• Title/Summary/Keyword: migration process

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Optimization of Process Variables in Copper Infiltration of Low and High Density Ferrous Structural Parts

  • Joys, Jessu;Luk, Sydney
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09b
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    • pp.826-827
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    • 2006
  • Copper infiltration is demonstrated as a viable solution to achieve higher mechanical properties by filling the interconnected porosities of a ferrous structure with copper infiltrant. This paper will present the results of a design of experiments study based on the selected processing variables in the copper infiltration process. The variables are the following: Infiltrating temperatures, infiltrating time at pre-heat zone and hot zone, the green density of iron part, the migration of copper into the iron part at different processing conditions. The results show the flexibility of the infiltration process to attain certain mechanical properties by changing the processing conditions.

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A Study of the Electrical Characteristics of WOx Material for Non-Volatile Resistive Random Access Memory (비-휘발성 저항 변화 메모리 응용을 위한 WOx 물질의 전기적 특성 연구)

  • Jung, Kyun Ho;Kim, Kyong Min;Song, Seung Gon;Park, Yun Sun;Park, Kyoung Wan;Sok, Jung Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.5
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    • pp.268-273
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    • 2016
  • In this study, we observed current-voltage characteristics of the MIM (metal-insulator-metal) structure. The $WO_x$ material was used between metal electrodes as the oxide insulator. The structure of the $Al/WO_x/TiN$ shows bipolar resistive switching and the operating direction of the resistive switching is clockwise, which means set at negative voltage and reset at positive voltage. The set process from HRS (high resistance state) to LRS (low resistance state) occurred at -2.6V. The reset process from LRS to HRS occurred at 2.78V. The on/off current ratio was about 10 and resistive switching was performed for 5 cycles in the endurance characteristics. With consecutive switching cycles, the stable $V_{set}$ and $V_{reset}$ were observed. The electrical transport mechanism of the device was based on the migration of oxygen ions and the current-voltage curve is following (Ohm's Law ${\rightarrow}$ Trap-Controlled Space Charge Limited Current ${\rightarrow}$ Ohm's Law) process in the positive voltage region.

Reset-first Resistance Switching Mechanism of HfO2 Films Based on Redox Reaction with Oxygen Drift-Diffusion

  • Kim, Jong-Gi;Lee, Sung-Hoon;Lee, Kyu-Min;Na, Hee-Do;Kim, Young-Jae;Ko, Dae-Hong;Sohn, Hyun-Chul
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.286-287
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    • 2012
  • Reset-first resistive switching mechanism based on reduction reaction in HfO2-x with oxygen drift-diffusion was studied. we first report that the indirect evidence of local filamentary conductive path formation in bulk HfO2 film with local TiOx region at Ti top electrode formed during forming process and presence of anion-migration at interface between electrode and HfO2 during resistive switching through high resolution transmission electron microscopy (HRTEM), electron disperse x-ray (EDX), and electron energy loss spectroscopy (EELS) mapping. Based on forming process mechanism, we expected that redox reaction from Ti/HfO2 to TiOx/HfO2-x was responsible for an increase of initial current with increasing the post-annealing process. First-reset resistive switching in above $350^{\circ}C$ annealed Ti/HfO2 film was exhibited and the redox phenomenon from Ti/HfO2 to TiOx/HfO2-x was observed with high angle annular dark field (HAADF) - scanning transmission electron microscopy (STEM), EDX and x-ray photoelectron spectroscopy. Therefore, we demonstrated that the migration of oxygen ions at interface region under external electrical bias contributed to bipolar resistive switching behavior.

