• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.1131-1137
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• 2015

Gallium nitride (GaN) is a promising material for next-generation high-power applications due to its wide bandgap, high breakdown field, high electron mobility, and good thermal conductivity. From a structure point of view, the vertical device is more suitable to high-power applications than planar devices because of its area effectiveness. However, it is challenging to obtain a completely upright vertical structure due to inevitable sidewall slope in anisotropic etching of GaN. In this letter, we design and analyze the enhancement-mode n-channel vertical GaN MOSFET with variation of sidewall gate angle by two-dimensional (2D) technology computer-aided design (TCAD) simulations. As the sidewall slope gets closer to right angle, the device performances are improved since a gradual slope provides a leakage current path through the bulk region.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.31-33
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• 2002

Si TFTs are applied not only to stacked SRAM but also to FPD. Improvement of device characteristic such as an enhancement of carrier mobility or a reduction of leakage current is studied intensively. The TFT technology is developing based on conventional Si LSI technology. By establishing a stable fabrication process on flexible substrate and high performance characteristic uniformly and reliably, TFT technology has a possibility to develop to SOP or other highly functional applications similar to or beyond the conventional Si LSI in the era of information and telecommunication.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.154-155
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• 2012

In this work, we report the comprehensive study of performance enhancement of InGaAs n-MOSFET by plasma $PH_3$ p assivation. The calibrated plasma $PH_3$ passivation of the InGaA ssurface before CVD high-k dielectric deposition significantly improves interface quality, resulting in suppressed frequency dispersion in C-V, increase in drive-current with high electron mobility, and excellent thermal stability.

• 한국사회복지학회:학술대회논문집
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• 2004.04a
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• pp.365-382
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• 2004

The purpose of this study was to explore the concepts of health among people with mobility disabilities in order to develop a new holistic model of health and to identify implications for social work practice. A qualitative study based on face-to-face interviews with people with mobility disabilities was conducted. Nine consumers and nine social workers with mobility disabilities participated in the study. Social constructionism, heuristic paradigm, empowerment paradigm, and strength perspectives were used to form conceptual foundations to guide the study. Study participants' holistic descriptions of the concept of health encompassed five domains: biological/physical, mental/emotional, financial, relationships with others, and spiritual. Participants described health as harmony among these five domains. Harmony indicates that all five domains contribute to the concept of health, and that each domain is related to the others. Participants also viewed disability and health as an interconnected whole, not separate concept. The conceptual model developed in this study expands on the existing concepts of health by considering multiple factors at the personal and environmental levels, as well as interactions among the factors and between the levels. The personal level has five domains: biological/physical, mental/emotional, spiritual, financial, and relationships with others. The environmental level has also five domains: relationship with others, financial, social programs, social attitudes toward peoplewith disabilities, and physical environment. All factors under the personal and environmental levels also affect each other. The holistic concept of health for people with disabilities is not solely a part of the person, but rather is a function of the interaction between the person and their environment. The study demonstrated that people with disabilities have strength and resiliency, and health is an attainable goal for them, particularly when environmental and cultural barriers are addressed. The focus of social work practice should be the removal of those barriers encountered by their consumers with disabilities, as well as, the enhancement of internal factors that facilitate well-being.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.2 no.1
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• pp.23-35
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• 2008

Mobile IP (MIP) is the solution supporting the mobility of Mobile Nodes (MNs), however, it is known to lack the support for NEtwork MObility (NEMO). NEMO manages situations when an entire network, composed of one or more subnets, dynamically changes its point of attachment to the Internet. NEMO Basic Support (NBS) protocol ensures session continuity for all the nodes in a mobile network, however, there exists a serious pinball routing problem. To overcome this weakness, there are many Route Optimization (RO) solutions such as Bi-directional Tunneling (BT) mechanism, Aggregation and Surrogate (A&S) mechanism, Recursive Approach, etc. The A&S RO mechanism is known to outperform the other RO mechanisms, except for the Binding Update (BU) cost. Although Improved Prefix Delegation (IPD) reduces the cost problem of Prefix Delegation (PD), a well-known A&S protocol, the BU cost problem still presents, especially when a large number of Mobile Routers (MRs) and MNs exist in the environment such as train, bus, ship, or aircraft. In this paper, a solution to reduce the cost of delivering the BU messages is proposed using a multicast mechanism instead of unicasting such as the traditional BU of the RO. The performance of the proposed multicast-based BU scheme is examined with an analytical model which shows that the BU cost enhancement is up to 32.9% over IPDbased, hence, it is feasible to predict that the proposed scheme could benefit in other NEMO RO protocols.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.6 no.9
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• pp.2118-2135
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• 2012

