• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.13-22
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• 2004

In MEMS devices, packaging induced stress or stress induced structure deformation become increasing concerns since it directly affects the performance of the device. In this paper, deformation behavior of MEMS gyroscope package subjected to temperature change is investigated using high-sensitivity moire interferometry. Using the real-time moire setup, fringe patterns are recorded and analyzed at several temperatures. Temperature dependent analyses of warpages and extensions/contractions of the package are presented. Linear elastic behavior is documented in the temperature region of room temperature to $125^{\circ}C$. Analysis of the package reveals that global bending occurs due to the mismatch of thermal expansion coefficient between the chip, the molding compound and the PCB. Detailed global and local deformations of the package by temperature change are investigated, concerning the variation of natural frequency of MEMS gyro chip.

• Journal of the Korean Society for Nondestructive Testing
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• v.22 no.1
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• pp.45-52
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• 2002

It has been known that tensile residual stresses occurring by the thermal expansion coefficient mismatch between fiber and matrix is a cause of the weak strength of metal matrix composites(MMCs). In order to solve this problem, TiNi alloy fiber was used as a reinforced material in TiNi/A16001 shape memory alloy composite in this study. TiNi alloy fiber improves the tensile strength of the composite by causing compressive residual stress in matrix on the basis of its shape memory effect. Pre-strain was imposed to generate the compressive residual stresses inside the TiNi/A16001 shape memory alloy composites. AE technique was used to quantify the microscopic damage behavior of the composite at high temperature. The effect of applied pre-strains on the AE behavior was also evaluated.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.38 no.5
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• pp.483-487
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• 2014

In this study, joining methods with SiC powder as the joining adhesives were studied in order to avoid the residual stresses coming from CTE (Coefficient of Thermal Expansion) mismatch between substrate and joining layer. The shear strength and microstructure of joined material between SiC substrates are investigated. The commercial Hexoloy-SA (Saint-Gobain Ceramics, USA) used in this work as substrate material. The fine ${\beta}$-SiC nano-powder which the average particle size is below 30 nm, $Al_2O_3$, $Y_2O_3$, and $SiO_2$ were used as joining adhesives. The specimens were joined with 20MPa and $1400-1900^{\circ}C$ by hot pressing in argon atmosphere. The shear test was performed to investigate the bonding strength. The cross-section of the joint was characterized by using an optical microscope and scanning electron microscopy (SEM).

• Korean Journal of Materials Research
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• v.8 no.8
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• pp.744-750
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• 1998

Unlike common device, MEMS(micro-electro-mechanical system) device consists of very small mechanical structures which determine the performance of the device. Because of its small mechanical structure inside. MEMS device is very sensitive to thermal stress caused by CTE(coefficient of thermal expansion) mismatch between its components. Therefore, its characteristics are affected by material properties. process temperature. and dimensions of each layer such as chip, adhesive and substrate. In this study. we investigated the change of the thermal stress in the chip attached to a substrate. With computer-aided finite element method (FEM), the computer simulation of the thermal stress was conducted on variables such as bonding material, process temperature, bonding layer thickness and die size. The commercial simulation program, ABAQUS ver5.6, was used. Subsequently 3-layer test samples were fabricated, and their degree of bending were measured by 3-D coordinate measuring machine. The experimental results were in good agreement with the simulation results. This study shows that the bonding layer could be the source of stress or act as the buffer layer for stress according to its elastic modulus and CTE. Solder adhesive layer was the source of stress due to its high elastic modulus, therefore high compressive stress was developed in the chip. And the maximum tensile stress was developed in the adhesive layer. On the other hand, polymer adhesive layer with low elastic modulus acted as buffer layer, and resulted in lower compressive stress. The maximum tensile stress was developed in the substrate.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.1
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• pp.17-22
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• 2016

Flexible organic light-emitting diode (OLED) devices consist of multi-stacked thin films or layers comprising organic and inorganic materials. Due to thermal coefficient mismatch of the multi-layer films, warpage of the flexible OLED is generated during high temperature process of each layer. This warpage will create the critical issues for next production process, consequently lowering the production yield and reliability of the flexible OLED. In this study, we investigate the warpage behavior of the flexible OLED for each bonding process step of the multi-layer films using the experimental and numerical analysis. It is found that the polarizer film and barrier film show significant impact on warpage of flexible OLED, while the impact of the OCA film on warpage is negligible. The material that has the most dominant impact on the warpage is a plastic cover. In order to minimize the warpage of the flexible OLED, we estimate the optimal material properties of the plastic cover using design of experiment. It is found that the warpage of the flexible OLED is reduced to less than 1 mm using a cover plastic of optimized properties which are the elastic modulus of 4.2 GPa and thermal expansion coefficient of $20ppm/^{\circ}C$.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.36 no.2
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• pp.187-194
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• 2012