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A Study on Low Residue Flux for Improving Flip Chip Non-wet and Reliability (Flip Chip Non-wet 개선 및 신뢰성 향상을 위한 Low Residue Flux 구현 방안 연구)

  • Lee, Hyunsuk;Kim, Minseok;Kim, Taehoon;Moon, Kiill
    • Journal of the Microelectronics and Packaging Society
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    • v.28 no.2
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    • pp.45-50
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    • 2021
  • As the difficulty of flip chip products increases, there is a growing interest in the material of flux, which is safe from the solder wetting and reliability. In the case of no clean flux, there is merit in terms of process efficiency because there is no cleaning process. But Cu migration and delamination can be occurred if the residue remains after the reflow process. In this study, major element materials, solvent and activator, are changed and confirmed effect of non-wet and reliability in the package environment. Stability of materials were secured through storage stability evaluation, and we found out non-wet zero materials through the application of two types of solvent and activator with different boiling point and the increase of activator content. After reliability test, no delamination was found in the plane analysis, which secured the final composition of low residue flux.

The Process of Capital Accumulation through Migration in the World-systems: A Case Study of Korean-Chinese(Chosonjok) Returnee Small Business Owners in Yanbian, China (세계체제 간극을 활용한 국제 이주를 통한 자본축적 과정: 옌볜 귀환 조선족 자영업자를 사례로)

  • Chi, Sang-Hyun;Lee, Sung-Cheol;Chung, Su-Yeul
    • Journal of the Economic Geographical Society of Korea
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    • v.22 no.4
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    • pp.422-437
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    • 2019
  • Compared to the significant number of researches on international immigration, there has been less attention to return migration. This is partly because return migration has been understood as a simple phenomenon resulted from a successful return with accumulated capital or adaptation failure. Since the mid-1990s, a large number of Korean-Chinese have migrated to Korea, and recently it became more common to witness the return of them. This study examines the strategic choice of self-employed Korean-Chinese returning to Yanbian, Recently, an increasing number of Korean-Chinese starts a small business, such as restaurants in Yanbian after accumulating capital in Korea. The relatively short stay in Korea is not only for saving money to initiate their own business. Rather, they could obtain new business opportunities in Yanbian by using the experiences and networks built in Korea. In short, the return migration of the Korean-Chinese to Yanbian can be understood as a strategy of capital accumulation utilizing the gap in the World-systems.

Effect of a Mixture of Centella asiatica and Rosamarinus officinalis Leaf Extracts on Delayed Cortisol-induced Keratinocyte Migration (병풀과 로즈마리 잎 추출 혼합물의 코티솔로 유도된 각질형성세포 이동지연에 미치는 영향)

  • WonTae Jo;Miji Yeom;ShinHwan Cho;Eunae Cho;Deokhoon Park;Eunsun Jung
    • Journal of the Society of Cosmetic Scientists of Korea
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    • v.50 no.2
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    • pp.111-118
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    • 2024
  • A key component of wound healing is epithelialization, which involves the proliferation and migration of epidermal keratinocytes surrounding the wound. Increasing cortisol, a stress hormone, is known to slow the healing process by inhibiting cell proliferation and migration. This study aims to develop an ingredient that can promote delayed wound healing by cortisol through a combination of Centella asiatica (C. asiatica), known for its excellent wound healing effect, and Rosamarinus officinalis (R. officinalis) leaf known for their antipsychotic effect. R. officinalis leaf extract was found to inhibit the activity of 11β-HSD1, an enzyme involved in the production of cortisol. A combination of C. asiatica and R. officinalis leaf extracts (AlfaCalm) was found to enhance cortisol induced delayed keratinocyte migration to a greater extent than C. asiatica extract. AlfaCalm enhanced the expression of CDC42 and the formation of filopodia, which are crucial for the relaxation of the actin skeleton. These results suggest that AlfaCalm can be used as an effective wound healing material in stress condition.

Planarizaiton of Cu Interconnect using ECMP Process (전기화학 기계적 연마를 이용한 Cu 배선의 평탄화)

  • Jeong, Suk-Hoon;Seo, Heon-Deok;Park, Boum-Young;Park, Jae-Hong;Jeong, Hae-Do
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.3
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    • pp.213-217
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    • 2007
  • Copper has been used as an interconnect material in the fabrication of semiconductor devices, because of its higher electrical conductivity and superior electro-migration resistance. Chemical mechanical polishing(CMP) technique is required to planarize the overburden Cu film in an interconnect process. Various problems such as dishing, erosion, and delamination are caused by the high pressure and chemical effects in the Cu CMP process. But these problems have to be solved for the fabrication of the next generation semiconductor devices. Therefore, new process which is electro-chemical mechanical polishing(ECMP) or electro-chemical mechanical planarization was introduced to solve the technical difficulties and problems in CMP process. In the ECMP process, Cu ions are dissolved electrochemically by the applying an anodic potential energy on the Cu surface in an electrolyte. And then, Cu complex layer are mechanically removed by the mechanical effects between pad and abrasive. This paper focuses on the manufacturing of ECMP system and its process. ECMP equipment which has better performance and stability was manufactured for the planarization process.

