• Nuclear Engineering and Technology
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• 제55권5호
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• pp.1863-1870
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• 2023

Molybdenum-99 (⁹⁹Mo) is used for preparing Technetium-99 m (^99mTc), which is the most widely used isotope in nuclear medicine. In this work, a study for ⁹⁹Mo production based on a high-power electron accelerator has been performed as an alternative approach to produce ^99mTc. In this study, Monte Carlo MCNPX2.6 code has been used to examine a novel idea of simultaneous hybrid production of ⁹⁹Mo via both photoneutron and neutron capture reactions using an electron accelerator in heavy water tank. It is expected that this conceptual design including an arrangement of metallic plates of ¹⁰⁰Mo and ⁹⁸Mo produces total activity of 97.5 Ci at the end of 20-h continuous e-beam irradiation (30 MeV, 10 mA).

• 공업화학
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• 제9권1호
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• pp.101-106
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• 1998

제올라이트를 담체로 사용하여 활성금속으로 코발트와 몰리브덴을 담지시킨 촉매와 상용공정에 사용되는 $NiMo/{\gamma}-Al_2O_3$촉매를 제조하여, 저온에서의 DBT 탈황활성과 선택성에 대하여 비교하였다. 고정층 고압 연속흐름반응기에서 수행된 탈황반응에서, 저온 영역인 $200^{\circ}C$와 $225^{\circ}C$에서는 제조된 $NiMo/{\gamma}-Al_2O_3$촉매보다 CoMo/zeolite 촉매에서 탈황활성이 더 높았으며, $275^{\circ}C$ 이상의 고온 영역에서는 $NiMo/{\gamma}-Al_2O_3$촉매의 탈황활성이 더 높게 나타났다. $NiMo/{\gamma}-Al_2O_3$촉매에서는 biphenyl과 cyclohexylbenzene이 주생성물인데 비하여 zeolite를 담체로 사용한 촉매의 경우 알킬화반응이 일어나 생성물 분포가 매우 다름을 보여주고 있으며, 알킬화반응과 수소첨가반응의 두 가지 경로를 통해서 최종 생성물질인 alkylcyclohexane을 생성하는 것으로 추정된다. 제올라이트 담체상에서 molybdenum은 flesh 촉매에서 $MoO_3$형태로 존재하고 있으며, aged 촉매상에서는 $MoO_3$와 $MoS_2$형태로 황화되어 있음을 알 수 있었다.

• Applied Science and Convergence Technology
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• 제26권1호
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• pp.16-19
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• 2017

A thin metal layer of molybdenum is placed between the conventional barrier layer and the stainless steel substrate for investigating the diffusion property of iron (Fe) atoms. In this study, the protection probability was confirmed by measuring the concentration of out-diffused Fe using a SIMS depth profile. The Fe concentration of chromium (Cr) barrier layer with 10 nm molybdenum (Mo) layer is 5 times lower than that of Cr barrier without the thin Mo layer. The insertion of a thin Mo metal layer between the barrier layer and the stainless steel substrate effectively protects the out-diffusion of Fe atoms.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.523-525
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• 2002

The poly-Si thin film can be used in high mobility active matrix liquid-crystal display (AMLCD) and system on panel (SOP). In this paper, poly-Si thin films were grown by novel high temperature process on the molybdenum (Mo) substrate. By applying a high current above 48A on a Mo substrate. We obtained an improved crystalline Si films with the crystallinity over 80%. We exhibit the properties of structural and electrical properties of high temperature poly-Si thin film transistor on the Mo substrates.

• 한국분말재료학회지
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• 제11권2호
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• pp.130-136
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• 2004

The passivation and oxidation process of tungsten and molybdenum narlopowders, produced by electrical explosion of wires was studied by means of FE-SEM, XPS. XRD, TEM, DIA-TGA and sire distribution analysis. In addition, the phase transformation of W and Mo nanopowders under oxidation in air was investigated. A chemical process is suggested for the oxidation of W and Mo nano-particles after a comprehensive testing of passivated and oxidized powders.

