• Title/Summary/Keyword: mobility method

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The Effect of Thermal Annealing and Growth of CdGa2Se4 Single Crystal Thin Film by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE)법에 의한 CdGa2Se4 단결정 박막 성장과 열처리 효과)

  • Hong, Myung-Seok;Hong, Kwang-Joon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.10
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    • pp.829-838
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    • 2007
  • The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD).The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}\;cm^{-3},\;345\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $Eg(T)\;=\;2.6400\;eV\;-\;(7.721{\times}10^{-4}\;eV/K)T^2/(T+399\;K)$. After the as-grown single crystal $CdGa_2Se_4$ thin films were annealed in Cd-, Se-, and Ga -atmospheres, the origin of point defects of single crystal $CdGa_2Se_4$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. We concluded that the heat-treatment in the Cd-atmosphere converted single crystal $CdGa_2Se_4$ thin films to an optical p-type. Also, we confirmed that Ga in $CdGa_2Se_4/GaAs$ did not form the native defects because Ga in single crystal $CdGa_2Se_4$ thin films existed in the form of stable bonds.

A Scheme for Network Selection and Heterogeneous Handover in Hierarchical Wireless Multiple Access Networks with IMS (IMS를 포함한 계층적 무선 멀티 억세스 네트워크에서의 네트워크 선택 및 핸드오버 기법)

  • Moon, Tae-Wook;Kim, Moon;Cho, Sung-Joon
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.46 no.5
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    • pp.146-153
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    • 2009
  • Recently, the research relative to NGN(Next Generation Network) is progressing in 3GPP(The 3rd Generation Partnership Progect), IETF(Internet Engineering Task Force), and so on. Although user needs frequently mobility which is various service pattern, In accordance with the development of these various applications, IMS(IP Multimedia Subsystem) and hierarchical networks ie, Femtocell/WiBro/3G etc is constructed for more user demands which provide service in anytime, anywhere. It is necessary to optimum network selection criterion which consider to wireless signal quality add to user service profile and service network traffic balance. NGN also needs a method to perform heterogeneous handover and to constraint Ping-pong phenomenon when using existing terminal-based handover decision. This paper proposes scheme for network selection and heterogeneous handover procedure in hierarchical wireless multi-access network based on SIP-MIH(Session Initiation Protocol-Media Independent Handover) with IMS by using user service profile that the considerations are dealing with not only selection and registration of various access network but also easy of developing the terminal.

Analysis of Scientific Models in the Earth Domain of the 10th Grade Science Textbooks (10학년 과학 교과서 지구 분야에 등장하는 과학적 모델 분석)

  • Oh, Phil-Seok;Jon, Won-Son;Yoo, Jung-Moon
    • Journal of the Korean earth science society
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    • v.28 no.4
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    • pp.393-404
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    • 2007
  • The purpose of this study was to identity scientific models included in the Earth domain of the $10^{th}$ grade science textbooks. Three earth science-related chapters in each of 11 trade books were analyzed. A framework was developed and used to classify a scientific model from three different perspectives: medium of representation, method of representation, and mobility of a model. Results showed that the science textbooks utilized domain-specific models in which the nature of sub-areas of earth science was embedded. That is, the unit of 'Change of the Earth' included many iconic models that represented the inaccessible inner structure of the earth and the movement of the tectonic plates. These were also two-dimensional pictorial and static models. In the chapter of 'Atmosphere and Oceans', symbolic and diagrammatic models were dominant in use, which included weather maps and contour line graphs of sea surface temperature and salinity. The unit of 'Solar System and Galaxies' showed the highly frequent use of iconic and analogical models for the large-scale celestial objects and their movements. Implications for earth science education and relevant research were discussed.

Cumulative Deposition of $^{137}Cs$ in the Soil of Korea (한국토양에 존재하는 $^{137}Cs$ 방사능 분포)

  • Lee, Myung-Ho;Choi, Yong-Ho;Shin, Hyun-Sang;Kim, Sang-Bog;Lee, Chang-Woo
    • Journal of Radiation Protection and Research
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    • v.23 no.2
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    • pp.97-102
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    • 1998
  • The cumulative deposition of $^{137}Cs$ in the soil of Korea has been studied. Using ${\gamma$-ray spertrometry, the conrentrations of $^{137}Cs$ were determined for the soil samples collected to a depth of 20 cm. The average accumulated depositions of $^{137}Cs$ were estimated roughly to be 2,501 ${\pm}$ $m^{-2}$ in the forest and 1,058 ${\pm}$ 322 Bq $m^{-2}$ in the hill. The inventory value of $^{137}Cs$ in the forest is about two times higher than that in the hill. Except for some cases, the concentrations of $^{137}Cs$ in the undisturbed soils decreased exponentially with increasing the soil depth. The influences of rainfall, organic matter content, clay content and pH on the deposition of $^{137}Cs$ were studied using the field method. Among these factors, the organic matter content played the most important role in the retention and relative mobility of $^{137}Cs$ in the soil. The other factors such as rainfall, clay content and pH showed weak correlation with the deposition of $^{137}Cs$ in the soil.

