• Transactions of the Korean Society of Mechanical Engineers
• /
• v.7 no.1
• /
• pp.46-51
• /
• 1983

This study practiced to observe the creep behavior at specific temperature on Austentic SUB 27 stainless steel by Moire method. The results obtained from this study are summarized as follows; In tensile experiment, tensile strength and yielding strength decrease as the temperature increases. Yielding strength is equivalent to 60-70% of tensile strength. Reduction of Area and Elongation show minimum values at 300.deg. C. The results of Moire method using Moire heating resisting grid coincide with LVDT result. Therefor, It is proved that the Moire method has great merit in strain measurement of a creep behavior. In homologous at temp. 0.2 or less, creep behavior is very small amount. But, in more than 0.3, creep behavior is very active. Creep rate increase as temperature increase and creep rate is proportional to .alpha. values of experimental equation.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
• /
• 2001.11a
• /
• pp.413-418
• /
• 2001

The moire phenomena, which are induced by mask vibration due to the excitation of speakers, degrades the color purity of CRT. So it is important to eliminate this phenomena to obtain a good CRT design. In this study we analyze the mask vibration by experiment as well as finite element method. To obtain the finite element solutions efficiently, an equivalent model was employed. The experimental and analysis results show reasonable agreements. An enhanced design configuration of mask welding points are suggested through this study.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.51 no.1
• /
• pp.152-157
• /
• 2014

Digital still camera generally uses optical low-pass filter(OLPF) to enhance its image quality because it removes high spatial frequencies causing aliasing. However, the use of OLPF causes some loss of detail. On the other hand, when image are captured by using no OLPF, the moir$\acute{e}$ is generally existed in high spatial frequency region of an image. Therefore, in this paper, moir$\acute{e}$ reduction method in case of using no OLPF is suggested. To detect the moir$\acute{e}$, spatial frequency response(SFR) of camera was firstly analyzed by using ISO 12233 resolution chart. Then, moir$\acute{e}$ region is detected by using the patterns that are related to the SFR of camera. next, this region is analysed in the frequency domain. Then, the moir$\acute{e}$ is reduced by removing its frequency component, which represents inflection point between high frequency and DC components. Through the experimental results, it is shown that the proposed method can achieve moir$\acute{e}$ reduction with preserving the detail.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.10 no.5
• /
• pp.909-916
• /
• 2009

This paper presents the automatic vision algorithm to generate and calibrate reference phase plane to improve the accuracy of 3D measuring machine of using phase shifting projection moire method, which is not traditional N-bucket method, but is based on direct image processing method to the pattern projection image. Generally, to acquire accurate reference phase plane, the calibration specimen with well treated surface is needed, and detailed calibration method should be performed. For the cost reduction of specimen manufacturing and the calibration time reduction, on the specimen, not specially designed, with general accuracy level, an efficient calibration procedure for the reference phase generation is proposed. The proposed vision algorithm is developed to extract the line center points of the projected line pattern from acquired images, derive the line feature information consisting of its slope and intercept by using sampled feature points, and finally generate the related reference phase between line pairs. Experimental results show that the proposed method make reference phase plane with a good accuracy under noisy environment and the proposed algorithm can reduce the total cost to make high accurate calibration specimen, also increase the accuracy of reference phase plane, and reduce the complex calibration procedure to move grid via N-bucket algorithm precisely.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2004.10a
• /
• pp.29-33
• /
• 2004

This paper presents ESPI system for the measurement of thermal expansion coefficient of STS430 up to 1,000$^{\circ}C$. Existing methods, strain gauge and moire have the limitation of contact to object and do not supply the coefficient up to 800$^{\circ}C$. There needs to measure the data up to 800$^{\circ}C$, because heat resistant materials have high melting temperature up to 1,000$^{\circ}C$. In previous studies related to thermal strain analysis, the quantitative results are not reported by ESPI at high temperature, yet. In-plane ESPI and vacuum chamber for the reduction of air turbulence and oxidation are designed for the measurement of the coefficient up to 1,000$^{\circ}C$and speckle correlation fringe pattern images are processed by commercial image filtering tool-smoothing, thinning and enhancement- to obtain quantitative results, which is compared with references data. The comparison shows two data are agreed within 4.1％ blow 600$^{\circ}C$ however, there is some difference up to 600$^{\circ}C$. Also, the incremental ratio of the coefficient is changed up to 800$^{\circ}C$. The reason is the phase transformation of STS430 probably begins at 800$^{\circ}C$.

• Journal of the Korean Society for Precision Engineering
• /
• v.21 no.11
• /
• pp.69-74
• /
• 2004

This paper presents ESPI system for the measurement of thermal expansion coefficient of STS430 up to 1,00$0^{\circ}C$ . Existing methods, strain gauge and moire have the limitation of contact to object and do not supply the coefficient up to 80$0^{\circ}C$ . There needs to measure the data up to 80$0^{\circ}C$, because heat resistant materials have high melting temperature up to 1,000'E In previous studies related to thermal strain analysis, the quantitative results have not reported by ESPI at high temperature, yet. In-plane ESPI and vacuum chamber for the reduction of air turbulence and oxidation are designed for the measurement of the coefficient up to 1,00$0^{\circ}C$ and speckle correlation fringe pattern images are processed by commercial image filtering tool-smoothing, thinning and enhancement- to obtain quantitative results, which is compared with references data. The comparison shows two data are agreed within 4.1% blow $600^{\circ}C$ however, there is some difference up to $600^{\circ}C$. Also, the incremental ratio of the coefficient is changed up to 80$0^{\circ}C$ . The reason is the phase transformation of STS430 probably begins at 80$0^{\circ}C$

• Journal of the Microelectronics and Packaging Society
• /
• v.6 no.2
• /
• pp.13-21
• /
• 1999

Flip chip assembly directly on organic boards offers miniaturization of package size as well as reduction in interconnection distances resulting in a high performance and cost-competitive Packaging method. This paper describes the investigation of alternative low cost flip-chip mounting processes using electroless Ni/Au bump and anisotropic conductive adhesives/films as an interconnection material on organic boards such as FR-4. As bumps for flip chip, electroless Ni/Au plating was performed and characterized in mechanical and metallurgical point of view. Effect of annealing on Ni bump characteristics informed that the formation of crystalline nickel with $Ni_3$P precipitation above $300^{\circ}C$ causes an increase of hardness and an increase of the intrinsic stress resulting in a reliability limitation. As an interconnection material, modified ACFs composed of nickel conductive fillers for electrical conductor and non-conductive inorganic fillers for modification of film properties such as coefficient of thermal expansion(CTE) and tensile strength were formulated for improved electrical and mechanical properties of ACF interconnection. The thermal fatigue life of ACA/F flip chip on organic board limited by the thermal expansion mismatch between the chip and the board could be increased by a modified ACA/F. Three ACF materials with different CTE values were prepared and bonded between Si chip and FR-4 board for the thermal strain measurement using moire interferometry. The thermal strain of ACF interconnection layer induced by temperature excursion of $80^{\circ}C$ was decreased with decreasing CTEs of ACF materials.