• International journal of advanced smart convergence
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• v.8 no.1
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• pp.9-17
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• 2019

In this article, we present a performance enhancement scheme for mobile applications by adopting persistent memory. The proposed scheme supports the deadline guarantee of real-time applications like a video player, and also provides reasonable performances for non-real-time applications. To do so, we analyze the program execution path of mobile software platforms and find two sources of unpredictable time delays that make the deadline-guarantee of real-time applications difficult. The first is the irregular activation of garbage collection in flash storage and the second is the blocking and time-slice based scheduling used in mobile platforms. We resolve these two issues by adopting high performance persistent memory as the storage of real-time applications. By maintaining real-time applications and their data in persistent memory, I/O latency can become predictable because persistent memory does not need garbage collection. Also, we present a new scheduler that exclusively allocates a processor core to a real-time application. Although processor cycles can be wasted while a real-time application performs I/O, we depict that the processor utilization is not degraded significantly due to the acceleration of I/O by adopting persistent memory. Simulation experiments show that the proposed scheme improves the deadline misses of real-time applications by 90% in comparison with the legacy I/O scheme used in mobile systems.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.1
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• pp.79-89
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• 2014

It has been an increase in consumers who want a high-capacity and fast speed by the newly diffused mobile device(Smart phones, Ultra books, Tablet PC). As a result, the demand for Flash Memory is constantly increasing. Flash Memory is separated by a NAND-type and NOR-type. NAND-type Flash Memory speed is slow, but price is cheaper than the NOR-type Flash Memory. For this reason, NAND-type Flash Memory is widely used in the mobile market. So Fault Detection is very important for Flash Memory Test. In this paper, Proposed PMBIST for Pattern Test of NAND-type Flash Memory improved Fault detection.

• Journal of the Korea Society of Computer and Information
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• v.25 no.6
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• pp.99-107
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• 2020

In this paper, we analyze the characteristics of mobile cache, which is used to improve the data access speed when executing applications on mobile devices, and verify the importance of mobile cache through a cache data access experiment. The mobile device market has grown at a fast pace over the past decade; however, battery limitations and size, price considerations restrict the usage of fast hardware. Thus, their performance are supplemented by using a memory buffer structure such as the cache memory. The analysis mainly focuses on cache size, hierarchical structure of cache, cache replacement policy, and the effect these features has on mobile performance. For the experimental data, we applied a data set from a microprocessor system study, originally used to test the cache performance. In the experimental results, the average data access speed on a mobile device showed a performance improvement of up to 10 times with the presence of cache memory than without. Accordingly, the cache memory was helpful for the performance improvement of a mobile device when the specifications were identical.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.192.1-192.1
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• 2015

We demonstrated the nonvolatile memory functionality of nano-crystalline silicon (nc-Si) and InGaZnOxide (IGZO) thin film transistors (TFTs) using mobile protons that are generated by very short time hydrogen neutral beam (H-NB) treatment in gate insulator (SiO2). The whole memory fabrication process kept under $50^{\circ}C$ (except SiO2 deposition process; $300^{\circ}C$). These devices exhibited reproducible hysteresis, reversible switching, and nonvolatile memory behaviors in comparison with those of the conventional FET devices. We also executed hydrogen treatment in order to figure out the difference of mobile proton generation between PECVD and H-NB CVD that we modified. Our study will further provide a vision of creating memory functionality and incorporating proton-based storage elements onto a probability of next generation flexible memorable electronics such as low power consumption flexible display panel.

• Journal of Information Display
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• v.9 no.1
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• pp.6-13
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• 2008

Mobile phones use the embedded memory in LDI (LCD Driver IC). In memory accessing mode, data overlapping phenomenon can occur. These days, various contents such as DMB, Camera, Game are merged to phone. Accordingly, with more data transmission, there would be more data overlapping phenomenon in memory accessing mode. Human eyes perceive this data overlapping phenomenon as simply horizontal line noise. The cause of the data overlapping phenomenon was analysed in this paper. The data overlapping phenomenon can be changed by the speed of data transmission between the host and LDI. The optimum memory accessing position can be defined. This paper proposes a new algorithm for avoiding data overlapping.