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A Study on Effects of the Service Quality and the Usage Review Characteristics of Smartphone Majib App on Satisfaction and Reuse Intention of Majib App (스마트폰 맛집 앱 서비스품질과 사용후기 특성이 앱만족 및 재이용의도에 미치는 영향에 관한 연구)

  • Han, Ji-Soo
    • Culinary science and hospitality research
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    • v.22 no.2
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    • pp.234-251
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    • 2016
  • The purpose of this study is to verify the effects of service quality and usage review of smartphone Maiib application(apps) on satisfaction, and reuse intention, convenience sampling method was employed and survey was conducted during the 15th of September, 2015 to the 30th on October as perceived by smartphone Maiib app users. Total of 312 responses were collected, and 295 usable data were used for statistical analysis excluding missing data. Descriptive analysis, factor analysis, and SEM were used to verify the hypothesis. The results from this study are as follows: first, reliability, empathy, usefulness of service quality significantly impact on Majib app satisfaction except informativeness and mobility; second, review assentation of the usage review characteristics significantly impact on Majib app satisfaction but review usefulness of the usage review characteristics significantly did not influence on Majib app satisfaction; third, smartphone Majib app satisfaction critically influences on reuse intention. Based on these results, current study can contribute to verify useful information is very important antecedent to construct the effective marketing strategy by smartphone app.

The success rate of Mg-incorporated oxidized implants in partially edentulous patients: a prospective clinical study (부분 무치악 환자에서 마그네슘 이온주입 임플란트의 성공률에 대한 전향적 임상연구)

  • Choi, Su-Jung;Yoo, Jung-Ho;Lee, Ku-Bok;Kim, Jin-Wook
    • The Journal of Korean Academy of Prosthodontics
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    • v.50 no.3
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    • pp.176-183
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    • 2012
  • Purpose: This study examined the clinical success rate of Mg titanate implants (M Implant system, Shinhung, Korea), which employ a Mg coating method, by evaluating the marginal bone loss and implant stability using radiographs and Osstell$^{(R)}$, over a 1 year. Materials and methods: The locations of the implants placement were divided into 4 areas; the maxillary and mandibular premolars and molars. In the maxilla, 8 and 9 implants were inserted in the premolar and molar areas, respectively. In the mandible, 11 and 51 implants were inserted in the premolar and molar areas. Marginal bone loss and ISQ of all implants (79) were measured after insertion, mounting the prosthetic appliance, and 1, 3, 6, and 12 months after loading. The marginal bone loss was measured from the radiograph using XCP bite, which was customized, and the implant stability measured using Osstell$^{(R)}$. Fisher's exact test (${\alpha}$=.05) was used to compare the success rates of each region. Results: The mean marginal bone loss for the upper and lower jaws were 1.537 mm and 1.172 mm. The mobility showed a non-significant reduction or increase according with time. The success rates were accounted for 94.12% and 98.39% in the upper and lower jaws; the premolars and molars were accounted for 100% and 96.67%. The two cases of early failure resulted from failure of primary stability during implant insertion. The late failures were not observed for 1 year after adding a loading to the implants. Conclusion: The Mg titanate implant showed good primary stability and good clinical results in both healing and function.

Digital Replantation in Industrial Punch Injuries (천공 펀치 기계에 의한 수지 절단부의 재접합술)

  • Lee, Kyu-Cheol;Lee, Dong-Chul;Kim, Jin-Soo;Ki, Sae-Hwi;Roh, Si-Young;Yang, Jae-Won
    • Archives of Reconstructive Microsurgery
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    • v.19 no.1
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    • pp.12-20
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    • 2010
  • Purpose: Industrial punch accidents involving fingers cause segmental injuries to tendons and neurovascular bundles. Although multiple-level segmental amputations are not replanted to regain function, most patients with an amputated finger want to undergo replantation for cosmetic as much as functional reason. The authors describe four cases of digital amputation by an industrial punch that involved the reinstatement of the amputated finger involving a joint and neurovascular bundle. Amputated segments were replanted to restore amputated surfaces and distal segments. Methods: A single institution retrospective review was performed. Inclusion criteria of punch injuries requiring replantation were applied to patients of all demographic background. Injury extent (size, tissue involvement), operative intervention, pre- and postoperative hand function were recorded. Result: Four cases of amputations were treated at our institute from 2004 to 2008 from industrial punch machine injury. Average patient age was 32.5 years (25~39 years) and there were three males and one female. Sizes of amputated segments ranged from $1.0{\times}1.0{\times}1.2\;cm^3$ to $3{\times}1.5{\times}1.6\;cm^3$. Tenorrhaphy was conducted after fixing fractured bone of the amputated segments with K-wire. Proximal and distal arteries and veins were repaired using the through & through method. The average follow-up period was thirteen months (2~26 months), and all replanted cases survived. Osteomyelitis occurred in one case, skin grafting after debridement was performed in two cases. Because joints were damaged in all four cases, active ranges of motion were much limited. However, a secondary tendon graft enhanced digit function in two cases. The two-point discrimination test showed normal values for both static and dynamic tests for three cases and 9 mm and 15 mm by dynamic and static testing, respectively, in one case. Conclusion: Though amputations from industrial punch machines are technically challenging to replant, our experience has shown it to be a valid therapy. In cases involving punch machine injury, if an amputated segment is available, the authors recommend that replantation be considered for preservation of finger length, joint mobility, and overall functional recovery of the hand.