The strength of particle-reinforced metal matrix composites is, in general, known to be increased by the geometrically necessary dislocations punched around a particle that form during cooling after consolidation because of coefficient of thermal expansion (CTE) mismatch between the particle and the matrix. An additional strength increase may also be observed, since another type of geometrically necessary dislocation can be formed during extensive deformation as a result of the strain gradient plasticity due to the elastic-plastic mismatch between the particle and the matrix. In this paper, the magnitudes of these two types of dislocations are calculated based on the dislocation plasticity. The dislocations are then converted to the respective strengths and allocated hierarchically to the matrix around the particle in the axisymmetric finite-element unit cell model. The proposed method is shown to be very effective by performing finite-element strength analysis of $SiC_p$/Al2124-T4 composites that included ductile failure in the matrix and particlematrix decohesion. The predicted results for different particle sizes and volume fractions show that the length scale effect of the particle size obviously affects the strength and failure behavior of the particle-reinforced metal matrix composites.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.101-105
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• 2019

The adhesion reliability of the epoxy molding compound (EMC) and the printed circuit board (PCB) interface is critical to the quality and lifetime of the chip package since the EMC protects PCB from the external environment during the manufacturing, storage, and shipping processes. It is necessary to measure adhesion energy accurately to ensure product reliability by optimizing the manufacturing process during the development phase. This research deals with the measurement of EMC/PCB interfacial adhesion energy of chip package that has warpage induced by the coefficient of thermal expansion (CTE) mismatch. The double cantilever beam (DCB) test was conducted to measure adhesion energy, and the spring back force of specimens with warpage was compensated to calculate adhesion energy since the DCB test requires flat substrates. The result was verified by comparing the adhesion energy of flat chip packages come from the same manufacturing process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.1
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• pp.11-14
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• 2012

The AlGaN layer has direct wide bandgaps ranging from 3.4 to 6.2 eV. Nowadays, it is becoming more important to fabricate optical devices in an UV region for the many applications. The high quality AlGaN layer is necessary to establish the UV optical devices. However, the growth of AlGaN layer on GaN layer is difficult due to the lattice mismatch and difference thermal expansion coefficient between GaN layer and AlGaN layer. In this paper, we attempted to grow the LED structure on GaN template by mixed-source HVPE method with multi-sliding boat system. We tried to find the optical and lattice transition of active layer by control the Al content in mixed-source. For the growth of epi layer, the HCl and $NH_3$ gas were flowed over the mixed-source and the carrier gas was $N_2$. The temperature of source zone and growth zone was stabled at 900 and $1090^{\circ}C$, respectively. After the growth, we performed the x-ray diffraction (XRD) and electro luminescence (EL) measurement.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.1-7
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• 2004

Tin plating on component finishes may grow whiskers under certain conditions, which may cause failures in electronics equipment. To protect the environment, 'lead-free' among component finishes is being promoted worldwide. This paper presents the evaluation results of whiskers on two kinds of lead-free plating materials at the plating temperature and under the reliability test. The rising plating temperature caused increasing the size of plating grain and shorting the growth of whisker. The whisker was grown under the temperature cycling the bent type in matt Sn plating and striated type in malt Sn-Bi. The whisker growth in Sn-Bi plating was shorter than that in Sn plating. In FeNi42 leadframe, the $7.0{\~}10.0{\mu}m$ diameter and the $25.0{\~}45.0{\mu}m$ long whisker was grown under 300 cycles. In the 300 cycles of Cu leadframe, only the nodule(nuclear state) grew on the surface, and in the 600 cycles, a $3.0{\~}4.0{\mu}m$ short whisker grew. After 600 cycles, the ${\~}0.34{\mu}m$ thin $Ni_3Sn_4$ formed on the Sn-plated FeNi42. However, we observed the amount of $0.76{\~}1.14{\mu}m$ thick $Cu_6Sn_5$ and ${\~}0.27{\mu}m$ thin $Cu_3Sn$ intermetallics were observed between the Sn and Cu interfaces. Therefore, the main growth factor of a whisker is the intermetallic compound in the Cu leadframe, and the coefficient of thermal expansion mismatch in FeNi42.

• Journal of Energy Engineering
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• v.19 no.2
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• pp.73-80
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• 2010

A solid oxide fuel cells(SOFC) is a clean energy technology which directly converts chemical energy to electric energy. When the SOFC is used in cogeneration then the efficiency can reach higher than 80%. Also, it has flexibility in using various fuels like natural gases and bio gases, so it has an advantage over polymer electrolyte membrane fuel cells in terms of fuel selection. A typical cathode material of the SOFC in conjunction with yttria stabilized zirconia(YSZ) electrolyte is still Sr-doped $LaMnO_3$(LSM). Recently, application of mixed electronic and ionic conducting perovskites such as Sr-doped $LaCoO_3$(LSCo), $LaFeO_3$(LSF), and $LaFe_{0.8}Co_{0.2}O_3$(LSCF) has drawn much attention because these materials exhibit lower electrode impedance than LSM. However, chemical reaction occurs at the manufacturing temperature of the cathode when these materials directly contact with YSZ. In addition, thermal expansion coefficient(TEC) mismatch with YSZ is also a significant issue. It is important, therefore, to develop cathode materials with good chemical stability and matched TEC with the SOFC electrolyte, as well as with high electrochemical activity.