• 한국신재생에너지학회:학술대회논문집
• /
• 2010.06a
• /
• pp.95.1-95.1
• /
• 2010

Transparent conducting ZnO films were deposited to apply DSSC Substrate on glass substrates at $500^{\circ}C$ by ionbeam-assisted deposition. Crystallinity, microstructure, surface roughness, chemical composition, electrical and optical properties of the films were investigated as a function of deposition parameters such as ion energy, and substrate temperature. The microstructure of the polycrystalline ZnO films on the glass substrate were closely related to the oxygen ion energy, arrival ratio of oxygen to Zinc Ion bombarded on the growing surface. The main effect of energetic ion bombardment on the growing surface of the film may be divided into two categories; 1) the enhancement of adatom mobility at low energetic ion bombardment and 2) the surface damage by radiation damage at high energetic ion bombardment. The domain structure was obtained in the films deposited at 300 eV. With increasing the ion energy to 600 eV, the domain structure was changed into the grain structure. In case of the low energy ion bombardment of 300 eV, the microstructure of the film was changed from the grain structure to the domain structure with increasing arrival ratio. At the high energy ion bombardment of 600 eV, however, the only grain structure was observed. The electrical properties of the deposited films were significantly related to the change of microstructure. The films with the domain structure had larger carrier concentration and mobility than those with the grain structure, because the grain boundary scattering was reduced in the large size domains compared with the small size grains. The optical transmittance of ZnO films was dependent on a surface roughness. The ZnO films with small surface roughness, represented high transmittance in the visible range because of a decreased light surface scattering. By varying the ion energy and arrival ratio, the resistivity and optical transmittance of the films were varied from $1.1{\times}10^{-4}$ to $2.3{\times}10^{-2}{\Omega}cm$ and from 80 to 87%, respectively. The ZnO film deposited at 300 eV, and substrate temperature of $500^{\circ}C$ had the resistivity of $1.1{\times}10^{-4}{\Omega}cm$ and optical transmittance of 85% in visible range. As a result of experiments, we provides a suggestition that ZnO thin Films can be effectively used as the DSSC substrate Materials.

• Bulletin of the Korean Chemical Society
• /
• v.33 no.3
• /
• pp.790-794
• /
• 2012

Trace metal ions such as $Cd^{2+}$, $Ni^{2+}$, and $Zn^{2+}$ in a highly saline sample were subjected to on-line complexation with 4-(2-thiazolylazo) resorcinol (TAR) dissolved in a background electrolyte (BGE) under transient isotachophoresis (TITP) conditions. A long plug of the saline sample, containing the trace metal ions but devoid of TAR, was injected into a coated capillary filled with a BGE composed of 150 mM 2-(cyclohexylamino) ethanesulfonic acid (CHES) and 110 mM triethylamine (TEA) at pH 9.7. Since the electrophoretic mobility of TAR fell between the mobilities of the anionic leading electrolyte ($Cl^-$ in the sample) and the anionic terminating background electrolyte ($CHES^-$), a highly concentrated zone of TAR from the BGE was formed at the rear of the sample matrix and then the metal cations toward the cathode were swept by isotachophoretically assisted on-line complexation (IAOC) between the metal ions and the isotachophoretically stacked TAR. As a result, anionic metal-TAR complexes were formed efficiently, which satisfy the TITP conditions between $Cl^-$ and $CHES^-$. The enrichment factors of metal ions including $Cd^{2+}$ were up to 780-fold compared to a conventional CZE mode using absorbance detection. The detection limits were 17 nM, 15 nM, and 27 nM for $Ni^{2+}$, $Zn^{2+}$, and $Cd^{2+}$ in a 250 mM NaCl matrix, respectively. Our method was successfully applied to the analysis of urine samples without desalting.

• Archives of Plastic Surgery
• /
• v.35 no.4
• /
• pp.393-399
• /
• 2008

Purpose: Chronic infected wounds sustained over 4 weeks with exposed tendon or bone are difficult challenges to plastic surgeons. Vacuum assisted closure (VAC) device has been well used for the management of chronic wounds diminishing wound edema, reducing bacterial colonization, promoting formation of granulation tissue and local blood flow by negative pressure to wounds. But Commercial ready-made VAC device might have some difficulties to use because of its high expenses and heavy weight. So we modified traditional VAC device with silver dressing materials as topical therapeutic agents for control of superimposed bacterial wound infection such as MRSA, MRSE and peudomonas. Methods: We designed the modified VAC device using wall suction, 400 cc Hemovac and combined slow release silver dressing materials. We compared 5 consecutive patients' data treated by commercial ready-made VAC device(Group A) with 11 consecutive patients' data treated by modified VAC device combined with silver dressing materials(group B) from September 2004 to June 2007. Granulation tissue growth, wound discharge, wound culture and wound dressing expenses were compared between the two groups. Results: In comparison of results, no statistical differences were identified in reducing rate of wound size between group A and B. Wound discharge was significantly decreased in both groups. Modified VAC device with silver dressing materials showed advantages of convenience, cost effectiveness and bacterial reversion. Conclusion: In combination of modified VAC device and silver dressing materials, our results demonstrated the usefulness of managing chronic open wounds superimposed bacterial infection, cost effectiveness compared with traditional VAC device and improvement of patient mobility.

