• Korean Journal of Materials Research
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• v.31 no.11
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• pp.593-600
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• 2021

Herein, a series of g-C₃N₄ modified Bi₂MoO₆ nanocomposites using Bi₂MoO₆ and melamine as original materials are fabricated via sintering process. For presynthesis of Bi₂MoO₆ an ultrasonic-assisted hydrothermal technique is researched. The structure and composition of the nanocomposites are characterized by Raman spectroscopy, X-ray diffraction (XRD), and high-resolution field emission scanning electron microscopy (SEM). The improved photoelectrochemical properties are studied by photocurrent density, EIS, and amperometric i-t curve analysis. It is found that the structure of Bi₂MoO₆ nanoparticles remains intact, with good dispersion status. The as-prepared g-C₃N₄/Bi₂MoO₆ nanocomposites (BMC 5-9) are selected and investigated by SEM analysis, which inhibits special morphology consisting of Bi₂MoO₆ nanoparticles and some g-C₃N₄ nanosheets. The introduction of small sized g-C₃N₄ nanosheets in sample BMC 9 is effective to improve the charge separation and transfer efficiency, resulting in enhancing of the photoelectric behavior of Bi₂MoO₆. The improved photoelectronic behavior of g-C₃N₄/Bi₂MoO₆ may be attributed to enhanced charge separation efficiency, photocurrent stability, and fast electron transport pathways for some energy applications.

• Journal of the Korean Ceramic Society
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• v.39 no.2
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• pp.159-163
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• 2002

A single phase perovskite relaxor ferroelectric PMN-PT-BT was prepared by a single calcination and the modified mixed oxide process. It was accomplished by ball-milling PbO, $Nb_2O_5,\;Ti(OC_3H_7)_4,\;BaCO_3,\;and\;Mg(NO_3)_2$ instead of MgO, removing the solvent, and then followed by calcination at 900$^{\circ}C$ for 2h. The specimen sintered at 1100$^{\circ}C$/2h showed the sintered density of 7.83 g/$cm^3$, room temperature dielectric constant of 22000, and dielectric loss of 2.5%. Addition of 1.0 mole% (0.3 wt%) of Ag as $AgNO_3$ and followed by calcination at 550$^{\circ}C$/2h lowered the sintering temperature to 900$^{\circ}C$. It still showed the sintered density of 7.88 g/$cm^3$, room temperature dielectric constant of 20000 and dielectric loss of 2.4%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.875-881
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• 2004

Fundamental results obtained from an atomic force microscope (AFM) chemically-induced direct nano-lithography process are presented, which is regarded as a simple method for fabrication nm-scale devices such as superconducting flux flow transistors (SFFTs) and single electron tunneling transistors (SETs). Si cantilevers with Pt coating and with 30 nm thick TiO coating were used as conducting AFM tips in this study. We observed the surfaces of superconducting strip lines modified by AFM anodization' process. First, superconducting strip lines with scan size 2 ${\mu}{\textrm}{m}$${\times}$2 ${\mu}{\textrm}{m}$ have been anodized by AFM technology. The surface roughness was increased with the number of AFM scanning, The roughness variation was higher in case of the AFM tip with a positive voltage than with a negative voltage in respect of the strip surface. Second, we have patterned nm-scale oxide lines on ${YBa}-2{Cu}_3{O}_{7-x}$ superconducting microstrip surfaces by AFM conductive cantilever with a negative bias voltage. The ${YBa}-2{Cu}_3{O}_{7-x}$ oxide lines could be patterned by anodization technique. This research showed that the critical characteristics of superconducting thin films were be controlled by AFM anodization process technique. The AFM technique was expected to be used as a promising anodization technique for fabrication of an SFFT with nano-channel.

• Journal of the Korea Institute of Military Science and Technology
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• v.5 no.3
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• pp.105-112
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• 2002

A combined process of non-thermal plasma and catalytic techniques has been investigated to treat toxic gas compounds in air. The treated gas in the present study is $CH_3$CN that has been known to be a simulant of toxic chemical agent. A planar type dielectric barrier discharge(DBD) reactor has been used to generate non-thermal plasma that produces various chemically active species, O, N, OH, $O_3$, ion, electrons, etc. Several different types of adsorbents and catalysts, which are MS 5A, MS 13X, Pt/alumina, are packed into the plasma reactor, and have been tested to save power consumption and to treat by-products. Various aspects of the present techniques, which are decomposition efficiencies along with the power consumption, by-product analysis, reaction pathways modified by the adsorbents and catalysts, have been discussed in the present study.

