• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 추계학술대회 논문집
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• pp.158-158
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• 2009

The electrophoretic deposition(EPD) technique with a wide range of novel applications in the processing of advanced ceramic materials and coatings, has recently gained increasing interest both in academic and industrial sector not only because of the high versatility of its use with different materials and their combinations but also because of its cost-effectiveness requiring simple apparatus. Compared to other advanced shaping techniques, the EPD process is very versatile since it can be modified easily for a specific application. For example, deposition can be made on flat, cylinderical or any other shaped substrate with only minor charge in electrode design and positioning[1]. The synthesis of the nano-sized Ce0.2Sm0.8O1.9(SDC)particles prepared by aurea based low temperature hydrothermal process was investigated in this study[2].When we made the SDC nanoparticles, changed the time of synthesis of the SDC. The SDC nanoparticles were characterized with field-emission scanning electron microscope(FESEM), energy dispersive X-ray analysis(EDX), and X-ray diffraction(XRD). And also we researched the results of our investigation on electrophoretic deposition(EPD) of the SDC particles from its suspension in acetone solution onto a non-conducting NiO-SDC substrate. In principle, it is possible to carry out electrophoretic deposition on non-conducting substrates. In this case, the EPD of SDC particles on a NiO-SDC substrate was made possible through the use of a adequately porous substrate. The continuous pores in the substrates, when saturated with the solvent, helped in establishing a "conductive path" between the electrode and the particles in suspension[3-4]. Deposition rate was found to increase its increasing deposition time and voltage. After annealing the samples $1400^{\circ}C$, we observed that deposited substrate.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2006년도 춘계학술대회
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• pp.190-193
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• 2006

Gadolinium-substituted bismuth titanate, $Bi_{3.3}Gd_{0.7}Ti_{3}O_{12}$, thin films were successfully fabricated on Pt(111)/Ti/$SiO_2$/Si(100) substrates by a MOCVD process. Fabricated BGT thin films were found to be random oriental ions, which were confirmed by X-ray diffraction and scanning electron microscope analysis. The remanent polarization value ($2P_r$) of the BGT thin film annealed at $720^{\circ}C$ was $45.13{\mu}C/cm^2$, at an applied voltage of 5 V. The BGT thin film exhibits a good fatigue resistance up to $1{\times}10^{11}$ switching cycles at a frequency of 1 MHz with applied voltage of 5 V. These results indicate that the randomly oriented BGT thin film is a promising candidate among ferroelectric materials useful in lead-free nonvolatile ferroelectric random access memory applications.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.931-939
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• 1998

Preparation of the hexagonal Sr-ferrite powsers with high performance by co-spraying precusor of the FeCl$_2$+SrCO$_3$ at a low temperature was proved as a cost =-effective method. The co-spray roasting was carried out in the temperature range of 300~$700^{\circ}C$ after SrCO$_3$ powders were mixed into 12FeCi$_2$.4$H_2O$ liquor. By this low temperature roasting method fine particles of multi-phased FeO$_2$+SrCO$_3$ were formulated. Powders calcined at 105$0^{\circ}C$ for 1 hour show the best magnetic property of M\ulcorner=69.96 emu/g, M\ulcorner=36.98 emu/g, and \ulcornerH\ulcorner=4.31 Oe. This calcining temperature is lower than that of the conventional dry method by 10$0^{\circ}C$.

• 대한금속재료학회지
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• 제48권1호
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• pp.49-56
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• 2010

This study investigated how the surface of Al-12wt.%Si alloy modified by the plasma electrolytic oxidation process (PEO). The PEO process was performed in an electrolyte with sodium hexametaphsphate as a conducting salt, and the effect of ammonium metavanadate on variations in the morphology of electrochemically generated oxide layers on the alloy surface was investigated. It is difficult to form a uniform passive oxide layer on Al alloys with a high Si content due to the differences in the oxidation behavior of the silicon-rich phase and the aluminum-rich phase. The oxide layer covered the entire surface of the Al-12WT.%Si alloy uniformly when ammonium metavanadate was added to the electrolyte. The oxide layer was confirmed as a mixture of $V_2O_3$ and $V_2O_5$ by XPS analysis. In addition, the oxide layer obtained by the PEO process with ammonium metavanadate exhibited a black color. Application of this surface modification method is expected to solve the problem of the lack of uniformity in the coloring of oxide layeres caused by different oxidation behaviors during a surface treatment.