A Study on the Application of Elliptic Curve Cryptography to EMV (타원 곡선 암호의 EMV 적용에 관한 연구)

  • Kim, Woong;Lim, Dong-Jin
    • Proceedings of the KIEE Conference
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    • 2005.05a
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    • pp.269-271
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    • 2005
  • EMV was formed in February 1999 by Europay International, MasterCard International and Visa International to manage, maintain and enhance the EMV Integrated Circuit Card Specifications for Payment Systems as technology advances and the implementation of chip card programs become more prevalent. The formation of EMV ensures that single terminal and card approval processes are developed at a level that will allow cross payment system interoperability through compliance with the EMV specifications. A credit card environment of the domestic market adopted the standard Local-EMV to have the compatibility with EMV international standard and the EMV migration have been carried out b,# the step-by-step process. It may be possible to adopt various kinds of cryptographic algorithms, however, RSA public key algorithm is currently used. In this paper, as a public key algorithm for the authentication process, Elliptic Curve Cryptographic algorithm is applied to the EMV process. Implementation results is shown. and the possible changes necessary to accommodate Elliptic Curve Cryrtography is proposed.

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Si-buffer pinholes in the SEPOX (selective poly oxidation) process (SEPOX (selective poly oxidation) process에서 Si-buffer layer에 발생하는 pinhole 현상에 대한 연구)

  • 윤영섭
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.6
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    • pp.151-157
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    • 1996
  • We propose a mechanism for the formation of pinholes in the Si-buffer layer, through the observations with varying the process- and structure variables in the SEPOX (selective poly-oxidation) process, an isolation method for sub-u DRAMs. Pinholes are formed through the accumulation of Si vacancies generated by the oxidation of Si, in which Si atoms leave the sites (vacancies) at the Si/SiO$_{2}$ interfaces and diffuse into the oxide to be oxidized near interface. In the course of the accumulation of Si-vacancies, the stress induced in the Si-buffer layer affects the migration of vacancies to result in the final size and distribution of pinholes. This paper may be, to our knowledge, the first report about the oxidation-induced pinhole in the Si/SiO$_{2}$ system.

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Dyeing Behavior of Silk/CDP Mixed Filament with a Cationic Dye (캐티온염료를 이용한 Silk/Cationic Dyeable Polyester 혼합사의 염색거동)

  • Choe, Jong-Mun;Gwon, Hae-Yong;Park, Yeong-Hwan
    • Journal of Sericultural and Entomological Science
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    • v.37 no.2
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    • pp.154-160
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    • 1995
  • Dyeing behavior of Silk/Cationic dyeable polyester(CDP) mixed filament was investigated by using a cationic dye. The effect of pH, temperature and additives such as carrier, levelling agent and salt were examined for each silk and CDP component of mixed filament in order to find out the optimum dyeing condition. Based on these results, the dyeing behavior was investigated for Silk/CDP mixed filaments concering various dyeing parameters. The dye adsorption was significantly changed on the dyeing temperature, carrier addition and pH of the dyebath. Specially, the dye migration phynomena were observed for a mixed filament, showing that the dyes initially observed on the surface of silk fiber migrate to the CDP component during a dyeing process. The dyeing of Silk/CDP mixed filaments accompanied by dye migration and as a result, dye adsorption can be developed only for a CDP component. Therefore, the control of dyeing temperature is most important for a Silk/CDP mixed filament, in order that both silk and CDP component are able to be dyed by a cationic dye simultaneously in one bath/one dye system.

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