With the rapid development of heterogeneous emerging wireless technologies and numerous types of mobile devices, the need to support robust mobile video streaming based on the seamless handover in Future Internet is growing. To support the seamless handover, several IP-based mobility management protocols such as Mobile IPv6 (MIPv6), fast handover for the MIPv6 (FMIPv6), Hierarchical MIPv6 (HMIPv6) and Proxy Mobile IPv6 (PMIPv6) were developed. However, MIPv6 depreciates the Quality-of-Service (QoS) and FMIPv6 is not robust for the video services in heterogeneous emerging wireless networks when the Mobile Node (MN) may move to another visited network in contrast with its anticipation. In Future Internet, the possibility of mobile video service failure is more increased because mobile users consisting of multiple wireless network interfaces (WNICs) can frequently change the access networks according to their mobility in heterogeneous wireless access networks such as 3Generation (3G), Wireless Fidelity (Wi-Fi), Worldwide Interoperability for Microwave Access (WiMax) and Bluetooth co-existed. And in this environment, seamless mobility is coupled according to user preferences, enabling mobile users to be "Always Best Connected" (ABC) so that Quality of Experience is optimised and maintained. Even though HMIPv6 and PMIPv6 are proposed for the location management, handover latency enhancement, they still have limit of local mobility region. In this paper, we propose a robust mobile video streaming in Heterogeneous Emerging Wireless Systems. In the proposed scheme, the MN selects the best-according to an appropriate metric-wireless technology for a robust video streaming service among all wireless technologies by reducing the handover latency and initiation time when handover may fail. Through performance evaluation, we show that our scheme provides more robust mechanism than other schemes.

• Journal of Soil and Groundwater Environment
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• v.23 no.6
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• pp.46-53
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• 2018

Mobility reduction of 2,4,6-trinitrotoluene (TNT) was tested by amending monopotassium phosphate (MKP) and montmorillonite to a firing range soil contaminated with TNT. While addition of MKP enhanced sorption of TNT on soil matrix, and combined use of MKP with montmorillonite significantly decreased desorption of TNT as well as remarkably increased the TNT sorption. Montmorillonite amendment by 5% of soil mass resulted in TNT desorption of 0.12 mg/kg from soil loaded with 9.93 mg/kg-TNT. The decrease of TNT desorption was proportional to the amount of montmorillonite amended. At 10 and 15% amendment, only 0.79 and 1.23 mg/kg-TNT was desorbed from 29.33 and 48.80 mg/kg-TNT. In addition, the leaching of TNT with synthetic precipitation leaching procedure (SPLP) and hydroxypropyl-${\beta}$-cyclodextrin (HPCD) decreased, indicating that TNT in MKP/montmorillonite-treated soil became more stable and less leachable. The results demonstrate that addition of MKP and montmorillonite to TNT-contaminated soil reduces the mobility of TNT from soil not only by increasing TNT sorption, but also decreasing TNT desorption. It was found that MKP and montmorillonite amendments by 5 and 10% of soil mass, respectively, were optimal for reducing the mobility of soil TNT.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.376-376
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• 2012