• KSBB Journal
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• 제23권1호
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• pp.83-89
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• 2008

음식물쓰레기를 처리하기 위한 3단계 메탄발효시스템으로부터 유출되는 음식물 발효 폐액은 고농도 유기성 폐수이다. 유기성 폐수는 고도처리 시스템에 의해 방류기준에 적합하게 처리되어져야만 한다. 본 연구에서는 유기성 폐수를 처리하기 위해 고효율 $UV/TiO_{2}$ 광촉매 산화공정의 최적 운전 조건을 조사하였다. 첫 번째 공정에서 폐수에 응집제인 $FeCl_{3}$를 전처리 하였으며, 응집을 위한 최적 pH와 응집제의 농도는 각각 pH 4와 2000 mg/L이었다. 이 공정을 통하여 최대 52.6%의 COD가 제거되었다. 두 번째는 $UV/TiO_{2}$ 광촉매 산화공정으로, 최적 운전 조건은 중심파장이 254 nm, 폐수 온도 및 pH가 각각 $40^{\circ}C$와 pH 8, 반응기 주입 공기량이 40 L/min인 것으로 조사되었다. 응집제를 이용한 전처리 공정과 광촉매 산화공정을 병합하여 최적조건에서 폐수를 처리할 경우 T-N과 COD의 제거율은 각각 69.7%와 70.9% 이었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.142.2-142.2
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• 2015

Plasma etch endpoint detection (EPD) of SiO2 and PR layer is demonstrated by plasma impedance monitoring in this work. Plasma etching process is the core process for making fine pattern devices in semiconductor fabrication, and the etching endpoint detection is one of the essential FDC (Fault Detection and Classification) for yield management and mass production. In general, Optical emission spectrocopy (OES) has been used to detect endpoint because OES can be a simple, non-invasive and real-time plasma monitoring tool. In OES, the trend of a few sensitive wavelengths is traced. However, in case of small-open area etch endpoint detection (ex. contact etch), it is at the boundary of the detection limit because of weak signal intensities of reaction reactants and products. Furthemore, the various materials covering the wafer such as photoresist (PR), dielectric materials, and metals make the analysis of OES signals complicated. In this study, full spectra of optical emission signals were collected and the data were analyzed by a data-mining approach, modified K-means cluster analysis. The K-means cluster analysis is modified suitably to analyze a thousand of wavelength variables from OES. This technique can improve the sensitivity of EPD for small area oxide layer etching processes: about 1.0 % oxide area. This technique is expected to be applied to various plasma monitoring applications including fault detections as well as EPD.

• 멤브레인
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• 제22권5호
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• pp.359-368
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• 2012

탄소 한외여과막 및 광촉매 혼성 수처리를 위해 관형 여과막 외부와 원통형 막 모듈 내부 사이 공간에 광촉매를 충전하였다. 광촉매는 PP (polypropylene) 구에 이산화티타늄 분말을 플라즈마 화학증착 공정으로 코팅한 것이다. 휴믹산과 카올린 모사용액을 대상으로 막오염을 최소화하기 위해 10분 주기로 10초 동안 물 역세척을 시행하였다. 기존 결과와 동일하게 휴믹산을 10 mg/L부터 2 mg/L로 변화시킴에 따라, 막오염에 의한 저항($R_f$)이 감소하여 2 mg/L에서 최대 총여과부피 ($V_T$)를 얻었다. 탁도와 휴믹산의 처리효율은 각각 98.9%와 88.7% 이상이었다. UF 및 UF + $TiO_2$, UF + $TiO_2$ + UV 공정의 처리 분율 결과, 광촉매 흡착과 광산화에 의해 탁도는 거의 처리되지 않았으나, 광촉매 흡착 및 광산화에 의한 휴믹산 처리 분율은 각각 2.5%, 12.3%이었다. 기존 결과와 비교하면, 분리막의 재질과 기공의 크기에 따라 광촉매 흡착과 광산화에 의한 휴믹산의 처리 분율이 다르게 나타났다. 공정이 단순화될수록 180분 운전 후 막오염 저항($R_{f,180}$)은 증가하였고, 최종 투과선속($J_{180}$)은 소폭 감소하였다.