• International Journal of Internet, Broadcasting and Communication
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• v.15 no.1
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• pp.79-84
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• 2023

Due to the rapid performance improvement of smartphones, multitasking on mobile platforms has become an essential feature. Unlike traditional desktop or server environments, mobile applications are mostly interactive jobs where response time is important, and some applications are classified as real-time jobs with deadlines. When interactive and real-time jobs run concurrently, memory allocation between multitasking applications is a challenging issue as they have different time requirements. In this paper, we study how to allocate memory space when real-time and interactive jobs are simultaneously executed in a smartphone to meet the multitasking requirements between heterogeneous jobs. Specifically, we analyze the memory size required to satisfy the constraints of real-time jobs and present a new model for allocating memory space between heterogeneous multitasking jobs. Trace-driven simulations show that the proposed model provides reasonable performance for interactive jobs while guaranteeing the requirement of real-time jobs.

• Journal of Korea Multimedia Society
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• v.13 no.9
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• pp.1272-1284
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• 2010

As the mobile computers are becoming powerful and are used like general-purpose computers, operating systems for mobile computers also require swap system functionality that utilizes main memory efficiently. Flash memory is widely used as storage device for mobile computers but current linux swap system does not consider flash memory. Swap system is tightly related with process execution since it stores the contents of process in execution. By taking advantage of this characteristics, in this paper, we study a new linux swap system called PASS(Process-Aware Swap System), which allocates the different flash memory blocks to each process. Trace-driven experimental results show that PASS outperforms existing linux swap system with existing garbage collection schemes in terms of garbage collection cost.

• The Journal of Korean Institute of Next Generation Computing
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• v.13 no.4
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• pp.40-51
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• 2017

Recently, as mobile workloads are becoming more data-intensive, high data bandwidth is required for mobile memory which also consumes non-negligible system energy. A variety of researches and technologies are under development to improve and optimize mobile memory technologies. However, a comprehensive study on the latest mobile memory technologies (LPDDR or Wide I/O) has not been extensively performed yet. To construct high-performance and energy-efficient mobile memory systems, quantitative and detailed analysis of these technologies is crucial. In this paper, we simulate the computer system which adopts mobile DRAM technologies (Wide I/O and LPDDR3). Based on our detailed and comprehensive results, we analyze important factors that affect performance and energy-efficiency of mobile DRAM technologies and show which part can be improved to construct better systems.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.473-482
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• 2017

Hand gesture recognition is regarded as new Human Computer Interaction (HCI) technologies for the next generation of mobile devices. Previous hand gesture implementation requires a large memory and computation power for hand segmentation, which fails to give real-time interaction with mobile devices to users. Therefore, in this paper, we presents a low latency and memory-efficient hand segmentation architecture for natural hand gesture recognition. To obtain both high memory-efficiency and low latency, we propose a streaming hand contour tracing unit and a fast contour filling unit. As a result, it achieves 7.14 ms latency with only 34.8 KB on-chip memory, which are 1.65 times less latency and 1.68 times less on-chip memory, respectively, compare to the best-in-class.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.231-232
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• 2016

We have fabricated the nc-Si, IGZO based nonvolatile memory TFTs using mobile protons, which can be generated by simple hydrogen insertion process via H-NB treatment at room temperature. The TFT devices above exhibited reproducible hysteresis behavior, stable ON/OFF switching, and non-volatile memory characteristics. Also executed hydrogen treatment in order to figure out the difference of mobile proton generation between PECVD and our modified H-NB CVD. The room temperature proton-insertion process can reveal flexible inorganic based all-in-one display panel including driving circuit and memory circuit.