• Bulletin of the Korean Chemical Society
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• 제34권8호
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• pp.2348-2352
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• 2013

We report a simple electrochemical approach in fabricating multiple colored molybdenum (Mo) oxide bronzes on the surface of a Mo-quartz electrode. A three step electrochemical batch process consisting of linear sweep voltammetry and anodic oxidation followed by cathodic reduction in neutral $K_2SO_4$ electrolyte at different end potentials, viz. -0.62, -0.80 and -1.60 V (vs. $Hg/HgSO_4$) yielded red, blue and yellow colored bronzes. The samples produced were analyzed by XRD, EDS, and SIMS. The color variation was suggested to be associated with the cations intercalation into the oxide formed and the simultaneous structural changes that occurred during the cathodic reduction in neutral aqueous medium.

• Transactions on Electrical and Electronic Materials
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• 제12권6호
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• pp.267-270
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• 2011

In the process of inkjet-printed zinc tin oxide thin-film transistor, the effect of metallic interlayer underneath of source and drain electrode was investigated. The reason for the improved electrical properties with thin molybdenum oxide ($MoO_3$) layer was due to the chemically intermixed state of metallic interlayer, aluminum source and drain, and oxide semiconductor together. The atomic configuration of three Mo $3d_3$ and $3d_5$ doublets, three different Al 2p core levels, two Sn $3d_5$, and four different types of oxygen O 1s in the interfaces among those layers was confirmed by X-ray photospectroscopy.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.356.1-356.1
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• 2014

The Isolation of few-layered transition metal dichalcogenides has mainly been performed by mechanical and chemical exfoliation with very low yields. in particular, the two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential application in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. In this account, a controlled thermal reduction-sulfurization method is used to synthesize large-MoOx thin films are first deposited on Si/SiO2 substrates, which are then sulfurized (under vacuum) at high temperatures. Samples with different thicknesses have been analyzed by Raman spectroscopy and TEM, and their photoluminescence properties have been evaluated. We demonstrated the presence of mono-, bi-, and few-layered MoS2 on as-grown samples. It is well known that the electronic structure of these materials is very sensitive to the number of layer, ranging from indirect band gap semiconductor in the bulk phase to direct band gap semiconductor in monolayers. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.

• 한국작물학회지
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• 제50권2호
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• pp.105-107
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• 2005

A field study was conducted to investigate and ascertain the effects of boron and molybdenum with recommended N P K S Zn fertilizers (RFD) for sustained sugarcane yield in the sandy acidic soil in Old Himalayan Piedmont Plain of Bangladesh. Results revealed that the treatment $T_7$ having recommended fertilizers of N 120, P 35, K 100, S 25 and Zn 2kg $ha^{-1}$ + B 2kg $ha^{-1}$ + Mo 2 kg $ha^{-1}$ produced significantly higher number of millable cane (126.96\times10^3\;ha^{-1})$ except in $T_9$ with RFD + B 2 kg $ha^{-1}$ + Mo 4kg $ha^{-1}$, and higher cane yield (92.83 Mg $ha^{-1}$) among all except in $T_3$ with RFD + B2 kg $ha^{-1}$, $T_5$ with RFD + Mo 2kg $ha^{-1}$ and $T_9$ where the effects were statistically identical. The increase in cane yield by $T_7$ was $164.6\%$ over control. The treatment $T_7$ having RFD + B 2kg $ha^{-1}$ + Mo 2kg $ha^{-1}$ further gave the highest additional net economic benefit of Taka 16, 500.00 for added Band Mo at 2kg $ha^{-1}$ among all the treatments in the study.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.287.1-287.1
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• 2013

The Isolation of few-layered transition metal dichalcogenides has mainly been performed by mechanical and chemical exfoliation with very low yields. in particular, the two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential application in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. In this account, a controlled thermal reductionsulfurization method is used to synthesize large-MoOx thin films are first deposited on Si/SiO2 substrates, which are then sulfurized (under vacuum) at high temperatures. Samples with different thicknesses have been analyzed by Raman spectroscopy and TEM, and their photoluminescence properties have been evaluated. We demonstrated the presence of single-, bi-, and few-layered MoS2 on as-grown samples. It is well known that the electronic structure of these materials is very sensitive to the number of layer, ranging from indirect band gap semiconductor in the bulk phase to direct band gap semiconductor in monolayers. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.