• 대한기계학회논문집A
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• 제20권10호
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• pp.3234-3242
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• 1996

This paper describes experimental results of modified small punch( MSP) test conducted to evaluate the fracure characteristics and mechanical properties of plasma sparayed zirconia ($ZrO_2$ stabilized with 8wt. % $Y_20_3$ : YSZ) NiCrAlY composite. The mixing ratios of YSZ/NiCrAlY were 0/100, 25/75, 50/50, 100/0 v.%. Test temperatures ranged from 293K to 1473K. This study is directed at development of thermal barrrier coating(TBC) system with superior heat resistance and mechanical properties. The microstructure and fracture process of the composite were examined by SEM and AE method. The mechanical properties of 100% YSZ were nearly independent of the temperatures tested in this study. In contrast, the NiCrAlY-containing composites showed a significant decrease of the mechanical properties above 1273K, showing a ductile- brittle transition behavior up to the temperature. Furthermore, it can seen that 25% YSZ/75% NiCrAlY composite gave the highest fracure strength and fracture energy among the mixing ratio tested over the temperature range.

• 한국재료학회지
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• 제26권12호
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• pp.733-740
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• 2016

$Al_2O_3$ nanosol dispersed under ethanol or N-Methyl-2-pyrrolidone(NMP) was studied and optimized with various dispersion factors and by utilizing the silane modification method. The two kinds of $Al_2O_3$ powders used were prepared by thermal decomposition method from aluminum ammonium sulfate$(AlNH_4(SO_4)_2)$ while controlling the calcination temperature. $Al_2O_3$ sol was prepared under ethanol solvent by using a batch-type bead mill. The dispersion properties of the $Al_2O_3$ sol have a close relationship to the dispersion factors such as the pH, the amount of acid additive(nitric acid, acetic acid), the milling time, and the size and combination of zirconia beads. Especially, $Al_2O_3$ sol added 4 wt% acetic acid was found to maintain the dispersion stability while its solid concentration increased to 15 wt%, this stability maintenance was the result of the electrostatic and steric repulsion of acetic acid molecules adsorbed on the surface of the $Al_2O_3$ particles. In order to observe the dispersion property of $Al_2O_3$ sol under NMP solvent, $Al_2O_3$ sol dispersed under ethanol solvent was modified and solvent-exchanged with N-Phenyl-(3-aminopropyl)trimethoxy silane(APTMS) through a binary solvent system. Characterization of the $Al_2O_3$ powder and the nanosol was observed by XRD, SEM, ICP, FT-IR, TGA, Particles size analysis, etc.

• 한국전기전자재료학회논문지
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• 제25권9호
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• pp.681-685
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• 2012

We investigated the dry etching characteristics of TiN in $TiN/Al_2O_3$ gate stack using a inductively coupled plasma system. TiN thin film is etched by BCl3/He plasma. The etching parameters are the gas mixing ratio, the RF power, the DC-bias voltages and process pressures. The highest etch rate is in $BCl_3/He$ (25%:75%) plasma. The selectivity of TiN thin film to $Al_2O_3$ is pretty similar with $BCl_3/He$ plasma. The chemical reactions of the etched TiN thin films are investigated by X-ray photoelectron spectroscopy. The intensities of the Ti 2p and the N 1s peaks are modified by $BCl_3$ plasma. Intensity and binding energy of Ti and N could be changed due to a chemical reaction on the surface of TiN thin films. Also we investigated that the non-volatile byproducts such as $TiCl_x$ formed by chemical reaction with Cl radicals on the surface of TiN thin films.