• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.9
• /
• pp.788-793
• /
• 2002

The glass-electroceramics were composed of glass composition(CaO, $SiO_2$, $B_2$ $O_3$) and electroceramic composition(BaO, N $d_2$ $O_3$, B $i_2$ $O_3$ and Ti $O_2$) Their dielectric properties have been investigated as a function of sintering temperature and glass contents. In the ceramics composed of 0.16BaO-0.15(N $d_{0.87}$,B $i_{0.13}$)$_2$ $O_3$-0.69Ti $O_2$with glass ［EG-2782］ 3wt% addition and sintered at 108$0^{\circ}C$ for 2h, we could obtain microwave properties of dielectric constant $\varepsilon$$_{r}$ = 80.1, quality factor Q $\times$f = 810(at 3.5 GHz) and temperature coefficient of resonant frequency $\tau$$_{f}$ = -1.3 ［ppm/$^{\circ}C$］. These experimental results show that dielectric constant and temperature coefficient of resonant frequency could be estimated by empirical equations involving the rule of mixture.e.

• Journal of the Microelectronics and Packaging Society
• /
• v.10 no.1
• /
• pp.65-69
• /
• 2003

Microstructural and electromagnetic properties of YIG ferrites, (Y, Ca)-(Fe, V, In, Al)-O for Isolator/Circulator were investigated with the sintering temperature. YIG ferrites of $Y_{2.1}Ca_{0.9}Fe_{4.4}V_{0.5}In_{0.05}Al_{0.05}O_{12}$ were fabricated by sintering at $1300^{\circ}C$, $1330^{\circ}C$, $1350^{\circ}C$, $1370^{\circ}C$. Crystallographic and microstructural properties were measured using XRD and SEM. Saturation magnetization$(4{\pi}M_s)$ were measured using VSM, and FMR(Ferromagnetic Resonance) experiment was conducted to measure ferromagnetic resonance line width$({\Delta}H)$. Microwave characteristics of YIG ferrites were measured using a Network Analyzer. The YIG ferrite of $Y_{2.1}Ca_{0.9}Fe_{4.4}V_{0.5}In_{0.05}Al_{0.05}O_{12}$, sintered at $1350^{\circ}C$, showed higher density, saturation magnetization and lower ferromagnetic resonance line width than those sintered at any other temperature.

• Journal of the Korean Ceramic Society
• /
• v.36 no.12
• /
• pp.1350-1355
• /
• 1999

Sintering characteristics and dielectric properties of low temperature sinterable Glass/Ceramic dielectric materials were investigated. The dielectric materials which were developed for microwave frequency applications consist of SiO2-TiO2-Bi2O3-RO system(RO:BaO-CaO-SrO) crystallizable glass and Al2O3 as a ceramic filler. Sintering experiments showed that no more densification occurred above 80$0^{\circ}C$ and bulk density and shrinkage depended on Al2O3 content only. Results of dielectric measurements showed that $\varepsilon$r Q$\times$f and $\tau$f of the material containing 30wt% Al2O3 were 17.3, 600 and +23 ppm respectively. Those values for 45 and 60wt% Al2O3 samples were 11.6, 1400, +0.7 ppm and 7.2, 2000, -8.5 ppm, repectively. The results clearly showed that the Glas/Ceramic materials of present experiment decreased in $\varepsilon$r and increased in $\times$f value and changed from positive to negative value in $\tau$f value with the increasement of Al2O3 content.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.284-284
• /
• 2007

In this study, the microwave dielectric property variations of (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites (x=0.3, 0.5 and 0.7) with 10wt% zinc borosilicate(ZBS) glass was investigated as a function of the substitution of $ZnNb_2O_6$ with a view to applying thes system to LTCC technology. The all composition addition of 10wt% ZBS glass ensured a successful sintering below $900^{\circ}C$. In addition, a small amount of $Bi_2SiO_5$ as the secondary phase was observed in the all composition. The substitution of $ZnNb_2O_6$ on the $BiNbO_4$ composites increased the $Q{\times}f$ values, but it decreased the sinterability and dielectric constant due to the high sintering temperature and low dielectric constant of $ZnNb_2O_6\;than\;BiNbO_4$ ceramics. The increasing of $ZnNb_2O_6$ content from 0.3 to 0.7 in the (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites with 10wt% ZBS glass sintered at $900^{\circ}C$ demonstrated 28.1~15.6 in the dielectric constant$({\varepsilon}_r)$, 5,500~8,700GHz in the $Q{\times}f$ value.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.33 no.6
• /
• pp.261-267
• /
• 2023

Crystal structure, microstructure, and dielectric properties of the (Ca, Sr)(Zr, Ti)O₃ (CSZT) system has been studied as a function of sintering temperature and MgO addition for microwave applications. A single-phase CSZT powder with the orthorhombic crystal structure was obtained by the solid-state reaction method. The powder compacts were sintered at 1200℃, 1300℃, and 1400℃ respectively. All the sintered samples had a single-phase orthorhombic crystal structure and grain size increased with sintering temperature. In the case of 1 mol% MgO addition, the orthorhombic crystal structure was the main phase; however, a secondary phase appeared during sintering at 1400℃, as determined by EDS analysis. At 1400℃, the undoped and MgO-doped CSZT had almost similar grain size distribution and densification but the grain size distribution became slightly narrow. The MgO-doped CSZT showed excellent low-loss dielectric properties: ε_r = 34.14, tanδ = 0.00047, τ_ε = -3.58 ppm/℃ at 1 MHz.

