Proceedings of the Korean Institute of Surface Engineering Conference (한국표면공학회:학술대회논문집)

The Korean Institute of Surface Engineering (한국표면공학회)
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Interface engineering for high-k dielectric integration on III-V MOSFETs

  • 이성주 (성균관대학교 성균나노과학기술원)
  • Published : 2012.05.31
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Abstract

In this work, we report the comprehensive study of performance enhancement of InGaAs n-MOSFET by plasma $PH_3$ p assivation. The calibrated plasma $PH_3$ passivation of the InGaA ssurface before CVD high-k dielectric deposition significantly improves interface quality, resulting in suppressed frequency dispersion in C-V, increase in drive-current with high electron mobility, and excellent thermal stability.

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