Early stage of heteroepitaxial Ge growth on Si(100) substrate with surface treatments using inductively coupled plasma (ICP) (ICP 표면 처리된 Si 기판 위에 성장된 Ge 층의 초기 성장 상태 연구)
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- Journal of the Korean Crystal Growth and Crystal Technology
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- v.21 no.4
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- pp.153-157
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- 2011