• Journal of the Korean Ceramic Society
• /
• v.40 no.1
• /
• pp.81-86
• /
• 2003

Microwave dielectric properties have been investigated in the$(1-x)CaTiO_3-xYAlO_3$ (x=0.1~1.0) solid solution system. The mixtures of $CaTiO_3$ and $YalO_3$using solid state method were sintered at various temperatures. Their dielectric constants and related temperature coefficients were strongly depend on the composition of the solid solution. The optimum properties were recorded as for ${\varepsilon}_r=47,$ $Q{\times}f_0$=35000 and ${\tau}_f=+11ppm/^{\circ}C$ without sintering agent. Even at $1200^{\circ}C$ full densification has been achieved with addition of $CaB_2O_4$ in the $0.75CaTiO_3-0.25YalO_3$ composition. The sample of $0.3 wt%-CaB_2O_4$ added $ 0.75CaTiO_3-0.25YalO_3$ sintered at $1300^{\circ}C$ for 3 h showed optimum microwave dielectric properties of ${\varepsilon}_r=47$, $Q{\time}f_0=37000$ and ${\tau}_f=+17ppm/^{\circ}C$, which demonstrates the promising candidates for microwave dielectric materials covering 5~7 GHz range.

• Korean Journal of Crystallography
• /
• v.11 no.4
• /
• pp.191-194
• /
• 2000

Bi/sub 12/SiO/sub 20/, Bi/sub 12/GeO/sub 20/ and Bi/sub 12/O/sub 20/ compounds with the sillenite crystal structure were synthesized and sintered into the dense ceramic bodies. An analyses of the microwave dielectric properties of the Si, Ge and Ti sillenites showed a permittivity (e) of ∼40 and a negative temperature coefficient of the resonant frequency for all analogues (from -20 to -40 ppm/K). The Qxf value of the Si and Ge sillenites was measured to be ∼8.000 GHz. The Ti analogue shows a significantly lower Qxf value(∼2.500 GHz) and is sensitive to the heat-treatment conditions. By increasing the sintering temperature the size of the grains increases, which correlates with an increase in the Qxf value.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.05b
• /
• pp.257-260
• /
• 2000

소결온도 및 소결시간의 변화가 ZST세라믹의 유전상수 $\varepsilon_{\tau}$, 품질계수 $Q{\cdot}f$ 및 공진주파수의 온도계수 $\tau_f$에 미치는 영향에 대하여 연구하였다. 소결온도를 $1420^{\circ}C$까지 올렸을 때 공진기 섭동방법으로 1.6GHz에서 측정한 품질계수 Q가 가장 높았으나, 소결밀도 및 유전상수는 오히려 감소하였다. 소결시간의 증가에 따른 품질계수 Q는 $1300^{\circ}C{\sim}1380^{\circ}C$ 온도 범위에서는 소폭 상승하였으며, 소결밀도 및 유전상수는 거의 일정하였다. 공진주파수의 온도계수 $\tau_f$는 소결온도 및 소결시간의 변화에는 거의 의존하지 않았다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.11
• /
• pp.925-928
• /
• 2011

Perovskite niobates and tantalates have been placed on a short list of functional materials for future technologies. This article was investigated ferroelectric materials $Ag(Ta,Nb)O_3$ thick film. In this study, we have fabricated the $Ag(Ta,Nb)O_3$ thick film on the $Al_2O_3$ substrates by screen printing method. The $Ag(Ta,Nb)O_3$ thick film were fabricated by the mixed oxide method. The sintering temperature and time were 1,150$^{\circ}C$, 2 hr. The electrical properties of $Ag(Ta,Nb)O_3$ thick film were investigated at 30~100$^{\circ}C$.

• Proceedings of the KIEE Conference
• /
• 1994.07b
• /
• pp.1487-1489
• /
• 1994

$(Zr_{0.65}Sn_{0.35})Ti_{1.04}O_4$ system which has a dielectric constant, low dielectric loss and temperature coefficient was investigated. Temperature coefficient varied from positive to negative with increasing of NiO. For the NiO content 1.0wt%. i.e $(Zr_{0.65}Sn_{0.35})Ti_{1.04}O_4$, the ceramic showed very good dielectric properties such as ${\epsilon}$=37.8, $Q{\times}f_o=49.000$ and ${\tau}_r= 4{\pm}1ppm/^{\circ}C$.