Semiconductor nanowires (NWs) are future building block for nano-scale devices. Especially, Ge NWs are fascinated material due to the high electrical conductivity with high carrier mobility. It is strong candidate material for post-CMOS technology. However, thermal stability of Ge NWs are poor than conventional semiconductor material such as Si. Especially, when it reduced size as small as nano-scale it will be melted around CMOS process temperature due to the melting point depression. Recently, Graphene have been intensively interested since it has high carrier mobility with single atomic thickness. In addition, it is chemically very stable due to the $sp^2$ hybridization. Graphene films shows good protecting layer for oxidation resistance and corrosion resistance of metal surface using its chemical properties. Recently, we successfully demonstrated CVD growth of monolayer graphene using Ge catalyst. Using our growth method, we synthesized Ge/graphene core/shell (Ge@G) NW and conducted it for highly thermal stability required devices. We confirm the existence of graphene shell and morphology of NWs using SEM, TEM and Raman spectra. SEM and TEM images clearly show very thin graphene shell. We annealed NWs in vacuum at high temperature. Our results indicated that surface melting phenomena of Ge NWs due to the high surface energy from curvature of NWs start around $550^{\circ}C$ which is $270^{\circ}C$ lower than bulk melting point. When we increases annealing temperature, tip of Ge NWs start to make sphere shape in order to reduce its surface energy. On the contrary, Ge@G NWs prevent surface melting of Ge NWs and no Ge spheres generated. Furthermore, we fabricated filed emission devices using pure Ge NWs and Ge@G NWs. Compare with pure Ge NWs, graphene protected Ge NWs show enhancement of reliability. This growth approach serves a thermal stability enhancement of semiconductor NWs.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.62-62
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• 2015

In this study, we study the effects of CF4 plasma treatment on the characteristics of enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs). The CF4 plasma is generated by inductively coupled plasma reactive ion etching (ICP-RIE) system. The CF4 gas is decomposed into fluorine ions by ICP-RIE and then fluorine ions will effect the AlGaN/GaN interface to inhibit the electron transport of two dimension electron gas (2DEG) and increase channel resistance. The CF4 plasma method neither like the recessed type which have to utilize Cl2/BCl3 to etch semiconductor layer nor ion implantation needed high power to implant ions into semiconductor. Both of techniques will cause semiconductor damage. In the experiment, the CF4 treatment time are 0, 50, 100, 150, 200 and 250 seconds. It was found that the devices treated 100 seconds showed best electric performance. In order to prove fluorine ions existing and CF4 plasma treatment not etch epitaxial layer, the secondary ion mass spectrometer confirmed fluorine ions truly existing in the sample which treatment time 100 seconds. Moreover, transmission electron microscopy showed that the sample treated time 100 seconds did not have etch phenomena. Atomic layer deposition is used to grow Al2O3 with thickness 10, 20, 30 and 40 nm. In electrical measurement, the device that deposited 20-nm-thickness Al2O3 showed excellent current ability, the forward saturation current of 210 mA/mm, transconductance (gm) of 44.1 mS/mm and threshold voltage of 2.28 V, ION/IOFF reach to 108. As IV concerning the breakdown voltage measurement, all kinds of samples can reach to 1450 V.

• Proceedings of the Membrane Society of Korea Conference
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• 2004.05a
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• pp.82-85
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• 2004

Microinterface of W/Omicroemulsion prepared by phosphatidylcholine was used as reaction media of hydrolysis of phosphatidylcholine by phospholipaseA$_2$. Phosphatidylcholine was used as an amphiphile and was acted as a substrate. Organic phase of W/Omicroemulsion in this study was prepared by mixed organic solvents i.e. 2,2,4-trimethylpentane (isooctane) as a main solvent and 1-butanol as a co-solvent. The effect of added 1-butanol was remarkable not only on reaction beginning but also on high reaction rate. The hydrolysis reaction was dramatically initiated when 1-butanol was injected into the running isooctane/PC system. The enhancement by 1-butanol addition into single organic solvent was our original finding compare with previous conventional organic solvent. The reaction rate was elevated by the added amount of 1-butanol. The enhanced reaction rate was about 150-folds. This enhancement was speculated as 1-butanol adsorption on the microinterface. The adsorbed 1-butanol improved the properties of microinterface, especially its mobility was increased by difference of the chain length between phosphatidylcholine and 1-butanol. PhospholipaseA$_2$ molecules were located on the microinterface due to modified mobility of microinterface. Located phospholipaseA$_2$ on the microinterface reacted easily with phosphatidylcholine molecule. As a result high reaction rate was obtained. Microinterfacial properties were successfully improved by adsorbed 1-butanol molecule, and were favorable to appear higher reactivity of phospholipaseA$_2$.