• Current Optics and Photonics
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• v.6 no.1
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• pp.32-38
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• 2022

Erbium-doped fiber amplifiers (EDFAs) have saturated the technological market but are still widely used in high-speed and long-distance communication systems. To overcome EDFA saturation and limitations, its erbium-doped fiber is co-doped with other materials such as zirconia and bismuth. This article demonstrates and compares the performance using three different fibers as the gain medium for zirconia-erbium-doped fibers (Zr-EDF), bismuth-erbium-doped fibers (Bi-EDF), and commercial silica-erbium-doped fibers (Si- EDF). The optical amplifier was configured with a double-pass amplification system, with a broadband mirror at the end of its configuration to allow double-pass operation in the system. The important parameters in amplifiers such as optical properties, optical amplification and noise values were also examined and discussed. All three fibers were 0.5 m long and entered with different input signals: 30 dBm for low input and 10 dBm for high input. Zr-EDF turned out to be the most relevant optical amplifier as it had the highest optical gain, longest transmission distance, highest average flatness gain with minimal jitter, and relevant noise figures suitable for the latest communication technology.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.5
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• pp.350-355
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• 2000

The fabrication of sapphire wafer in C plane has been developed by horizontal Bridgeman method and GaN based semiconductor epitaxial growth has been carried out in metal organic chemical vapour deposition. The single crystalline ingot of sapphire has been utilized for 2 inch sapphire wafers and wafer slicing and lapping machines were designed. These several steps of lapping processes provided the mirror-like surface of sapphire wafer. The measurements of the surface flatness and the roughness were carried out by the atomic force microscope. The GaN thin film growth on the developed wafer was confirmed the wafer quality and applicability to blue light emitting devices.

• Journal of the Optical Society of Korea
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• v.7 no.2
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• pp.64-66
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• 2003

The optical gain and noise figure improved double-pass two-stage EDFA using a mirror, circulator, and gain-flattening filters is proposed. By double passing the pump light and removing the ASE propagating into the input part, the signal gain of 5 ㏈ and noise figure of 2.1 ㏈ are improved compared to the conventional single- and double-pass EDFA With gain-fattening filters in the second stage of EDFA, we obtain an improved flat gain with a gain flatness less than 1 ㏈ over 33-nm wavelength range at the 980-nm pump power of 86 ㎽.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.3
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• pp.50-57
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• 2010

A high precision air bearing stage has been developed and calibrated. This linear-motor driven stage was designed to transport a glass or wafer with the X and Y following errors in nanometer regime. To achieve this level of precision, bar type mirrors were adopted for real time ${\Delta}X$ and ${\Delta}Y$ laser measurement and feedback control. With the laser wavelength variation and instability being kept minimized through strict environment control, the orthogonality of this type of control system becomes purely dependent upon the surface flatness, distortion, and assembly of the bar mirrors. Compensations for the bar mirror distortions and assembly have been performed using the self-calibration method. As a result, the orthogonality error of the stage was successfully decreased from $0.04^{\circ}$ to 2.48 arcsec.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.17 no.2
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• pp.1-6
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• 2008

In recent years, developments in the semiconductor and electronic industries have brought a rapid increase in the use of large size silicon wafer. For further improvement of the ultra precision surface and flatness of Si wafer necessary to high density ULSI, it is known that polishing is very important. However, most of these investigation was experiment less than 300mm diameter. Polishing is one of the important methods in manufacturing of Si wafers and in thinning of completed device wafers. This study reports the machining variables that has major influence on the characteristic of wafer polishing. It was adapted to polishing pressure, machining speed, and the slurry mix ratio, the optimum condition is selected by ultra precision wafer polishing using load cell and infrared temperature sensor. The optimum machining condition is selected a result data that use a pressure and table speed data. By using optimum condition, it achieves a ultra precision mirror like surface.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2003.09a
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• pp.67-67
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• 2003

It is crucial to minimize setup errors of a cancer treatment machine using a high energy and to perform precise radiation therapy. Usually, port film has been used for verifying errors. The Korea Cancer Center Hospital (KCCH) has manufactured digital electronic portal imaging device (EPID) system to verify treatment machine errors as a Quality Assurance (Q.A) tool. This EPID was consisted of a metal/fluorescent screen, 45$^{\circ}$ mirror, a camera and an image grabber and could display the portal image with near real time KIRAMS has also made the acrylic phantom that has lead line of 1mm width for ligh/radiation field congruence verification and reference points phantom for using as an isocenter on portal image. We acquired portal images of 10$\times$10cm field size with this phantom by EPID and portal film rotating treatment head by 0.3$^{\circ}$, 0.6$^{\circ}$ and 0.9$^{\circ}$. To check field size, we acquired portal images with 18$\times$18cm, 19$\times$19cm and 20$\times$20cm field size with collimator angle 0$^{\circ}$ and 0.5$^{\circ}$ individually. We have performed Flatness comparison by displaying the line intensity from EPID and film images. The 0.6$^{\circ}$ shift of collimator angle was easily observed by edge detection of irradiated field size on EPID image. To the extent of one pixel (0.76mm) difference could be detected. We also have measured field size by finding optimal threshold value, finding isocenter, finding field edge and gauging distance between isocenter and edge. This EPID system could be used as a Q.A tool for checking field size, light/radiation congruence and flatness with a developed video based EPID.