• Maxillofacial Plastic and Reconstructive Surgery
• /
• v.30 no.5
• /
• pp.480-488
• /
• 2008

Orthodontists often treat cases which are difficult to treat with conventional orthodontics. In such cases, it could be treated with surgical procedures with the help of an oral surgeon. Especially, transverse deficiency of the mandible can be corrected by widening the transverse width of mandibular symphysis, using distraction osteogenesis. Transverse widening of mandibular sympysis is known as a safe treatment but still complications could occur during the treatment. We are reporting some complications of cases that mandibular symphysis transverse widening were applied. Some cases showed complications because of the inappropriate osteotomy line. Since straight vertical osteotomy line was inclined to the left, only the left bony segment was likely to expand. According to bio-mechanical considerations, it will be better to perform a step osteotomy, cutting the eccentric area of the alveolar crest and the centric area of the basal symphyseal area. Complications could also occur by the failure of the distraction device. The tooth borne distraction device was attached on the lingual side of the tooth with composite resin. During the distraction period, it was impossible to obtain appropriate distraction speed and rhythm because of frequent fall off of the distraction device. Therefore, distraction device should be attached firmly with orthodontic band or bone screw, etc. Tooth mobility increasement could also occur as a complication. 'Walking teeth phenomenon' was observed during the distraction period, showing severe teeth mobility and pain during mastication. These symptoms fade out during the consolidation period. Since the patient could feel insecure and uncomfortable, it should be notified to the patient before the procedure. Finally, alveolar crestal bone loss could occur. Alveolar crestal bone loss occurred because of lack of distraction device firmness and teeth trauma caused by lower lip biting habit. Therefore, adequate firmness of the distraction device and habit control will be needed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.256.2-256.2
• /
• 2014

최근 고출력 펄스 스퍼터링, HPPMS (high power pulsed magnetron sputtering)을 개선한 기술이 개발되고 있다. High power impulse magnetron sputtering (HIPIMS)이라고도 불려지는 이 기술은 Kouznetsov1) 에 의해 개발되었으며, 짧은 주기 동안 높은 peak power 밀도를 얻을 수 있기 때문에, 스퍼터링시 높은 이온화율을 만들 수 있다. 스퍼터 된 종들의 높은 이온화는 다양한 분야에서 기존 코팅 물질의 특성 개선 및 self-assisted 이온 증착 공정을 통해 우수한 박막을 제조하는데 기여되고 있다. 그러나 HIPIMS는 순간 전력 밀도가 MW수준으로 높아서 고융점, 고열전도도의 물질에만 적용할 수 있다는 단점을 가지고 있다). 최근에 HIPIMS를 대체하기 위해 modulated pulse POWER (MPP)가 개발되었다. 이것은 스퍼터 된 종들의 이온화율을 높일 수 있음과 동시에 여러 가지 물질에 적용할 수 있다고 보고하고 있다. MPP와 HIPIMS와의 차이점은 HIPIMS는 간단한 하나의 초고출력 펄스를 이용하는 반면에, MPP는 펄스 길이 3 ms 안에서 다양하게 조절이 가능하며, 한 전체 펄스 주기 안에서 다중 세트 펄스와 micro 펄스를 자유롭게 조합하여 인가할 수 있다는 장점이 있다. 본 실험에서는 In2O3 : SnO2의 조성비 10:1 wt% target을 사용하였으며, Ar:O2의 유량비는 10:1의 비율로, 기판의 온도를 올려 주지 않는 상태에서 실험을 하였다. Ar 유량을 40 sccm으로 고정시킨 후 O2의 유량을 2~6 sccm에 대하여 비교를 하였다. 박막의 두께를 100 nm로 이하로 하였을 때 비저항은 $7.6{\times}10-4{\Omega}cm$의 값을, 80% 이상의 투과도와 10 cm2/Vs 이상의 mobility를 얻을 수 있었다. 또한 박막 두께 150 nm로 고정, substrate moving에 따른 ITO 박막의 차이를 알아보았다. 비저항의 값은 $5.6{\times}10-4{\Omega}cm$의 값을, 80% 이상의 투과도와 15 cm2/Vs의 값을 얻었다.