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Studies on the Fabrication of 0.2 ${\mu}m$Wide-Head T-Gate PHEMT′s (0.2 ${\mu}m$ Wide-Head T-Gate PHEMT 제작에 관한 연구)

  • Jeon, Byeong-Cheol;Yun, Yong-Sun;Park, Hyeon-Chang;Park, Hyeong-Mu;Lee, Jin-Gu
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.1
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    • pp.18-24
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    • 2002
  • n this paper, we have fabricated pseudomorphic high electron mobility transistors (PHEMT) with a 0.2 ${\mu}{\textrm}{m}$ wide-head T-shaped gate using electron beam lithography by a dose split method. To make the T-shape gate with gate length of 0.2 ${\mu}{\textrm}{m}$ and gate head size of 1.3 ${\mu}{\textrm}{m}$ we have used triple layer resist structure of PMMA/P(MMA-MAA)/PMMA. The DC characteristics of PHEMT, which has 0.2 ${\mu}{\textrm}{m}$ of gate length, 80 ${\mu}{\textrm}{m}$ of unit gate width and 4 gate fingers, are drain current density of 323 ㎃/mm and maximum transconductance 232 mS/mm at $V_{gs}$ = -1.2V and $V_{ds}$ = 3V. The RF characteristics of the same device are 2.91㏈ of S21 gain and 11.42㏈ of MAG at 40GHz. The current gain cut-off frequency is 63GHz and maximum oscillation frequency is 150GHz, respectively.ively.

Photocurrent Study on the Splitting of the Valence Band and Growth of $AgInS_2$GaAs Single Crystal Thin Film by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE)법에 의한 $AgInS_2$단결성 박막의 성장과 가전자대 갈라짐에대한 광전류 연구)

  • 홍광준
    • Korean Journal of Crystallography
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    • v.12 no.4
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    • pp.197-206
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    • 2001
  • A stoichiometric mixture of evaporating materials for AgInS₂ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films. AgInS₂ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE)system. The source and substrate temperatures were 680℃ and 410℃, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS₂ single crystal thin film mea-sured from Hall effect by van der Pauw method are 9.35×10/sup 16/㎤ and 294㎠/V·s at 293K respectively. The temperature dependence of the energy band gap of the AgInS₂ obtained from the absorption spectra was well described by the Varshni's relation , E/sub g/(T)=2.1365eV-(9.89×10/sup-3/eV/K/)T²(T+2930K). The crystal field and the spin-orbit splitting energies for the valence band of the AgInS₂ have been estimated to be 0.1541eV and 0.0129 eV, respectively, by means of the photocur-rent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the Γ/sub 5/ states of the valence band of the AgInS₂ /GaAs epilayer. The three photo-current peaks ovserved at 10K are ascribed to the A₁-, B-₁and C₁-exction peaks for n=1.

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Growth and Characterization of $ZnGa_2Se_4$ Single Crystal Thin Films by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE)에 의한 $ZnGa_2Se_4$단결정 박막 성장과 특성에 관한 연구)

  • 장차익;홍광준;정준우;백형원;정경아;방진주;박창선
    • Korean Journal of Crystallography
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    • v.12 no.3
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    • pp.127-136
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    • 2001
  • A stoichiometric mixture of evaporating materials for ZnGa₂Se₄single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, ZnGa₂Se₄mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were 610℃ and 450℃, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnGa₂Se₄single crystal thin films measured from Hall effect by von der Pauw method are 9.63×10/sup 17/㎤ and 296 ㎠/V·s at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa₂Se₄single crystal thin film, we have found that the values of spin orbit splitting △so and the crystal field splitting Δcr were 251.9meV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on th ZnGa₂Se₄single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (A°, X) having very strong peak intensity. Then, the full-width-at-half-maximum (FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.

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