• Journal of Digital Convergence
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• v.11 no.5
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• pp.237-243
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• 2013

This study aims to examine the modified $A^2/O$ process is useful to reduce the environmental pollution caused by nutrient in wastewater. Specific results are as follows: The removal rate was evaluated at each time period, ie., 18h, 8h, 6h, and 3h after the reaction started. The anoxic rate was more than 94-97% from 18h to 6h but was less than 50% before 6h. Thus, the test of nitrification was done using 6h as the optimal anoxic retention time and the aerobic retention time set at 24h. When the flow change was 1:1, the average ammonia concentration inputted was $30mg/{\ell}$. Returned top nitric acid solution and the concentration of ammonia solution falling into the anoxic reactor was about 50％ of the initial concentration, and the flow change was 1:2, the concentration of ammonia falling into the anoxic reactor was about 62% of that of influxed ammonia. And the results of this study showed that the nitrogen removal rate can be improved by inputting untreated nitric acid and changing the flow of top nitrate solution using the modified $A^2/O$ method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.339-342
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• 1998

Ferroelectric L $a_2$ $Ti_2$ $O_{7}$(LTO) thin films were prepared by chemical solution deposition processes. Acetylacetone was used as chelating agent and nitric acid was added in the stock solution to control hydrolysis and condensation reaction rate. The LTO thin films were spin-coated on Pt/Ti/ $SiO_2$/(100)Si and Pt/Zr $O_2$/ $SiO_2$/(100)Si substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. The role of acetylacetone in Ti iso-propoxide stabilization by possibly substituting $O^{i}$Pr ligand was studied by H-NMR. B site-rich impurity phase, i.e. L $a_4$ $Ti_{9}$ $O_{24}$, was found after annealing, where its appearance was dependent on process temperature indicating the possible reaction with substrate. Dielectric and other relevant electrical properties were measured and the results were compared between modified sol-gel and MOD processes.s.s.

• Journal of Korean Society for Atmospheric Environment
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• v.18 no.1
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• pp.51-58
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• 2002

Destruction process of toluene using a wire-cylindrical BBD (Dielectric Barrier Discharge) reactor packed with catalysts was investigated to characterize the synergetic effects of non-thermal plasma and catalyst process. The catalysts used in the present study were ${\gamma}$-Al$_2$BO$_3$ and Pt/${\gamma}$-Al$_2$O$_3$. Under the numerous test conditions, specific energy density (SED (J/L)) and the conversion of toluene, defined as (1 -[C$_{f}$]/[C$_{i}$]), were measured. The test results showed that toluene decomposition efficiency followed the pseudo-first order in the case of plasma only process. The pseudo-first order process, however, was modified to pseudo-zeroth order reaction in the case of catalyst-assisted plasma process. This modification of the reaction order was verified based on a simple kinetic model proposed in the present study. Owing to the modification of reaction order, which resulted from the catalytic process, the specific energy to achieve the high removal efficiencies, i.e. 80~90%, was reduced significantly.y.y.

• Progress in Superconductivity and Cryogenics
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• v.7 no.3
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• pp.5-8
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• 2005

Superconducting YBCO films were successfully fabricated by MOD process using F-free Cu precursor solution. In this study. a chemically modified precursor solution for MOD Processing was synthesized using metal-organic salts and F-free Cu precursor. It was shown that crack-free and uniform precursor films were formed after calcination in humidified oxygen atmosphere. Less than 3 hours are required to finish the calcination process. XRD measurement shows that $BaF_2,\;CuO,\;Y_2O_3$ are major constituent of precursor films. Furthermore. YBCO films without any secondary phases were successfully fabricated after annealing in wet $Ar/O_2$ prepared on a $LaA1O_3$ single crystal substrate $(10mm{\times}10mm)$ gives transport Ic of 10A at 77K. This chemical modification approach is a possible candidate for improving MOD-processing of YBCO coated conductor.

• Korean Journal of Metals and Materials
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• v.49 no.11
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• pp.868-873
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• 2011

In this study, the fabrication of ultra fine grained Mo bulk was conducted. $MoO_3$ nanopowders were prepared by a high energy ball-milling process and then reduced at the temperature of $800^{\circ}C$ without holding time in $H_2$ atmosphere. The particle size of Mo nanopowder was ~150 nm and grain size was ~40 nm. The two-step process was employed for the sintering of Mo nanopowder to obtain fine grain size. The densification over 90% could be obtained by the two-step sintering with a grain size of less than 660 nm. For higher density, modified two-step sintering was designed. 95% of theoretical density with the grain size of 730 nm was obtained by the modified two-step sintering.

• Korean Journal of Materials Research
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• v.17 no.10
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• pp.509-515
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• 2007

In order to fabricate adhesiveless 2-layer flexible copper clad laminate (FCCL) used for COF (chip on film) with high peel strength, polyimide (PI; Kapton-EN, $38\;{\mu}m$) surface was modified by reactive $O_2^+$ and $N_2O^+$ ion beam irradiation. 300 mm-long linear electron-Hall drift ion source was used for ion irradiation with ion current density (J) higher than $0.5\;mA/cm^2$ and energy lower than 200 eV. By vacuum web coating process, PI surface was modified by linear ion source and then 10-20 nm thick Ni-Cr and 200 nm thick Cu film were in-situ sputtered as a tie layer and seed layer, respectively. Above this sputtered layer, another $8-9{\mu}m$ thick Cu layer was grown by electroplating and subsequently acid and base resistance and thermal stability were tested for examining the change of peel strength. Peel strength for the FCCLs treated by both $O_2^+$ and $N_2O^+$ ion irradiation showed similar magnitudes and increased as the thickness of tie layer increased. FCCL with Cu (200 nm)/Ni-Cr (20 nm)/PI structure irradiated with $N_2O^+$ at $1{\times}10^{16}/cm^2$ ion fluence was proved to have a strong peel strength of 0.73 kgf/cm for as-received and 0.34 kgf/cm after thermal test.