• Korean Journal of Materials Research
• /
• v.30 no.3
• /
• pp.142-148
• /
• 2020

Graphene has attracted the interest of many researchers due to various its advantages such as high mobility, high transparency, and strong mechanical strength. However, large-area graphene is grown at high temperatures of about 1,000 ℃ and must be transferred to various substrates for various applications. As a result, transferred graphene shows many defects such as wrinkles/ripples and cracks that happen during the transfer process. In this study, we address transfer-free, large-scale, and high-quality monolayer graphene. Monolayer graphene was grown at low temperatures on Ti (10nm)-buffered Si (001) and PET substrates via plasma-assisted thermal chemical vapor deposition (PATCVD). The graphene area is small at low mTorr range of operating pressure, while 4 × 4 ㎠ scale graphene is grown at high working pressures from 1.5 to 1.8 Torr. Four-inch wafer scale graphene growth is achieved at growth conditions of 1.8 Torr working pressure and 150 ℃ growth temperature. The monolayer graphene that is grown directly on the Ti-buffer layer reveals a transparency of 97.4 % at a wavelength of 550 nm, a carrier mobility of about 7,000 ㎠/V×s, and a sheet resistance of 98 W/□. Transfer-free, large-scale, high-quality monolayer graphene can be applied to flexible and stretchable electronic devices.

• Journal of the Korean Society for Heat Treatment
• /
• v.29 no.3
• /
• pp.124-131
• /
• 2016

GaN and InN epilayers with nucleation layer (LT-buffer) were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). As-grown and annealed GaN and InN nucleation layers grown at various growth condition were observed by reflection high-energy electron diffraction (RHEED). When temperature of effusion cell for III source was very low, diffraction pattern with cubic symmetry was observed and zincblende nucleation layer was flattened easily by annealing. As cell temperature increased, LT-GaN and LT-InN showed typical diffraction pattern from wurtzite structure, and FWHM of (10-12) plane decreased remarkably which means much improved crystalline quality. Diffraction pattern was changed to be from streaky to spotty when plasma power was raised from 160 to 220 W because higher plasma power makes more nitrogen adatoms on the surface and suppressed surface mobility of III species. Therefore, though wurtzite nucleation layer was a little hard to be flattened compared to zincblende, higher cell temperature led to easier movement of III surface adatoms and resulted in better crystalline quality of GaN and InN epilayers.

• Maxillofacial Plastic and Reconstructive Surgery
• /
• v.23 no.4
• /
• pp.332-337
• /
• 2001

An odontoma is a slow growing and nonaggressive odontogenic tumor composed of enamel, dentin, cementum, and pulp tissue. The etiology of odontomas is unknown, although local trauma, infection, and genetic factors have been suggested. Odontomas are classified as compound odontoma or complex. A 20-year retrospective study was performed on 36 odontomas from the files of the Department of Oral Pathology at Chosun University School of Dentistry. Fifty-six percent of the patients were compound odontoma and 44% were complex odontoma. 56 percent of the patients were female and 44% were male. The odontoma is most often diagnosed in the second decade of life, during routine radiographic examination. The usual presenting symptoms are an impacted or and unerupted tooth, a retained primary tooth. Other less frequent signs and symptoms are pain, swelling, suppuration, foul odor, tooth mobility. In our patients were treated by enucleation of the tumor, and related teeth were treated by surgical extraction or orthodontically assisted eruption.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07b
• /
• pp.1276-1279
• /
• 2005

The long-term stability of pentacene thin-film transistors (TFTs) encapsulated with a transparent $SnO_2$ thin-film prepared by ion beam assisted deposition (IBAD) was investigated. With a buffer layer of thermally evaporated 100 nm $SnO_2$ film deposited prior to IBAD process, our encapsulated OTFTs sustained its initial field-effect mobility up to one month and then gradually degraded showing only 37% reduction compared to 90% reduction of non-encapsulated OTFTs after 100 days in air ambient. The encapsulated OTFTs also exhibited superior on/off current ratio of over $10^5$ to that of the unprotected devices $({\sim}10^4)$ which was reduced from ${\sim}10^6$ before aging. Therefore, the enhanced long-term stability of our encapsulated OTFTs should be attributed to well protection of permeation of $H_2O$ and $O_2$ into the devices by the IBAD $SnO_2$ thin-film which could be used as an effective inorganic gas barrier for transparent organic electronic devices.

• Journal of the Korean institute of surface engineering
• /
• v.39 no.6
• /
• pp.250-254
• /
• 2006

Effect of hydrogen partial pressure ratio on the structural and electrical properties of highly c-axis oriented ZnO films deposited by oxygen ion-assisted pulsed filtered vacuum arc at a room temperature was investigated. The hydrogen partial pressure ratio were $1.4%\sim9.8%$ at 40% oxygen pressure ratio. The conductivity of ZnO:H films was increased from 1.4% up to 4.2% due to relatively high carrier mobility caused by improvement of crystallinity While the conductivity of ZnO:H films were decreased over than 4.2% and (0002) orientation was also deteriorated. The lowest resistivity of ZnO:H films was $2.5{\times}10^{-3}\;{\Omega}{\cdot}cm$ at 4.2% of hydrogen pressure ratio. Transmittance of ZnO:H films in visible range was 85% which is lower than that of undoped ZnO films because of declined preferred orientation.