up factor, specific gamma-ray constants, effective removal cross-section (Σ_R), neutron scattering and absorption, Mass Stopping Power (MSP) and projected range. The energy ranges for photons and protons were 0.015-15 MeV and 0.01-10 MeV, respectively. The mass attenuation coefficient (μ/ρ) was also determined experimentally by utilizing two radioactive sources (¹⁶⁶Ho and ¹³⁷Cs). Consistent results were obtained between experimental and XCOM values in determining μ/ρ of the new glasses. The addition of BaO to the glass matrix led to enhance the μ/ρ and specific gamma-ray constants of glasses. Whereas the remarkable reductions in Σ_R, MSP, and projected range values were reported with increasing BaO concentrations. The acquired results nominate the use of these glasses in different radiation shielding purposes.

• Proceedings of the KSME Conference
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• 2004.11a
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• pp.1213-1218
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• 2004

The present article reports extensive numerical results on the non-local characteristics of ultra-short pulsed laser-induced breakdowns of fused silica ($SiO_{2}$) by using the multivariate Fokker-Planck equation. The nonlocal type of multivariate Fokker-Planck equation is modeled on the basis of the Boltzmann transport formalism to describe the ultra-short pulsed laser-induced damage phenomena in the energy-position space, together with avalanche ionization, three-body recombination, and multiphoton ionization. Effects of electron avalanche, recombination, and multiphoton ionization on the electronic transport are examined. From the results, it is observed that the recombination becomes prominent and contributes to reduce substantially the rate of increase in electron number density when the electron density exceeds a certain threshold. With very intense laser irradiation, a strong absorption of laser energy takes place and an initially transparent solid is converted to a metallic state, well known as laser-induced breakdown. It is also found that full ionization is provided at intensities above threshold, all further laser energy is deposited within a thin skin depth.

• Bulletin of the Korean Chemical Society
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• v.34 no.3
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• pp.907-911
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• 2013

Numbers of matrix- and analyte-derived ions and their sum in matrix-assisted laser desorption ionization (MALDI) of a peptide were measured using 2,5-dihydroxybenzoic acid (DHB) as matrix. As for MALDI with ${\alpha}$-cyano-4-hydroxy cinnamic acid as matrix, the sum was independent of the peptide concentration in the solid sample, or was the same as that of pure DHB. This suggested that the matrix ion was the primary ion and that the peptide ion was generated by matrix-to-peptide proton transfer. Experimental ionization efficiencies of $10^{-5}-10^{-4}$ for peptides and $10^{-8}-10^{-7}$ for matrices are far smaller than $10^{-3}-10^{-1}$ for peptides and $10^{-5}-10^{-3}$ for matrices speculated by Hillenkamp and Karas. Number of gas-phase ions generated by MALDI was unaffected by laser wavelength or pulse energy. This suggests that the main role of photo-absorption in MALDI is not in generating ions via a multi-photon process but in ablating materials in a solid sample to the gas phase.